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IXFK98N50P3
Power MOSFET, N Channel, 500 V, 98 A, 0.05 ohm, TO-264AA, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Pow
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.3kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264AA
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 98A
- Drain Source On State Resistance: 0.05ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 10.14 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM ] HiPerFET[TM] Power MOSFET** ## **IXFK98N50P3 IXFX98N50P3** |N-Channel Enhancement Mode|N-Channel Enhancement Mode||| |---|---|---|---| |Avalanche Rated<br>Fast Intrinsic Diode|||| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oo~~|||| |**VDSS**|TJ = 25C to 150C|500|V| |**VDGR**|TJ = 25C to 150C, RGS= 1M|500|V| |**VGSS**|Continuous|30|V| |**VGSM**|Transient|40|V| |**ID25**|TC = 25C|98|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|245|A| |**IA**|TC = 25C|49|A| |**EAS**|TC = 25C|4.5|J| |**PD**|TC = 25C|1300|W| |**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C 35 V/ns|150°C 35 V/ns|150°C 35 V/ns| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**<br>**TL**|Maximum Lead Temperature for Soldering 300|-55 ... +150<br>Maximum Lead Temperature for Soldering 300|C<br>°C| |**TSOLD**<br>**Md**<br>**FC**|Plastic Body for 10s<br>260 °C<br>Mounting Torque (TO-264)<br>Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|260 °C<br>1.13/10<br>Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|260 °C<br>Nm/lb.in<br>Mounting Force (PLUS247) 20..120 /4.5..27 N/lb| |**Weight**|TO-264<br>PLUS247|10<br>6|g<br>6g| **V = 500V DSS I = 98A D25 R 50m DS(on) t 250ns rr** **==> picture [113 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 (IXFK)<br>G<br>D<br>S<br>Tab<br>PLUS247 (IXFX)<br>G<br>D<br>S Tab<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** - Dynamic dv/dt Rating - Avalanche Rated - Fast Intrinsic Diode - Low QG - Low R DS(on) - Low Drain-to-Tab Capacitance - Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 3mA 500||V| |**VGS(th)**<br>VDS = VGS, ID= 8mA 3.0|5.0|5.0<br>V| |**IGSS**<br>VGS =30V, VDS= 0V||200<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>1.5 mA|25<br>1.5 mA|25<br>A<br>1.5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|50 m|50 m| - Easy to Mount - Space Savings ## **Applications** - DC-DC Converters - Battery Chargers - Switch-Mode and Resonant-Mode - Power Supplies - Uninterrupted Power Supplies - AC Motor Drives - High Speed Power Switching - Applications © 2014 IXYS CORPORATION, All Rights Reserved DS100317B(9/14) **IXFK98N50P3 IXFX98N50P3** ||**IXFK98N50P3**<br>**IXFX98N50P3**| |---|---| |IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br>Note 1. Pulse test, t300s, duty cycle, d2%.<br>**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max.**<br>**IS**<br>VGS = 0V<br>98<br>A<br>**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>390 A<br>**VSD**<br>IF= IS, VGS= 0V, Note 1<br>1.5<br>V<br>**trr**<br>250 ns<br>**QRM**<br>1.6<br>μC<br>**IRM**<br>15.4<br>A<br>IF= 49A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V<br>**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**<br>**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 55 90<br>S<br>**Ciss**<br>12.9<br>nF<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>1300<br>pF<br>**Crss**<br>11<br>pF<br>**RGi**Gate Input Resistance 1.2<br>**td(on)**<br>48<br>ns<br>**tr**<br>21<br>ns<br>**td(off)**<br>90<br>ns<br>**tf**<br>12<br>ns<br>**Qg(on)**<br>200<br>nC<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>63<br>nC<br>**Qgd**<br>62<br>nC<br>**RthJC**<br>0.096C/W<br>**RthCS**<br>0.15C/W<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)<br>**PLUS 247**<br>**TO-264 AA Outline**<br>||Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>4 - Drain<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.82<br>5.13<br>.190<br>.202<br>A1<br>2.54<br>2.89<br>.100<br>.114<br>A2<br>2.00<br>2.10<br>.079<br>.083<br>b<br>1.12<br>1.42<br>.044<br>.056<br>b1<br>2.39<br>2.69<br>.094<br>.106<br>b2<br>2.90<br>3.09<br>.114<br>.122<br>c<br>0.53<br>0.83<br>.021<br>.033<br>D<br>25.91<br>26.16<br>1.020<br>1.030<br>E<br>19.81<br>19.96<br>.780<br>.786<br>e<br>5.46 BSC<br>.215 BSC<br>J<br>0.00<br>0.25<br>.000<br>.010<br>K<br>0.00<br>0.25<br>.000<br>.010<br>L<br>20.32<br>20.83<br>.800<br>.820<br>L1<br>2.29<br>2.59<br>.090<br>.102<br>P<br>3.17<br>3.66<br>.125<br>.144<br>Q<br>6.07<br>6.27<br>.239<br>.247<br>Q1<br>8.38<br>8.69<br>.330<br>.342<br>R<br>3.81<br>4.32<br>.150<br>.170<br>R1<br>1.78<br>2.29<br>.070<br>.090<br>S<br>6.04<br>6.30<br>.238<br>.248<br>T<br>1.57<br>1.83<br>.062<br>.072<br>Dim.