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IXFN170N10
Power MOSFET, N Channel, 100 V, 170 A, 0.01 ohm, ISOTOP, Module
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 600W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 600W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.01ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 170A
- Drain Source On State Resistance: 0.01ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 24.01 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFET** ## **IXFN170N10 IXFK170N10** |**VDSS**|**ID25**|**RDS(on) t**|**trr**| |---|---|---|---| |100V<br>100V|170A<br>170A|10m<br>10m<br>Q<br>Q|200ns<br>200ns| ## Single MOSFET Die **==> picture [157 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 AA (IXFK)<br>PZ><br>) Lf<br>G<br>D D (TAB)<br>S<br>**----- End of picture text -----**<br> Preliminary data |**Symbol**|**Symbol**|**Test Conditions**|**Test Conditions**||**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>**170N10**<br>**170N10**|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>**170N10**<br>**170N10**|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>**170N10**<br>**170N10**||| |---|---|---|---|---|---|---|---|---|---| |**VDSS**<br>**VDGR**|O)|TJ = 25°C to 150°C<br>TJ = 25°C to 150°C|||100<br>100||100<br>100|V<br>V|| |**VGS**||Continuous|||20<br>20<br>V<br>++||||| |**VGSM**||Transient|||30<br>30<br>++|||V|**miniBLOC, SOT-227 B (IXFN)**| |**ID25**<br>**ID125**<br>**IDM**<br>}<br>@)||TC= 25 C<br>TC= 125 C<br>TC= 25 C<br>°<br>°|||170<br>76<br>680<br>®||170<br>NA<br>680|A<br>A|**miniBLOC, SOT-227 B (IXFN)**<br>**E153432**<br>AW| |**IAR**||TC= 25 C|||170||170|A|| |**EAR**<br>**dv/dt**||TC = 25 C<br>IS<br>IDM, di/dt 100 A/ s, VDD VDSS<br>TJ<br>150 C, RG= 2<br><<br><<br>y<br><<br><<br>°<br>Q|||60<br>5||60<br>mJ<br>5 V/ns||Ss| |**PD**||TC = 25 C|||560||600 W||G = Gate| |**TJ**|||||-55 ... +150|-55 ... +150|-55 ... +150 C||S = Source| |**TJM**||||||150||C|Either Source terminal at miniBLOC can be used| |**Tstg**|||||-55 ... +150|-55 ... +150|-55 ... +150 C||as Main or Kelvin Source| |**TL**||1.6 mm (0.063 in) from case for 10 s|||300||N/A|C|**Features**| |**VISOL**||50/60 Hz, RMS<br>t = 1 min<br>IISOL1 mA<br>t = 1 s<br><|||N/A<br>N/A||2500<br>3000|V~<br>V~|International standard packages<br>Encapsulating<br>UL<br>e| ||||||||||UL| |**Md**||Mounting torque|||0.9/6||1.5/13 Nm/lb.in.||miniBLOC| |||Terminal connection torque|Terminal connection torque||N/A||1.5/13 Nm/lb.in.||isolation| |**Weight**|||||10||30|g|Low R<br>Rugged polysilicon gate cell structure| **==> picture [152 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> miniBLOC, SOT-227 B (IXFN)<br> E153432<br>S<br>AW G “=,<br>MYA<br>Ss ey)<br>S<br>5 iS D<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br> Either Source terminal at miniBLOC can be used as Main or Kelvin Source ## **Features** International standard packages Encapsulating epoxy meets UL94V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOS[TM] process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier |**Symbol**|**Test Conditions**||**Characteristic Values**|| |---|---|---|---|---| |(TJ= 25|C, unless otherwise specified)|**Min.