IXFK150N30P3

Power MOSFET, N Channel, 300 V, 150 A, 0.019 ohm, TO-264AA, Through Hole

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 1.3kW
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264AA
Drain Source Voltage Vds: 300V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 150A
Drain Source On State Resistance: 0.019ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	300
Price	12.48 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar3[TM ] HiPerFET[TM] Power MOSFET** 

**==> picture [206 x 319] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =    300V<br>DSS<br>I =    150A<br>D25<br>R      19m <br>DS(on)<br>D t      250ns<br>rr<br>G<br>TO-264<br>(IXFK)<br>S<br>G<br>D<br>S t<br>gs Tab<br>V<br>V<br>PLUS247<br>V<br>V (IXFX)<br>A<br>A<br>A G<br>D<br>J S Tab<br>W<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **IXFK150N30P3 IXFX150N30P3** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratingss**|
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|300|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|300|V|
|**VGSS**<br>**VGSM**|Continuous<br>Transient|20<br>30|V<br>V|
|**ID25**|TC = 25C|150|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|375|A|
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C|75<br>4|A<br>J|
|**PD**|TC = 25C|1300|W|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns|
|**TJ**||-55 ... +150|C|
|**TJM**<br>**Tstg**<br>**TL**|Maximum Lead Temperature for Soldering                     300|150<br>-55 ... +150<br>Maximum Lead Temperature for Soldering                     300|C<br>C<br>°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                               260|1.6 mm (0.062in.) from Case for 10s                               260|°C|
|**Md**<br>**FC**|Mounting Torque  (TO-264)<br>Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|1.13/10<br>Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|Nm/lb.in<br>Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|
|**Weight**|TO-264|10|g|
||PLUS247|6|6g|



## **Features** 

- Dynamic dv/dt Rating 

- Avalanche Rated  Fast Intrinsic Diode  Low QG  Low R DS(on) 

- Low Drain-to-Tab Capacitance  Low Package Inductance 

## **Advantages** 

|(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 3mA                                        300|~~—_~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 8mA                                       3.0|5.0<br>~~_~~|5.0<br>V|
|**IGSS**<br>VGS =20V, VDS= 0V|<br>~~-~~|200<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>1    mA|25<br>1    mA<br>~~-~~|25<br>A<br>1    mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|19   m|19   m|



- Easy to Mount 

- Space Savings 

## **Applications** 

- DC-DC Converters 

- Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  Uninterrupted Power Supplies  AC Motor Drives  High Speed Power Switching Applications 

© 2020 IXYS CORPORATION, All Rights Reserved 

DS100478B(1/20) 

## **IXFK150N30P3 IXFX150N30P3** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**|**Symbol**<br>**Test Conditions                                            Characteristic Values**|**Symbol**<br>**Test Conditions                                            Characteristic Values**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 10V, ID= 60A, Note 1                         65|110|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|12.1<br>1910<br>40|nF<br>pF<br>pF|
|**RGi**Gate Input Resistance|1.0||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|44<br>30<br>74<br>12|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|197<br>70<br>65|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.096C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**IS**<br>VGS = 0V|||150<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|||600     A|
|**VSD**<br>IF= 100A , VGS= 0V, Note 1|||1.5<br>V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br> <br>IF= 75A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V|<br>2.9<br>23.0|250     ns<br>µC<br>A|
|||||



Note 1. Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFK150N30P3 IXFX150N30P3** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>300<br>140 VGS = 10V VGS = 10V<br>         9V            9V<br>250<br>120 8V<br>100 200<br>8V<br>80<br>7V 150<br>60<br>100<br>40 7V<br>50<br>20<br>6V<br>6V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


**==> picture [539 x 430] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>3.0<br>140 VGS = 10V V GS = 10V<br>       8V<br>2.6<br>120<br>2.2<br>100 I D = 150A<br>7V<br>80 1.8 I  D = 75A<br>1.4<br>60<br>40 6V 1.0<br>20 0.6<br>5V<br>0 0.2<br>0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.2 160<br>VGS = 10V<br>140<br>2.8<br>120<br>TJ = 125ºC<br>2.4<br>100<br>2.0 80<br>60<br>1.6<br>TJ = 25 º C 40<br>1.2<br>20<br>0.8 0<br>0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXFK150N30P3 IXFX150N30P3** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>200<br>180<br>TJ = 125ºC<br>160         25ºC<br>- 40ºC<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>180<br>TJ = - 40ºC<br>160<br>140<br>25ºC<br>120<br>125ºC<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  V DS = 150V<br> I D = 75A D = 75A = 75A<br>8<br> I G = 10mA    G = 10mA    = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>10<br>300 9  V DS = 150V<br> I D = 75A D = 75A = 75A<br>8<br>250  I G = 10mA    G = 10mA    = 10mA<br>7<br>200 6<br>5<br>150<br>4<br>100 3<br>TJ = 125ºC<br>2<br>50 TJ  = 25ºC<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 200<br>VSD - Volts QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 1000<br>f = 1 MHz  RDS(on) Limit<br>Ciss<br>10,000 25µs<br>100<br>100µs<br>1,000 Coss<br>10<br>100<br>Crss TJ = 150 º C 1ms<br>TC = 25ºC<br>Single Pulse<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Volts<br> - Amperes GS<br>IS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFK150N30P3 IXFX150N30P3** 

**Fig. 13. Maximum Transient Thermal Impedance** 

1 

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**----- Start of picture text -----**<br>
           Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.2<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_150N30P3(W9) 6-18-12 

## **IXFK150N30P3 IXFX150N30P3** 

**==> picture [190 x 240] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-264 Outline<br>D<br>— E ES B A _<br>Q S<br>Cd"<br>0R<br>Q1<br>D<br>1 in |<br>0R1<br>1 2 3 L1<br>C<br>—<br>Fa<br>L A1<br>_<br>| J M C A M<br>b1 ECL b c<br>b2<br>e<br>§=——5 0P1 1  = Gate<br>2,4  = Drain<br>BACK SIDE 3  =  Source<br>9 (are A<br>4 I 0P K M D B M<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 PLUS247 [TM]  Outline<br>A<br>A2 E Q E1<br>+S I— _—+, 4<br>i-— D2 | i +<br>R<br>©<br>j<br>D<br>4<br>1 2 3<br>L1<br>r<br>L<br>A1 b e<br>C HE | 3 PLCS b2 2 PLCS 2 PLCS<br>b4 IH<br>1  = Gate<br>2,4  = Drain<br>3  =  Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFK150N30P3 IXFX150N30P3** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION, All Rights Reserved

Updated at April 27, 2026

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