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IXFK100N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 100 A, 0.03 ohm, TO-264P, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HiPerFET
- Qualification: -
- Power Dissipation: 1.04kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264P
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 0.03ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 9.7 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class HiPerFET[TM] Power MOSFET** ## **IXFK100N65X2 IXFX100N65X2** **V = 650V DSS I = 100A D25** **R 30m DS(on)** N-Channel Enhancement Mode |Avalanche Rated|Avalanche Rated|||||||| |---|---|---|---|---|---|---|---|---| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>650<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>650<br>V<br>**VGSS**<br>Continuous<br>30<br>V<br>**PLUS247 (IXFX)**<br>**TO-264 (IXFK)**<br>S<br>G<br>D<br>Tab<br>Fast Intrinsic Diode<br>~~nd~~||||||||| |**VGSM**<br>Transient<br>40<br>V<br>**ID25**<br>TC = 25C<br>100<br>A<br>**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>200<br>A<br>**IA**<br>TC = 25C<br>15<br>A<br>**EAS**<br>TC = 25C<br>3.5<br>J<br>**PD**<br>TC = 25C<br>1040<br>W<br>Tab<br>G<br>D S<br>~~De~~<br>~~ee~~||||||||| |**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C 50 V/ns|150°C 50 V/ns|150°C 50 V/ns|G = Gate<br>D = Drain|D = Drain|||| |**TJ**||-55 ... +150|C|S = Source<br>Tab = Drain|Tab = Drain|||| |**TJM**||150|C|||||| |**Tstg**||-55 ... +150|C|||||| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C|**Features**||||| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C|International Standard Packages||International Standard Packages||| |**Md**|Mounting Torque (TO-264)|1.13/10|Nm/lb.in|Low QG||||| |**FC**<br>**Weight**|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb<br>TO-264|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb<br>10|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb<br>g|Avalanche Rated<br>Low Package Inductance||||| ||PLUS247|6|6g|||||| ## **Advantages** - High Power Density |**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA 650||V| |**VGS(th)**<br>VDS = VGS, ID= 4mA 3.5|5.0|5.0<br>V| |**IGSS**<br>VGS =30V, VDS= 0V||100<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>5 mA|50<br>5 mA|50<br>A<br>5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|30 m|30 m| - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls © 2016 IXYS CORPORATION, All Rights Reserved DS100684C(12/16) **IXFK100N65X2 IXFX100N65X2** |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**| |---|---| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 40 68 S|, Note 1 40 68 S| |**RGi**<br>Gate Input Resistance<br>0.7|0.7| |**Ciss**<br>10.8<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>6000<br>**Crss**<br>2.6|10.8<br>6000<br>2.6| |**Co(er)**<br>365<br>**Co(tr)**<br>1500 pF<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|365<br>1500 pF| |**td(on)**<br>37<br>**tr**<br>26<br>**td(off)**<br>90<br>**tf**<br>13<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)|37<br>26<br>90<br>13| |**Qg(on)**<br>183<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>60<br>**Qgd**<br>62|183<br>60<br>62<br>~~a~~| |**RthJC**<br>0.12<br>**RthCS**<br>0.15|0.12<br>0.15<br>~~a~~| **==> picture [138 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 Outline<br>| E Tt A<br>Q S<br>R Q1<br>D<br>R1<br>|. 1 2 3 L1<br>L<br>c<br>b1 | | |et b2 b =| A1<br>x2 o e e<br>4 0P<br>Terminals: 2,4 = Drain 1 = Gate BACK SIDE<br> 3 = Source<br>**----- End of picture text -----**<br> ## **PLUS247[TM] Outline** ## **Source-Drain Diode** |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---| |**IS**<br>VGS = 0V|100| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|400 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.4| |**trr**<br>200 ns<br>**QRM**<br>1.7<br>**IRM**<br>17.2<br>IF= 50A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V|200 ns<br>1.7<br>17.2| **==> picture [147 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> A A2 E Q E1<br>J | R i-—qT_ = D2 jj1<br>D D1<br>4<br>1 2 3<br>L1<br>L<br>A1 b e<br>C 3 PLCS b2 2 PLCS 2 PLCS<br>b4<br>Terminals: 1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFK100N65X2 IXFX100N65X2** **==> picture [263 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>100<br>V GS = 10V<br>90<br> 8V<br>80<br>7V<br>70<br>60<br>50<br>40 6V<br>30<br>20<br>10 5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [263 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>240<br>VGS = 10V<br> 9V<br>200<br>8V<br>160<br>120<br>7V<br>80<br>6V<br>40<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [531 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 50A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>100 3.4<br>V GS = 10V<br>90 8V 3.0 VGS = 10V<br>7V<br>80<br>2.6<br>70<br>6V<br>2.2 I D = 100A<br>60<br>50 1.8<br>I D = 50A<br>40 1.4<br>30<br>5V 1.0<br>20<br>0.6<br>10<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>VGS = 10V<br>4.0 1.2<br>3.5 T J = 125ºC 1.1 BV DSS<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>T J = 25ºC V GS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 20 40 60 80 100 120 140 160 180 200 220 240 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved **IXFK100N65X2 IXFX100N65X2** **==> picture [538 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>110 140<br>100<br>120<br>90<br>80 100<br>70 TJ = 125ºC<br> 25ºC<br>60 80 - 40ºC<br>50<br>60<br>40<br>30 40<br>20<br>20<br>10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>TC - Degrees Centigrade VGS - Volts<br>Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>140 200<br>T J = - 40ºC 180<br>120<br>160<br>100 25ºC 140<br>120<br>80<br>125ºC<br>100<br>60<br>80<br>TJ = 125ºC<br>40 60<br>40 TJ = 25ºC<br>20<br>20<br>0 0<br>0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V<br> I D = 50A<br>8 10,000<br> I G = 10mA Ciss<br>6 1,000<br>4 100 Coss<br>2 10<br>f = 1 MHz<br>Crss<br>0 1<br>0 20 40 60 80 100 120 140 160 180 200 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Amperes - Amperes<br>ID ID<br> - Siemens<br>gf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFK100N65X2 IXFX100N65X2** **Fig. 13. Output Capacitance Stored Energy** **Fig. 14. Forward-Bias Safe Operating Area** **==> picture [529 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 90 1000<br>80 R DS(on) Limit<br>70<br>100<br>25µs<br>60<br>100µs<br>50<br>10<br>40<br>30<br>1 1ms<br>20 TJ = 150ºC<br> TC = 25ºC<br>10<br> Single Pulse<br>10ms<br>0 0.1<br>0 100 200 300 400 Fig. 15. Maximum Transient Thermal Impedance 500 600 10 100 1,000<br>1 VDS - Volts VDS - Volts<br> - MicroJoules - Amperes<br>OSS ID<br>E<br>**----- End of picture text -----**<br> **==> picture [525 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 15. Maximum Transient Thermal Impedance<br>0.3 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N65X2(X8-S602) 12-14-15 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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