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IXFK80N50Q3
Power MOSFET, Q3-Class, N Channel, 500 V, 80 A, 0.065 ohm, TO-264, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Po
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HiPerFET
- Qualification: -
- Power Dissipation: 1.25kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 80A
- Drain Source On State Resistance: 0.065ohm
- Gate Source Threshold Voltage Max: 6.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 18.17 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Q3-Class IXFK80N50Q3 HiperFET[[TM]] IXFX80N50Q3 Power MOSFET** **==> picture [527 x 640] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Q3-Class|IXFK80N50Q3|VDSS|= 500V| |HiperFET|[[TM]]|IXFX80N50Q3|ID25|= 80A| |Power MOSFET|R||65m|| |DS(on)| |t||250ns| |D|rr| |N-Channel Enhancement Mode| |Avalanche Rated|G| |TO-264| |Fast Intrinsic Rectifier|(IXFK)| |S| |G| |D| |S| |Symbol|Test Conditions|Maximum Ratings|Tab| |VDSS|TJ|= 25C to 150C|500|V| |VDGR|TJ|= 25C to 150C, RGS = 1M|500|V| |PLUS247| |VGSS|Continuous|30|V|(IXFX)| |VGSM|Transient|40|V| |ID25|TC|= 25C|80|A| |IDM|TC|= 25C, Pulse Width Limited by TJM|240|A|G| |IA|TC|= 25C|80|A|D|S|Tab| |EAS|TC|= 25C|5|J|G = Gate|D = Drain| |dv/dt|IS| IDM, VDD| VDSS, TJ| 150C|50|V/ns|S = Source|Tab = Drain| |PD|TC|= 25C|1250|W| |TTJJM|-55 ... +150150|CC|Features| |Tstg|-55 ... +150|C||Low Intrinsic Gate Resistance| |TL|Maximum Lead Temperature for Soldering 300|°C||Low Package Inductance| |TMSOLDd|1.6 mm (0.062in.) from Case for 10s 260 Mounting Torque (TO-264)|1.13/10|Nm/lb.in°C||Fast Intrinsic RectifierLow RDS(on) and QG| |FC|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb| |Advantages| |Weight|TO-264|10|g| |PLUS247|6 g||High Power Density| ||Easy to Mount| ||Space Savings| |Symbol|Test Conditions|Characteristic Values| |(TJ = 25C Unless Otherwise Specified)|Min. Typ. Max.|Applications| |BVDSS|VGS|= 0V, ID = 3mA 500|V||DC-DC Converters| |||||| |VGS(th)|VDS|= VGS, ID = 8mA 3.5 6.5 V||||Battery ChargersSwitch-Mode and Resonant-Mode| |IGSS|VGS|= 30V, VDS = 0V|200 nA|Power Supplies| || |||||DC Choppers| |IDSS|VDS|= V TDSS, VGS = 0V|J = 125C|2 mA|=|50|A||Temperature and Lighting Controls| |RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|65 m| ||||| **----- End of picture text -----**<br> DS100299A(12/19) © 2019 IXYS CORPORATION, All Rights Reserved ## **IXFK80N50Q3 IXFX80N50Q3** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1 35|55|S| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|10<br>1260<br>115|nF<br>pF<br>pF| |**RGi**<br>Gate Input Resistance<br>|0.15|| |||| |**td(on)**<br> <br>**t**r<br> <br>**td(off)**<br> <br>**t**f<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|30<br>20<br>43<br>15|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Q**<br>|200<br>77<br>90|nC<br>nC<br>nC| |**gd**<br>||| |**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.10C/W<br>C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**| |**IS**<br>VGS= 0V||80 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||320 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= 40A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|<br>1.8<br>15.6|250 ns<br>C<br> A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFK80N50Q3 IXFX80N50Q3** **==> picture [538 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>80 180<br>VGS = 10V VGS = 10V<br>70 160<br>140<br>60 9V<br>120<br>50<br>9V<br>100<br>40<br>80<br>30<br>8V 60<br>20<br>40 8V<br>10 20<br>7V 7V<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - AmperesID - AmperesID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125[o] C** **Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature** **==> picture [534 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 80 3.4<br>V GS = 10V<br>70 9V 3.0 VGS = 10V<br>60 2.6<br>50 8V 2.2 I D = 80A<br>I D = 40A<br>40 1.8<br>30 1.4<br>20 7V 1.0<br>10 0.6<br>6V<br>0 0.2<br>0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.0 90<br>2.8 VGS = 10V<br>TJ = 125 [o] C 80<br>2.6<br>70<br>2.4<br>60<br>2.2<br>2.0 50<br>1.8 40<br>1.6<br>30<br>1.4<br>20<br>1.2 TJ = 25 [o] C<br>1.0 10<br>0.8 0<br>0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2019 IXYS CORPORATION, All Rights Reserved ## **IXFK80N50Q3 IXFX80N50Q3** **==> picture [260 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>120<br>100<br>80<br>TJ = 125 [o] C<br> 25 [o] C<br>- 40 [o] C<br>60<br>40<br>20<br>0<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [261 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>240<br>200<br>160<br>120<br>80<br>TJ = 125 [o] C<br>TJ = 25 [o] C<br>40<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [261 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>100<br>T J = - 40 [o] C<br>80<br>25 [o] C<br>60<br>125 [o] C<br>40<br>20<br>0<br>0 20 40 60 80 100 120<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [250 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 VDS = 250V<br> I D = 40A<br>12 I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 40 80 120 160 200 240 280<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [533 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1000<br>f = 1 MHz R DS(on) Limit<br>Ciss<br>10,000 100 100µs<br>1,000 10<br>Coss<br>100 Crss 1 TJ = 150 [o] C<br>TC = 25 [o] C<br>Single Pulse<br>1ms<br>10 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFK80N50Q3 IXFX80N50Q3** **Fig. 13. Maximum Transient Thermal Impedance** 1 **==> picture [527 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>0.2 aaaaa<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8)02-18-11 ## **IXFK80N50Q3 IXFX80N50Q3** **==> picture [208 x 531] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 Outline<br>D<br>— E ES B A<br>Q S<br>7 OF<br>0R<br>Q1<br>D<br>1 in<br>0R1<br>1 2 3 L1<br>C<br>—<br>ES<br>L A1<br>_<br>| J M C A M<br>b1 HBOS b oe c<br>b2<br>e<br>SLI S 0P1 1 = Gate<br>2,4 = Drain<br>BACK SIDE 3 = Source<br>a A<br>4 0P K M D B M<br>PO<br>1 BiOTS<br> PLUS247 [TM] Outline<br>A<br>A2 E Q E1<br>+S I— _—+, 4<br>i-— D2 | i +<br>R<br>©<br>j<br>D<br>4<br>1 2 3<br>L1<br>r<br>L<br>A1 b e<br>C 3 PLCS b2 2 PLCS 2 PLCS<br>M E b4 IH<br>1 = Gate<br>2,4 = Drain<br>3 = Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFK80N50Q3 IXFX80N50Q3** ~~sd~~ Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved
Updated at April 27, 2026
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