IXFK48N60P

Power MOSFET, N Channel, 600 V, 48 A, 0.135 ohm, TO-264, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 830W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 48A
Drain Source On State Resistance: 0.135ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	9.7 €
Current stock	10+
Lead time	30 days

Datasheet

## **PolarHV[TM ] HiPerFET Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

**IXFK 48N60P IXFX 48N60P** 

**V = 600 V DSS I = 48 A D2 R ≤ 135m Ω DS(on) t ≤ 200 ns rr** 

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**----- Start of picture text -----**<br>
TO-264 (IXFK)<br>G<br>D S (TAB)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-264 (IXFK)**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|||600||V||||||
|**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ|||600||V||||||
|**VGSS**|Continuous|||±30||V|G|||||
|**VGSM**|Transient|||±40||V|S<br>D||(TAB)|||
|**ID25**|TC = 25°C|||48||A||||||
|**IDM**|TC = 25°C, pulse width limited by TJM|||110||A|**PLUS247 (IXFX)**|||||
|**IAR**|TC = 25°C|||48||A||||||
|**EAR**|TC = 25°C|||70||mJ||||||
|**EAS**|TC = 25°C|||2.0||J||||||
|||||||||||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>TJ ≤150°C, RG= 4Ω|||20||V/ns|||(TAB)|||
|**PD**|TC = 25°C|||830||W||||||
|**TJ**|||-55 ... +150|||°C|G =  Gate|D     = Drain|D     = Drain||D     = Drain|
|**TJM**||||150||°C|S =  Source|Tab = Drain||||
|**Tstg**|||-55 ... +150|||°C||||||
|**Md**|Mounting torque (TO-264)<br>1.13/10|1.13/10|1.13/10|1.13/10|Nm/lb.in.|||||||
|**Weight**<br>PLUS247|TO-264<br>PLUS247|||10<br>6||g<br>g|**Features**|||||
|**TL**|1.6 mm (0.062 in.) from case for 10 s|||300||°C|l International standard packages|||International standard packages|International standard packages|
|**TSOLD**|Plastic body for 10 s|||260||°C|l Fast recovery diode|||||
||||||||l Unclamped Inductive Switching (UIS)||Unclamped Inductive Switching (UIS)|Unclamped Inductive Switching (UIS)|Unclamped Inductive Switching (UIS)|
||||||||rated|||||
|**Symbol**<br>**Test Conditions**<br>(TJ= 25°C, unless otherwise specified)||**Characteristic Values**<br>**Min.    Typ.**<br>**Max.**|||||l Low package inductance<br>- easy to drive and to protect|||||
|**BVDSS**<br>**VGS(th)**|VGS = 0 V, ID= 250µA<br>VDS = VGS, ID= 8 mA|600<br>3.0|~~| |~~<br>~~_~~||5.0|V<br>V|**Advantages**|||||
|**IGSS**<br>**IDSS**|VGS =±30 VDC, VDS= 0<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 125°C|||±200<br>25<br>1000<br>~~_-~~||nA<br>µA<br>µA|l Easy to mount<br>l Space savings<br>l High power density|||||
|**RDS(on)**|VGS = 10 V, ID= 0.5 ID25||||135|mΩ||||||
||Pulse test, t≤300µs, duty cycle d≤2 %|||||||||||



> l International standard packages 

> l Fast recovery diode 

> l Unclamped Inductive Switching (UIS) rated 

> l Low package inductance - easy to drive and to protect 

DS99375E(02/06) 

