IXFN200N07

## **HiPerFET[TM] Power MOSFETs** 

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 

||||**V**DSS|**I**D25|**R**DS(on)|**R**DS(on)|
|---|---|---|---|---|---|---|
|**IXFN 200 N06**|**IXFN 200 N06**|**IXFN 200 N06**|**60 V**|**200 A**|**6**|**mΩ**|
|**IXFN 200 N07**|**IXFN 200 N07**|**IXFN 200 N07**|**70 V**|**200 A**|**6**|**mΩ**|



**t ≤ 250 ns** rr 

|**Symbol**<br>**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|
|**Not For New Design**<br>**VDSS**<br>TJ= 25°C to 150°C<br>N07<br>70<br>**VDGR**<br>TJ= 25°C to 150°C; RGS= 1 MΩ<br>N06<br>60<br>**VGS**<br>Continuous<br>±20<br>**VGSM**<br>Transient<br>±30<br>**ID25**TC= 25°C; Chip capability                200N06/200N07<br>200<br>**IL(RMS)**<br>Terminal current limit<br>100<br>**IDM**<br>TC<br>= 25°C, pulse width limited by TJM<br>600<br>**IAR**<br>TC<br>= 25°C<br>100<br>**EAR**<br>TC<br>= 25°C<br>30<br>**EAS**<br>TC<br>= 25°C<br>2<br>**dv/dt**<br>IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>5<br>TJ<br>≤150°C, RG= 2Ω<br>**PD**<br>TC= 25°C<br>520<br>**TJ**<br>-55 ... +150<br>**TJM**<br>150<br>**Tstg**<br>-55 ... +150<br>**VISOL**<br>50/60 Hz, RMS<br>t = 1 min<br>-<br>2500<br>IISOL ≤1 mA<br>t = 1 s<br>-<br>3000<br>**Md**<br>Mounting torque<br>1.5/13 <br>Terminal connection torque<br>-<br>1.5/13||V<br>V<br>V<br>V<br>A<br>A<br>A<br>A<br>mJ<br>J<br>V/ns<br>W<br>°C<br>°C<br>°C<br>V~<br>V~<br> Nm/lb.in.<br> Nm/lb.in.|
|**Weight**|30|g|



## **miniBLOC, SOT-227 B (IXFN) E153432** 

**==> picture [69 x 70] intentionally omitted <==**

**----- Start of picture text -----**<br>
S<br>G<br>S<br>D<br>**----- End of picture text -----**<br>


G = Gate D = Drain 

S = Source 

Either Source terminal at miniBLOC can be used as Main or Kelvin Source 

## **Features** 

International standard packages miniBLOC with Aluminium nitride isolation 

Low RDS (on) HDMOS[TM] process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated 

Low package inductance Fast intrinsic Rectifier 

## **Applications** 

|**Weight**<br>30<br>g|**Weight**<br>30<br>g|**Weight**<br>30<br>g|
|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|||
|**VDSS**VGS= 0 V, ID= 1 mA<br>N06<br>60<br>N07<br>70<br>**VGS (th)**VDS= VGS, ID= 8 mA<br>2||V<br>V<br>4<br>V|
|**IGSS**VGS=±20 VDC, VDS= 0||±200<br>nA|
|**IDSS**VDS= 0.8 • VDSSTJ= 25°C<br>VGS= 0 V<br>TJ= 125°C|2|400<br>µA<br>mA|
|**RDS(on)**VGS= 10 V, ID= 0.5 • ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %||6 mΩ|



DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays 

## **Advantages** 

Easy to mount Space savings High power density 

© 2003 IXYS All rights reserved 

DS97533B(02/03) 

**IXFN 200N06  IXFN 200N07** 

**Symbol Test Conditions** 

## **Characteristic Values** 

## **miniBLOC, SOT-227 B** 

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**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|(TJ = 25|°|C, unless otherwise specified)|
|min.|typ.|max.|
|gfs|VDS|= 10 V; ID = 0.5 • ID25, pulse test|60|80|S|
|Ciss|9000|pF|
|Coss|VGS|= 0 V, VDS = 25 V, f = 1 MHz|4000|pF|
|Crss|2400|pF|
|t|30|ns|
|d(on)|
|ttrd(off)|/|VRGSG = 1= 10 V, V|Ω|(External),DS = 0.5 • VDSS, ID = 0.5 • ID25|10060|nsns|M4 screws (4x) supplied|Dim.|Millimeter|Inches|
|tf|60|ns|Min.|Max.|Min.|Max.|
|A|31.50|31.88|1.240|1.255|
|Q|480|nC|B|7.80|8.20|0.307|0.323|
|g(on)|C|4.09|4.29|0.161|0.169|
|Qgs|VGS|= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|60|nC|DE|4.094.09|4.294.29|0.1610.161|0.1690.169|
|Q|240|nC|F|14.91|15.11|0.587|0.595|
|gd|
|G|30.12|30.30|1.186|1.193|
|RthJC|miniBLOC, SOT-227 B|0.24|K/W|HJ|38.0011.68|38.2312.22|1.4960.460|1.5050.481|
|RthCK|miniBLOC, SOT-227 B|0.05|K/W|KL|0.768.92|0.849.60|0.0300.351|0.0330.378|
|M|12.60|12.85|0.496|0.506|
|N|25.15|25.42|0.990|1.001|
|O|1.98|2.13|0.078|0.084|
|P|4.95|5.97|0.195|0.235|
|Q|26.54|26.90|1.045|1.059|
|R|3.94|4.42|0.155|0.174|
|S|4.72|4.85|0.186|0.191|
|Source-Drain Diode|Characteristic Values|T|24.59|25.07|0.968|0.987|
|U|-0.05|0.1|-0.002|0.004|

**----- End of picture text -----**<br>


**Source-Drain Diode Characteristic Values** (TJ = 25 ° C, unless otherwise specified) **Symbol Test Conditions min. typ. max. IS** VGS = 0 V 200 A **ISM** Repetitive; pulse width limited by TJM 600 A **VSD** IF = 100 A, VGS = 0 V, 1.7 V Pulse test, t ≤ 300 µ s, duty cycle d ≤ 2 % **trr** 150 250 ns **QRM** -di/dt = 100 A/IF = 25 A µ s, 0.7 µ C **IRM** VR = 50 V 9 A ——ie 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025