**<br>**Typ. Max.**|**Typ. Max.**|| |**VDSS**|VGS= 0 V, ID= 3mA<br>VDSStemperature coefficient|100|V<br>0.077<br>%/K|**Applications**| |**VGS(th)**|VDS= VGS, ID= 8mA<br>VGS(th)temperature coefficient|2|4<br>V<br>-0.183<br>%/K|| |**IGSS**<br>**IDSS**|VGS=<br>20V, VGS= 0V<br>VDS= 0.8 • VDSSV<br>VGS= 0 V|TJ= 25 C<br>TJ= 125 C|200<br>nA<br>400<br>A<br>2<br>mA|| |**RDS(on)**|**Advantages**<br>VGS= 10 V, ID= 0.5 • ID25<br>10<br>m<br>Pulse test, t 300 ms,<br>duty cycle d 2 %<br>Q<br><e<br><<br>e|||| ## **Applications** DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays ## **Advantages** Easy to mount Space savings High power density 97505D (7/00) IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1 - 4 **IXFK170N10 IXFN170N10** |**Symbol**<br>(TJ= 25|**Test Conditions**<br>**Characteristic Values**<br> C, unless otherwise specified)|**Test Conditions**<br>**Characteristic Values**<br> C, unless otherwise specified)|**Test Conditions**<br>**Characteristic Values**<br> C, unless otherwise specified)|**Test Conditions**<br>**Characteristic Values**<br> C, unless otherwise specified)|**Characteristic Values**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**TO-264 AA Outline**|**Characteristic Values**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**TO-264 AA Outline**|**Characteristic Values**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**TO-264 AA Outline**|**Characteristic Values**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**gfs**|VDS|= 10 V; I|= 10 V; ID= 0.5 • I|= 0.5 • ID25, pulse test||65||S|||||||| |**Ciss**||||||10,300||pF|||||||| |**Coss**|VGS|= 0 V, VDS= 25 V, f = 1 MHz||= 25 V, f = 1 MHz||2,200||pF|||||||| |**Crss**||||||1,200||pF|||||||| |**td(on)**||||||40||ns|||||||| |**tr**<br>**td(off)**<br>**tf**|/|VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG<br>= 1<br>(External),<br>Q||||90<br>158<br>79||ns<br>ns<br>ns||Dim.||Millimeter<br>Inches<br>pog~~e~~|||| |**Qg(on)**|)|||||515||nC||A||Min.<br>4.82|Max.<br>5.13|Min.<br>.190|Max.<br>.202| |**Qgs**||VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||||62||nC||A1<br>A2||2.54<br>2.00|2.89<br>2.10|.100<br>.079|.114<br>.083| |**Qgd**||||||276||nC||b<br>b1||1.12<br>2.39|1.42<br>2.69|.044<br>.094|.056<br>.106| |||||||||||b2||2.90|3.09|.114|.122| |**RthJC**|TO-264 AA||||||0.22|K/W||c<br>D||0.53<br>25.91|0.83<br>26.16|.021<br>1.020|.033<br>1.030| |**RthCK**|TO-264 AA|||||0.15||K/W||E<br>e||19.81<br>5.46 BSC|19.96<br>5.46 BSC|.780<br>.215 BSC|.786<br>.215 BSC| |**RthJC**|miniBLOC, SOT-227 B||||||0.21|K/W||J<br>K||0.00<br>0.00|0.25<br>0.25|.000<br>.000|.010<br>.010| |**RthCK**|miniBLOC, SOT-227 B|||||0.05||K/W||L<br>L1||20.32<br>2.29|20.83<br>2.59|.800<br>.090|.820<br>.102| |||||||||||P||3.17|3.66|.125|.144| |||||||||||Q||6.07|6.27|.239|.247| |||||||||||Q1||8.38|8.69|.330|.342| |||||||||||R||3.81|4.32|.150|.170| |||||||||||R1||1.78|2.29|.070|.090| |**Source-Drain Diode**||**Source-Drain Diode**||||||||S<br>T||6.04<br>1.57|6.30<br>1.83|.238<br>.062|.248<br>.072| |**Source-Drain Diode**|**Source-Drain Diode**|||||||||S<br>T|6.04<br>1.57|6.30<br>1.83||.238<br>.248<br>.062<br>.072| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |(TJ= 25 C, unless otherwise specified)|||**Characteristic Values**|||||||||||| |**Symbol**|**Test Conditions**||**Min.