IXFR140N20P

Power MOSFET, N Channel, 200 V, 90 A, 0.022 ohm, ISOPLUS-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipat
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 300W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: ISOPLUS-247
Drain Source Voltage Vds: 200V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 90A
Drain Source On State Resistance: 0.022ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	9.35 €
Current stock	10+
Lead time	30 days

Datasheet

## **PolarHT[TM ] HiPerFET IXFR 140N20P Power MOSFET** 

|**VDSS**|**= 200**|**V**|
|---|---|---|
|**ID25**|**=   90**|**A**|
|**RDS(on)**|**≤  22 **|**mΩ**|
|**trr      ≤**|**≤ 200   ns**|**200   ns**|



**ISOPLUS247[TM] (Electrically Isolated Back Surface)** N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated 

|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 175°C||200||V||**ISOPLUS247 (IXFR)**<br>**E153432**<br>~|||||
|**VDGR**|TJ = 25°C to 175°C; RGS= 1 MΩ||200||V|||P||||
|||||||||||||
|**VGS**|Continuous||±20||V|||||||
|**VGSM**|Transient||±30||V|||||||
|**ID25**|TC = 25°C||90||A||G<br>D S|(Isolated Tab)||||
|**ID(RMS)**|External lead current limit||75||A|||||||
|**IDM**|TC = 25°C, pulse width limited by TJM||280||A|||||||
|**IAR**|TC = 25°C||60||A||G = Gate<br>S = Source||D = Drain|D = Drain||
|**EAR**|TC = 25°C||100||mJ|||||||
|**EAS**|TC = 25°C||4||J|||||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, V|s, VDD ≤VDSS,|10||V/ns|||||||
||TJ ≤150°C, RG= 4Ω|||||||||||
|**PD**|TC = 25°C||300||W|||||||
|**TJ**<br>**TJM**|||-55 ... +175<br>175||°C<br>°C|**Features**||||||
|**Tstg**|||-55 ... +150||°C|l|International standard isolated|||International standard isolated|International standard isolated|
|**TL**<br>**VISOL**|1.6 mm (0.062 in.) from case for 10 s<br>50/60 Hz, RMS, 1 minute||300<br>2500||°C<br>V~|package<br>l <br>l|package<br> UL recognized package<br> Unclamped Inductive Switching (UIS)||||Unclamped Inductive Switching (UIS)|
|**Md**|Terminal torque<br>Mounting torque||1.13/10 <br>1.13/10|Nm/lb.in.<br> Nm/lb.in.||l|rated<br> Low package inductance|||||
|**Weight**|||5||g|l|- easy to drive and to protect<br>Fast intrinsic diode||easy to drive and to protect|||
|**Symbol**|**Test Conditions**||**Characteristic Values**|||||||||
|(TJ= 25°C, unless otherwise specified)<br>**BVDSS**<br>VGS = 0 V, ID= 250µA|||**Min.    Typ.**<br>200<br>|||**Max.**<br>V||**Advantages**||||||
|**VGS(th)**<br>**IGSS**<br>**IDSS**|VDS = VGS, ID= 4 mA<br>VGS =±20 VDC, VDS= 0<br>VDS =  VDSS<br>VGS= 0 V|TJ= 150°C|2.5<br>5.0<br>±200<br>25<br>250<br>~~_~~<br>~~_-~~||V<br>nA<br>µA<br>µA|l<br>l<br>l|Easy to mount<br>Space savings<br>High power density|||||
|**RDS(on)**|VGS = 10 V, ID= 0.5 ID25<br>VGS = 15 V, ID= 140A<br>Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %|17<br>_|22|mΩ<br>mΩ|||||||



> l International standard isolated package 

> l Unclamped Inductive Switching (UIS) rated 

DS99298E(12/05) 

