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IXFN64N50P
Power MOSFET, PolarFET, N Channel, 500 V, 64 A, 0.085 ohm, ISOTOP, Module
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 700W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 700W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.085ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 64A
- Drain Source On State Resistance: 0.085ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 19.51 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM ] Power MOSFET HiPerFET[TM]** ## **IXFN64N50P** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>500<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~— -~~<br>~~oo~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>500<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~— -~~<br>~~oo~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>500<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~— -~~<br>~~oo~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 150°C<br>500<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>500<br>V<br>**VGSS**<br>Continuous<br>±30<br>V<br>**VGSM**<br>Transient<br>±40<br>V<br>~~— -~~<br>~~oo~~| |---|---|---|---| |**ID25**<br>**IDM**|TC = 25°C<br>TC = 25°C, Pulse Width Limited by TJM|50<br>150|A<br>A| |**IA**<br>**EAS**|TC = 25°C<br>TC = 25°C|64<br>2.5|A<br>J| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|20|V/ns| |**PD**|TC = 25°C|625|W| |**TJ**<br>**TJM**<br>**Tstg**||-55 ... +150<br>150<br>-55 ... +150|°C<br>°C<br>°C| |**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C| |**VISOL**|50/60 Hz, RMS t = 1min|2500|V~| ||IISOL ≤1mA t = 1s|3000 V~|3000 V~| |**Md**|Mounting Torque<br>1.5/13<br>Terminal Connection Torque|1.5/13<br>1.3/11.5 Nm/lb.in.|Nm/lb.in.<br>1.3/11.5 Nm/lb.in.| |**Weight**||30|g| **V = 500V DSS I = 50A D25 R ≤ 85m Ω DS(on) t ≤ 200ns rr** **miniBLOC, SOT-227 B E153432** S G A — S D G = Gate D = Drain S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source ## **Features** International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ Fast Intrinsic Diode Avalanche Rated Low R DS(on) ## **Advantages** Low Gate Drive Requirement High Power Density ## **Applications:** |**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ.**<br>~~r~~|**Min. Typ. **<br>~~r~~|**Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>500<br>~~r~~|~~r~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8mA<br>3.0<br>~~r~~<br>~~|~~|5.5 V<br>~~r~~<br>~~_~~<br>~~||~~|5.5 V| |**IGSS**<br>VGS =±30V, VDS= 0V<br>~~|~~|±<br>~~_~~<br>~~||~~|±200 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125°1 mA<br>~~|~~<br>~~|~~|25<br>1 mA<br>~~| |~~-<br>~~||~~|25μA<br>1 mA| |**RDS(on)**<br>VGS = 10V, ID= 32A, Note 1<br>~~|~~|85 m<br>~~||~~|85 mΩ| Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99349F(05/09) © 2009 IXYS CORPORATION, All Rights Reserved ## **IXFN64N50P** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> <br>| |---|---|---| |(TJ= 25°C, Unless Otherwise Specified)<br>**Min. **|**Typ.**|**Max.**| |**gfs**<br>VDS = 20V, ID= 32A, Note 1 30<br><br>|50<br>|S<br>| |**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|9700<br>970<br>30|nF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 32A<br>RG= 2Ω(External)|30<br>25<br>85<br>22|ns<br>ns<br>ns<br>ns| ## **SOT-227B Outline** |**Source-Drain Diode**|**Source-Drain Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|| |---|---|---|---|---|---| ||(TJ=|25°C, Unless Otherwise Specified)|||| |**Symbol**|**Test Conditions**|**Min. **|**Typ.**|**Max.**|| |**IS**|VGS= 0V|||64|A| |**ISM**|Repetitive, Pulse Width Limited by TJM|||250|A| |**VSD**|IF= 64A, VGS= 0V, Note 1|||1.5|V| |**trr**<br>**QRM**<br>**IRM**|<br> <br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V|<br> <br>|<br>0.6<br> 6.0|200<br> <br>|ns<br>μC<br>A| Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFN64N50P** **==> picture [532 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>70 160<br>VGS = 10V V GS = 10V<br>60 8V 140 8V<br>7V<br>120<br>50<br>100<br>6V 7V<br>40<br>80<br>30<br>60<br>6V<br>20 40<br>5V<br>10 20 5V<br>0 0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - AmperesID - AmperesID<br>**----- End of picture text -----**<br> ## **Fig. 3. Output Characteristics @ 125ºC** **Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature** **==> picture [528 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 70 3.2<br>60 V 8V GS = 10V 3.02.8 VGS = 10V<br> 7V<br>2.6<br>50 2.4<br>6V 2.2 I D = 64A<br>40 2.0<br>1.8 I D = 32A<br>30 1.6<br>1.4<br>20 1.2<br>5V<br>1.0<br>10 0.8<br>0.6<br>0 0.4<br>0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 32A Value Fig. 6. Maximum Drain Current vs.<br>vs. Drain Current Case Temperature<br>3.4 55<br>3.2 V GS = 10V 50<br>3.0 TJ = 125ºC 45<br>2.8<br>40<br>2.6<br>35<br>2.4<br>2.2 30<br>2.0 25<br>1.8 20<br>1.6<br>15<br>1.4<br>TJ = 25ºC 10<br>1.2<br>1.0 5<br>0.8 0<br>0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2009 IXYS CORPORATION, All Rights Reserved ## **IXFN64N50P** **==> picture [260 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>90<br>80<br>70<br>60<br>50<br>T J = 125ºC<br>40 25 º C<br>- 40ºC<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [249 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60 TJ = 125ºC<br>40<br>20 TJ = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [262 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>90<br>80 TJ = - 40ºC<br>70<br>60 25ºC<br>50<br>125ºC<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 250V<br> I D = 32A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [529 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1.000<br>f = 1 MHz<br>Ciss<br>10,000<br>1,000 0.100<br>Coss<br>100<br>C rss<br>10 0.010<br>0 5 10 15 20 25 30 35 40 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_64N50P(9J)4-27-09
Updated at February 9, 2023
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