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IXFN120N20
Power MOSFET, N Channel, 200 V, 120 A, 0.017 ohm, ISOTOP, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 600W
- Transistor Mounting: Module
- Transistor Polarity: N Channel
- Power Dissipation Pd: 600W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.017ohm
- Transistor Case Style: ISOTOP
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 0.017ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 20.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **IXFN 120N20** ## **HiPerFET[TM] Power MOSFETs** ## Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr |**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---| |**VDSS**<br>**VDGR**<br>**VGS**<br>**VGSM**<br>a<br>a|TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous<br>Transient<br>a<br>a|200<br>200<br>±20<br>±30<br>a<br>a|V<br>V<br>V<br>V<br>a<br>a| |**ID25**|TC = 25°C|120|A| |**IDM**|TC = 25°C, pulse width limited by TJM|480|A| |**IAR**|TC = 25°C|120|A| |**EAR**<br>**EAS**|TC = 25°C<br>TC = 25°C|64<br>3|mJ<br>J| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS<br>TJ ≤150°C, RG= 2Ω|5|V/ns| |**PD**|TC = 25°C|600|W| |**TJ**||-55 ... +150|°C| |**TJM**<br>**Tstg**||150<br>-55 ... +150|°C<br>°C| |**TL**<br>**VISOL**|1.6 mm (0.063 in.) from case for 10 s<br>50/60 Hz, RMS<br>t = 1 min<br>IISOL ≤1 mA<br>t = 1 s|-<br>2500<br>3000|°C<br>V~<br>V~| |**Md**|Mounting torque|1.5/13 Nm/lb.in.|1.5/13 Nm/lb.in.| |**Weight**|Terminal connection torque|1.5/13 <br>30|Nm/lb.in.<br>g| **V = 200 V DSS I = 120 A D25 R = 17 m Ω DS(on)** ## **t ≤ 250 ns** rr **miniBLOC, SOT-227 B (IXFN) E153432** S **==> picture [69 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source ## **Features** - Encapsulating epoxy meets UL 94 V-0, flammability classification - International standard package - miniBLOC, with Aluminium nitride isolation - Low RDS (on) HDMOS[TM] process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - Fast intrinsic Rectifier ## **Applications** **Symbol Test Conditions Characteristic Values** (TJ = 25°C, unless otherwise specified) **min. typ. max. VDSS** VGS = 0 V, ID = 3mA 200 V **VGS(th)** VDS = VGS, ID = 8mA 2 || 4 V **IGSS** VGS = ±20 V, VDS = 0 ±200 nA = **IDSS** VDS = VDSS TJ = 25°C 100 µA VGS = 0 V TJ = 125°C = 2 mA **RDS(on)** VGS = 10 V, ID = 0.5 • ID25 17 mΩ Note 1 ~ - DC-DC converters - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - Temperature and lighting controls - Low voltage relays ## **Advantages** - Easy to mount - Space savings - High power density © 2003 IXYS All rights reserved DS96538D(03/03) **IXFN 120N20** ## **Symbol Test Conditions** ## **Characteristic Values** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**||| |**gfs**<br>VDS = 10 V; ID= 0.5 • ID25<br>Note 1<br>40<br>|77<br>|S<br>| |**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|9100<br>2200<br>1000|pF<br>pF<br>pF| |**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**td(off)**<br>RG= 1Ω(External),<br>**tf**|42<br>55<br>110<br>40|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**Qgd**|360<br>50<br>160|nC<br>nC<br>nC| |**RthJC**||0.22<br>K/W| |**RthCK**|0.05|K/W| |**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br>|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br>|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br>| |---|---|---| |**Symbol**<br>**Test Conditions**<br>**min.**|**typ.**|**max.**| |**IS**<br>VGS = 0 V||120<br>A| |**ISM**<br>Repetitive;<br>pulse width limited by TJM||480<br>A| |**VSD**<br>IF= IS, VGS= 0 V, Note 1||1.5<br>V| |**trr**<br>**QRM**<br>**IRM**<br>IF= 50A,-di/dt = 100 A/µs, VR= 100 V|1.1<br>13|250<br>ns<br>µC<br>A| |**miniBLOC, SOT-227**|**miniBLOC, SOT-227**|**miniBLOC, SOT-227**|**miniBLOC, SOT-227**|**B**|||| |---|---|---|---|---|---|---|---| |M4 screws (4x) supplied|||||||| ||Dim.