IXFK64N50P

Power MOSFET, PolarFET, N Channel, 500 V, 64 A, 0.085 ohm, TO-264, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipatio
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 830W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 64A
Drain Source On State Resistance: 0.085ohm
Gate Source Threshold Voltage Max: 5.5V

Delivery and price
Units per pack	250
Price	8.2 €
Current stock	500+
Lead time	30 days

Datasheet

## **Polar[TM] Power MOSFET HiPerFET[TM]** 

## **IXFK64N50P IXFX64N50P** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 

|**Symbol**|**Test Conditions**||**Maximum Ratings**||
|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C||500|V|
|**VDGR**|TJ = 25°C to 150°C, R|C, RGS= 1MΩ|500|V|
|**VGSS**|Continuous||±30|V|
|**VGSM**|Transient||±40|V|
|**ID25**|TC = 25°C||64|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM||150|A|
|**IA**|TC = 25°C||64|A|
|**EAS**|TC = 25°C||2.5|J|
|**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, T|, TJ ≤150°C|20|V/ns|
|**PD**|TC = 25°C||830|W|
|**TJ**|||-55 ... +150|°C|
|**TJM**|||150|°C|
|**Tstg**|||-55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s||300|°C|
|**TSOLD**|Plastic Body for 10s||260|°C|
|**Md**|Mounting  Force|(PLUS247)                 20..120/4.5..27                N/lb.|(PLUS247)                 20..120/4.5..27                N/lb.|(PLUS247)                 20..120/4.5..27                N/lb.|
|Mounting  Torque|Mounting  Torque|(TO-264)|1.13/10         Nm/lb.in.||
|**Weight**|PLUS247||6|g|
||TO-264||10                     g|10                     g|



**V =    500V DSS I =    64A D25 R ≤ 85m Ω DS(on) t ≤ 200ns rr** 

## **TO-264  (IXFK)** 

**==> picture [105 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D<br>S (TAB)<br>**----- End of picture text -----**<br>


## **PLUS247  (IXFX)** 

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**----- Start of picture text -----**<br>
(TAB)<br>G  =  Gate   D      =  Drain<br>S  =  Source   TAB  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Fast Intrinsic Diode 

- Avalanche Rated 

- Low RDS(ON) and QG 

- Low Package Inductance 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

## **Applications** 

|(T= 25C, Unless Otherwise Specified)<br>**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.    Typ.     Max.**<br>~~|~~|**Min.    Typ.     Max.**<br>~~|~~|**Min.    Typ.     Max.**|
|**BVDSS**<br>VGS = 0V, ID=  250μA<br>500<br>~~|~~<br>~~|~~|~~|~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID=  8mA<br>3.0                  5.5     V<br>~~|~~<br>~~|~~<br>~~|~~|3.0                  5.5     V<br>~~|~~<br>~~||~~<br>~~|~~|3.0                  5.5     V|
|**IGSS**<br>VGS =±30V, VDS= 0V<br>±<br>~~|~~<br>~~|~~|±<br>~~| |~~<br>~~|~~|±200 nA|
|**IDSS**<br>VDS =  VDSS, VGS=  0V<br>25<br>TJ= 125°C<br>1<br>~~|~~<br>~~|~~|25<br>1<br>~~|~~<br>~~|~~|25μA<br>1 mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>85   m<br>~~|~~|85   m<br>~~|~~|85   mΩ|



- DC-DC Coverters 

- Battery Chargers 

- Switched-Mode and Resonant-Mode 

- Power Supplies 

- DC Choppers 

- AC and DC Motor Drives 

- Uninterrupted Power Supplies 

- High Speed Power Switching 

- Applications 

DS99348F(5/09) 

