IXFK27N80Q

Power MOSFET, Q-Class, N Channel, 800 V, 27 A, 0.32 ohm, TO-264AA, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; P
MSL: MSL 1 - Unlimited
SVHC: Lead (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: HiPerFET
Qualification: -
Power Dissipation: 500W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264AA
Drain Source Voltage Vds: 800V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 27A
Drain Source On State Resistance: 0.32ohm
Gate Source Threshold Voltage Max: 4.5V

Delivery and price
Units per pack	100
Price	16.23 €
Current stock	10+
Lead time	30 days

Datasheet

## **HiPerFET[TM] Power MOSFETs Q-CLASS** 

## **IXFK 27N80Q IXFX 27N80Q** 

**V = 800 V DSS I = 27 A D25 R = 320 m Ω DS(on)** 

## Single MOSFET Die 

**t ≤ 250 ns** rr 

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr 

|**Symbol**|**Test Conditions**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|---|---|---|
|**VDSS**|TJ|= 25°C to 150°C||800||V|
|**VDGR**|TJ|= 25°C to 150°C; R|C; RGS= 1 MΩ|800||V|
|**VGS**|Continuous|||±20||V|
|**VGSM**|Transient|||±30||V|
|**ID25**|TC|= 25°C||27||A|
|**IDM**|TC|= 25°C, pulse width limited by TJM||108||A|
|**IAR**<br>Se|TC <br>Se|= 25°C<br>Se|Se|27<br>Se|Se|A<br>Se|
|**EAR**|TC|= 25°C||60||mJ|
|**EAS**|TC|= 25°C||2.5||J|
|**dv/dt**|IS|≤IDM, di/dt≤100 A/µs, VDD ≤VDSS||5|V/ns||
||TJ|≤150°C, RG= 2Ω|||||
|**PD**|TC|= 25°C||500||W|
|**TJ**||||-55 ... +150||°C|
|**TJM**||||150||°C|
|**Tstg**||||-55 ... +150||°C|
|**TL**|1.6 mm (0.063 in.) from case for 10 s|1.6 mm (0.063 in.) from case for 10 s||300||°C|
|**Md**|Mounting torque||TO-264|0.4/6   Nm/lb.in.|0.4/6   Nm/lb.in.||
|**Weight**|||PLUS 247||6|g|
||||TO-264||10|g|



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PLUS 247 [TM]  (IXFX)<br>**----- End of picture text -----**<br>


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G  (TAB)<br>D<br>TO-264 AA (IXFK)<br>G<br>D (TAB)<br>S<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br>


## **Features** 

IXYS advanced low Qg  process Low gate charge and capacitances - easier to drive 

- faster switching 

International standard packages Low R DS (on) 

Rated for unclamped Inductive load switching (UIS)  rated Molding epoxies meet UL 94 V-0 flammability classification 

## **Applications** 

|||**Applications**|
|---|---|---|
|**Symbol**|**Test Conditions**|**Characteristic Values**<br>**Applications**|
|**VDSS**<br>V<br>**VGS(th)**<br>V<br>**IGSS**<br>V<br>**IDSS**<br>V<br>V<br>**RDS(on)**<br>V<br>Note 1|VGS= 0 V, ID= 1mA<br>VDS= VGS, ID= 4mA<br>VGS=±20 V, VDS= 0<br>VDS=  VDSS<br>VGS= 0 V<br>VGS= 10 V, ID= 0.5 • ID25<br>Note 1|(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**<br>800<br>V<br>2.0<br>4.5   V<br>±100 nA<br>100µA<br>TJ= 125°C<br>2 mA<br>320 mΩ<br>**Advantages**<br>~~|~~<br>||<br>=7<br>,<br>|||



DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls 

## **Advantages** 

PLUS 247[TM ] package for clip or spring mounting Space savings High power density 

DS98722A (12/02) 

© 2002 IXYS All rights reserved 

**IXFK 27N80Q IXFX 27N80Q** 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|PLUS 247|[TM]|Outline|
|(TJ = 25°C, unless otherwise specified)|
|min.|typ.|max.|
|gfs|VDS|= 10 V; ID = 0.5 • ID25|Note 1|20|27|S|
|Ciss|7600|pF|
|Coss|VGS = 0 V, VDS = 25 V, f = 1 MHz|750|pF|
|Crss|120|pF|
|t|20|ns|
|d(on)|
|tr|VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|28|ns|
|td(off)|RG = 1 Ω (External),|50|ns|Terminals:|1 - Gate|
|tf|||-|13|ns|T|||2 - Drain (Collector)3 - Source (Emitter)|l.A|ia|
|4 - Drain (Collector)|
|Q|170|nC|
|g(on)|Dim.|Millimeter|Inches|
|Qgs|VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25|47|nC|A|4.83Min.|Max.5.21|.190Min.|Max..205|
|Qgd|||65|nC|A1|2.29|2.54|.090|.100|
|-|A2|1.91|2.16|.075|.085|
|RthJC|0.26|K/W|b|1.14|1.40|.045|.055|
|RthCK|—|0.15|K/W|bb12|1.912.92|2.133.12|.075.115|.084.123|
|C|0.61|0.80|.024|.031|
|D|20.80|21.34|.819|.840|
|E|15.75|16.13|.620|.635|
|Source-Drain Diode|Characteristic Values|e|5.45 BSC|.215 BSC|
|(TJ = 25°C, unless otherwise specified)|LL1|19.813.81|20.324.32|.780.150|.800.170|
|Symbol|Test Conditions|min.|typ.|max.|Q|5.59|6.20|.220|0.244|
|R|4.32|4.83|.170|.190|
|IS|VGS|= 0 V|27|A|TO-264 AA Outline|
|ISM|Repetitive;|108|A|
|pulse width limited by TJM|
|VSD|IF = IS, VGS = 0 V, Note 1|1.5|V|
|trr|250|ns|
|QRM|IF = IS,-di/dt = 100 A/µs, VR = 100 V|1.3|µC|
|IRM|8|A|

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||||||||
|---|---|---|---|---|---|---|
|Dim.|Millimeter|Inches|
|Min.|Max.|Min.|Max.|
|A|4.82|5.13|.190|.202|
|A1|2.54|2.89|.100|.114|
|A2|2.00|2.10|.079|.083|
|b|1.12|1.42|.044|.056|
|b1|2.39|2.69|.094|.106|
|b2|2.90|3.09|.114|.122|
|c|0.53|0.83|.021|.033|
|D|25.91|26.16|1.020|1.030|
|E|19.81|19.96|.780|.786|
|e|5.46 BSC|.215 BSC|
|J|0.00|0.25|.000|.010|
|K|0.00|0.25|.000|.010|
|L|20.32|20.83|.800|.820|
|L1|2.29|2.59|.090|.102|
|P|3.17|3.66|.125|.144|
|Q|6.07|6.27|.239|.247|
|Q1|8.38|8.69|.330|.342|
|R|3.81|4.32|.150|.170|
|R1|1.78|2.29|.070|.090|
|S|6.04|6.30|.238|.248|
|T|1.57|1.83|.062|.072|
|4,835,592|4,881,106|5,017,508|5,049,961|5,187,117|5,486,715|6,306,728B1|
|4,850,072|4,931,844|5,034,796|5,063,307|5,237,481|5,381,025|

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Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Updated at April 27, 2026

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