**|**Typ.**||**Max.**||||||||| ||||||||**miniBLOC, SOT-227 B**|**miniBLOC, SOT-227 B**||||||**miniBLOC, SOT-227 B**| |**IS**|VGS = 0|||||170|A|||||||| |**ISM**|Repetitive;|||||680|A|||||||| ||pulse width limited by TJM|||||||||||||| |**VSD**|IF= 100 A, VGS= 0 V,|||||1.5|V|||lerdt'|||ten (en||| ||Pulse test, t 300<br>s, duty cycle d 2 %|||||||||||||| |**t rr**||||175|||ns|||||||| |**QRM**|IF= 50 A, -di/dt = 100 A/ s, VR= 100 V||= 100 V|1.1|||C|||||||| |**IRM**||||12.6|||A|||||||t| |||||||||||M4 screws (4x) supplied|M4 screws (4x) supplied|M4 screws (4x) supplied||| |Notes:|1.RGS= 1 M<br>2.Pulse width limited by TJM.<br>3.Chip capability<br>4.Current limited by external leads||||||||Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>31.50<br>31.88<br>1.240<br>1.255<br>B<br>7.80<br>8.20<br>0.307<br>0.323<br>C<br>4.09<br>4.29<br>0.161<br>0.169<br>D<br>4.09<br>4.29<br>0.161<br>0.169<br>E<br>4.09<br>4.29<br>0.161<br>0.169<br>F<br>14.91<br>15.11<br>0.587<br>0.595<br>G<br>30.12<br>30.30<br>1.186<br>1.193<br>H<br>38.00<br>38.23<br>1.496<br>1.505<br>J<br>11.68<br>12.22<br>0.460<br>0.481<br>K<br>8.92<br>9.60<br>0.351<br>0.378<br>L<br>0.76<br>0.84<br>0.030<br>0.033<br>M<br>12.60<br>12.85<br>0.496<br>0.506<br>N<br>25.15<br>25.42<br>0.990<br>1.001<br>O<br>1.98<br>2.13<br>0.078<br>0.084<br>P<br>4.95<br>5.97<br>0.195<br>0.235<br>Q<br>26.54<br>26.90<br>1.045<br>1.059<br>R<br>3.94<br>4.42<br>0.155<br>0.174<br>S<br>4.72<br>4.85<br>0.186<br>0.191<br>T<br>24.59<br>25.07<br>0.968<br>0.987<br>U<br>-0.05<br>0.1<br>-0.002<br>0.004<br>=|||||| |||||||||||||||| |© 2000 IXYS All rights reserved||IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:<br>4,835,592<br>4,881,106<br>5,017,508||||IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:<br>5,049,961<br>5,187,117<br>5,486,715||||||||| |||4,850,072|4,931,844|5,034,796||5,063,307|5,237,481||5,381,025|||||| © 2000 IXYS All rights reserved 2 - 4 **IXFK170N10** **IXFN170N10** Figure 1. Output Characteristics at 25[O] C Figure 2. Output Characteristics at 125[O] C **==> picture [485 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>250 TJ=25 [O] C 9VVGS=10V 250 TJ=125 [O] C V 9VGS=10V 8V<br> 8V<br> 7V<br>200 200<br>7V<br>150 150<br>6V 6V<br>100 100<br>5V 5V<br>50 50<br>0 0<br>0 2 4 6 8 10 0 2 4 6 8 10<br>VDS - Volts VDS - Volts<br>Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID Figure 4. RDS(on) normalized to 0.5 ID25DS(on) normalized to 0.5 ID25 normalized to 0.5 ID25D25 value vs. TJ<br>1.8 2.2<br>VGS = 10V TJ = 125 [O] C VGS=10VGS=10V=10V<br>1.6 2.0<br>1.4 1.8<br>1.2 TJ = 25 [O] C 1.6 ID=170AD=170A=170A<br>ID=85AD=85A=85A<br>1.0 1.4<br>0.8 1.2<br>0.6 