Image not available
Illustrative purposes only
IXFP10N60P
Power MOSFET, N Channel, 600 V, 10 A, 0.74 ohm, TO-220, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 200W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.74ohm
- Transistor Case Style: TO-220
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 10A
- Drain Source On State Resistance: 0.74ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2.2 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM ] HiPerFET Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **IXFA 10N60P IXFP 10N60P** **V = 600 V DSS I = 10 A D25 R ≤ 740 m Ω DS(on) trr ≤ 200 ns** |**Symbol**|**Test Conditions**<br>**Maximum Ratings**|**Test Conditions**<br>**Maximum Ratings**|**TO-263 (IXFA)**|**TO-263 (IXFA)**||| |---|---|---|---|---|---|---| |**VDSS**<br>TJ = 25°C to 175°C<br>600<br>V<br>**VDGR**<br>TJ = 25°C to 175°C; RGS= 1 MΩ<br>600<br>V<br>**VGS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~a~~||||G<br>S<br>(TAB)<br>SP.||| |**ID25**|TC = 25°C<br>10|A||||| |**IDM**|TC = 25°C, pulse width limited by TJM<br>25|A|**TO-220 (IXFP)**|||| |**IAR**<br>TC = 25°C<br>10<br>A<br>**EAR**<br>TC = 25°C<br>18<br>mJ<br>**EAS**<br>TC = 25°C<br>500<br>mJ<br>**dv/dt**<br>IS<br>≤IDM, di/dt≤100 A/μs, VDD ≤VDSS,<br>10<br>V/ns<br>TJ ≤150°C, RG= 10Ω<br>D<br>(TAB)<br>G<br>S<br>~~ay~~a||||||| |**PD**|TC = 25°C<br>200|W||||| |**TJ**|-55 ... +150|°C||G = Gate<br>D = Drain||| |**TJM**|150|°C||S = Source<br>TAB = Drain||| |**Tstg**|-55 ... +150|°C||||| |**TL**|1.6 mm (0.062 in.) from case for 10 s<br>300|°C||||| |**TSOLD**|Plastic body for 10 s<br>260|°C||||| |**Md**|Mounting torque<br>(TO-220)<br>1.13/10|Nm/lb.in.|**Features**|||| |**Weight**|TO-220<br>4|g||||| ||TO-263<br>3|g||International standard packages|International standard packages|International standard packages| |||||Fast Intrinsic Diode||| |||||Unclamped Inductive Switching (UIS)||| |**Symbol**|**Test Conditions**<br>**Characteristic Values**|||rated||| |(TJ= 25°C unless otherwise specified)|C unless otherwise specified)<br>**Min. Typ.**|**Max.**|:|Low package inductance||| |**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = 0 V, ID= 250μA<br>600<br>V<br>VDS = VGS, ID= 1 mA<br>3.0<br>5.5<br>V<br>VGS =±30 V, VDS= 0 V<br>±100<br>nA<br>VDS = VDSS<br>25<br>μA<br>VGS= 0 V<br>TJ= 125°C<br>500<br>μA<br>VGS = 10 V, ID= 0.5 ID25<br>740<br>mΩ<br>Pulse test, t≤300μs, duty cycle d≤2 %<br>- easy to drive and to protect<br>**Advantages**<br>Easy to mount<br>Space savings<br>High power density<br>~~7~~<br>~~TT.~~<br>~~|_~~|||||| International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect DS99424E(04/06) © 2006 IXYS All rights reserved **IXFA 10N60P IXFP 10N60P** |J<br>**Min.**<br>~~|~~|J<br>**Min.**<br>~~|~~|**Typ.**<br>~~|~~|**Max.**| |---|---|---|---| |**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>6<br>~~|~~||11<br>~~|~~|S| |**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**<br>~~|~~||1610<br>165<br>14<br>~~|~~|pF<br>pF<br>pF| |**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**td(off)**<br>RG= 10Ω(External)<br>**tf**||23<br>27<br>65<br>21|ns<br>ns<br>ns<br>ns| |**Q**||32|nC| |**Qg(on)**<br>**Qgs**<br>**Qgd**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25|32<br>12<br>10|nC<br>nC<br>nC| |**RthJC**<br>0.62<br>**RthCS**<br>(TO-220)||0.62<br>0.25|0.62 °C/W<br>°C/W| |**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**|||| |**IS**<br>VGS= 0 V|||10<br>A| |**I**<br>Repetitive|||30<br>A| |**ISM**<br>Repetitive<br>**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300μs, duty cycle d≤2 %|||30<br>A<br>1.5<br>V| |**trr**<br>IF= 10 A, -di/dt = 100 A/μs, VGS=0V, VR=100V<br>**QRM**<br>**trr**||120<br>0.32<br>3|200<br>ns<br>μC<br>A| ## **TO-263 (IXFA) Outline** ## **TO-220 (IXTP) Outline** **==> picture [99 x 15] intentionally omitted <==** **----- Start of picture text -----**<br> Pins: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXFA 10N60P IXFP 10N60P** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [232 x 631] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VGS = 10V<br>9<br> 7V<br>8<br>7 6V<br>6<br>5<br>4<br>3<br>2 5V<br>1<br>0<br>0 1 2 3 4 5 6 7<br>VD S - Volts<br>Fig. 3. Output Characteristics<br>@ 125ºC<br>10<br>9 VGS = 10V<br> 7V<br>8 6V<br>7<br>6<br>5<br>5V<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12 14<br>VD S - Volts<br>Fig. 5. RDS(on) Normalized to<br>0.5 ID25 Value vs. ID<br>3<br>2.8<br>VGS = 10V<br>2.6 TJ = 125º C<br>2.4<br>2.2<br>2<br>1.8<br>1.6<br>1.4<br>TJ = 25º C<br>1.2<br>1<br>0.8<br>0 5 10 15 20 25<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [230 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 24<br>VGS = 10V<br>21<br> 8V<br> 7V<br>18<br>15 6V<br>12<br>9<br>6<br>3 5V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** **==> picture [235 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>2.4 VGS = 10V<br>2.2<br>2<br>1.8<br>1.6 ID = 10A<br>1.4<br>1.2<br>ID = 5A<br>1<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>11<br>10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFA 10N60P IXFP 10N60P** **Fig. 7. Input Adm ittance** **==> picture [230 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6 T J =125º C<br> 25º C<br>4 -40º C<br>2<br>0<br>3.5 4 4.5 5 5.5 6 6.5<br>V G S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [233 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10 T J = 125º C TJ = 25º C<br>5<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>V S D - Volts<br>Fig. 11. Capacitance<br>10000<br>f = 1MHz<br>C iss<br>1000<br>C oss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>V D S - Volts<br> - Amperes<br>S<br>I<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [229 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14 TJ = -40º C<br> 25º C<br>12 125 º C<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 300V<br>8 ID = 5A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maxim um Transient Therm al Resistance** **==> picture [236 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.01 0.1 1 10 100 1000<br>Pulse Width - milliseconds<br>C / W<br>º<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions.
Updated at February 9, 2023
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →