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IXFP16N50P3
Power MOSFET, N Channel, 500 V, 16 A, 0.36 ohm, TO-220AB, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar3 HiPerFET
- Qualification: -
- Power Dissipation: 330W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 16A
- Drain Source On State Resistance: 0.36ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 2.3 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar3[[ TM ]] HiPerFET[[TM]] Power MOSFET** **Polar3[[ TM ]] HiPerFET[[TM]] IXFA16N50P3 VDSS = 500V Power MOSFET IXFP16N50P3 ID25 = 16A R 360m IXFH16N50P3 DS(on)** N-Channel Enhancement Mode Avalanche Rated **TO-263 (IXFA)** Fast Intrinsic Rectifier G S D (Tab) **==> picture [111 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 (IXFP)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> ||||~~a~~| |---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |**VDSS**|TJ = 25C to 150C|500|V| |**VDGR**<br>~~a~~|TJ = 25C to 150C, RGS= 1M<br>~~a~~|500<br>~~a~~|V<br>~~a~~| |**VGSS**|Continuous|30|V| |**VGSM**|Transient|40|V| |**ID25**|TC = 25C|16|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|40|A| |**IA**|TC = 25C|8|A| |**EAS**|TC = 25C|300|mJ| |**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C|35|V/ns| |**PD**|TC = 25C|330|W| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|Plastic Body for 10s<br>260 °C|260 °C|260 °C| |**FC**|Mounting Force (TO-263) 10..65 / 2.2..14.6||N/lb| |**Md**<br>**Weight**<br>TO-247|Mounting Torque (TO-220 & TO-247)<br>TO-263<br>TO-220<br>TO-247|1.13 / 10<br>2.5<br>3.0 g<br>6.0 g|Nm/lb.in<br>g<br>3.0 g<br>6.0 g| G = Gate D = Drain S = Source Tab = Drain ## **Features** - International Standard Packages - Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>500||V| |**VGS(th)**<br>VDS = VGS, ID= 2.5mA<br>3.0 5.0 V|5.0 V<br>~~_—~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~_—~~<br>~~—_~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>250|15<br>250<br>~~—_7~~|15A<br>250A| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|360 m<br>~~|~~|360 m| - High Power Density - Easy to Mount Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100456B(6/18) © 2018 IXYS CORPORATION, All Rights Reserved **IXFA16N50P3 IXFP16N50P3 IXFH16N50P3** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1 9|15|S| |**RGi**<br>Gate Input Resistance<br>|2.8|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|1515<br>193<br>7|pF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|19<br>6<br>44<br>9|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|29<br>7<br>10|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>TO-247<br>|<br>0.50<br>0.21|0.38C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**|**Test Conditions**|||**Characteristic**|**Characteristic**|**Values**|| |---|---|---|---|---|---|---|---| |(TJ= 25C,|Unless Otherwise Specified)|||**Min.**|**Typ.**|**Max**|| |**IS**|VGS= 0V, Note1|||||16|A| |**ISM**|Repetitive, Pulse Width Limited by TJM|||||64|A| |**VSD**|IF= IS, VGS= 0V, Note 1|||||1.4|V| |**trr**|IF= 8A, -di/dt = 100A/μs|||||250|ns| |**QRM**<br>**IRM**|VR= 100V|<br>|<br>|<br>|0.8<br>8.7|C<br>A|| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXFA16N50P3 IXFP16N50P3 IXFH16N50P3** **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>16<br>VGS = 10V<br>14 8V<br> 7V<br>12<br>10 6V<br>8<br>6<br>4<br>2 5V<br>0<br>0 1 2 3 4 5 6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125[o] C** **==> picture [253 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>VGS = 10V<br>14 7V<br>12<br>6V<br>10<br>8<br>6<br>5V<br>4<br>2<br>4V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current** **==> picture [253 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 3.8<br>3.4 VGS = 10V TJ = 125 [o] C<br>3.0<br>2.6<br>2.2 TJ = 25 [o] C<br>1.8<br>1.4<br>1.0<br>0.6<br>0 4 8 12 16 20 24 28 32 36 40<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>40<br>VGS = 10V<br>36<br> 8V<br>32<br>28<br>7V<br>24<br>20<br>16 6V<br>12<br>8<br>4<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature** **==> picture [256 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br>V GS = 10V<br>3.0<br>2.6<br>I D = 16A<br>2.2<br>1.8 I D = 8A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [265 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6. Maximum Drain Current vs. Case Temperature<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXFA16N50P3 IXFP16N50P3 IXFH16N50P3** **==> picture [260 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>20<br>18<br>VDS = 20V<br>16<br>14<br>12<br>10<br>8 TJ = 125 [o] C<br>25 [o] C<br>6 - 40 [o] C<br>4<br>2<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15 TJ = 125 [o] C<br>10 T J = 25 [o] C<br>5<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [258 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>f = 1 MHz<br>C iss<br>1,000<br>100 Coss<br>10<br>Crss<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **==> picture [260 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>30<br>V DS = 20V TJ = - 40 [o] C<br>25<br>20 25 [o] C<br>125 [o] C<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 250V<br> I D = 8A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [256 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>RDS(on) Limit<br>25μs<br>10 100μs<br>1<br>TJ = 150 [o] C<br>T C = 25 [o] C 1ms<br>Single Pulse<br>0.1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFA16N50P3 IXFP16N50P3 IXFH16N50P3** **==> picture [538 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_16N50P3(K4-N38)3-23-12 ## **IXFA16N50P3 IXFP16N50P3 IXFH16N50P3** **==> picture [65 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [155 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>Tt ak<br>a r<br>T<br>(23<br>‘ al<br>r<br>|<br>ad cee<br>owe<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>Lmped<br>TO-247 Outline<br>Lc [aSat.]<br>|- Wot<br>D2 sas comm—t<br>u | 4<br>Hs ,<br>5 all<br>1 - Gate<br>2,4 - Drain<br>7 ¥ ad 3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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