Illustrative purposes only
IXFN180N10
Power MOSFET, HiPerFET, N Channel, 100 V, 180 A, 0.008 ohm, ISOTOP, Module
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 600W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 600W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.008ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 180A
- Drain Source On State Resistance: 0.008ohm
- Gate Source Threshold Voltage Max: 4V
Delivery and price | |
---|---|
Units per pack | 10 |
Price | 32.08 € |
Current stock | N/A |
Lead time | 30 days |