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IXFP4N100Q
Power MOSFET, N Channel, 1 kV, 4 A, 3 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 156W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 156W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 3ohm
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4A
- Drain Source On State Resistance: 3ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 2.04 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiperFET[TM] Power MOSFETs Q-Class** ## **IXFA4N100Q IXFP4N100Q** **V = 1000V DSS I = 4A D25 R ≤ 3.0 Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **TO-263 AA (IXFA)** |Fast Intrinsic Diode<br>**Symbol**|Fast Intrinsic Diode<br>**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|||G<br>S<br>B~~S~~|G<br>S<br>B~~S~~|G<br>S<br>B~~S~~|G<br>S<br>B~~S~~| |---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|1000||V|||D (Tab)|| |**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|1000||V|**TO-220AB (IXFP)**|||| |**VGSS**<br>Continuous<br>±20<br>V<br>**VGSM**<br>Transient<br>±30<br>V<br>**ID25**<br>TC = 25°C<br>4<br>A<br>**IDM**<br>TC = 25°C, Pulse Width Limited by TJM<br>16<br>A<br>**IA**<br>TC = 25°C<br>4<br>A<br>**EAS**<br>TC = 25°C<br>700<br>mJ<br>G<br>D S<br>D (Tab)<br>~~OSH~~||||||||| |**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|5||V/ns|G = Gate<br>D = Drain||D = Drain|| |**PD**T|TC = 25°C|150||W|S = Source<br>Tab = Drain||Tab = Drain|| |**TJ**||-55 ... +150||°C||||| |**TJM**||150||°C||||| |**Tstg**||-55 ... +150||°C|**Features**|||| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>Plastic Body for 10s|300<br>260||°C<br>°C|International Standard Packages|||| |**MC**<br>**Md**|Mounting Force (TO-263) 10..65/2.2..14.6<br>Mounting Torque (TO-220)<br>1.13/10|10..65/2.2..14.6<br>1.13/10|Nm/lb.in.<br>Nm/lb.in.||Avalanche Rated<br>Fast Intrinsic Diode<br>Low QG|||| |**Weight**|TO-263<br>TO-220|2.5<br>3.0||g<br>g|Low RDS(on)<br>Low Drain-to-Tab Capacitance|Low Drain-to-Tab Capacitance|Low Drain-to-Tab Capacitance|Low Drain-to-Tab Capacitance| International Standard Packages Avalanche Rated Fast Intrinsic Diode Low QG Low R DS(on) Low Drain-to-Tab Capacitance Low Package Inductance |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>1000||V| |**VGS(th)**<br>VDS = VGS, ID= 1.5mA<br>2.5|4.5<br>~~—~~|4.5<br>V| |**IGSS**<br>VGS =±20V, VDS= 0V|±<br>~~—~~|±100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>1 mA|50<br>1 mA|50<br>μA<br>1 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>3.0|3.0|3.0<br>Ω| ## **Advantages** High Power Density Easy to Mount Space Savings ## **Applications** DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS98705B(04/11) © 2011 IXYS CORPORATION, All Rights Reserved **IXFA4N100Q IXFP4N100Q** |(TC Unless Otherwise Specified)||| |---|---|---| |(TJ= 25°C Unless Otherwise Specified)**Min. Typ.**|**Min. Typ. Max.**|**Max.**| |**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1 1.5 2.5|, Note 1 1.5 2.5|S| |**Ciss**<br>1050<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>120<br>**Crss**<br>30|1050<br>120<br>30|pF<br>pF<br>pF| |**td(on)**<br>17<br>**tr**<br> 15 ns<br>**td(off)**<br>32 ns<br>**tf**<br>18 ns<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 4.7Ω(External)|17<br>15 ns<br>32 ns<br>18 ns|ns<br>15 ns<br>32 ns<br>18 ns| |**Qg(on)**<br>39<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>9<br>**Qgd**<br>23|39<br>9<br>23|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>TO-220<br>0.50|0.80<br>0.50|0.80°C/W<br>°C/W| **TO-263 Outline** ## **Source-Drain Diode** |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|| |---|---|---|---|---| |(TJ= 25°C Unless Otherwise Specified)<br>**IS**|C Unless Otherwise Specified)**Min. Typ.