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IXFK24N100Q3
Power MOSFET, Q3-Class, N Channel, 1 kV, 24 A, 0.44 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.44ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Power
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HiPerFET
- Qualification: -
- Power Dissipation: 1kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 24A
- Drain Source On State Resistance: 0.44ohm
- Gate Source Threshold Voltage Max: 6.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 15.53 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **Q3-Class IXFK24N100Q3 HiperFET[TM] IXFX24N100Q3 Power MOSFET** |**Q3-Class**|**Q3-Class**|**IXFK24N100Q3**|**IXFK24N100Q3**|**IXFK24N100Q3**|**VDSS**|**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**|**= 1000V**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |**HiperFET[TM]**||**IXFX24N100Q3**|||**ID25**|**= 24A**||**= 24A**||||| |**Power MOSFET**|**Power MOSFET**||||**RDS(on)**|**440m**||**440m**||||| |||||D|**trr**|**300ns**||**300ns**||||| |N-Channel Enhancement Mode||||G||||||||| |Avalanche Rated|||||**TO-264**|||||||| |Fast Intrinsic Rectifier||||S|**(IXFK)**|||||||| ||||||G|||||||| |**Symbol**|**Test Conditions**||**Maximum Ratings**||S<br>D|||||||| |**VDSS**|TJ = 25C to 150C||1000|V|||||Tab|||| |**VDGR**|TJ = 25C to 150C, RGS= 1M||1000|V||||||||| |**VGSS**<br>**VGSM**<br>**ID25**|Continuous<br>Transient<br>TC = 25C||30<br>40<br>24|V<br>V<br>A|**PLUS247**<br>**(IXFX)**|||||||| |**IDM**|TC = 25C, Pulse Width Limited by TJM||60|A||||||||| |**IA**|TC = 25C||24|A|G|||||||| |**EAS**|TC = 25C||2|J|D|S|||Tab|||| |**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C||50|V/ns|G = Gate||D = Drain|D = Drain|D = Drain|D = Drain||| |**PD**|TC = 25C||1000|W|S = Source||Tab = Drain||Tab = Drain|Tab = Drain||| |**TJ**|||-55 ... +150|C||||||||| |**TJM**|||150|C||||||||| |**Tstg**|||-55 ... +150|C|**Features**|||||||| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering 300<br>Plastic Body for 10s<br>260 °C||Maximum Lead Temperature for Soldering 300<br>260 °C|°C<br>260 °C|Low Intrinsic Gate Resistance<br>Low Package Inductance|||||||| |**Md**|Mounting Torque (TO-264)||1.13/10|Nm/lb.in.|Fast Intrinsic Rectifier|||||||| |**FC**|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.|Low RDS(on)and Q||and QG|||||| |**Weight**|TO-264||10|g||||||||| ||PLUS247||6|6g|**Advantages**|**Advantages**|**Advantages**|||||| ## **Advantages** - High Power Density - Easy to Mount Space Savings |(T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**<br>~~||~~|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA 1000<br>~~|~~<br>~~|~~|~~||~~<br>~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA 3.5 6.5 V<br>~~|~~<br>~~|~~<br>~~|~~|= 4mA 3.5 6.5 V<br>~~| |~~<br>~~|~~<br>~~||~~|= 4mA 3.5 6.5 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>~~|~~<br>~~|~~|<br>~~|~~<br>~~||~~|200 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>1.5 mA<br>~~|~~<br>~~|~~|25<br>1.5 mA<br>~~| |~~<br>~~_~~<br>~~||~~|25<br>A<br>1.5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>~~|~~|440 m<br>~~||~~|440 m| > DC-DC Converters - Switch-Mode and Resonant-Mode - Power Supplies DC Choppers Temperature and Lighting Controls DS100393A(1/20) © 2020 IXYS CORPORATION, All Rights Reserved **IXFK24N100Q3 IXFX24N100Q3** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1 14|24|S| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|7200<br>590<br>50|pF<br>pF<br>pF| |**RGi**<br>Gate Input