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IXFR140N30P
Power MOSFET, N Channel, 300 V, 82 A, 0.026 ohm, ISOPLUS-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipat
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 360W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: ISOPLUS-247
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 82A
- Drain Source On State Resistance: 0.026ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 11.83 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM] HiPerFET[TM] Power MOSFET** |**Polar[TM]**|**[TM] HiPerFET[TM]**|**IXFR140N30P**|**IXFR140N30P**||**VDSS**|**= 300V**|**= 300V**|**= 300V**|**= 300V**|**= 300V**| |---|---|---|---|---|---|---|---|---|---|---| |**Power MOSFET**|**Power MOSFET**||||**ID25**|**= 70A**|**= 70A**|||| ||||||**RDS(on)**|** 28m**|**28m**|||| |(Electrically Isolated Back Surface)|||||**trr**|** 200ns**|**200ns**|||| |N-Channel Enhancement Mode||||||||||| |Avalanche Rated|Avalanche Rated|||||||||| ||||||**ISOPLUS247**|||||| |**Symbol**|**Test Conditions**||**Maximum Ratings**||**E153432**|||||| |**VDSS**|TJ = 25C to 150C||300|V||||||| |**VDGR**|TJ = 25C to 150C, RGS= 1M||300|V||||||| |**VGSS**|Continuous||20|V||||||| |**VGSM**|Transient||30|V||||||| |**ID25**|TC = 25C||70|A||||Isolated Tab||| |**IDM**|TC = 25C, Pulse Width Limited by T|C, Pulse Width Limited by TJM|300|A||||||| |**IA**|TC = 25C||70|A|G = Gate|D = Drain|D = Drain|||| |**EAS**|TC = 25C||5|J|S = Source|||||| |**dV/dt**|IS<br>IDM, VDD VDSS, TJ 150C||20|V/ns||||||| |**PD**|TC = 25C||300|W||||||| |**TJ**|||-55 ... +150|C||||||| |**TJM**|||150|C||||||| |**Tstg**|||-55 ... +150|C|**Features**|||||| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260|||°C<br>°C|Silicon Chip on Direct-Copper-Bond<br>Substrate||Silicon Chip on Direct-Copper-Bond|Silicon Chip on Direct-Copper-Bond|Silicon Chip on Direct-Copper-Bond|Silicon Chip on Direct-Copper-Bond| |**VISOL**|50/60 Hz, RMS<br>t = 1min<br>IISOL 1mA<br>t = 1s|t = 1min<br>t = 1s|2500<br>3000 V~|V~<br>3000 V~|- High Power Dissipation<br>- Isolated Mounting Surface<br>- 2500V Electrical Isolation|||||| |**Md**|Mounting Force<br>20..120 / 4.5..27 N/lb.|20..120 / 4.5..27 N/lb.|20..120 / 4.5..27 N/lb.|20..120 / 4.5..27 N/lb.|Unclamped Inductive Switching (UIS)|||||Unclamped Inductive Switching (UIS)| |**Weight**||5|5<br>g|g|Rated<br>Low package inductance|Low package inductance|Low package inductance|Low package inductance|Low package inductance|Low package inductance| - Silicon Chip on Direct-Copper-Bond Substrate - Unclamped Inductive Switching (UIS) Rated - Low package inductance - Easy to Drive and to Protect - Fast Intrinsic Diode ## **Advantages** **Symbol Test Conditions Characteristic Values** |(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 3mA<br>300|~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8mA<br>3.0 5.0 V|3.0 5.0 V<br>~~—~~|3.0 5.0 V| |**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~—~~|200 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>1|25<br>1<br>~~_~~|25A<br>1mA| |**RDS(on)**<br>VGS = 10V, ID= 70A, Note 1<br>20 28 m|20 28 m<br>~~_~~<br>~~_~~|20 28 m| - Easy to Mount - Space Savings - High Power Density DS99570G(11/17) © 2017 IXYS CORPORATION, All rights reserved ## **IXFR140N30P** |**Symbol**<br>(TJ= 25C,|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic**<br>**Min. Typ.**|**Characteristic**<br>**Min. Typ.**|**Values**<br>**Max.**| |---|---|---|---|---| |**gfs**|VDS= 20V, ID= 70A, Note 1|50|90|S| |**Ciss**|||14.8|nF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz||1830|pF| |**Crss**|||55|pF| |**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 70A<br>RG= 1(External)|<br> <br> <br>|30<br>30<br>100<br>20|ns<br>ns<br>ns<br>ns| |**Qg(on)**|||185|nC| |**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 70A||72|nC| |**Qgd**|||60|nC| |**RthJC**||||0.42C/W| |**RthCS**|||0.15|C/W| **ISOPLUS247 (IXFR) Outline** **==> picture [157 x 149] intentionally omitted <==** ## **Source-Drain Diode** |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|| |---|---|---|---|---| |(TJ= 25C,|Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|| |**IS**|VGS= 0V||140|A| |**ISM**|Repetitive, pulse width limited by TJM||560|A| |**VSD**|IF= 70A, VGS= 0V, Note 1||1.3|V| |**trr**<br>**QRM**<br>**IRM**|<br> <br> <br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|<br>0.6<br>6.0|200<br>|ns<br>μC<br> A| 1 - Gate 2 ~~- D~~ rain 3 - Source 4 ~~-~~ Isolat ~~ed~~ Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFR140N30P** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>140<br>V GS = 10V<br> 8V<br>120<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20 5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>280<br>VGS = 10V<br> 8V<br>240<br>200<br>160<br>7V<br>120<br>6V<br>80<br>40<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [537 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 70A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>140 3.2<br>V GS = 10V<br> 8V<br>120 7V 2.8 VGS = 10V<br>100 2.4<br>I D = 140A<br>80 6V 2.0<br>I D = 70A<br>60 1.6<br>40 1.2<br>5V<br>20 0.8<br>0 0.4<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 70A Value vs.<br> Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature<br>3.0 80<br> VGS = 10V 70<br>2.6 TJ = 125 [o] C<br>60<br>2.2<br>50<br>1.8 40<br>30<br>1.4<br>20<br>TJ = 25 [o] C<br>1.0<br>10<br>0.6 0<br>0 40 80 120 160 200 240 280 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All rights reserved ## **IXFR140N30P** **==> picture [262 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>180<br>160<br>140<br>120<br>100 TJ = 125 [o] C<br> 25 [o] C<br>80 - 40 [o] C<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [178 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>**----- End of picture text -----**<br> **==> picture [253 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100 TJ = 125 [o] C<br>TJ = 25 [o] C<br>50<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [257 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1 MHz<br>C iss<br>10,000<br>1,000 Coss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [263 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>140<br>TJ = - 40 [o] C<br>120<br>100 25 [o] C<br>80 125 [o] C<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 150V<br> I D = 70A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br>Fig. 12. Forward-Bias Safe Operating Area<br>1,000<br>R DS(on) Limit<br>25μs<br>100<br>100μs<br>1ms<br>10<br>10ms<br>TJ = 150 [o] C<br>DC<br>TC = 25 [o] C<br> Single Pulse<br>1<br>1 10 100 1000<br>VDS - Volts<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFR140N30P** **==> picture [538 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th )JC<br>Z<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All rights reserved IXYS REF: F_140N30P (93)5-13-08-B **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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