**<br>VGS= 0V|**Min. Typ. Max.**<br>4|**Max.**<br>4|A| |**ISM**<br>**VSD**|Repetitive, Pulse Width Limited by TJM<br>IF= IS, VGS= 0V, Note 1|16<br>1.5|16<br>1.5|A<br>V| |**trr**<br>**QRM**<br>**IRM**|250 ns<br>0.52<br>**RM**1.80<br>IF= IS, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V|250 ns<br>0.52<br>1.80|250 ns<br>|250 ns<br>μC<br>A| **TO-220 Outline** Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. **==> picture [99 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFA4N100Q IXFP4N100Q** Figure 1. Output Characteristics at 25[O] C **==> picture [213 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>TJ = 25°C VGS = 10V<br>9V<br>8V<br>3<br>7V<br>2<br>6V<br>1<br>5V<br>0<br>0 2 4 6 8 10<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Figure 3. Output characteristics at 125°C **==> picture [214 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>TJ = 125°C VGS = 10V<br>9V<br>3 8V 7V<br>2<br>6V<br>1<br>5V<br>0<br>0 5 10 15 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [226 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID<br>2.4<br>VGS = 10V<br>2.2<br>2.0<br>TJ = 125°C<br>1.8<br>1.6<br>1.4<br>TJ = 25°C<br>1.2<br>1.0<br>0.8<br>0 1 2 3 4 5 6<br>ID - Amperes<br> - Normalized<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> Figure 2. Extended Output Characteristics at 125[O] C **==> picture [214 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>TJ = 25°C VGS = 10V<br> 9V<br>5<br> 8V<br>7V<br>4<br>3<br>6V<br>2<br>1<br>5V<br>0<br>0 4 8 12 16 20<br>VCE - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Figure 4. Admittance Curves **==> picture [212 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>3<br>TJ = 125 [O] C<br>2<br>TJ = 25 [O] C<br>1<br>0<br>3 4 5 6 7 8<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ **==> picture [225 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>2.2 V GS = 10V<br>ID = 2A<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>25 50 75 100 125 150<br>TJ - Degrees C<br> - Normalized<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> © 2011 IXYS CORPORATION, All Rights Reserved **IXFA4N100Q IXFP4N100Q** Figure 7. Gate Charge Figure 8. Capacitance Curves **==> picture [501 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 15 2000<br>Ciss<br>1000<br>12 V DS = 600 V<br> ID = 3 A f = 1MHz<br> IG = 10 mA Coss<br>9<br>Crss<br>100<br>6<br>3<br>0 10<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30 35<br>Gate Charge - nC VDS - Volts<br> - Volts<br>GS<br>V<br>Capacitance - pF<br>**----- End of picture text -----**<br> Figure 9. Forward Voltage Drop of the Intrinsic Diode **==> picture [218 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>60<br>3<br>2<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees CentigradeC - Degrees Centigrade - Degrees Centigrade<br> - AmperesIDD<br>IDD<br>**----- End of picture text -----**<br> **==> picture [511 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 10 5<br>8 4<br>60<br>6 3<br>TJ = 125 [O] C<br>4 2<br>TJ = 25 [O] C<br>2<br>1<br>0<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2<br>-50 -25 0 25 50 75 100 125 150<br>VSD - Volts<br>TC - Degrees CentigradeC - Degrees Centigrade - Degrees Centigrade<br>Figure 11. Transient Thermal Resistance<br>1.00<br>0.10<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>Pulse Width - Seconds<br> - AmperesID - AmperesIDD<br> - K/W<br>JC<br>R(th)<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_4N100Q (4U)04-01-11-A
Updated at February 9, 2023
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