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IXFP12N50P
Power MOSFET, N Channel, 500 V, 12 A, 0.5 ohm, TO-220, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiPerFET
- Qualification: -
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 12A
- Drain Source On State Resistance: 0.5ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.43 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM] Power MOSFET HiperFET[TM]** ## **IXFA12N50P IXFP12N50P** **V = 500V DSS I = 12A D25 R ≤ 500m Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated **TO-263 (IXFA)** ||||||**TO-263 (IXFA)XFA)**|**TO-263 (IXFA)XFA)**|**TO-263 (IXFA)XFA))**|| |---|---|---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**||**Maximum Ratin**|**Maximum Ratings**|**TO-263 (IXFA)XFA)**|**TO-263 (IXFA)XFA)**|**TO-263 (IXFA)XFA))**|| |**VDSS**<br>TJ = 25°C to 150°C<br>500<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>G<br>S<br>~~eR~~||||||||| |**VGSM**|Transient||±40|V|||(TAB)|| |**ID25**<br>**IDM**|TC = 25°C<br>TC = 25°C, pulse width limited by TJM||12<br>30|A<br>A|**TO-220 (IXFP)**|||| |**IA**|TC = 25°C||12|A||||| |**EAS**|TC = 25°C||600|mJ||||| |||||||||| |**dV/dt**<br>**PD**|IS<br>≤IDM, VDD ≤VDSS, T<br>TC = 25°C|, TJ ≤150°C|20<br>200|V/ns<br>W|D<br>G<br>S||(TAB)|(TAB)| |**TJ**|||-55 ... +150|°C||||| |**TJM**|||150|°C|G = Gate||D = Drain|D = Drain| |**Tstg**|||-55 ... +150|°C|S = Source||TAB = Drain|TAB = Drain| |**TL**|1.6mm (0.062) from case for 10s|1.6mm (0.062) from case for 10s|300|°C||||| |**TSOLD**|Plastic body for 10s||260|°C|**Features**|||| |**Md**|Mounting torque|(TO-220)|1.13 / 10|Nm/lb.in.|International standard packages|||International standard packages| |**Weight**|TO-263||2.5|g|Unclamped Inductive Switching|||Unclamped Inductive Switching| ||TO-220||3.0 g|3.0 g|(UIS) rated|||| **==> picture [116 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> G (TAB)<br>D<br>S<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br> International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect ## **Advantages** |**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>500|~~—~~|V| |**VGS(th)**<br>VDS = VGS, ID= 1mA<br>3.0|5.5 V<br>~~—~~|5.5 V| |**IGSS**<br>VGS =±30V, VDS= 0V<br>±|±<br>~~—~~|±100 nA| |**IDSS**<br>VDS = VDSS<br>VGS = 0V<br>TJ= 125°C<br>250|5<br>250<br>~~=~~|5μA<br>250μA| |**RDS(on)**<br>VGS = 10V, ID=0.5**•** ID25, Note 1<br>500 m|500 m<br>~~—~~|500 mΩ| Easy to mount Space savings High power density DS99436F(04/08) © 2008 IXYS CORPORATION, All rights reserved ## **IXFA12N50P IXFP12N50P** |**Symbol**<br>(TJ= 25°C, unless otherwise specified)|**Test Conditions Characteristic Values**<br>C, unless otherwise specified)**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|**Test Conditions Characteristic Values**<br>**Min. Typ. Max.**|| |---|---|---|---|---|---|---|---| |**gfs**|VDS= 20V, ID=0.5**•** ID25, Note 1|7.5 13 S|7.5 13 S<br>~~|~~||7.5 13 S|7.5 13 S|7.5 13 S| |**Ciss**||1830|1830|1830|||pF| |**Coss**|VGS= 0V, VDS= 25V, f = 1MHz|182|182|182|||pF| |**Crss**||16|16|16|||pF| |**td(on)**<br>**tr**|**Resistive Switching Times**<br>22<br>VGS= 10V, VDS= 0.5**•**VDSS, ID=0.5**•** ID25<br>27||22<br>27|22<br>27||ns|ns<br>ns| |**td(off)**<br>**tf**<br>**Qg(on)**<br>**Qgs**<br>**Qgd**|RG= 50Ω(External)<br>65<br>20<br>29<br>VGS= 10V, VDS= 0.5**•**VDSS, ID=0.5**•** ID25<br>11<br>10||65<br>20<br>29<br>11<br>10<br>7||||ns<br>ns<br>nC<br>nC<br>nC| |**RthJC**||0.62|0.62|0.62|0.62°C/W||| |**RthCS**|(TO-220)|0.50|0.50|0.50||°C/W|| |**Source-Drain Diode Characteristic Values**||**Source-Drain Diode Characteristic Values**|||**Source-Drain Diode Characteristic Values**||| |**Symbol**|(T<br>**Test Conditions Min. T**|(TJ= 25°C, unless otherwise specified)<br>**Test Conditions Min. Typ. Max.