© 2006 IXYS All rights reserved 

**IXFK 48N60P   IXFX 48N60P** 

|**Symbol**|**Test Conditions**|(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|**Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**|
|---|---|---|---|---|---|---|
|**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**<br>**tr**|VDS = 20 V; ID= 0.5 ID25, pulse test<br>VGS = 0 V, VDS= 25 V, f = 1 MHz<br>VGS = 10 V, VDS= 0.5 ID25||35|53<br>8860<br>850<br>60<br>30<br>25||S<br>pF<br>pF<br>pF<br>ns<br>ns|
|**td(off)**|RG<br>= 2Ω(External)|||85||ns|
|**tf**||||22||ns|
|**Qg(on)**<br>**Qgs**|VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25|||150<br>50||nC<br>nC|
|**Qgd**||||50||nC|
|**RthJC**|||||0.15|°C/W|
|**RthCs**<br>**Source-Drain Diode**<br>**Symbol**|TO-264 and PLUS247<br>**Source-Drain Diode**<br>**Test Conditions**|(TJ= 25°C, unless otherwise specified)|0.15<br>°C/W<br>**Characteristic Values**<br>C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**||||
|**IS**<br>**ISM**|VGS= 0 V<br>Repetitive||||48<br>110|A<br>A|
|**VSD**|IF= IS, VGS= 0 V,||||1.5|V|
||Pulse test, t≤300µs, duty cycle d|s, duty cycle d≤2 %|||||
||||||||
|**trr**|IF= 25A, -di/dt = 100 A/µs||||200|ns|
|**QRM**|VR= 100V|||0.8||µC|
|**IRM**|**RM**|**RM**|**RM**|**RM**6.0||A|



## **TO-264 (IXFK) Outline** 

## **PLUS 247[TM] (IXFX) Outline** 

|Dim.<br>Millimeter<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>5.59<br>R<br>4.32|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 

4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6,771,478 B2 

**IXFK 48N60P   IXFX 48N60P** 

**Fig. 1. Output Characteristics @ 25ºC** 

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50<br>VGS = 10V<br>45<br>          8V<br>40           7V<br>35<br>30<br>25<br>6V<br>20<br>15<br>10<br>5<br>5V<br>0<br>0 1 2 3 4 5 6<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 125ºC** 

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**----- Start of picture text -----**<br>
50<br>45 VGS = 10V<br>          7V<br>40<br>35<br>6V<br>30<br>25<br>20<br>15<br>10<br>5V<br>5<br>0<br>0 2 4 6 8 10 12 14<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID** 

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**----- Start of picture text -----**<br>
3.4<br>3.1 VGS = 10V<br>TJ = 125ºC<br>2.8<br>2.5<br>2.2<br>1.9<br>1.6<br>1.3<br>TJ = 25ºC<br>1<br>0.7<br>0 20 40 60 80 100 120 140<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25ºC** 

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**----- Start of picture text -----**<br>
120 VGS = 10V<br>           8V<br>100<br>80 7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 4 8 12 16 20 24<br>VD S - Volts<br>Fig. 4. RDS(on) Normalized to 0.5 ID25<br>Value vs. Junction Temperature<br>3.1<br>2.8 VGS = 10V<br>2.5<br>2.2<br>1.9 I D = 48A<br>1.6<br>ID = 24A<br>1.3<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Drain Current vs. Case Temperature** 

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50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXFK 48N60P   IXFX 48N60P** 

**Fig. 7. Input Admittance** 

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**----- Start of picture text -----**<br>
80<br>70<br>60<br>50<br> TJ = 125ºC<br>40          25ºC<br>        -40ºC<br>30<br>20<br>10<br>0<br>4 4.5 5 5.5 6 6.5 7<br>VG S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>160<br>140<br>120<br>100<br>80<br>60<br>TJ = 125ºC<br>40<br>20 TJ = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>VS D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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**----- Start of picture text -----**<br>
100000<br>f  = 1MHz<br>Ciss<br>10000<br>Coss<br>1000<br>100 Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40 TJ = -40ºC<br>       25ºC<br>30      125ºC<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>9 VDS = 300V<br>8 ID = 24A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 13. Maximum Transient Thermal Resistance** 

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**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>C / W<br>º<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

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Updated at April 27, 2026

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