IXFK140N30P

Power MOSFET, PolarFET, N Channel, 300 V, 140 A, 0.024 ohm, TO-264, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 1.04kW
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-264
Drain Source Voltage Vds: 300V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 140A
Drain Source On State Resistance: 0.024ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	11.74 €
Current stock	200+
Lead time	30 days

Datasheet

## **Polar[TM] Power MOSFET HiPerFET[TM]** 

## **IXFK140N30P IXFX140N30P** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode 

|**Symbol**|**Test Conditions**||**Maximum Ratings**||
|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C||300|V|
|**VDGR**|TJ = 25°C to 150°C, R|C, RGS= 1MΩ|300|V|
|**VGSS**|Continuous||±20|V|
|**VGSM**|Transient||±30|V|
|**ID25**|TC = 25°C||140|A|
|**ILRMS**|Lead Current Limit, RMS||75|A|
|**IDM**|TC = 25°C, pulse width limited by TJM||300|A|
|**IA**|TC = 25°C||70|A|
|**EAS**|TC = 25°C||5|J|
|**dV/dt**|IS<br>≤IDM, VDD ≤VDSS, T|, TJ ≤150°C|20|V/ns|
|**PD**|TC = 25°C||1040|W|
|**TJ**|||-55 ... +150|°C|
|**TJM**|||150|°C|
|**Tstg**|||-55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from case for 10s||300|°C|
|**TSOLD**|Plastic body for 10s||260|°C|
|**Md**|Mounting  force|(PLUS247)                 20..120/4.5..27                N/lb.|(PLUS247)                 20..120/4.5..27                N/lb.|(PLUS247)                 20..120/4.5..27                N/lb.|
|Mounting  torque|Mounting  torque|(TO-264)|1.13/10         Nm/lb.in.||
|**Weight**|PLUS247||6|g|
||TO-264||10                     g|10                     g|



**V =    300V DSS I =    140A D25 R ≤ 24m Ω DS(on) t ≤ 200ns rr** 

## **TO-264  (IXFK)** 

**==> picture [105 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>D<br>S (TAB)<br>**----- End of picture text -----**<br>


## **PLUS247  (IXFX)** 

**==> picture [143 x 36] intentionally omitted <==**

**----- Start of picture text -----**<br>
(TAB)<br>G  =  Gate   D      =  Drain<br>S  =  Source   TAB  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- Fast intrinsic diode 

- Avalanche Rated 

- Low RDS(ON) and QG 

- Low package inductance 

## **Advantages** 

Easy to mount Space savings High power density 

## **Applications** 

- DC-DC coverters 

|(T= 25C, unless otherwise specified)<br>**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|**Min.    Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.    Typ.     Max.**<br>~~|~~|**Min.    Typ.     Max.**<br>~~|~~|**Min.    Typ.     Max.**|
|**BVDSS**<br>VGS = 0V, ID=  3mA<br>300<br>~~|~~<br>~~|~~|~~|~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID=  8mA<br>3.0                  5.0     V<br>~~|~~<br>~~|~~<br>~~|~~|3.0                  5.0     V<br>~~|~~<br>~~||~~<br>~~|~~|3.0                  5.0     V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±<br>~~|~~<br>~~|~~|±<br>~~| |~~<br>~~|~~|±200 nA|
|**IDSS**<br>VDS =  VDSS<br>25<br>VGS =  0V                                      TJ= 125°C<br>1<br>~~|~~<br>~~|~~|25<br>1<br>~~|~~<br>~~|~~|25μA<br>1 mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>20            24   m<br>~~|~~|20            24   m<br>~~|~~|20            24   mΩ|



- Battery chargers 

- Switched-mode and resonant-mode 

- power supplies 

- DC choppers 

- AC and DC motor control 

- Uninterrupted power supplies 

- High speed power switching 

- applications 

DS99557F(5/08) 