**|||||| |**IS**<br>**ISM**|VGS= 0V<br>Repetitive, pulse width limited by TJM||12 A<br>48 A|12 A<br>48 A|12 A<br>48 A|12 A<br>48 A|12 A<br>48 A| |**VSD**|IF= IS, VGS= 0V, Note 1||1.5 V|1.5 V|1.5 V|1.5 V|1.5 V| |**trr**<br>**QRM**<br>**IRM**|300 ns<br>2.8<br>**RM**<br>IF= 6A, -di/dt = 150A/μs,<br>VR= 100V, VGS= 0V|300 ns<br>2.8<br>**RM**18.2|300 ns<br>2.8<br>18.2|300 ns<br>2.8<br>18.2|300 ns<br>|300 ns<br>μ<br>|300 ns<br>μC<br>A| **TO-220 (IXFP) Outline** **==> picture [98 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>ee TROIS)<br>**----- End of picture text -----**<br> **==> picture [94 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 (IXFA) Outline<br>**----- End of picture text -----**<br> Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFA12N50P IXFP12N50P** **==> picture [257 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>12<br>V GS = 10V<br>10<br>8<br>7V<br>6<br>4<br>2<br>6V<br>0<br>0 1 2 3 4 5 6 7<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [243 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>VGS = 10V<br>10 7V<br>8<br>6<br>6V<br>4<br>2<br>5V<br>0<br>0 2 4 6 8 10 12<br>VD S - Volts<br>Fig. 5. RDS(on) Normalized to ID = 6A Value<br>vs. Drain Current<br>3.4<br>3.0 VGS = 10V<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4 T J = 25ºC<br>1.0<br>0.6<br>0 3 6 9 12 15 18 21 24 27 30<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>27 VGS = 10V<br> 8V<br>24<br>21<br>18<br>15<br>7V<br>12<br>9<br>6<br>6V<br>3<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature** **==> picture [244 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>2.4<br>VGS = 10V<br>2.2<br>2.0<br>1.8<br>1.6 I D = 12A<br>1.4<br>ID = 6A<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [245 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved **IXFA12N50P IXFP12N50P** **Fig. 7. Input Admittance** **==> picture [245 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14<br>12<br>10 TJ = 125ºC<br> 25ºC<br>8 - 40ºC<br>6<br>4<br>2<br>0<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [244 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>TJ = 125ºC<br>10<br>5 TJ = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [243 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>f = 1MHz<br>Ciss<br>1000<br>Coss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [241 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 27<br>24<br>21<br>18 T J = - 40ºC<br> 25ºC<br>15 125ºC<br>12<br>9<br>6<br>3<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> ## **Fig. 10. Gate Charge** **==> picture [226 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br>8 ID = 6A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>Q G - nanoCoulombs<br>**----- End of picture text -----**<br> **==> picture [7 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [246 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 150ºC<br>R DS(on) Limit TC = 25ºC<br>10 25µs<br>100µs<br>1ms<br>DC 10ms<br>1<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFA12N50P IXFP12N50P** ## **Fig. 13. Maximum Transient Thermal Impedance** **==> picture [523 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.01 0.1 1 10 100 1000<br>Pulse Width - milliseconds<br>C / W<br>º<br> -<br>( t h ) J C<br>Z<br>**----- End of picture text -----**<br> © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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