Resistance<br>|0.18|| |||| |**td(on)**<br> <br>**t**r<br> <br>**td(off)**<br> <br>**t**f<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|38<br>24<br>45<br>14|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Q**<br>|140<br>47<br>60|nC<br>nC<br>nC| |**gd**<br>||| |**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.125C/W<br>C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**| |**IS**<br>VGS= 0V||24 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||96 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= 12A, -di/dt = 100A/s<br>VR= 100V, VGS= 0V|<br>1.9<br>12.4|300 ns<br>C<br> A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFK24N100Q3 IXFX24N100Q3** **==> picture [524 x 626] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>24<br>VGS = 10V 50 VGS = 10V<br>20<br>8V 40<br>16<br>30 8V<br>12<br>20<br>8<br>7V<br>4 10<br>7V<br>6V<br>0 0 6V<br>0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C Fig. 4. RDS(on) Normalized to ID = 12A Value vs.<br>Junction Temperature<br>24 3.4<br>VGS = 10V 3.0 VGS = 10V<br>20<br>2.6<br>7V<br>16 I D = 24A<br>2.2<br>I D = 12A<br>12 1.8<br>1.4<br>8<br>1.0<br>6V<br>4<br>0.6<br>5V<br>0 0.2<br>0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>2.8 28<br>2.6 VGS = 10V<br>T J = 125 [o] C 24<br>2.4<br>20<br>2.2<br>2.0<br>16<br>1.8<br>12<br>1.6<br>1.4 TJ = 25 o C 8<br>1.2<br>4<br>1.0<br>0.8 0<br>0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved **IXFK24N100Q3 IXFX24N100Q3** **==> picture [517 x 417] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>50 60<br>45 VDS = 20V VDS = 20V TJ = - 40 o C<br>50<br>40<br>35<br>40 25 o C<br>30<br>25 30<br>20 TJ = 125 o C 125 [o] C<br>25 [o] C 20<br>15<br>- 40 o C<br>10<br>10<br>5<br>0 0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 20 25 30 35 40 45 50<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>80 16<br>70 14 VDS = 500V<br> I D = 12A<br>60 12 I G = 10mA<br>50 10<br>40 8<br>TJ = 125oC<br>30 6<br>TJ = 25 [o] C<br>20 4<br>10 2<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 150 200<br>VSD - Volts QG - NanoCoulombs<br> - Amperes - Siemens<br>ID gf s<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br> **==> picture [524 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 100<br>f = 1 MHz RDS(on) Limit<br>Ciss 25µs<br>10,000<br>10 100µs<br>1,000 Coss<br>1<br>1ms<br>100 o<br>Crss TJ = 150 C<br>TC = 25 o C<br>Single Pulse<br>10 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFK24N100Q3 IXFX24N100Q3** **Fig. 13. Maximum Transient Thermal Impedance** **==> picture [511 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Fig. 13. Maximum Transient Thermal Impedance<br>0.3 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_24N100Q3(R8) 10-12-11 **IXFK24N100Q3 IXFX24N100Q3** **==> picture [185 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 Outline<br>D<br>E B A<br>— er<br>Sn Q S<br>0R Q1<br>D<br>| Fr<br>0R1 UTP q—<br>1 2 3 L1<br>C<br>—<br>L FS A1 L<br>| J M C A M<br>b1 Neto b oe c<br>b2<br>e<br>ba 0P1 1 = Gate<br>2,4 = Drain<br>C S BACK SIDE 3 = Source<br>5 ar A<br>4 0P K M D B M<br>[ I i<br>**----- End of picture text -----**<br> ## **PLUS247[TM] Outline** **==> picture [180 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>A2 E Q E1<br>7 t— —ip 4<br>i-——J D2 :<br>R<br>| © -!<br>D<br>4<br>1 2 3<br>L1<br>TTT TT<br>r<br>L<br>A1 b e<br>C 3 PLCS b2 2 PLCS 2 PLCS<br>ME b4 HO<br>1 = Gate<br>2,4 = Drain<br>3 = Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFK24N100Q3 IXFX24N100Q3** sis Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved
Updated at April 29, 2026
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