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IXFP14N60P
MOSFET, N, TO-220
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(on):550mohm; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:300W; Transistor Case
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.84 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM ] HiperFET Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ## **IXFA14N60P IXFP14N60P IXFH14N60P** **V = 600V DSS I = 14A D25 R ≤ 550m Ω DS(on) t ≤ 200ns rr** **TO-263** **==> picture [23 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>**----- End of picture text -----**<br> (TAB) |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>600<br>V<br>**VDGR**<br>TJ = 25°C to 150°C RGS= 1MΩ<br>600<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~—$____—~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>600<br>V<br>**VDGR**<br>TJ = 25°C to 150°C RGS= 1MΩ<br>600<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~—$____—~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>600<br>V<br>**VDGR**<br>TJ = 25°C to 150°C RGS= 1MΩ<br>600<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~—$____—~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>600<br>V<br>**VDGR**<br>TJ = 25°C to 150°C RGS= 1MΩ<br>600<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~—$____—~~|**TO-220**<br>G|**TO-220**<br>G|**TO-220**<br>G||(TAB)<br>D<br>S<br>~~w~~w|(TAB)<br>D<br>S<br>~~w~~w|(TAB)<br>D<br>S<br>~~w~~w|(TAB)<br>D<br>S<br>~~w~~w|(TAB)<br>D<br>S<br>~~w~~w|(TAB)<br>D<br>S<br>~~w~~w|(TAB)<br>D<br>S<br>~~w~~w| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**ID25**|TC = 25°C|14|A|||||||||||| |**IDM**<br>TC = 25°C, pulse width limited by TJM<br>42<br>A<br>**IA**<br>TC = 25°C<br>14<br>A<br>**EAS**<br>TC = 25°C<br>900<br>mJ<br>**dV/dt**<br>IS ≤IDM, VDD ≤VDSS, TJ ≤150°C<br>10 V/ns<br>**PD**<br>TC = 25°C<br>300<br>W<br>~~a~~||||**TO-247**<br>G D S|||||||||(TAB)|| |**TJ**||-55 ... +150|°C|||||||||||| |**TJM**||150|°C|G = Gate||||||||D = Drain|D = Drain|| |**Tstg**||-55 ... +150|°C|S = Source||||||||TAB = Drain|TAB = Drain|| |**TL**|1.6mm (0.062 in.) from case for 10s|300|°C|||||||||||| |**TSOLD**|Plastic body for 10 seconds|260|°C|**Features**||||||||||| |**Md**|Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nmlb.in.|Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nmlb.in.||||||||||||| |**FC**|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.|Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.|International standard packages||||||||||International standard packages| |**Weight**|TO-263|2.5|g|Avalanche rated|||||Avalanche rated|||||| ||TO-220<br>TO-247|3.0<br>6.0|g<br>g|**Advantages**||||||||||| International standard packages Avalanche rated Easy to mount Space savings High power density |**Symbol**<br>(T= 25°C unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25°C unless otherwise specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>600|—s|V<br>| |**VGS(th)**<br>VDS = VGS, ID= 2.5mA<br>3.0<br>5.5|5.5<br>~~-~~|5.5<br>V<br>~~-~~| |**IGSS**<br>VGS =±30V, VDS= 0V<br>±|±<br>~~-~~|±100<br>nA<br>~~-~~| |**IDSS**<br>VDS = VDSS<br>5<br>VGS = 0V<br>TJ= 125°C<br>500|5<br>500<br>~~-~~<br>~~7~~|5<br>μA<br>500μA<br>~~-~~<br>~~7~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>450 550|450 550<br>~~|~~|450 550 mΩ<br>~~|~~| Switched-mode and resonant-mode power supplies . DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls © 2008 IXYS CORPORATION, All rights reserved DS99389F(12/08) ## **IXFA14N60P IXFP14N60P IXFH14N60P** **==> picture [353 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Symbol|Test Conditions Characteristic Values| |(TJ = 25°C unless otherwise specified)|Min. Typ. Max.