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IXFN48N50
Power MOSFET, N Channel, 500 V, 48 A, 0.1 ohm, ISOTOP, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 520W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 520W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.1ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 48A
- Drain Source On State Resistance: 0.1ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 20.36 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** **V I R** DSS D25 DS(on) **500 V 44 A 0.12 Ω 500 V 48 A 0.10 Ω t ≤ 250 ns** rr **IXFK / IXFN 44 N50 IXFK / IXFN 48 N50** N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr |**Symbol**<br>**VDSS**<br>**VDGR**<br>**VGS**|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>500<br>500<br>V<br>500<br>500<br>V<br>±20<br>±20<br>V|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>500<br>500<br>V<br>500<br>500<br>V<br>±20<br>±20<br>V|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>500<br>500<br>V<br>500<br>500<br>V<br>±20<br>±20<br>V|S<br>G<br>D<br>**TO-264 AA**<br>**(IXFK)**<br>(TAB)<br>=|S<br>G<br>D<br>**TO-264 AA**<br>**(IXFK)**<br>(TAB)<br>=| |---|---|---|---|---|---|---|---| |**VGSM**|Transient||±30|±30|V||| |**ID25**|TC = 25°C|44N50|44|44|A||| |||48N50|48|48|A|**miniBLOC, SOT-227 B (IXFN)**|| |**IDM**|TC = 25°C,|44N50|176|176|A|S<br>**E153432**|| ||pulse width limited by TJM|48N50|192|192|A|D<br>G|| |**IAR**|TC = 25°C||24|24|A||| |**EAR**|TC = 25°C||30|30|mJ|G|| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>TJ ≤150°C, RG= 2Ω||5|5|V/ns|S<br>S|S<br>D| |**PD**|TC = 25°C||500|520|W|G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain|| |**TJ**|||-55 ... +150||°C|Either Source terminal at miniBLOC can be used|| |**TJM**||||150|°C|as Main or Kelvin Source|| |**Tstg**|||-55 ... +150||°C||| |**TL**|1.6 mm (0.063 in) from case for 10 s|1.6 mm (0.063 in) from case for 10 s|300|-|°C|**Features**<br>International standard packages|| |**VISOL**|50/60 Hz, RMS<br>t = 1 min||-|2500|V~|Molding epoxies meet UL 94 V-0|| ||IISOL ≤1 mA<br>t = 1 s||-|3000|V~|flammability classification|| |**Md**|Mounting torque<br>Terminal connection torque||0.9/6<br>-|1.5/13<br>1.5/13|Nm/lb.in.<br>Nm/lb.in.|SOT-227B miniBLOC with aluminium<br>nitride isolation<br>Low RDS (on)HDMOSTMprocess|| |**Weight**|||10|30|g|Unclamped Inductive Switching (UIS)|| Either Source terminal at miniBLOC can be used as Main or Kelvin Source International standard packages Molding epoxies meet UL 94V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOS[TM] process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier **Symbol Test Conditions** ## **Characteristic Values** |**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---| |||(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|||| |**VDSS**|VGS = 0 V, ID= 1 mA|500|||V| |**VGS(th)**|VDS = VGS, ID= 8 mA|2||4|V| |**IGSS**<br>**IDSS**|VGS =±20 VDC, VDS= 0<br>VDS = 0.8 • VDSS<br>VGS = 0 V|TJ= 25°C<br>TJ= 125°C||±200<br>400<br>2|nA<br>µA<br>mA| |**RDS(on)**|VGS = 10 V, ID= 0.5 • ID25|44N50||0.12|Ω| |||48N50||0.10|Ω| ||Pulse test,t≤300µs,dutyc|cycle d≤2 %|||| ## **Applications** DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls ## **Advantages** Easy to mount Space savings High power density 93001I (07/00) IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved C1 - 184 **IXFN / IXFK 44N50 IXFN / IXFK 48N50** |**Symbol**|**Test Conditions**|(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||**min.**||**typ.**|**max.**||||||||| |**gfs**|VDS = 10 V; ID= 0.5 • ID25, pulse test||22||42||S|||||||| |**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**|VGS = 0 V, VDS= 25 V, f = 1 MHz||||8400<br>900<br>280<br>30<br>-||pF<br>pF<br>pF<br>ns|||Al||||| |**tr**|VGS = 10 V, VDS= 0.5 • V|= 0.5 • VDSS, ID= 0.5 • ID25|||60||ns|||||||| |**td(off)**|RG= 1Ω(External),||||100||ns|||||||| |**tf**|||||30||ns|||||||| |**Qg(on)**<br>**Qgs**<br>**Qgd**|VGS = 10 V, VDS= 0.5 • V<br>)<br>>|= 0.5 • VDSS, ID= 0.5 • ID25|||270<br>60<br>135||nC<br>nC<br>nC||A<br>A1<br>A2<br>Dim.||Millimeter<br>Min.<br>Max.<br>4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10||Inches<br>Min.<br>Max.<br>.190<br>.202<br>.100<br>.114<br>.079<br>.083|| |**RthJC**|TO-264 AA|||||0.25|K/W||b<br>b1||1.12<br>2.39|1.42<br>2.69|.044<br>.094|.056<br>.106| |**RthCK**|TO-264 AA||||0.15||K/W||b2<br>c||2.90<br>0.53|3.09<br>0.83|.114<br>.021|.122<br>.033| |**RthJC**|miniBLOC, SOT-227 B|||||0.24|K/W||D<br>E||25.91<br>19.81|26.16<br>19.96|1.020<br>.780|1.030<br>.786| |**RthCK**|miniBLOC, SOT-227 B||||0.05||K/W||e<br>J||5.46 BSC<br>0.00|5.46 BSC<br>0.25|.215 BSC<br>.000|.215 BSC<br>.010| ||||||||||K||0.00|0.25|.000|.010| ||||||||||L||20.32|20.83|.800|.820| |**Source-Drain Diode**|**Source-Drain Diode**||**Characteristic Values**||||||L1||2.29|2.59|.090|.102| |||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|||||P<br>Q||3.17<br>6.07|3.66<br>6.27|.125<br>.239|.144<br>.247| |**Symbol**|**Test Conditions**||**min.**||**typ.**|**max.**|||Q1||8.38|8.69|.330|.342| ||||||||||R||3.81|4.32|.150|.170| |**IS**|VGS = 0 V|||||48|A||R1<br>S||1.78<br>6.04|2.29<br>6.30|.070<br>.238|.090<br>.248| ||||||||||T||1.57|1.83|.062|.072| |**ISM**|Repetitive; pulse width limited by TJM|||||192|A|||||||| |**VSD**|IF= 100 A, VGS= 0 V,|||||1.5|V|**miniBLOC, SOT-227 B**||||||| ||Pulse test, t≤300µs, duty cycle d≤2 %|||||||||||||| |**trr**||||||250|ns|||||||| |**QRM**|IF= IS, -di/dt = 100 A/µs, VR= 100 V||||TBD||µC|||||||| |**IRM**|||||20||A|||||||| |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>31.50<br>B<br>7.80|31.50<br>31.88<br>7.80<br>8.20|1.240<br>1.255<br>0.307<br>0.323| |C<br>4.09<br>D<br>4.09|4.09<br>4.29<br>4.09<br>4.29|0.161<br>0.169<br>0.161<br>0.169| |E<br>4.09<br>F<br>14.91|4.09<br>4.29<br>14.91<br>15.11|0.161<br>0.169<br>0.587<br>0.595| |G<br>30.12<br>H<br>38.00|30.12<br>30.30<br>38.00<br>38.23|1.186<br>1.193<br>1.496<br>1.505| |J<br>11.68<br>K<br>8.92|11.68<br>12.22<br>8.92<br>9.60|0.460<br>0.481<br>0.351<br>0.378| |L<br>0.76<br>M<br>12.60|0.76<br>0.84<br>12.60<br>12.85|0.030<br>0.033<br>0.496<br>0.506| |N<br>25.15<br>O<br>1.98|25.15<br>25.42<br>1.98<br>2.13|0.990<br>1.001<br>0.078<br>0.084| |P<br>4.95<br>Q<br>26.54|4.95<br>5.97<br>26.54<br>26.90|0.195<br>0.235<br>1.045<br>1.059| |R<br>3.94<br>S<br>4.72|3.94<br>4.42<br>4.72<br>4.85|0.155<br>0.174<br>0.186<br>0.191| |T<br>24.59<br>U<br>-0.05|24.59<br>25.07<br>-0.05<br>0.1|0.968<br>0.987<br>-0.002<br>0.004| IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 © 2000 IXYS All rights reserved C1 - 185 **IXFN / IXFK 44N50 IXFN / IXFK 48N50** ## Fig. 1 Output Characteristics **==> picture [203 x 553] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 TJ = 25°C VGS = 10V 7V<br>6V<br>80<br>70<br>60<br>50<br>40<br>5V<br>30<br>20<br>10<br>0<br>0 5 10 15 20 25 30 35<br>VDS - Volts<br>Fig. 3 RDS(on) vs. Drain Current<br>1.6<br>TJ = 25°C<br>1.5<br>1.4<br>1.3<br>VGS = 10V<br>1.2<br>VGS = 15V<br>1.1<br>1.0<br>0.9<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br>Fig. 5 Drain Current vs.<br>Case Temperature<br>60<br>48N50<br>50<br>44N50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## Fig. 2 Input Admittance **==> picture [206 x 554] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70 TJ = 25°C<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Volts<br>Fig. 4 Temperature Dependence<br>of Drain to Source Resistance<br>2.50<br>2.25<br>2.00<br>1.75<br>ID = 24A<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br>Fig. 6 Temperature Dependence of<br>Breakdown and Threshold Voltage<br>1.2<br>VGS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage © 2000 IXYS All rights reserved C1 - 186 **IXFN / IXFK 44N50 IXFN / IXFK 48N50** ## Fig.7 Gate Charge Characteristic Curve ## Fig.8 Capacitance Curves **==> picture [200 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br>8 ID = 24A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 50 100 150 200 250 300 350 400<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [96 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Gate Charge - nCoulombs<br>**----- End of picture text -----**<br> **==> picture [208 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>9000<br>8000 Ciss<br>7000<br>f = 1 MHz<br>6000<br>VDS = 25V<br>5000<br>4000<br>3000<br>2000<br>1000 Coss<br>Crss<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> **==> picture [452 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.9 Source Current vs. Source<br>to Drain Voltage<br>100<br>90<br>80<br>70<br>60<br>50<br>40 TJ = 125°C<br>30<br>20 TJ = 25°C<br>10<br>0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>VSD - Volt<br>Fig.10 Transient Thermal Impedance<br>0.1<br>0.01<br>0.001 0.01 0.1 1<br>Time - Seconds<br> - Amperes<br>ID<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved C1 - 187
Updated at February 9, 2023
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