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IXFP5N100P
Power MOSFET, N Channel, 1 kV, 5 A, 2.8 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET
- Qualification: -
- Power Dissipation: 250W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5A
- Drain Source On State Resistance: 2.8ohm
- Gate Source Threshold Voltage Max: 6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.11 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## Preliminary Technical Information (Co ## **Polar[TM ] HiPerFET[TM] Power MOSFET** **IXFA5N100P IXFP5N100P IXFH5N100P** **V = 1000V DSS I = 5A D25 R 2.8 DS(on)** |N-Channel Enhancement Mode|N-Channel Enhancement Mode||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Avalanche Rated|||||||||||||| |Fast Intrinsic Rectifier||||**TO-263**|||||||||| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**(IXFA)**<br>G<br>S<br>~~ft~~|||||||||||||| |**VDSS**|TJ = 25C to 150C|1000|V||||||||D (Tab)||| |**VDGR**|TJ = 25C to 150C, RGS= 1M|1000|V|**TO-220**|||||||||| |**VGSS**|Continuous|30|V|**(IXFP)**|||||||||| |**VGSM**<br>Transient<br>40<br>V<br>~~ee~~|||||||||||||| |**ID25**<br>**IDM**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|5<br>10|A<br>A|||S<br>G<br>D|||||D (Tab)||| |**IA**|TC = 25C|5|A|**TO-247**|||||||||| |**EAS**|TC = 25C|300|mJ|**(IXFH)**|||||||||| |**dV/dt**|IS<br>IDM, VDD VDSS, TJ 150C|10|V/ns||||||||||| |**PD**<br>**TJ**|TC = 25C|250<br>-55 ... +150|W<br>C|G||D|S||||D(Tab)||| |**TJM**||150|C|G = Gate||||D = Drain||D = Drain|D = Drain||| |**Tstg**||-55 ... +150|C|S = Source||||Tab = Drain|||Tab = Drain||| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C||||||||||| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C||||||||||| |**FC**|**C**Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb||Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb|**Features**|||||||||| |**Md**Mounting Torque (TO-220 & TO-247)<br>**Weight**TO-263<br>TO-220|Mounting Torque (TO-220 & TO-247)<br>TO-263<br>2.5<br>TO-220<br>3.0|1.13 / 10 Nm/lb.in<br>2.5<br>g<br>3.0<br>g||International Standard Packages<br>Low QG<br>Avalanche Rated|||||||||International Standard Packages| |TO-247|TO-247<br>6.0 g|6.0 g|6.0 g|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance|Low Package Inductance| - International Standard Packages - Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>1000|~~—~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>3.0<br>6.0 V|6.0 V<br>~~|~~|6.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~|~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>750|10<br>750<br>~~_~~|10A<br>750A| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|2.8<br>~~|~~|2.8| - High Power Density - Easy to Mount Space Savings ## **Applications** - DC-DC Converters - Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications DS99923A(11/18) © 2018 IXYS CORPORATION, All rights reserved ## **IXFA5N100P IXFP5N100P IXFH5N100P** |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min.**||**Typ.**|**Max.**| |**gfs**<br>VDS= 20V, ID= 0.5**•**ID25, Note 1 2.4||4.0|S| |**RGi**<br>Gate input resistance<br>||1.6|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>||1830<br>113<br>20|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)||12<br>13<br>30<br>37|ns<br>ns<br>ns<br>ns| ||||| |**Qg(on)**<br>**Qgs**<br>**Qgd**|<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>|33.4<br>10.6<br>14.4|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>(TO-220)<br> <br>**RthCS**<br>(TO-247)<br>||<br>0.50<br>0.21|0.50C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min.**||**Typ.**|**Max.**| |**IS**<br>VGS= 0V|||5 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|||20 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|||1.3 V| |**trr**<br>**IRM**<br>**Q**|<br> <br> <br>IF= 5A, VGS= 0V<br>-di/dt = 100A/s<br>VR= 100V|<br>7.4<br>0.43|200 ns<br>A<br>μC| |**RM**|||| Note 1: Pulse test, t 300s; duty cycle, d 2%. ## **PRELIMINARY TECHNICAL INFORMATION** The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXFA5N100P IXFP5N100P IXFH5N100P** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>5.0<br>VGS = 10V<br>4.5<br> 8V<br>4.0<br>7V<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0 6V<br>0.5<br>5V<br>0.0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125[o] C** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>8<br>V GS = 10V<br>7 9V<br>6<br>8V<br>5<br>7V<br>4<br>3<br>2<br>6V<br>1<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature** **==> picture [534 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 2.8<br>4.5 VGS 8V= 10V VGS = 10V<br>2.4<br>4.0<br>7V<br>I D = 5A<br>3.5<br>2.0<br>3.0<br>2.5 1.6 I D = 2.5A<br>2.0 6V<br>1.2<br>1.5<br>1.0<br>0.8<br>0.5 5V<br>0.0 0.4<br>0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs.<br> Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature<br>2.6 6<br>2.4 V GS = 10V<br>T J = 125 [o] C 5<br>2.2<br>2.0 4<br>1.8<br>3<br>1.6<br>1.4 T J = 25 [o] C 2<br>1.2<br>1<br>1.0<br>0.8 0<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All rights reserved ## **IXFA5N100P IXFP5N100P IXFH5N100P** **==> picture [531 x 635] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>4.50 6<br>TJ = - 40 [o] C<br>4.00<br>TJ = 125 [o] C 5<br>3.50 25 [o] C<br> 25 [o] C<br> - 40 [o] C<br>3.00 4<br>125 [o] C<br>2.50<br>3<br>2.00<br>1.50 2<br>1.00<br>1<br>0.50<br>0.00 0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>16 10<br>9 VDS = 500V<br>14<br> I D = 2.5A<br>8<br>12 I G = 10mA<br>7<br>10<br>6<br>8 5<br>4<br>6<br>TJ = 125 [o] C 3<br>4<br>2<br>T J = 25 [o] C<br>2<br>1<br>0 0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 4 8 12 16 20 24 28 32<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance<br>10,000 1<br>f = 1 MHz<br>C iss<br>1,000<br>0.1<br>Coss<br>100<br>Crss<br>10 0.01<br>0 5 10 15 20 25 30 35 40 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - Amperes GS<br>IS V<br> - K / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [251 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_5N100P(55-744)5-7-13-A ## **IXFA5N100P IXFP5N100P IXFH5N100P** **==> picture [65 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>fi,<br>ri<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [155 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>poe<br>= 7<br>T<br>(2s<br>‘ al<br>r<br>a] ck ox<br>a<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>ste<br>TO-247 Outline<br>ote iCptES<br>ii at bt<br>‘ll it 02<br>I<br>| Oley<br>ul Pes tes omnen—t<br>| 4<br>Hs iL<br>>—<br>1 - Gate<br>2,4 - Drain<br>oe ¥ " 3 - Source<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All rights reserved
Updated at April 29, 2026
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