Image not available
Illustrative purposes only
IXFK48N50
Power MOSFET, N Channel, 500 V, 48 A, 0.1 ohm, TO-264, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 48A
- Drain Source On State Resistance: 0.1ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 14.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** **V I R** DSS D25 DS(on) **500 V 44 A 0.12 Ω 500 V 48 A 0.10 Ω t ≤ 250 ns** rr **IXFK / IXFN 44 N50 IXFK / IXFN 48 N50** N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr |**Symbol**<br>**VDSS**<br>**VDGR**<br>**VGS**|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous|**Test Conditions**<br>TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>500<br>500<br>V<br>500<br>500<br>V<br>±20<br>±20<br>V|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>500<br>500<br>V<br>500<br>500<br>V<br>±20<br>±20<br>V|**Maximum Ratings**<br>**IXFK**<br>**IXFN**<br>500<br>500<br>V<br>500<br>500<br>V<br>±20<br>±20<br>V|S<br>G<br>D<br>**TO-264 AA**<br>**(IXFK)**<br>(TAB)<br>=|S<br>G<br>D<br>**TO-264 AA**<br>**(IXFK)**<br>(TAB)<br>=| |---|---|---|---|---|---|---|---| |**VGSM**|Transient||±30|±30|V||| |**ID25**|TC = 25°C|44N50|44|44|A||| |||48N50|48|48|A|**miniBLOC, SOT-227 B (IXFN)**|| |**IDM**|TC = 25°C,|44N50|176|176|A|S<br>**E153432**|| ||pulse width limited by TJM|48N50|192|192|A|D<br>G|| |**IAR**|TC = 25°C||24|24|A||| |**EAR**|TC = 25°C||30|30|mJ|G|| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,<br>TJ ≤150°C, RG= 2Ω||5|5|V/ns|S<br>S|S<br>D| |**PD**|TC = 25°C||500|520|W|G = Gate<br>D = Drain<br>S = Source<br>TAB = Drain|| |**TJ**|||-55 ... +150||°C|Either Source terminal at miniBLOC can be used|| |**TJM**||||150|°C|as Main or Kelvin Source|| |**Tstg**|||-55 ... +150||°C||| |**TL**|1.6 mm (0.063 in) from case for 10 s|1.6 mm (0.063 in) from case for 10 s|300|-|°C|**Features**<br>International standard packages|| |**VISOL**|50/60 Hz, RMS<br>t = 1 min||-|2500|V~|Molding epoxies meet UL 94 V-0|| ||IISOL ≤1 mA<br>t = 1 s||-|3000|V~|flammability classification|| |**Md**|Mounting torque<br>Terminal connection torque||0.9/6<br>-|1.5/13<br>1.5/13|Nm/lb.in.<br>Nm/lb.in.|SOT-227B miniBLOC with aluminium<br>nitride isolation<br>Low RDS (on)HDMOSTMprocess|| |**Weight**|||10|30|g|Unclamped Inductive Switching (UIS)|| Either Source terminal at miniBLOC can be used as Main or Kelvin Source International standard packages Molding epoxies meet UL 94V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOS[TM] process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier **Symbol Test Conditions** ## **Characteristic Values** |**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---| |||(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|||| |**VDSS**|VGS = 0 V, ID= 1 mA|500|||V| |**VGS(th)**|VDS = VGS, ID= 8 mA|2||4|V| |**IGSS**<br>**IDSS**|VGS =±20 VDC, VDS= 0<br>VDS = 0.8 • VDSS<br>VGS = 0 V|TJ= 25°C<br>TJ= 125°C||±200<br>400<br>2|nA<br>µA<br>mA| |**RDS(on)**|VGS = 10 V, ID= 0.5 • ID25|44N50||0.12|Ω| |||48N50||0.10|Ω| ||Pulse test,t≤300µs,dutyc|cycle d≤2 %|||| ## **Applications** DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls ## **Advantages** Easy to mount Space savings High power density 93001I (07/00) IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved C1 - 184 **IXFN / IXFK 44N50 IXFN / IXFK 48N50** |**Symbol**|**Test Conditions**|(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**Characteristic Values**<br>C, unless otherwise specified)<br>**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||**min.**||**typ.**|**max.**||||||||| |**gfs**|VDS = 10 V; ID= 0.5 • ID25, pulse test||22||42||S|||||||| |**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**|VGS = 0 V, VDS= 25 V, f = 1 MHz||||8400<br>900<br>280<br>30<br>-||pF<br>pF<br>pF<br>ns|||Al||||| |**tr**|VGS = 10 V, VDS= 0.5 • V|= 0.5 • VDSS, ID= 0.5 • ID25|||60||ns|||||||| |**td(off)**|RG= 1Ω(External),||||100||ns|||||||| |**tf**|||||30||ns|||||||| |**Qg(on)**<br>**Qgs**<br>**Qgd**|VGS = 10 V, VDS= 0.5 • V<br>)<br>>|= 0.5 • VDSS, ID= 0.5 • ID25|||270<br>60<br>135||nC<br>nC<br>nC||A<br>A1<br>A2<br>Dim.||Millimeter<br>Min.<br>Max.<br>4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10||Inches<br>Min.<br>Max.