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IXFN32N120
Power MOSFET, N Channel, 1.2 kV, 32 A, 0.35 ohm, ISOTOP, Module
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 780W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 780W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.35ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 1.2kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 32A
- Drain Source On State Resistance: 0.35ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 65.86 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Advanced Technical Data ## **HiPerFET[TM] Power MOSFETs** ## **IXFN 32N120** **V = 1200V DSS I = 32A D25 R = 0.35 Ω DS(on)** N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr **==> picture [44 x 61] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>S<br>S<br>**----- End of picture text -----**<br> |||S|S||| |---|---|---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**miniBLOC, SOT-227 B (IXFN)**|| |||||**E153432**|**E153432**| |**VDSS**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VDGR**<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>1200<br>V<br>OO|||||G<br>S| |**VGS**|Continuous|±30|V||| |**VGSM**|Transient|±40|V||| |**ID25**|TC = 25°C, Chip capability|32|A||| ||||||D| |**IDM**|TC = 25°C, pulse width limited by TJM|128|A||| |**IAR**|TC = 25°C|32|A|G = Gate<br>D = Drain|| |**EAR**|TC = 25°C|64|mJ|S = Source<br>TAB = Drain|| |**EAS**|TC = 25°C|4|J|Either Source terminal at miniBLOC can be used|| |**dv/dt**|IS≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|15|V/ns|as Main or Kelvin Source|| ||TJ≤150°C, RG= 2Ω||||| |**PD**<br>**TJ**<br>**TJM**|TC= 25°C<br>-55 ... +150|780<br>-55 ... +150<br>150|W<br>°C<br>°C|**Features**<br>•<br>International standard package<br>•<br>miniBLOC, with Aluminium nitride<br>isolation|| |**Tstg**||-55 ... +150|°C|•|Low RDS (on)HDMOSTMprocess| |**VISOL**|50/60 Hz, RMS<br>t = 1 min<br>IISOL ≤1 mA<br>t = 1 s|2500<br>3000|V~<br>V~|•<br>structure|Rugged polysilicon gate cell<br>structure| |**Md**|Mounting torque<br>Terminal connection torque|1.5/13 <br>1.5/13|Nm/lb.in.<br> Nm/lb.in.|•<br>rated<br>•|Unclamped Inductive Switching (UIS)<br>rated<br>Low package inductance| |**Weight**||30|g|•|Fast intrinsic Rectifier| **==> picture [69 x 69] intentionally omitted <==** **----- Start of picture text -----**<br> S<br>G<br>S<br>D<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source - International standard package - miniBLOC, with Aluminium nitride - isolation - Low RDS (on) HDMOS[TM] process - Rugged polysilicon gate cell - structure - Unclamped Inductive Switching (UIS) - rated - Fast intrinsic Rectifier |**min.**|**typ.**|**max.**| |---|---|---| |**VDSS**<br>VGS = 0 V, ID= 3 mA<br>1200<br>**VGS(th)**<br>VDS = VGS, ID= 8 mA<br>2.5||V<br>5.0<br>V| |**IGSS**<br>VGS(th)=±30 VDC, VDS= 0||±200<br>nA| |**IDSS**<br>VDS = VDSS<br>TJ= 25°C<br>VGS = 0 V<br>TJ= 125°C||50<br>µA<br>3<br>mA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 • ID25<br>Pulse test, t≤300µs,<br>duty cycle d≤2 %||0.35<br>Ω| ## **Applications** - DC-DC converters - Battery chargers - Switched-mode and resonant-mode - power supplies - DC choppers - Temperature and lighting controls ## **Advantages** - Easy to mount - Space savings - High power density © 2003 IXYS All rights reserved DS98968B(10/03) **IXFN 32N120** |**Symbol**|**Test**|**Conditions**|**Conditions**||**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---|---|---|---| |||||(TJ= 25°C, unless||otherwise specified)||| ||||||**min.**|**typ.**|**max.**|| |**gfs**|VDS|= 20 V; ID= 0.5 • ID25, pulse test|||28|52||S| |**Ciss**||||||15900||pF| |**Coss**||VGS|= 0 V, VDS= 25 V, f = 1 MHz|||1000||pF| |**Crss**||||||260||pF| |**td(on)**||||||36||ns| |**tr**||VGS|= 10 V, VDS= 0.5|• VDSS, ID= 0.5 • ID25||42||ns| |**td(off)**||RG= 1Ω(External),||||98||ns| |**tf**||||||22||ns| |**Qg(on)**||||||400||nC| |**Qgs**||VGS|= 10 V, VDS= 0.5|• VDSS, ID= 0.5 • ID25||70||nC| |**Qgd**||||||188||nC| |**RthJC**|||||||0.16|K/W| |**RthCK**||||||0.05||K/W| **==> picture [97 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> miniBLOC, SOT-227 B<br>**----- End of picture text -----**<br> |M4 screws (4x) supplied|M4 screws (4x) supplied|M4 screws (4x) supplied| |---|---|---| |Dim.<br>|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |A<br>3<br>B|1.50<br>31.88<br>7.80<br>8.20|1.240<br>1.255<br>0.307<br>0.323| |C<br>D|4.09<br>4.29<br>4.09<br>4.29|0.161<br>0.169<br>0.161<br>0.169| |E<br>F<br>1|4.09<br>4.29<br>4.91<br>15.11|0.161<br>0.169<br>0.587<br>0.595| |G<br>3<br>H<br>3|0.12<br>30.30<br>8.00<br>38.23|1.186<br>1.193<br>1.496<br>1.505| |J<br>1<br>K|1.68<br>12.22<br>8.92<br>9.60|0.460<br>0.481<br>0.351<br>0.378| |L<br>M<br>1|0.76<br>0.84<br>2.60<br>12.85|0.030<br>0.033<br>0.496<br>0.506| |N<br>2<br>O|5.15<br>25.42<br>1.98<br>2.13|0.990<br>1.001<br>0.078<br>0.084| |P<br>Q<br>2|4.95<br>5.97<br>6.54<br>26.90|0.195<br>0.235<br>1.045<br>1.059| |R<br>S|3.94<br>4.42<br>4.72<br>4.85|0.155<br>0.174<br>0.186<br>0.191| |T<br>2<br>U<br>-|4.59<br>25.07<br>0.05<br>0.1<br>|0.968<br>0.987<br>-0.002<br>0.004| |**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---|---| ||(TJ= 25°C,|unless|otherwise specified)|||| |**Symbol**|**Test Conditions**|**min.**||**typ.**|**max.**|| |**IS**|VGS = 0 V||||32|A| |**ISM**|Repetitive;||||128|A| ||pulse width limited by TJM|||||| |**VSD**|IF= IS, VGS= 0 V,||||1.3|V| ||Pulse test, t≤300µs, duty cycle d≤2 %|||||| |**trr**|IF= 25A, -di/dt = 100 A/µs, VR= 100 V|||180|300|ns| |**QRM**||||1.4||µC| |**IRM**||||8||A| IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 **IXFN 32N120** **Fig. 1. Output Characteristics @ 25 Deg. C** **Fig. 2. Extended Output Characteristics @ 25 deg. C** **==> picture [499 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 32 60<br>VGS = 10V VGS = 10V<br>28 5V 6V<br>50<br>24<br>40<br>20<br>5V<br>16 30<br>12<br>20<br>8<br>10<br>4 4V<br>4V<br>0 0<br>0 2 4 6 8 10 12 0 5 10 15 20 25 30<br>V D S - Volts V D S - Volts<br> - AmperesI D - AmperesI D<br>**----- End of picture text -----**<br> **==> picture [509 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID25 Value vs.<br>@ 125 Deg. C Junction Temperature<br>32 2.6<br>28 5V VGS = 10V 2.4 VGS = 10V<br>2.2<br>24<br>2<br>20 1.8 ID = 32A<br>1.6<br>16 I D = 16A<br>1.4<br>12 1.2<br>4V<br>1<br>8<br>0.8<br>4<br>0.6<br>0 0.4<br>0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150<br>V D S - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID25 Fig. 6. Drain Current vs. Case<br> Value vs. ID Temperature<br>2.6 35<br>2.4 V GS = 10V<br>30<br>2.2 T J = 125ºC<br>25<br>2<br>1.8 20<br>1.6 15<br>1.4<br>TJ = 25ºC 10<br>1.2<br>5<br>1<br>0.8 0<br>0 8 16 24 32 40 48 56 64 -50 -25 0 25 50 75 100 125 150<br>I D - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>D<br>I<br>D S (on)<br>R<br> - Normalized<br> - Amperes<br>D<br>I<br>D S (on)<br>R<br>**----- End of picture text -----**<br> © 2003 IXYS All rights reserved **IXFN 32N120** **Fig. 7. Input Admittance** **==> picture [229 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>36<br>32<br>28<br>24<br>20<br> TJ = 125ºC<br>16 25 º C<br> -40ºC<br>12<br>8<br>4<br>0<br>3 3.5 4 4.5 5 5.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [232 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>20<br>TJ = 25ºC<br>10<br>0<br>0.2 0.4 0.6 0.8 1 1.2 1.4<br>V S D - Volts<br> - Amperes<br>I S<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [230 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>TJ = -40ºC<br>60 25ºC<br> 125ºC<br>50<br>40<br>30<br>20<br>10<br>0<br>0 8 16 24 32 40 48 56 64<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 600V<br>ID = 16A<br>8 I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 50 100 150 200 250 300 350 400 450<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [232 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>f = 1MHz<br>C iss<br>10000<br>Coss<br>1000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Resistance** **==> picture [240 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 0.18<br>0.16<br>0.14<br>0.12<br>0.1<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>1 10 100 1000<br>Pulse Width - milliseconds<br>(ºC/W)<br> -<br>(th) J C<br>R<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Updated at February 9, 2023
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