© 2009 IXYS CORPORATION,  All Rights Reserved 

## **IXFK64N50P IXFX64N50P** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.      Typ.     Max.**<br>~~|~~|**Min.      Typ.     Max.**<br>~~||~~|**Min.      Typ.     Max.**<br>~~|~~|
|**gfs**<br>VDS=  20V, ID= 0.5 • ID25,  Note 1                      30           50<br>~~|~~|,  Note 1                      30           50<br>~~||~~|S<br>~~|~~|
|**Ciss**<br>9700<br>**Coss**<br>VGS= 0V, VDS=  25V, f = 1MHz<br>970<br>**Crss**<br>30<br>~~|~~|9700<br>970<br>30<br>~~| |~~|nF<br>pF<br>pF<br>~~|~~|
|**td(on)**<br> <br>**tr**<br>25<br>**td(off)**<br>85<br>**tf**<br>22<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2Ω(External)|30<br>25<br>85<br>22|ns<br>ns<br>ns<br>ns|
|**Q**<br>150|150|nC|
|**Qg(on)**<br>150<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>50<br>**Qgd**<br>50|150<br>50<br>50|nC<br>nC<br>nC|
|**RthJC**<br>0.15<br>**RthCS**<br>0.15|0.15<br>0.15|0.15°C/W<br>°C/W|



**TO-264 (IXFK) Outline** 

## **Source-Drain Diode** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|**IS**<br>VGS= 0V|64     A|64     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|250     A|250     A|
|**VSD**<br>IF= 64A, VGS= 0V,  Note 1|1.5     V|1.5     V|
|**SD**<br>F= 64A, VGS= 0V,  Note 1<br>**trr**<br>200   nS<br>**QRM**<br>0.6<br>**IRM**6.0<br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V<br>\|200   nS<br>0.6<br>6.0|200   nS<br>μC<br> A|



**PLUS 247[TM] (IXFX) Outline** R ~~EY o=~~ 

Note 1:  Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. 

|Dim.<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>5.59<br>6.20<br>.220 0.244<br>R<br>4.32<br>4.83<br>.170<br>.190|||



IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFK64N50P IXFX64N50P** 

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Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>70 160<br>VGS = 10V V GS = 10V<br>60           8V 140          8V<br>7V<br>120<br>50<br>100<br>6V 7V<br>40<br>80<br>30<br>60<br>6V<br>20 40<br>5V<br>10 20 5V<br>0 0<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br>Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 32A Value<br>@ 125ºC vs. Junction Temperature<br>70 3.2<br>60 V         8V GS = 10V 3.02.8 VGSGS = 10V<br>        7V<br>2.6<br>50 2.4<br>6V 2.2 I D = 64A D = 64A = 64A<br>40 2.0<br>1.8 I D = 32A  D = 32A  = 32A<br>30 1.6<br>1.4<br>20 1.2<br>5V<br>1.0<br>10 0.8<br>0.6<br>0 0.4<br>0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - AmperesID  - AmperesID<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
70 3.2<br>60 V         8V GS = 10V 2.83.02.8 VGSGS = 10V<br>        7V<br>2.6<br>50 2.4<br>6V 2.2 I D = 64A D = 64A = 64A<br>40 2.0<br>I D = 32A  D = 32A  = 32A<br>1.8<br>30 1.6<br>1.4<br>20 1.2<br>5V<br>1.0<br>10 0.8<br>0.6<br>0 0.4<br>0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 32A Value  Fig. 6. Maximum Drain Current vs.<br>vs. Drain Current Case Temperature<br>3.4 70<br>3.2 V GS = 10V<br>3.0 TJ = 125ºC 60<br>2.8<br>50<br>2.6<br>2.4<br>40<br>2.2<br>2.0<br>30<br>1.8<br>1.6<br>20<br>1.4<br>TJ = 25ºC<br>1.2 10<br>1.0<br>0.8 0<br>0 20 40 60 80 100 120 140 160 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION,  All Rights Reserved 

## **IXFK64N50P IXFX64N50P** 

**Fig. 7. Input Admittance** 

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**----- Start of picture text -----**<br>
90<br>80<br>70<br>60<br>50<br>T J = 125ºC<br>40           25ºC<br>- 40ºC<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Forward Voltage Drop of Intrinsic Diode** 

**==> picture [249 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60 TJ = 125ºC<br>40<br>20 TJ  = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>90<br>80 TJ = - 40ºC<br>70<br>60 25ºC<br>50<br>125ºC<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  VDS = 250V<br> I D = 32A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [256 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>1,000<br>Coss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [258 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>1 10 100 1000<br>Pulse Width - Second<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions,  and  Dimensions. 

IXYS REF: F_64N50P(9J)4-27-09 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 29, 2026

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