<br>.190<br>.202<br>.100<br>.114<br>.079<br>.083|| |**RthJC**|TO-264 AA|||||0.25|K/W||b<br>b1||1.12<br>2.39|1.42<br>2.69|.044<br>.094|.056<br>.106| |**RthCK**|TO-264 AA||||0.15||K/W||b2<br>c||2.90<br>0.53|3.09<br>0.83|.114<br>.021|.122<br>.033| |**RthJC**|miniBLOC, SOT-227 B|||||0.24|K/W||D<br>E||25.91<br>19.81|26.16<br>19.96|1.020<br>.780|1.030<br>.786| |**RthCK**|miniBLOC, SOT-227 B||||0.05||K/W||e<br>J||5.46 BSC<br>0.00|5.46 BSC<br>0.25|.215 BSC<br>.000|.215 BSC<br>.010| ||||||||||K||0.00|0.25|.000|.010| ||||||||||L||20.32|20.83|.800|.820| |**Source-Drain Diode**|**Source-Drain Diode**||**Characteristic Values**||||||L1||2.29|2.59|.090|.102| |||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|||||P<br>Q||3.17<br>6.07|3.66<br>6.27|.125<br>.239|.144<br>.247| |**Symbol**|**Test Conditions**||**min.**||**typ.**|**max.**|||Q1||8.38|8.69|.330|.342| ||||||||||R||3.81|4.32|.150|.170| |**IS**|VGS = 0 V|||||48|A||R1<br>S||1.78<br>6.04|2.29<br>6.30|.070<br>.238|.090<br>.248| ||||||||||T||1.57|1.83|.062|.072| |**ISM**|Repetitive; pulse width limited by TJM|||||192|A|||||||| |**VSD**|IF= 100 A, VGS= 0 V,|||||1.5|V|**miniBLOC, SOT-227 B**||||||| ||Pulse test, t≤300µs, duty cycle d≤2 %|||||||||||||| |**trr**||||||250|ns|||||||| |**QRM**|IF= IS, -di/dt = 100 A/µs, VR= 100 V||||TBD||µC|||||||| |**IRM**|||||20||A|||||||| |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>31.50<br>B<br>7.80|31.50<br>31.88<br>7.80<br>8.20|1.240<br>1.255<br>0.307<br>0.323| |C<br>4.09<br>D<br>4.09|4.09<br>4.29<br>4.09<br>4.29|0.161<br>0.169<br>0.161<br>0.169| |E<br>4.09<br>F<br>14.91|4.09<br>4.29<br>14.91<br>15.11|0.161<br>0.169<br>0.587<br>0.595| |G<br>30.12<br>H<br>38.00|30.12<br>30.30<br>38.00<br>38.23|1.186<br>1.193<br>1.496<br>1.505| |J<br>11.68<br>K<br>8.92|11.68<br>12.22<br>8.92<br>9.60|0.460<br>0.481<br>0.351<br>0.378| |L<br>0.76<br>M<br>12.60|0.76<br>0.84<br>12.60<br>12.85|0.030<br>0.033<br>0.496<br>0.506| |N<br>25.15<br>O<br>1.98|25.15<br>25.42<br>1.98<br>2.13|0.990<br>1.001<br>0.078<br>0.084| |P<br>4.95<br>Q<br>26.54|4.95<br>5.97<br>26.54<br>26.90|0.195<br>0.235<br>1.045<br>1.059| |R<br>3.94<br>S<br>4.72|3.94<br>4.42<br>4.72<br>4.85|0.155<br>0.174<br>0.186<br>0.191| |T<br>24.59<br>U<br>-0.05|24.59<br>25.07<br>-0.05<br>0.1|0.968<br>0.987<br>-0.002<br>0.004| IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 © 2000 IXYS All rights reserved C1 - 185 **IXFN / IXFK 44N50 IXFN / IXFK 48N50** ## Fig. 1 Output Characteristics **==> picture [203 x 553] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 TJ = 25°C VGS = 10V 7V<br>6V<br>80<br>70<br>60<br>50<br>40<br>5V<br>30<br>20<br>10<br>0<br>0 5 10 15 20 25 30 35<br>VDS - Volts<br>Fig. 3 RDS(on) vs. Drain Current<br>1.6<br>TJ = 25°C<br>1.5<br>1.4<br>1.3<br>VGS = 10V<br>1.2<br>VGS = 15V<br>1.1<br>1.0<br>0.9<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br>Fig. 5 Drain Current vs.<br>Case Temperature<br>60<br>48N50<br>50<br>44N50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## Fig. 2 Input Admittance **==> picture [206 x 554] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70 TJ = 25°C<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Volts<br>Fig. 4 Temperature Dependence<br>of Drain to Source Resistance<br>2.50<br>2.25<br>2.00<br>1.75<br>ID = 24A<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br>Fig. 6 Temperature Dependence of<br>Breakdown and Threshold Voltage<br>1.2<br>VGS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage © 2000 IXYS All rights reserved C1 - 186 **IXFN / IXFK 44N50 IXFN / IXFK 48N50** ## Fig.7 Gate Charge Characteristic Curve ## Fig.8 Capacitance Curves **==> picture [200 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br>8 ID = 24A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 50 100 150 200 250 300 350 400<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [96 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Gate Charge - nCoulombs<br>**----- End of picture text -----**<br> **==> picture [208 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>9000<br>8000 Ciss<br>7000<br>f = 1 MHz<br>6000<br>VDS = 25V<br>5000<br>4000<br>3000<br>2000<br>1000 Coss<br>Crss<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> **==> picture [452 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.9 Source Current vs. Source<br>to Drain Voltage<br>100<br>90<br>80<br>70<br>60<br>50<br>40 TJ = 125°C<br>30<br>20 TJ = 25°C<br>10<br>0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>VSD - Volt<br>Fig.10 Transient Thermal Impedance<br>0.1<br>0.01<br>0.001 0.01 0.1 1<br>Time - Seconds<br> - Amperes<br>ID<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved C1 - 187 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →