Image not available
Illustrative purposes only
IXFN230N10
Power MOSFET, N Channel, 100 V, 230 A, 0.006 ohm, ISOTOP, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 700W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 700W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.006ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 230A
- Drain Source On State Resistance: 0.006ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 26.21 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Power MOSFET Single Die MOSFET** N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ## **IXFN230N10** **V = 100V DSS I = 230A D25 R ≤ 6.0m Ω DS(on) t ≤ 250ns rr** **miniBLOC, SOT-227 B** AY **E153432** S |||||**miniBLOC, SOT-227 B**<br>**E153432**<br>AY| |---|---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**E153432**<br>AY| |**VDSS**<br>TJ = 25°C to 150°C<br>100<br>V<br>**VDGR**<br>TJ = 25°C to 150°C, RGS= 1MΩ<br>100<br>V<br>**VGSS**<br>Continuous<br>±20<br>V<br>**VGSM**<br>Transient<br>±30<br>V<br>S<br>G<br>S<br>~~=i,~~||||| |**ID25**|TC = 25°C, Chip capability|230|A|D| |**IL(RMS)**|External lead current limit|200|A|| |**IDM**|TC = 25°C, pulse width limited by TJM|920|A|G = Gate<br>D = Drain| |**IA**|TC = 25°C|100|A|S = Source| |**EAS**|TC = 25°C|4|J|Either Source terminal at miniBLOC can be used<br>as Main or Kelvin Source| |**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|10|V/ns|| |**Pd**|TC = 25°C|700|W|**Features**| |**TJ**|-55 ... +150|-55 ... +150|°C|• International standard package| |**TJM**||150|°C|• miniBLOC, with Aluminium nitride<br>isolation| |**Tstg**<br>**VISOL**<br>**Md**|50/60 Hz, RMS<br>t = 1min<br>IISOL ≤1mA<br>t = 1s<br>Mounting torque<br>Terminal connection torque|-55 ... +150<br>2500<br>3000 V~<br>1.5/13<br>1.3/11.5 Nm/lb.in.|°C<br>V~<br>3000 V~<br>Nm/lb.in.<br>1.3/11.5 Nm/lb.in.|• Low RDS (on)HDMOSTMprocess<br>• Rugged polysilicon gate cell structure<br>• Avalanche rated<br>• Guaranteed FBSOA| |**Weight**||30 g|30 g|• Low package inductance| - Rugged polysilicon gate cell structure - Fast intrinsic Rectifier ## **Advantages** - Easy to mount - Space savings |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>~~|~~|**Typ. Max.**<br>~~|~~|**Typ. Max.**| |---|---|---| |**BVDSS**<br>VGS = 0V, ID= 3mA<br>100<br>~~|~~|~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8mA<br>2.0<br>~~|~~|4.0<br>~~||~~|4.0<br>V| |**IGSS**<br>VGS =±20V, VDS= 0V|±<br>~~|~~|±200<br>nA| |**IDSS**<br>VDS = VDSS<br>100<br>VGS = 0V<br>TJ= 125°C<br>~~|~~|100<br>2 mA<br>~~=~~<br>~~|~~|100<br>μA<br>2 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>~~|~~|6.0<br>~~|~~|6.0<br>mΩ| - High power density ## **Applications** - DC-DC converters - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - Temperature and lighting controls DS98548F(12/08) © 2008 IXYS Corporation, All rights reserved ## **IXFN230N10** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>**gfs**<br>VDS = 10V, ID= 60A, Note 1<br>60 97<br>S<br>**Ciss**<br>19<br>nF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>5600<br>pF<br>**Crss**<br>2750<br>pF<br>**td(on)**<br>40<br>ns<br>**tr**<br>150<br>ns<br>**td(off)**<br>112<br>ns<br>**tf**<br>60<br>ns<br>**Qg(on)**<br>570<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>70<br>nC<br>**Qgd**<br>290<br>nC<br>**RthJC**<br>0.18°C/W<br>**RthCS**<br>0.05<br>°C/W<br> <br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>**IS**<br>VGS = 0V<br>230<br>A<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω (External)<br>**Source-Drain Diode**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>**gfs**<br>VDS = 10V, ID= 60A, Note 1<br>60 97<br>S<br>**Ciss**<br>19<br>nF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>5600<br>pF<br>**Crss**<br>2750<br>pF<br>**td(on)**<br>40<br>ns<br>**tr**<br>150<br>ns<br>**td(off)**<br>112<br>ns<br>**tf**<br>60<br>ns<br>**Qg(on)**<br>570<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>70<br>nC<br>**Qgd**<br>290<br>nC<br>**RthJC**<br>0.18°C/W<br>**RthCS**<br>0.05<br>°C/W<br> <br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>**IS**<br>VGS = 0V<br>230<br>A<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω (External)<br>**Source-Drain Diode**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>**gfs**<br>VDS = 10V, ID= 60A, Note 1<br>60 97<br>S<br>**Ciss**<br>19<br>nF<br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br>5600<br>pF<br>**Crss**<br>2750<br>pF<br>**td(on)**<br>40<br>ns<br>**tr**<br>150<br>ns<br>**td(off)**<br>112<br>ns<br>**tf**<br>60<br>ns<br>**Qg(on)**<br>570<br>nC<br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>70<br>nC<br>**Qgd**<br>290<br>nC<br>**RthJC**<br>0.18°C/W<br>**RthCS**<br>0.05<br>°C/W<br> <br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ. Max.