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IXFK44N50P
Power MOSFET, N Channel, 500 V, 44 A, 0.14 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiperFET
- Qualification: -
- Power Dissipation: 658W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 44A
- Drain Source On State Resistance: 0.14ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.46 € |
| Current stock | 200+ |
| Lead time | 30 days |
## **Polar[TM ] HiperFET[TM] Power MOSFET** ## **IXFT44N50P IXFH44N50P IXFK44N50P** **V = 500V DSS I = 44A D25 R 140m DS(on)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier **==> picture [109 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXFT)<br>G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br> ||||||**TO-247 (IXFH)**|| |---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|||| |**VDSS**<br>TJ = 25C to 150C<br>500<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>500<br>V<br>**VGSS**<br>Continuous<br>30<br>V<br>**VGSM**<br>Transient<br>40<br>V<br>G<br>S<br>D(Tab)<br>D<br>~~ZB~~||||||| |**ID25**|TC = 25C<br>44|44||A||| |**IDM**|TC = 25C, Pulse Width Limited by TJM|110||A|**TO-264 (IXFK)**|| |**IA**|TC = 25C|44||A||| |**EAS**|TC = 25C|1.7||J||| |~~a~~|||||G|| |**dv/dt**IS IDM, VDD VDSS, TJ 150°C 10 V/ns<br>**PD**<br>TC = 25C<br>658<br>W<br>**TJ**<br>-55 ... +150<br>C<br>~~ce ~~|||||G = Gate D = Drain<br>S<br>D<br>D (Tab)<br> ~~TCS~~|| |**TJM**||150|C||S = Source Tab = Drain|S = Source Tab = Drain| |**Tstg**||-55 ... +150|C|||| |**TL**|Maximum Lead Temperature for Soldering|300||°C|**Features**|| |**TSOLD**|Plastic Body for 10s|260||°C|International Standard Packages|International Standard Packages| |**Md**|Mounting Torque (TO-247& TO-264)|1.13/10|Nm/lb.in||Fast Intrinsic Rectifier|| |**Weight**|**Weight**TO-268|4||g|Avalanche Rated|| |TO-247<br>TO-264 10 g|TO-247<br>TO-264 10 g|6<br>TO-264 10 g|TO-264 10 g|g<br>TO-264 10 g|Low RDS(ON)and QG<br>Low Package Inductance|Low Package Inductance| - International Standard Packages - Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**<br>~~||~~|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>500<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.0<br>5.0 V<br>~~|~~<br>~~|~~|5.0 V<br>~~| |~~<br>~~||~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br><br>~~|~~|<br>~~| |~~<br>~~~~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>500|25<br>500<br>~~~~~|25A<br>500μA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>140 m|140 m<br>~~||~~|140 m| - High Power Density - Easy to Mount Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99366F(04/14) © 2014 IXYS CORPORATION, All Rights Reserved ## **IXFT44N50P IXFH44N50P IXFK44N50P** |**Symbol**<br>(TJ= 25C Unless Otherwise Specified)|**Test Conditions**<br>C Unless Otherwise Specified)**Min. Typ.**|**Test Conditions**<br>C Unless Otherwise Specified)**Min. Typ.**|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Max.**|**Characteristic Values**<br>**Max.**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**|**TO-247 Outline**||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|||VDS = 20V, ID= 0.5 • ID25, Note 1 20 32<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>85 ns<br>27 ns<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3(External)|, Note 1 20 32<br>5440<br>639<br>40<br>28 ns<br> 29 ns<br>85 ns<br>27 ns|, Note 1 20 32<br>5440<br>639<br>40<br>28 ns<br>29 ns<br>85 ns<br>27 ns<br>~~-~~|28 ns<br>29 ns<br>85 ns<br>27 ns|S<br>pF<br>pF<br>pF<br>28 ns<br>29 ns<br>85 ns<br>27 ns|~~e~~<br>P<br> **1 2 3**<br>Terminals: 1 - Gate<br>2 - Drain<br>~~ic~~ oN!~~=~~<br>~~P~~s Oo<br>~~al~~|||||||||||||| |**Qg(on)**|||98|98||nC||||||3 - Source||||||||| |**Qgs**||VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|35|35||nC||Dim.||||Millimeter<br>Min.<br>Max.|||Inches<br>Min.<br>Max.|||||| |**Qgd**<br>**RthJC**|||30|30<br>0.19|0.19|nC<br> C/W|||A<br>A1<br>A2|||4.7<br>5.3<br>2.2<br>2.54<br>2.2<br>2.6|||.185<br>.087<br>.059|||.209<br>.102<br>.098||| |**RthCS**||TO-247 0.21|TO-247 0.21|TO-247 0.21C/W|||||b|||1.0<br>1.4|||.040|||.055||| |**RthCS**||TO-264<br>0.15|0.15|0.15||C/W|||b1<br>b~~2~~|||1.65<br>2.13<br>2.87<br>3.12|||.065<br>.113|||.084<br>.123||| ||||||||||C|||.4<br>.8|||.016|||.031||| ||||||||||D|||20.80<br>21.46|||.819|||.845||| |**Source-Drain Diode**||**Source-Drain Diode**|||||||E|||15.75<br>16.26|||.610|||.640||| ||||||||||e|||5.20<br>5.72||0.205 0.225||||||| ||||||||||L|||19.81<br>20.32|||.780|||.800||| |**Symbol**||**Test Conditions**|**Characteristic Values**||**Characteristic Values**||||L1|||4.50||||||.177||| |(TJ= 25C Unless Otherwise Specified)|C Unless Otherwise Specified)**Min. Typ.