<br>**TO-264 AA Outline**<br>~~;~~| ||Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>**PLUS 247TM Outline**<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.83<br>5.21<br>.190<br>.205<br>A1<br>2.29<br>2.54<br>.090<br>.100<br>A2<br>1.91<br>2.16<br>.075<br>.085<br>b<br>1.14<br>1.40<br>.045<br>.055<br>b1<br>1.91<br>2.13<br>.075<br>.084<br>b2<br>2.92<br>3.12<br>.115<br>.123<br>C<br>0.61<br>0.80<br>.024<br>.031<br>D<br>20.80<br>21.34<br>.819<br>.840<br>E<br>15.75<br>16.13<br>.620<br>.635<br>e<br>5.45 BSC<br>.215 BSC<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>3.81<br>4.32<br>.150<br>.170<br>Q<br>5.59<br>6.20<br>.220 0.244<br>R<br>4.32<br>4.83<br>.170<br>.190<br>~~l~~l~~.~~| Note 1. Pulse test, t 300s, duty cycle, d 2%. |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085| |b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123| |C<br>D<br>E|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635| |e<br>L<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170| |Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190| - IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFK98N50P3 IXFX98N50P3** **Fig. 1. Output Characteristics @ TJ = 25ºC** **==> picture [252 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>V GS = 10V<br>90<br>80 7V<br>70<br>60<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 1 2 3 4 5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **==> picture [257 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>V GS = 10V<br>90 7V<br>80<br>70<br>60<br>6V<br>50<br>40<br>30<br>20<br>5V<br>10<br>0<br>0 2 4 6 8 10 12<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 49A Value vs.<br>Drain Current<br>3.4<br>V GS = 10V<br>3.0<br>2.6 TJ = 125ºC<br>2.2<br>1.8<br>1.4<br>1.0 TJ = 25ºC<br>0.6<br>0 20 40 60 80 100 120 140 160 180 200<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [264 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>VGS = 10V<br>180<br>8V<br>160<br>140<br>120 7V<br>100<br>80<br>60<br>40 6V<br>20<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 49A Value vs.<br>Junction Temperature<br>3.4<br>VGS = 10V<br>3.0<br>2.6<br>I D = 98A<br>2.2<br>I D = 49A<br>1.8<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved **IXFK98N50P3 IXFX98N50P3** **==> picture [264 x 426] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>140<br>120<br>TJ = 125ºC<br> 25ºC<br>100 - 40ºC<br>80<br>60<br>40<br>20<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>100<br>TJ = 125ºC<br>50 TJ = 25ºC<br>0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [264 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>160<br>TJ = - 40ºC<br>140<br>120<br>25ºC<br>100<br>125ºC<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [252 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br> I D = 49A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [258 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000<br>f = 1 MHz<br>C iss<br>10,000<br>1,000<br>Coss<br>100<br>10<br>Crss<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [254 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>RDS(on) Limit<br>100<br>100µs<br>10<br>1<br>1ms<br>0.1 TJ = 150ºC<br>TC = 25ºC 10ms<br>Single Pulse<br>0.01<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFK98N50P3 IXFX98N50P3** **Fig. 13. Maximum Transient Thermal Impedance** 1 **==> picture [523 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.2<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_98N50P3(W9-W38) 9-25-14 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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