© 2008 IXYS CORPORATION,  All rights reserved 

## **IXFK140N30P IXFX140N30P** 

|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|**Min.      Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.     Max.**<br>~~|~~|**Min.      Typ.     Max.**<br>~~||~~|**Min.      Typ.     Max.**<br>~~|~~|
|**gfs**<br>VDS=  20V, ID= 0.5 • ID25,  Note 1                      50           90<br>~~|~~|,  Note 1                      50           90<br>~~||~~|S<br>~~|~~|
|**Ciss**<br>14.8<br>**Coss**<br>VGS= 0V, VDS=  25V, f = 1MHz<br>1830<br>**Crss**<br>55<br>~~|~~|14.8<br>1830<br>55<br>~~| |~~|nF<br>pF<br>pF<br>~~|~~|
|**td(on)**<br> <br>**tr**<br>30<br>**td(off)**<br>100<br>**tf**<br>20<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|30<br>30<br>100<br>20|ns<br>ns<br>ns<br>ns|
|**Q**<br>185|185|nC|
|**Qg(on)**<br>185<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>72<br>**Qgd**<br>60|185<br>72<br>60|nC<br>nC<br>nC|
|**RthJC**<br>0.12<br>**RthCS**<br>0.15|0.12<br>0.15|0.12°C/W<br>°C/W|



**TO-264 (IXFK) Outline** 

## **Source-Drain Diode** 

|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|**IS**<br>VGS= 0V|140     A|140     A|
|**ISM**<br>Repetitive, pulse width limited by TJM|560     A|560     A|
|**VSD**<br>IF= 70A, VGS= 0V,  Note 1|1.3     V|1.3     V|
|**SD**<br>F= 70A, VGS= 0V,  Note 1<br>**trr**<br>200   nS<br>**QRM**<br>0.6<br>**IRM**6.0<br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V<br>\|200   nS<br>0.6<br>6.0|200   nS<br>μC<br> A|



**PLUS 247[TM] (IXFX) Outline** R ~~EY o=~~ 

Note 1:  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

|Dim.<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A2<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>1.14<br>b1<br>1.91<br>b2<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>5.59<br>6.20<br>.220 0.244<br>R<br>4.32<br>4.83<br>.170<br>.190|||



IXYS reserves the right to change limits, test conditions,  and  dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFK140N30P IXFX140N30P** 

## **Fig. 1. Output Characteristics @ 25ºC** 

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**----- Start of picture text -----**<br>
140<br>VGS = 10V<br>        8V<br>120<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20 5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ 125ºC** 

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**----- Start of picture text -----**<br>
140<br>V GS = 10V<br>        8V<br>120<br>        7V<br>100<br>80<br>6V<br>60<br>40<br>5V<br>20<br>0<br>0 1 2 3 4 5 6 7 8<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 70A Value<br>vs. Drain Current<br>3.0<br>2.8  V GS = 10V<br>2.6 TJ = 125ºC<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>TJ = 25ºC<br>1.0<br>0.8<br>0 40 80 120 160 200 240 280<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [253 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>V GS = 10V<br>240          8V<br>200<br>160 7V<br>120<br>6V<br>80<br>40<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 70A Value<br>vs. Junction Temperature<br>3.2<br> V GS = 10V<br>2.8<br>2.4<br>2.0 I D = 140A<br>I D = 70A<br>1.6<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


## **Fig. 6. Maximum Drain Current vs. Case Temperature** 

**==> picture [255 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>80 External Lead Current Limit<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

## **IXFK140N30P IXFX140N30P** 

## **Fig. 7. Input Admittance** 

**==> picture [253 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>160<br>140<br>120<br>100 TJ = 125ºC<br>         25ºC<br>       - 40ºC<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Forward Voltage Drop of Intrinsic Diode** 

**==> picture [252 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>250<br>200<br>150<br>100 TJ = 125ºC<br>TJ  = 25ºC<br>50<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [250 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>C iss<br>10,000<br>1,000 Coss<br>100<br>f = 1 MHz  C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


## **Fig. 8. Transconductance** 

**==> picture [252 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
140<br>120<br>100 TJ = - 40ºC<br>          25ºC<br>80         125ºC<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [253 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9  VDS = 150V<br> I D = 70A<br>8  I  G  = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [19 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000<br>**----- End of picture text -----**<br>


**==> picture [254 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
TJ = 150ºC<br>TC = 25ºC<br>RDS(on) Limit  Single Pulse<br>25µs<br>100<br>100µs<br>1ms<br>10ms<br>DC<br>10<br>10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

**IXFK140N30P IXFX140N30P** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

**==> picture [516 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

IXYS REF: F_140N30P(93)5-13-08-B 

**==> picture [157 x 46] intentionally omitted <==**

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Updated at April 29, 2026

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