**||**Min. Typ.**|**Min. Typ. Max.**|**Max.**||||P|||3.55<br>3.65|||.140|||.144||| ||||||||||Q|||5.89<br>6.40||0.232 0.252||||||| |**IS**||VGS= 0V||44|44|A|||R|||4.32<br>5.49|||.170|||.216||| ||||||||||S|||6.15 BSC|||242 BSC|||||| |**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min. Typ.**|**Min. Typ. Max.**|**Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ.**|**Min. Typ. Max.**|**Max.**| |**IS**<br>VGS= 0V|44|44<br>A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|110|110<br>A| |**SM**<br>Repetitive, Pulse Width Limited by TJM||| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.5|1.5<br>V| |**trr**<br>200 ns<br>**IRM**6.0<br>**QRM**<br>0.6 μC<br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|200 ns<br>6.0 <br>0.6 μC|200 ns<br> A<br>0.6 μC| ## **TO-264 AA Outline** Note 1. Pulse test, t 300s, duty cycle, d 2%. **==> picture [118 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>: | |<br>Terminals: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> ||||Terminals:<br>1 - Gate|Terminals:<br>1 - Gate|1 - Gate|1 - Gate|1 - Gate| |---|---|---|---|---|---|---|---| |||||2 - Drain|2 - Drain|2 - Drain|| |||||3 - Source|3 - Source|3 - Source|| |Dim.|Millimeter||Inches||||| ||Min.|Max.|Min.|Max.|||| |A|4.82|5.13|.190|.202|||| |A1|2.54|2.89|.100|.114|||| |A2|2.00|2.10|.079|.083|||| |b|1.12|1.42|.044|.056|||| |b1|2.39|2.69|.094|.106|||| |b2<br>c|2.90<br>0.53|3.09<br>0.83|.114<br>.021|.122<br>.033|||| |D|25.91|26.16|1.020|1.030|||| |E|19.81|19.96|.780|.786|||| |e|5.46 BSC|5.46 BSC|.215 BSC|.215 BSC|||| |J|0.00|0.25|.000|.010|||| |K|0.00|0.25|.000|.010|||| |L|20.32|20.83|.800|.820|||| |L1<br>P|2.29<br>3.17|2.59<br>3.66|.090<br>.125|.102<br>.144|||| |Q|6.07|6.27|.239|.247|||| |Q1|8.38|8.69|.330|.342|||| |R|3.81|4.32|.150|.170|||| |R1|1.78|2.29|.070|.090|||| |S|6.04|6.30|.238|.248|||| IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFT44N50P IXFH44N50P IXFK44N50P** **==> picture [263 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ TJ = 25ºC<br>45<br>VGS = 10V<br>40 7V<br>35<br>30<br>25<br>6V<br>20<br>15<br>10<br>5V<br>5<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics<br>@ TJ = 125ºC<br>45<br>VGS = 10V<br>40 7V<br>35<br>30 6V<br>25<br>20<br>15<br>5V<br>10<br>5<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 22A Value<br>vs. Drain Current<br>3.2<br> VGS = 10V<br>2.8<br>TJ = 125ºC<br>2.4<br>2.0<br>1.6<br>TJ = 25ºC<br>1.2<br>0.8<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics<br>@ TJ = 25ºC<br>100<br>VGS = 10V<br>90<br> 8V<br>80<br>70<br>7V<br>60<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature** **==> picture [253 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>2.8 VGS = 10V<br>2.4<br>2 I D = 44A<br>1.6 I D = 22A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Maximum Drain Current vs. Case Temperature** **==> picture [255 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved ## **IXFT44N50P IXFH44N50P IXFK44N50P** **==> picture [538 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>60<br>60<br>50<br>50<br>40 TJ = - 40ºC<br>40 25ºC<br> 125ºC<br>30<br>30<br>TJ = 125ºC<br> 25ºC<br>20<br>20 - 40ºC<br>10 10<br>0 0<br>3.5 4 4.5 5 5.5 6 6.5 0 10 20 30 40 50 60 70<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode Fig. 10. Gate Charge<br>140 10<br>9 V DS = 250V<br>120 I D = 22A<br>8<br> I G = 10mA<br>100 7<br>6<br>80<br>5<br>60 TJ = 125 º C<br>4<br>40 T J = 25ºC 3<br>2<br>20<br>1<br>0 0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 40 50 60 70 80 90 100<br>VSD - Volts QG - NanoCoulombs<br> - Amperes - Siemens<br>ID gf s<br> - Volts<br>GS<br> - AmperesIS V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [528 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 1,000<br> TJ = 150ºC<br>C iss T C = 25ºC<br>RDS(on) Limit<br>1,000 100<br>Coss 25µs<br>100µs<br>100 10<br>1ms<br>DC 10ms<br>Crss<br> f = 1 MHz<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFT44N50P IXFH44N50P IXFK44N50P** ## **Fig. 13. Maximum Transient Thermal Resistance** **==> picture [519 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N50P(8J) 03-21-06-*B **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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