|Millimeter|||Inches||| |||Min.|Max.|Min.||Max.|| ||A|31.50|31.88|1.240||1.255|| ||B|7.80|8.20|0.307||0.323|| ||C|4.09|4.29|0.161||0.169|| ||D|4.09|4.29|0.161||0.169|| ||E|4.09|4.29|0.161||0.169|| ||F|14.91|15.11|0.587||0.595|| ||G|30.12|30.30|1.186||1.193|| ||H|38.00|38.23|1.496||1.505|| ||J|11.68|12.22|0.460||0.481|| ||K|8.92|9.60|0.351||0.378|| ||L|0.76|0.84|0.030||0.033|| ||M|12.60|12.85|0.496||0.506|| ||N|25.15|25.42|0.990||1.001|| ||O|1.98|2.13|0.078||0.084|| ||P|4.95|5.97|0.195||0.235|| ||Q|26.54|26.90|1.045||1.059|| ||R|3.94|4.42|0.155||0.174|| ||S|4.72|4.85|0.186||0.191|| ||T|24.59|25.07|0.968||0.987|| ||U|-0.05|0.1|-0.002||0.004|| ||||||||| Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 **IXFN 120N20** **==> picture [235 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25 Deg. C<br>120<br>VGS = 1 0V<br>100 9V<br> 8V<br>80 7V 6V<br>60<br>5V<br>40<br>20<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [235 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics<br>@ 125 Deg. C<br>120<br>VGS = 1 0V<br>100 9V<br> 8V<br> 7V 6V<br>80<br>60<br>40<br>5V<br>20<br>0<br>0 1 2 3 4 5<br>V DS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [235 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 5. RDS(on) Normalized to ID25<br> Value vs. ID<br>2.2<br>VGS = 1 0V<br>1.9<br>TJ = 1 25ºC<br>1.6<br>1.3<br>TJ = 25ºC<br>1<br>0.7<br>0 30 60 90 120 150 180<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25 deg. C** **==> picture [197 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>150 9V VGS = 1 0V 7V<br> 8V<br>120<br>6V<br>90<br>60<br>5V<br>30<br>0<br>0 1 2 3 4 5<br>V DS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [234 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID25 Value vs.<br>Junction Temperature<br>2.5<br>2.2 VGS = 1 0V<br>1.9<br>1.6<br>ID = 1 20A<br>1.3<br>ID = 60A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [234 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6. Drain Current vs. Case<br>Temperature<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2003 IXYS All rights reserved **IXFN 120N20** **Fig. 7. Input Admittance** **==> picture [205 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>120<br>90<br>60 TJ = -40ºC<br> 25ºC<br> 1 25ºC<br>30<br>0<br>3 3.5 4 4.5 5 5.5 6 6.5<br>V GS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [205 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>160<br>120<br>80 TJ = 1 25ºC<br>TJ = 25ºC<br>40<br>0<br>0.4 0.55 0.7 0.85 1 1.15 1.3<br>V SD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [204 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Ciss<br>f = 1 M Hz<br>Coss<br>1000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [206 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100 TJ = 25ºC<br>80<br>60<br>40<br>20<br>0<br>0 30 60 90 120 150 180<br>ID - Amperes<br> - Siemens<br>fs<br>G<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [201 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>VDS = 1 00V<br>8 ID = 60A<br>IG = 1 0mA<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300<br>QG - nanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [234 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 12. Maximum Transient Thermal<br>Resistance<br>1<br>0.1<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>(ºC/W)<br> -<br>(th)JC<br>R<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Updated at February 9, 2023
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