**<br>**IS**<br>VGS = 0V<br>230<br>A<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω (External)<br>**Source-Drain Diode**|**miniBLOC, SOT-227 B**<br>M4 screws (4x) supplied<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>31.50<br>31.88<br>1.240<br>1.255<br>B<br>7.80<br>8.20<br>0.307<br>0.323<br>C<br>4.09<br>4.29<br>0.161<br>0.169<br>D<br>4.09<br>4.29<br>0.161<br>0.169<br>E<br>4.09<br>4.29<br>0.161<br>0.169<br>F<br>14.91<br>15.11<br>0.587<br>0.595<br>G<br>30.12<br>30.30<br>1.186<br>1.193<br>H<br>38.00<br>38.23<br>1.496<br>1.505<br>J<br>11.68<br>12.22<br>0.460<br>0.481<br>K<br>8.92<br>9.60<br>0.351<br>0.378<br>L<br>0.76<br>0.84<br>0.030<br>0.033<br>M<br>12.60<br>12.85<br>0.496<br>0.506<br>N<br>25.15<br>25.42<br>0.990<br>1.001<br>O<br>1.98<br>2.13<br>0.078<br>0.084<br>P<br>4.95<br>5.97<br>0.195<br>0.235<br>Q<br>26.54<br>26.90<br>1.045<br>1.059<br>R<br>3.94<br>4.42<br>0.155<br>0.174<br>S<br>4.72<br>4.85<br>0.186<br>0.191<br>T<br>24.59<br>25.07<br>0.968<br>0.987<br>U<br>-0.05<br>0.1<br>-0.002<br>0.004| |---|---|---|---| |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> ° <br>|||| |(TJ= 25C, unless otherwise specified)<br>**Min. **|**Typ.**|**Max.**|| |**IS**<br>VGS = 0V||230<br>A|| |**ISM**<br>Repetitive, pulse width limited by TJM||920<br>A|| |**VSD**<br>IF= 100A, VGS= 0V, Note 1||1.2<br>V|| |**trr**<br>**QRM**<br> <br>**IRM**<br> <br>IF= 50A, -di/dt = 100A/μs, VR= 50V|<br>1.2<br>9.0|250<br>ns<br>μC<br>A|| |**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|| |---|---|---|---|---|---| |(TJ= 25°C,|unless otherwise specified)|**Min. **|**Typ.**|**Max.**|| |**IS**|VGS = 0V|||230|A| |**ISM**|Repetitive, pulse width limited by TJM|||920|A| |**VSD**|IF= 100A, VGS= 0V, Note 1|||1.2|V| |**trr**||||250|ns| |**QRM**|IF= 50A, -di/dt = 100A/μs, VR= 50V||1.2||μC| |**IRM**|||9.0||A| Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFN230N10** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [251 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>VGS = 10V<br> 9V<br>200 8V<br> 7V<br>160<br>6V<br>120<br>80 5V<br>40<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [263 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>350<br>V GS = 10V<br> 9V<br>300<br> 8V<br> 7V<br>250<br>200 6V<br>150<br>100<br>5V<br>50<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 3. Output Characteristics @ 125ºC** **Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature** **==> picture [527 x 385] intentionally omitted <==** **----- Start of picture text -----**<br> 240 2.2<br>VGS = 10V<br> 9V 2.0 VGS = 10V<br>200 8V<br> 7V<br>1.8<br>160<br>1.6 I D = 230A<br>6V<br>I D = 115A<br>120 1.4<br>5V<br>1.2<br>80<br>1.0<br>40<br>0.8<br>0 0.6<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 115A Value Fig. 6. Maximum Drain Current vs.<br>vs.Drain Current Case Temperature<br>2.0 220<br>200<br>V GS = 10V External Lead Current Limit<br>1.8 180<br>T J = 125ºC 160<br>1.6<br>140<br>120<br>1.4<br>100<br>80<br>1.2<br>60<br>1.0 40<br>TJ = 25ºC 20<br>0.8 0<br>0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Normalized<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2008 IXYS Corporation, All rights reserved IXYS REF: F_230N10(9Y-N17)12-02-08-D **IXFN230N10** **Fig. 7. Input Admittance** **==> picture [252 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>180<br>160<br>140<br>120<br>100<br>TJ = 125ºC<br>80 25ºC<br> - 40ºC<br>60<br>40<br>20<br>0<br>2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode<br>300<br>270<br>240<br>210<br>180<br>150<br>120 T J = 125ºC<br>90 T J = 25ºC<br>60<br>30<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [251 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>f = 1 MHz<br>Ciss<br>10<br>Coss<br>Crss<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - NanoFarads<br>**----- End of picture text -----**<br> **==> picture [262 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>180<br>TJ = - 40ºC<br>160<br>140<br>25ºC<br>120<br>125ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 V DS = 50V<br> I D = 100A<br>8 I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 50 100 150 200 250 300 350 400 450 500 550 600<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [258 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>0.100<br>0.010<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFN230N10** **Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC** ## **Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC** **==> picture [530 x 242] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000 1,000<br>RDS(on) Limit RDS(on) Limit 25µs<br>100µs<br>100µs<br>1ms<br>100 100<br>1ms<br>External-Lead Limit<br>10ms<br>10ms<br>100ms<br>10 10<br>100ms<br>DC<br>DC<br>T J = 150ºC TJ = 150ºC<br>T C = 25ºC T C = 75ºC<br>Single Pulse Single Pulse<br>1 1<br>1 10 100 1 10 100<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> © 2008 IXYS Corporation, All rights reserved IXYS REF: F_230N10(9Y-N17)12-02-08-D
Updated at February 9, 2023
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →