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IXFP8N85X
Power MOSFET, N Channel, 850 V, 8 A, 0.85 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: X-Class HiPerFET
- Qualification: -
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 850V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 8A
- Drain Source On State Resistance: 0.85ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.3 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## PreliminaryTechnical Information ## **X-Class HiPERFET Power MOSFET** **IXFA8N85XHV IXFP8N85X IXFQ8N85X** N-Channel Enhancement Mode |**Symbol**|**Test Conditions**|**Maximum Ratings**|| |---|---|---|---| |**VDSS**|TJ = 25C to 150C|850|V| |**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>850<br>V<br>~~——~~|||| |**VGSS**|Continuous|30|V| |**VGSM**<br>**ID25**<br>**IDM**|Transient<br>TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|40<br>8<br>16|V<br>A<br>A| |**IA**<br>**EAS**<br>**dv/dt**I<br>~~oo~~|TC = 25C<br>TC = 25C<br>IS IDM, VDD VDSS, TJ 150°C 50 V/ns|4<br>300<br>150°C 50 V/ns|A<br>mJ<br>150°C 50 V/ns| |**PD**|TC = 25C|200|W| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**FC**|Mounting Force (TO-263HV) 10..65 / 2.2..14.6 N/lb||Mounting Force (TO-263HV) 10..65 / 2.2..14.6 N/lb| |**Md**<br>**Weight**<br>TO-220<br>TO-3P|Mounting Torque (TO-220 & TO-3P)<br>TO-263HV<br>2.5<br>TO-220<br>3.0<br>TO-3P<br>5.5|1.13 / 10 Nm/lb.in<br>2.5<br>g<br>3.0<br>g<br>5.5<br>g|| **V = 850V DSS I = 8A D25 R 850m DS(on)** **==> picture [135 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263HV (IXFA)<br>G<br>S<br>:<br> D (Tab)<br>TO-220 (IXFP)<br>G<br>D<br>S<br>D (Tab)<br>TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** - International Standard Packages - High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>850|~~a~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>3.0 5.5 V|5.5 V<br>~~|~~|5.5 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~|~~<br>~~_~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>750|10<br>750<br>~~__~~|10A<br>750A| |**RDS(on)**<br>VGS = 10V, ID= 4A, Note 1|850 m|850 m| - High Power Density - Easy to Mount Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100804B(06/18) © 2018 IXYS CORPORATION, All Rights Reserved **IXFA8N85XHV IXFP8N85X IXFQ8N85X** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max**| |**gfs**<br>VDS= 10V, ID= 4A, Note 1 2.7||4.5|S| |**RGi**<br>Gate Input Resistance<br>||3|| ||||| |**Ciss**<br>**Coss**<br>**Crss**|<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>|654<br>714<br>11|pF<br>pF<br>pF| |**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS||40<br>120|pF<br>pF| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 4A<br> <br>**Qgd**<br>||17.0<br>3.6<br>10.0|nC<br>nC<br>nC| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 4A<br>RG= 10(External)||15<br>25<br>32<br>23|ns<br>ns<br>ns<br>ns| |**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-3P||<br>0.50<br>0.21|0.63C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||8 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM||32 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 4A, -di/dt = 100A/μs<br>VR= 100V|125<br>1.1<br>18.0|ns<br>μC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXFA8N85XHV IXFP8N85X IXFQ8N85X** **==> picture [264 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>8<br>VGS = 10V<br>7<br>9V<br>6<br>5<br>8V<br>4<br>3<br>7V<br>2<br>1<br>6V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [263 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>18<br>VGS = 10V<br>16<br>14<br>12 9V<br>10<br>8 8V<br>6<br>4<br>7V<br>2<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [538 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 4A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>8 4.0<br>VGS = 10V<br>7 9V 3.5 VGS = 10V<br>6 8V 3.0<br>5 2.5<br>I D = 8A<br>4 7V 2.0<br>I D = 4A<br>3 1.5<br>2 6V 1.0<br>1 0.5<br>5V<br>0 0.0<br>0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.0 1.3<br>VGS = 10V<br>3.5 1.2<br>3.0 TJ = 125 [o] C 1.1 BVDSS<br>2.5 1.0<br>2.0 0.9<br>1.5 0.8<br>V GS(th)<br>TJ = 25 [o] C<br>1.0 0.7<br>0.5 0.6<br>0 2 4 6 8 10 12 14 16 18 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on) / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXFA8N85XHV IXFP8N85X IXFQ8N85X** **==> picture [265 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Input Admittance<br>5.0<br>4.5<br>4.0<br>3.5<br>3.0 TJ = 125 [o] C<br> 25 [o] C<br>2.5 - 40 [o] C<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [536 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>7 50<br>T J = - 40 [o] C<br>6<br>40<br>25 [o] C<br>5<br>125 [o] C<br>30<br>4<br>3<br>20<br>TJ = 25 [o] C<br>2<br>10 TJ = 125 [o] C<br>1<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 10000<br>9 VDS = 425V<br> I D = 4A<br>8 1000<br> I G = 10mA<br>7 C iss<br>6 100<br>5<br>4 10 Coss<br>3<br>2 1<br>1 f = 1 MHz Crss<br>0 0.1<br>0 2 4 6 8 10 12 14 16 18 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFA8N85XHV IXFP8N85X IXFQ8N85X** **==> picture [538 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>14 100<br>12 RDS(on) Limit<br>10<br>10<br>10 0μs<br>8<br>1<br>6<br>4<br>0.1<br> TJ = 150 [o] C 1m s<br>2 T C = 25 [o] C<br>10 ms<br> Single Pulse DC<br>0 0.01<br>0 100 200 300 400 500 600 700 800 900 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br> ## **Fig. 15. Maximum Transient Thermal Impedance** **==> picture [516 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_8N85X(U3-D901) 2-17-17 **IXFA8N85XHV IXFP8N85X IXFQ8N85X** ## **TO-263HV Outline** **==> picture [35 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> 1 = Gate<br>2 = Source<br>3 = Drain<br>**----- End of picture text -----**<br> **==> picture [130 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>tte PSL<br>TA<br>mee: E<br>qe<br>|<br>Oo fo<br>on<br>ak<br>- |<br>|<br>|<br>nae oy<br>me<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [128 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> TO-3P Outline<br>E ,<br>AAI<br>oOo<br>| 0<br>TF<br>L<br>dat.<br>1 - Gate<br>at 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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