IXFL100N50P

Power MOSFET, N Channel, 500 V, 70 A, 0.052 ohm, ISOPLUS-264, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Pow
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 625W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: ISOPLUS-264
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 70A
Drain Source On State Resistance: 0.052ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	300
Price	19.6 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar[TM ] HiPerFET[TM] Power MOSFET** 

## **(Electrically Isolated Tab)** 

## **IXFL100N50P** 

**V =     500V DSS I =     68A D25 R  52m  DS(on) t  200ns rr** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

## **ISOPLUS264** 

|**Symbol**|**Test Conditions**||**Maximum Ratings**||
|---|---|---|---|---|
|~~oe~~|||||
|**VDSS**|TJ = 25C to 150C||500|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M||500|V|
|**VGSS**|Continuous||30|V|
|**VGSM**|Transient||40|V|
|**ID25**|TC = 25C||68|A|
|**IDM**|TC = 25C,  Pulse Width Limited by T|C,  Pulse Width Limited by TJM|250|A|
|**IA**|TC = 25C||100|A|
|**EAS**|TC = 25C||5|J|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C||20|V/ns|
|**PD**|TC = 25C||625|W|
|**TJ**|||-55 ... +150|C|
|**TJM**|||150|C|
|**Tstg**|||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300||Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|Plastic Body for 10s<br>260                    °C||260                    °C|260                    °C|
|**FC**|Mounting Force                                              40..120 / 9..27|Mounting Force                                              40..120 / 9..27|Mounting Force                                              40..120 / 9..27|N/lb.|
|**VISOL**|50/60 Hz, RMS     t = 1 min|50/60 Hz, RMS     t = 1 min|2500|V~|
||IISOL 1 mA|t = 1 s|3000 V~|V~|
|**Weight**|||8|g|



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G<br>D Isolated Tab<br>S<br>**----- End of picture text -----**<br>


- G =  Gate D     = Drain S =  Source 

## **Features** 

- Silicon Chip on Direct-Copper-Bond Substrate 

- High Power Dissipation - Isolated Mounting Surface 

- 2500V~ Electrical Isolation 

- Avalanche Rated 

- Low Package Inductance 

- Fast Intrinsic Rectifier 

- Low RDS(on) and QG 

## **Advantages** 

- Easy to Mount 

- Space Savings 

|**Symbol**<br>(TJ= 25C Unless Otherwise Specified)|**Test Conditions**<br>C Unless Otherwise Specified)|C Unless Otherwise Specified)|**Characteristic Values**<br>C Unless Otherwise Specified)**Min.        Typ.        Max.**||**AApplications**|
|---|---|---|---|---|---|
|**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS = 0V, ID= 3mA                                        500<br>VDS = VGS, ID= 8mA                            3.0                     5.0    V<br>VGS =30V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T<br>VGS = 10V, ID= 50A, Note 1|= 3mA                                        500<br>= 8mA                            3.0                     5.0    V<br>TJ= 125C|= 3mA                                        500<br>= 8mA                            3.0                     5.0    V<br>200  nA<br>25<br>2   mA<br>52  m<br>~~| |~~<br>~~|—~~<br>~~||~~|V<br>= 8mA                            3.0                     5.0    V<br>200  nA<br>A<br>2   mA<br>52  m|DC-DC Converters<br>Battery Chargers<br>Switch-Mode and Resonant-Mode<br>Power Supplies<br>AC Motor Control<br>High Speed Power Switching<br>Appliccation|



DS99563F(8/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXFL100N50P** 

**Symbol Test Conditions** 

## **Characteristic Values** 

|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**<br>~~—~~|**Min.        Typ.        Max.**|
|---|---|---|
|**gfs**<br>VDS= 20V, ID= 50A, Note 1                            50              80|= 50A, Note 1                            50              80<br>~~—~~|S|
|**Ciss**<br>20<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>1700<br>**Crss**<br>140|20<br>1700<br>140|nF<br>pF<br>pF|
|**td(on)**<br> <br>**t**r<br>29<br>**td(off)**<br>110<br>**t**f<br>26<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 50A<br>RG= 1(External)|36<br>29<br>110<br>26|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>240<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 50A<br>96<br>**Qgd**<br>78|240<br>96<br>78|nC<br>nC<br>nC|
|**RthJC**<br>0.20<br>**RthCS**<br>0.15|0.20<br>0.15|0.20C/W<br>C/W|



**ISOPLUS264 (IXFL) OUTLINE** 

|1     =  Gate|1     =  Gate|1     =  Gate|
|---|---|---|
|2,4  =  Drain<br>3     =  Source|2,4  =  Drain<br>3     =  Source|2,4  =  Drain<br>3     =  Source|



## **Source-Drain Diode** 

|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**IS**<br>VGS= 0V|100     A|100     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|250     A|250     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5     V|1.5     V|
|**trr**<br>200   ns<br>**QRM**<br>0.6<br>**IRM**6.0<br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|200   ns<br>0.6<br>6.0|200   ns<br>C<br> A|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFL100N50P** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>100<br>V GS = 10V<br>90<br>          8V<br>80<br>7V<br>70<br>60<br>50<br>40<br>30 6V<br>20<br>10<br>5V<br>0<br>0 1 2 3 4 5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>220<br>V GS = 10V<br>200<br>          9V<br>180<br>160 8V<br>140<br>120<br>100 7V<br>80<br>60<br>40<br>20 6V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 50A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>100 3.2<br>90 V GS = 10V  V GS = 10V<br>2.8<br>80 7V<br>70 2.4<br>60 I D = 100A<br>2.0<br>50<br>6V I D = 50A<br>1.6<br>40<br>30 1.2<br>20<br>5V 0.8<br>10<br>0 0.4<br>0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 50A Value vs.<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>Drain Current<br>3.2 80<br>VGS = 10V  70<br>2.8<br>TJ = 125 [o] C 60<br>2.4<br>50<br>2.0 40<br>30<br>1.6<br>TJ = 25 [o] C 20<br>1.2<br>10<br>0.8 0<br>0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXFL100N50P** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>160 160<br>TJ = - 40 [o] C<br>140 140<br>120 120<br>25 [o] C<br>100 100<br>80 80 125 [o] C<br>TJ = 125 [o] C<br>          25 [o] C<br>60 60<br>- 40 [o] C<br>40 40<br>20 20<br>0 0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 100 120 140 160 180<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>100<br>TJ = 125 [o] C<br>50<br>TJ  = 25 [o] C<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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Fig. 10. Gate Charge<br>**----- End of picture text -----**<br>


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10<br>9  VDS = 250V<br> I  D  = 50A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 50 100 150 200 250<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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100,000 1000<br>f = 1 MHz<br>Ciss<br>RDS(on) Limit<br>10,000 100 100μs<br>C oss 1ms<br>1,000 10<br>10ms<br>T J  = 150 [o] C<br>DC<br>TC = 25 [o] C<br>C rss Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

## **IXFL100N50P** 

**Fig. 13. Maximum Transient Thermal Impedance** 

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1<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_100N50P (9S-745) 2-08-06-A 

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Updated at April 27, 2026

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