| |gfs|VDS= 20V, ID = 0.5 • ID25, Note 1 7 13|S| |Ciss|2500|pF| |Coss|VGS = 0V, VDS = 25V, f = 1MHz|215|pF| |Crss|13|pF| |t|23|ns| |d(on)|Resistive Switching Times| |ttr|VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|27 70|nsns| |td(off)f|RG = 10Ω (External)|26|ns| |Q|36|nC| |g(on)| |Qgs|VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25|16|nC| |Qgd|12|-|nC| |RthJC|0.42 °C/W| |RthCH|(TO-220)|0.50|°C/W| |(TO-247)|0.21|°C/W| |Source-Drain Diode| |Symbol|Test Conditions Characteristic Values| |(TJ = 25°C unless otherwise specified)|Min. Typ. Max.| |IS|VGS = 0V|14|A| |ISM|Repetitive, pulse width limited by TJM|42|A| |VSD|IF = IS, VGS = 0V, Note 1|1.5|V| |trr|IF = 14A, -di/dt = 100A/ 200μs|ns| |Ee|QIRMRM|VR 6.0 0.6 = 100V, VGS = 0V|es|A nC| **----- End of picture text -----**<br> Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. **==> picture [94 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 (IXFA) Outline<br>**----- End of picture text -----**<br> **TO-220 (IXFP) Outline** Pins: 1 - Gate 2 - Drain ~~I~~ NC ~~HE~~ S M ~~ILLI Se~~ ## **TO-247 (IXFH) Outline** **==> picture [117 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |∅ P| |1 2 3| |||oP| |ui| |a| |L| |bt|||A|l|L|E[I| |°|||b|2| |L|e| |Terminals:|1 - Gate 2 - Drain| |3 - Source| |Dim.|Millimeter|Inches| |Min.|Max.|Min.|Max.| |A|4.7|5.3|.185|.209| |A1|2.2|2.54|.087|.102| |A2|2.2|2.6|.059|.098| |b|1.0|1.4|.040|.055| |b1|1.65|2.13|.065|.084| |b2|2.87|3.12|.113|.123| |C|.4|.8|.016|.031| |D|20.80|21.46|.819|.845| |E|15.75|16.26|.610|.640| |e|5.20|5.72|0.205|0.225| |L|19.81|20.32|.780|.800| |L1|4.50|.177| |∅P|3.55|3.65|.140|.144| |Q|5.89|6.40|0.232|0.252| |R|4.32|5.49|.170|.216| |S|6.15|BSC|242|BSC| **----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFA14N60P IXFP14N60P IXFH14N60P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [249 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>VGS = 10V<br>12 9V<br>10<br>8V<br>8<br>6<br>4<br>7V<br>2<br>0<br>0 1 2 3 4 5 6 7 8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [251 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>VGS = 10V<br>12 8V<br>10<br>7V<br>8<br>6<br>4<br>2<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 7A Value<br>vs. Drain Current<br>3.4<br>VGS = 10V<br>3.0<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4 T J = 25ºC<br>1.0<br>0.6<br>0 3 6 9 12 15 18 21 24 27 30<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [252 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>VGS = 10V<br>27<br> 9V<br>24<br>21<br>18<br>8V<br>15<br>12<br>9<br>6<br>3 7V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature** **==> picture [253 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>VGS = 10V<br>2.8<br>2.4<br>I D = 14A<br>2.0<br>I D = 7A<br>1.6<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [254 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08-G **IXFA14N60P IXFP14N60P IXFH14N60P** ## **Fig. 7. Input Admittance** **==> picture [262 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>TJ = 125ºC<br>30 25ºC<br> - 40ºC<br>25<br>20<br>15<br>10<br>5<br>0<br>5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>50<br>45<br>40<br>35<br>30<br>25<br>20 TJ = 125ºC<br>15<br>10 TJ = 25ºC<br>5<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [249 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 27<br>24<br>TJ = - 40ºC<br>21 25ºC<br> 125ºC<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [246 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 300V<br> I D = 7A<br>8 I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20 24 28 32 36<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [529 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 100<br>f = 1 MHz<br>1,000 C iss RDS(on) Limit 25µs<br>100µs<br>100 Coss 10<br>1ms<br>10ms<br>10<br>Crss TJ = 150ºC<br>T C = 25ºC DC<br>Single Pulse<br>1 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFA14N60P IXFP14N60P IXFH14N60P** **==> picture [537 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1.00<br>0.10<br>0.01<br>0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08-G
Updated at April 27, 2026
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