1.0<br>0 50 100 150 200 250 300 25 50 75 100 125 150<br>ID - Amperes TJ - Degrees CJ - Degrees C - Degrees C<br>Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves<br>200 100<br>175<br>80<br>150<br>125<br>60<br>100 TJ = 125 [o] C<br>75 40<br>TJ = 25 [o] C<br>50<br>20<br>25<br>0 0<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10<br>TC - Degrees C VGS - Volts<br> - Amperes - Amperes<br>ID ID<br> - Normalized - Normalized<br>DS(ON) DS(ON)<br>R R<br> - AmperesID - AmperesID<br>**----- End of picture text -----**<br> Figure 4. RDS(on) normalized to 0.5 ID25DS(on) normalized to 0.5 ID25 normalized to 0.5 ID25D25 value vs. TJ **==> picture [217 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>VGS=10VGS=10V=10V<br>2.0<br>1.8<br>ID=170AD=170A=170A<br>1.6<br>ID=85AD=85A=85A<br>1.4<br>1.2<br>1.0<br>25 50 75 100 125 150<br>TJ - Degrees CJ - Degrees C - Degrees C<br> - Normalized<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 3 - 4 **IXFK170N10** **IXFN170N10** Figure 7. Gate Charge Figure 8. Capacitance Curves **==> picture [493 x 581] intentionally omitted <==** **----- Start of picture text -----**<br> 12 18000<br>Vds= 50V<br>10 ID= 85AD= 85A= 85A 15000<br> IG=10mAG=10mA=10mA f = 1MHz<br>8 12000<br>Ciss<br>6 9000<br>4 6000<br>Coss<br>2 3000<br>Crss<br>0 0<br>0 100 200 300 400 500 600 0 10 20 30 40<br>Gate Charge - nC VDS - VoltsDS - Volts - Volts<br>Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Forward Bias Safe Operating Area<br>300<br>170<br>250 1 00<br>200<br>10<br>150 TJ = 125J = 125= 125 [[O]] C ms<br>1 0 100<br>ms<br>100 TC = 25C = 25 = 25 [[O]] C<br>TJ = 25J = 25= 25 [[O]] C DC<br>50<br>0 1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>1 1 0 1 00<br>VSD - VoltsSD - Volts - Volts VDS - VoltsDS - Volts- Volts<br>Figure 11. Transient Thermal Resistance<br>0.40<br>0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>Pulse Width - Seconds<br> - Volts<br>GS<br>V<br>Capacitance - pF<br> - Amperes<br>D IDD<br> - K/W<br>JC<br>R(th)<br>**----- End of picture text -----**<br> **==> picture [502 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 12 18000<br>Vds= 50V<br>10 ID= 85AD= 85A= 85A 15000<br> IG=10mAG=10mA=10mA f = 1MHz<br>8 12000<br>Ciss<br>6 9000<br>4 6000<br>Coss<br>2 3000<br>Crss<br>0 0<br>0 100 200 300 400 500 600 0 10 20 30 40<br>Gate Charge - nC VDS - VoltsDS - Volts - Volts<br>Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Forward Bias Safe Operating Area<br>300<br>170<br>250 1 00<br>1 ms<br>200<br>10<br>150 TJ = 125J = 125= 125 [[O]] C ms<br>1 0 100<br>ms<br>100 TC = 25C = 25 = 25 [[O]] C<br>TJ = 25J = 25= 25 [[O]] C<br>DC<br>50<br>0 1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>1 1 0 1 00<br>VSD - VoltsSD - Volts - Volts VDS - VoltsDS - Volts- Volts<br> - Volts<br>GS<br>V<br>Capacitance - pF<br> - Amperes<br> - AmperesID IDD<br>**----- End of picture text -----**<br> Figure10. Forward Bias Safe Operating Area © 2000 IXYS All rights reserved 4 - 4
Updated at February 9, 2023
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