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IXFN73N30
Power MOSFET, N Channel, 300 V, 73 A, 0.045 ohm, ISOTOP, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 520W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 520W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.045ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 73A
- Drain Source On State Resistance: 0.045ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 26.63 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr **V I R** DSS D25 DS(on) **IXFK 73 N 30 300 V 73 A 45 m Ω IXFN 73 N 30 300 V 73 A 45 m Ω t ≤ 200 ns** rr |**Symbol**|**Test Conditions**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---|---|---|---| |||||**IXFK**|**IXFN**|| |**VDSS**|TJ|= 25°C to 150°C||300|300|V| |**VDGR**|TJ|= 25°C to 150°C; RGS= 1 MΩ||300|300|V| |**VGS**|Continuous|||±20|±20|V| |**VGSM**|Transient|||±30|±30|V| |**ID25**|TC|= 25°C||73|73|A| |**IDM**|TC|= 25°C, pulse width limited by TJM||292|292|A| |**IAR**|TC|= 25°C||40|40|A| |**EAR**|TC|= 25°C||30|30|mJ| |**dv/dt**|IS|≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||5|5|V/ns| ||TJ|≤150°C, RG= 2 W||||| |**PD**|TC|= 25°C||500|520|W| |**TJ**||||-55 ... +150||°C| |**TJM**|||||150|°C| |**Tstg**||||-55 ... +150||°C| |**TL**|1.6 mm (0.063 in) from case for 10 s|1.6 mm (0.063 in) from case for 10 s||300|-|°C| |**VISOL**|50/60 Hz, RMS||t = 1 min|-|2500|V~| ||IISOL ≤1 mA||t = 1 s|-|3000|V~| |**Md**|Mounting torque|||0.9/6|1.5/13|Nm/lb.in.| ||Terminal connection torque|||-|1.5/13|Nm/lb.in.| |**Weight**||||10|30|g| **==> picture [161 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 AA (IXFK)<br>G (TAB)<br>D<br>S<br>miniBLOC, SOT-227 B (IXFN)<br>AL E153432 S<br>G<br>S<br>D<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br> Either Source terminal at miniBLOC can be used as Main or Kelvin Source ## **Features** International standard packages JEDEC TO-264 AA, epoxy meet UL94V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOS[TM] process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier |**Symbol**|**Test Conditions**|(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|**Characteristic Values**<br>= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**| |---|---|---|---|---| |**VDSS**<br>**VGS(th)**|VGS = 0 V, ID= 1 mA<br>VDS = VGS, ID= 8 mA||300<br>2|V<br>4<br>V| |**IGSS**<br>**IDSS**|VGS = ±20 VDC, VDS= 0<br>VDS = 0.8 VDSS|TJ= 25°C||±200<br>nA<br>400<br>uA| ||VGS = 0 V|TJ= 125°C||2<br>mA| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %||45<br>mΩ| ## **Applications** DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays ## **Advantages** Easy to mount Space savings High power density © 2001 IXYS All rights reserved 92805J (11/01) **IXFK 73N30 IXFN 73N30** ## **TO-264 AA Outline** **Symbol Test Conditions** ## **Characteristic Values** |J<br>**min.**|**typ.**|**max.**| |---|---|---| |**gfs**<br>VDS = 10 V; ID= 0.5 ID25, pulse test<br>)|50<br>_|S| |**Ciss**<br>**Coss**<br>VGS = 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**<br>)|9000<br>1500<br>580<br>_|pF<br>pF<br>pF| |**td(on)**<br>**tr**<br>VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**td(off)**<br>RG= 1Ω(External),<br>**tf**<br>||30<br>80<br>100<br>50|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>**Qgs**<br>VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>**Qgd**<br>||360<br>60<br>180<br>|-|nC<br>nC<br>nC<br>-| |**RthJC**<br>TO-264 AA<br>**RthCK**<br>TO-264 AA|0.15|0.25<br>K/W<br>K/W| |**RthJC**<br>miniBLOC, SOT-227 B<br>**RthCK**<br>miniBLOC, SOT-227 B|0.05|0.24<br>K/W<br>K/W| |**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**IS**<br>VGS = 0 V<br>73<br>A||| |**ISM**<br>Repetitive; pulse width limited by TJM<br>**VSD**<br>IF= 100 A, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %||292<br>A<br>1.5<br>V| |**trr**<br>**QRM**<br>IF= IS, -di/dt = 100 A/µs, VR= 100 V<br>**IRM**<br>;<br>3|2<br>40<br>;|200<br>ns<br>µC<br>A<br>;| |||| M4 screws (4x) supplied |Dim.<br>Min.|Millimeter<br>Min.<br>Max.<br>Min.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>31.50<br>B<br>7.80|31.50<br>31.88<br>1.240<br>7.80<br>8.20<br>0.307|1.240<br>1.255<br>0.307<br>0.323| |C<br>4.09<br>D<br>4.09|4.09<br>4.29<br>0.161<br>4.09<br>4.29<br>0.161|0.161<br>0.169<br>0.161<br>0.169| |E<br>4.09<br>F<br>14.91|4.09<br>4.29<br>0.161<br>14.91<br>15.11<br>0.587|0.161<br>0.169<br>0.587<br>0.595| |G<br>30.12<br>H<br>38.00|30.12<br>30.30<br>1.186<br>38.00<br>38.23<br>1.496|1.186<br>1.193<br>1.496<br>1.505| |J<br>11.68<br>K<br>8.92|11.68<br>12.22<br>0.460<br>8.92<br>9.60<br>0.351|0.460<br>0.481<br>0.351<br>0.378| |L<br>0.76<br>M<br>12.60|0.76<br>0.84<br>0.030<br>12.60<br>12.85<br>0.496|0.030<br>0.033<br>0.496<br>0.506| |N<br>25.15<br>O<br>1.98|25.15<br>25.42<br>0.990<br>1.98<br>2.13<br>0.078|0.990<br>1.001<br>0.078<br>0.084| |P<br>4.95<br>Q<br>26.54|4.95<br>5.97<br>0.195<br>26.54<br>26.90<br>1.045|0.195<br>0.235<br>1.045<br>1.059| |R<br>3.94<br>S<br>4.72|3.94<br>4.42<br>0.155<br>4.72<br>4.85<br>0.186|0.155<br>0.174<br>0.186<br>0.191| |T<br>24.59<br>U<br>-0.05|24.59<br>25.07<br>0.968<br>-0.05<br>0.1<br>-0.002|0.968<br>0.987<br>-0.002<br>0.004| IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 **IXFK 73N30 IXFN 73N30** Fig. 1 Output Characteristics Fig. 2 Input Admittance **==> picture [484 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 160 160<br>VGS = 10V 8V<br>140 “TL ALLo 7V 140 “COLL LUILL$&E<br>TJ = 25°C<br>120 | A A 120 TOPE Ee<br>TJ = 25°C<br>100 TTA Ie 100 PPP ee<br>6V<br>80 fee 80 TOPE CTE<br>TATTLE COPECO ee<br>60 60<br>40 = Ane 40 TOPE CEE<br>5V<br>20 (Je 20 COPE OEE<br>0 7T LLL 0 COE LPECEe<br>0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts VGS - Volts<br>Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence<br>of Drain to Source Resistance<br>2.0 2.50<br>TJ = 25°C 2.25<br>1.8 ee, Pf fT tT et<br>2.00<br>1.6 fo Pt 4<br>VGS = 10V 1.75 ID = 40A<br>1.4 1.50<br>1.2 S E V Ae GS = 15V ee 1.25 ceeee cee<br>1.00<br>o A LZ<br>1.0 A Eee<br>0.75<br>ot<br>0.8 rT | | fl | 0.50 aPTaa<br>0 40 80 120 160 200 240 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TJ - Degrees C<br> - Amperes - Amperes<br>ID ID<br> - Normalized - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> Fig. 5 Drain Current vs. Case Temperature **==> picture [212 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 a<br>60 SESS<br>50<br>PE AE<br>4030 TCE E ECEEN<br>20<br>100 FESS)THEE Pi | | ft LEI fe<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage **==> picture [215 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>V BVDSS<br>GS(th) —<br>1.1<br>1.0 ASCEcaseE=<br>0.9<br>0.8<br>CCCP RAE=—<br>0.7<br>FREES<br>0.60.5 P| | | t | |<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> © 2001 IXYS All rights reserved **IXFK 73N30 IXFN 73N30** Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves **==> picture [481 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000<br>VDS = 150V 9000 Ciss<br>8 ID = 42A 8000<br>IG = 10mA 7000<br>6 ees 6000 eee<br>Te<br>f = 1MHz<br>5000<br>VDS = 25V<br>4 4000<br>fo] 3000 IRE Coss<br>2 2000<br>Poe 1000 ASE Crss<br>0 0<br>0 50 100 150 200 250 300 350 400 0 5 10 15 20 25<br>Gate Charge - nCoulombs VDS - Volts<br>Fig.9 Source Current vs. Source<br>to Drain Voltage<br>160<br>140<br>120 i | | tf |<br>100<br>| | | | ty |<br>80<br>|| | TJ = 125°C | lA | tT<br>60<br>| | YA) | |<br>40<br>|] | | Ay tt<br>TJ = 25°C<br>20<br>| | yp<br>0<br>pt [T] [AA] | |<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD - Volts<br>Fig.10 Transient Thermal Impedance<br>Ete<br>0.1<br>es<br>=ae<br>sD<br>0.01<br>0.001 PE 0.01 0.1 1<br>Time - Seconds<br> - Volts<br>GE<br>V<br>Capacitance - pF<br> - Amperes<br>ID<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Updated at February 9, 2023
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