© 2006 IXYS All rights reserved 

**IXFR 140N20P** 

|**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|
||(TJ= 25°C, unless otherwise specified)|||||
|||**Min.**|**Typ.**|**Max.**||
|**gfs**|VDS= 10 V; ID= 0.5 ID25, pulse test|50|84||S|
|**Ciss**|||7500||pF|
|**Coss**|VGS= 0 V, VDS= 25 V, f = 1 MHz||1800||pF|
|**Crss**|||280||pF|
|**td(on)**|||30||ns|
|**tr**|VGS= 10 V, VDS= 0.5 VDSS, ID= 60 A||35||ns|
|**td(off)**|RG= 3.3Ω(External)||150||ns|
|**tf**|||90||ns|
|**Qg(on)**|||240||nC|
|**Qgs**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||50||nC|
|**Qgd**|||100||nC|
|**RthJC**||||0.5|°C/W|
|**RthCS**|ISOPLUS247||0.15||°C/W|



|**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|---|
|||(TJ= 25°C, unless otherwise specified)||||
|**Symbol**|**Test Conditions**|**Min.**|**typ.**|**Max.**||
|**IS**|VGS= 0 V|||90|A|
|**ISM**|Repetitive|||280|A|
|**VSD**|IF= IS, VGS= 0 V,|||1.5|V|
||Pulse test, t≤300µs, duty|cycle d≤2 %||||
|**trr**|IF= 25 A,  -di/dt = 100 A/µs|||200|ns|
|**QRM**|VR= 100 V,  VGS= 0 V||0.6||µC|
|**IRM**|||6||Α|



## **ISOPLUS 247 OUTLINE** 

**==> picture [133 x 141] intentionally omitted <==**

1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection 

|m.<br>Millimeter<br>Min.<br>Max|Inches<br>.<br>Min.<br>Max.|
|---|---|
|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190 .205<br><br>.090 .100<br><br>.075 .085|
|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045 .055<br><br>.075 .084<br><br>.115 .123|
|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024 .031<br><br>.819 .840<br><br>.620 .635|
|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br><br>.780 .800<br><br>.150 .170|
|5.59<br>6.20<br>4.32<br>4.83|.220 .244<br><br>.170 .190|



IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6771478 B2 

**IXFR 140N20P** 

**Fig. 1. Output Characteristics @ 25ºC** 

**==> picture [231 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
140<br>VGS = 10V<br>120           9V<br>          8V<br>100<br>80<br>7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 150ºC** 

**==> picture [228 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
140<br>VGS = 10V<br>120           9V<br>          8V<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20 5V<br>0<br>0 1 2 3 4 5 6<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Norm alized to ID = 70A Value vs. Drain Current** 

**==> picture [232 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
4<br>T J  = 175ºC<br>3.5<br>3<br>2.5<br>VGS = 10V<br>VGS = 15V<br>2<br>1.5<br>1 TJ = 25ºC<br>0.5<br>0 50 100 150 200 250 300<br>I D - Amperes<br>  - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [232 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>270 VGS = 10V 9V<br>240<br>210<br>8V<br>180<br>150<br>120<br>7V<br>90<br>60<br>6V<br>30<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>V D S - Volts<br>Fig. 4. RDS(on) Norm alized to ID = 70A<br>Value vs. Junction Tem perature<br>3 V GS  = 10V<br>2.5<br>I D = 140A<br>2<br>I D  = 70A<br>1.5<br>1<br>0.5<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Curre nt vs . Cas e<br>Te m pe rature<br>90<br>External Lead C urrent Lim it<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>  - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXFR 140N20P** 

**Fig. 7. Input Adm ittance** 

**==> picture [228 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
225<br>200<br>175<br>150<br>125<br>100<br>75  TJ = 150ºC<br>50          25ºC<br>        -40ºC<br>25<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5 8<br>V G S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [226 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
350<br>300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4<br>V S D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [237 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>f = 1MHz<br>Ciss<br>10,000<br>C oss<br>1,000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>V DS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

**==> picture [231 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>110<br>100<br>90<br>80<br>70<br>60 T J  = -40ºC<br>50        25ºC<br>40      150ºC<br>30<br>20<br>10<br>0<br>0 40 80 120 160 200 240<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 100V<br>8 I D = 70A<br>I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150 175 200 225 250<br>Q G - nanoCoulombs<br>  - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forw ard-Bias Safe  Ope rating Are a** 

**==> picture [230 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>R  Lim it 25µs<br>DS(on)<br>100 100µs<br>1m s<br>10m s<br>10<br>T J  = 175ºC D C<br>TC = 25 º C<br>1<br>1 10 100 1000<br>V D S - V olts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXFR 140N20P** 

## **Fig. 13. Maxim um  Transient Therm al Resistance** 

**==> picture [492 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>ºC / W<br>  -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 27, 2026

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