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IXFH96N20P
Power MOSFET, N Channel, 200 V, 96 A, 0.024 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: PolarHT
- Qualification: -
- Power Dissipation: 600W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 96A
- Drain Source On State Resistance: 0.024ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.35 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**PolarHT[TM ] HiPerFET IXFH 96N20P V = 200 V DSS Power MOSFET IXFT 96N20P ID25 = 96 A IXFV 96N20P R ≤ 24 m Ω DS(on)** N-Channel Enhancement Mode **trr ≤ 200 ns** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-247 (IXFH)**|**TO-247 (IXFH)**|||| |---|---|---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C||200||V|||||| |**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ||200||V|||||| |**VGS**<br>**VGSM**|Continuous<br>Transient||±20<br>±30||V<br>V||G D S|(TAB)||| |**ID25**|TC = 25°C||96||A|||||| |**ID(RMS)**|External lead current limit||75||A|||||| |**IDM**|TC = 25°C, pulse width limited by TJM||225||A|**TO-268 (IXFT)**||||| |**IAR**<br>**EAR**<br>**EAS**<br>**dv/dt**|TC = 25°C<br>TC = 25°C<br>TC = 25°C<br>IS<br>≤IDM, di/dt≤100 A/µs, V<br>TJ ≤150°C, RG= 4Ω|s, VDD ≤VDSS,|60<br>50<br>1.5<br>10||A<br>mJ<br>J<br>V/ns|G<br>S<br>**PLUS220 (IXFV)**_||||D (TAB)| |**PD**|TC = 25°C||600||W|||||| |**TJ**|||-55 ... +175||°C|||||| |**TJM**|||175||°C|||||| |**Tstg**|||-55 ... +150||°C||G|||| |**TL**|1.6 mm (0.062 in.) from case for 10 s||300||°C||S<br>D|D (TAB)||| |**TSOLD**|Plastic body for 10s||260||°C|||||| |**Md**|Mounting torque<br>(TO-247)||1.13/10|Nm/lb.in.|||G = Gate|D = Drain||| |**Weight**|TO-220||4||g||S = Source|TAB = Drain||| ||TO-247||6||g|||||| ||TO-268||5||g|**Features**||||| |**Symbol**|**Test Conditions**||**Characteristic Values**|||l|Fast Intrinsic Diode|||| |(TJ= 25°C, unless otherwise specified)|||**Min. Typ.**|**Max.**||l|International standard packages|||| |**BVDSS**<br>**VGS(th)**|VGS = 0 V, ID= 250µA<br>VDS = VGS, ID= 4 mA||200<br>2.5<br>~~_~~|5.0|V<br>V|l <br>l|Unclamped Inductive Switching (UIS)<br>rated<br> Low package inductance|||| |**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS =±20 VDC, VDS= 0<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 150°C<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %||±100<br>25<br>250<br>24<br>~~_-_~~||nA<br>µA<br>µA<br>mΩ|- easy to drive and to protect<br>**Advantages**<br>l<br>Easy to mount<br>l<br>Space savings<br>l<br>High power density||||| - l Fast Intrinsic Diode l International standard packages l Unclamped Inductive Switching (UIS) rated - l Low package inductance - easy to drive and to protect DS99222E(02/06) © 2006 IXYS All rights reserved **IXFH 96N20P IXFT 96N20P IXFV 96N20P** |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**<br>**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>40<br>52<br>S<br>**Ciss**<br>4800<br>pF<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>1020<br>pF<br>**Crss**<br>270<br>pF<br>**td(on)**<br>28<br>ns<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>30<br>ns<br>**td(off)**<br>RG= 4Ω(External)<br>75<br>ns<br>**tf**<br>30<br>ns<br>**Qg(on)**<br>145<br>nC<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>30<br>nC<br>**Qgd**<br>80<br>nC<br>**RthJC**<br>0.25°C/W<br>**RthCS**<br>(TO-247)<br>0.21<br>°C/W<br>**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS= 0 V<br>96<br>A<br>**ISM**<br>Repetitive<br>240<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>**trr**<br>IF= 25 A<br>120<br>200<br>ns<br>**QRM**<br>-di/dt = 100 A/µs<br>0.7<br>µC<br>**IRM**<br>VR= 100 V, VGS= 0 V<br>7<br>A<br>**TO-268 (IXFT) Outline**<br>**TO-247 (IXFH) Outline**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**<br>**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>40<br>52<br>S<br>**Ciss**<br>4800<br>pF<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>1020<br>pF<br>**Crss**<br>270<br>pF<br>**td(on)**<br>28<br>ns<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>30<br>ns<br>**td(off)**<br>RG= 4Ω(External)<br>75<br>ns<br>**tf**<br>30<br>ns<br>**Qg(on)**<br>145<br>nC<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>30<br>nC<br>**Qgd**<br>80<br>nC<br>**RthJC**<br>0.25°C/W<br>**RthCS**<br>(TO-247)<br>0.21<br>°C/W<br>**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS= 0 V<br>96<br>A<br>**ISM**<br>Repetitive<br>240<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>**trr**<br>IF= 25 A<br>120<br>200<br>ns<br>**QRM**<br>-di/dt = 100 A/µs<br>0.7<br>µC<br>**IRM**<br>VR= 100 V, VGS= 0 V<br>7<br>A<br>**TO-268 (IXFT) Outline**<br>**TO-247 (IXFH) Outline**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**<br>**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>40<br>52<br>S<br>**Ciss**<br>4800<br>pF<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>1020<br>pF<br>**Crss**<br>270<br>pF<br>**td(on)**<br>28<br>ns<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>30<br>ns<br>**td(off)**<br>RG= 4Ω(External)<br>75<br>ns<br>**tf**<br>30<br>ns<br>**Qg(on)**<br>145<br>nC<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>30<br>nC<br>**Qgd**<br>80<br>nC<br>**RthJC**<br>0.25°C/W<br>**RthCS**<br>(TO-247)<br>0.21<br>°C/W<br>**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS= 0 V<br>96<br>A<br>**ISM**<br>Repetitive<br>240<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>**trr**<br>IF= 25 A<br>120<br>200<br>ns<br>**QRM**<br>-di/dt = 100 A/µs<br>0.7<br>µC<br>**IRM**<br>VR= 100 V, VGS= 0 V<br>7<br>A<br>**TO-268 (IXFT) Outline**<br>**TO-247 (IXFH) Outline**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**<br>**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>40<br>52<br>S<br>**Ciss**<br>4800<br>pF<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>1020<br>pF<br>**Crss**<br>270<br>pF<br>**td(on)**<br>28<br>ns<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>30<br>ns<br>**td(off)**<br>RG= 4Ω(External)<br>75<br>ns<br>**tf**<br>30<br>ns<br>**Qg(on)**<br>145<br>nC<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>30<br>nC<br>**Qgd**<br>80<br>nC<br>**RthJC**<br>0.25°C/W<br>**RthCS**<br>(TO-247)<br>0.21<br>°C/W<br>**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS= 0 V<br>96<br>A<br>**ISM**<br>Repetitive<br>240<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>**trr**<br>IF= 25 A<br>120<br>200<br>ns<br>**QRM**<br>-di/dt = 100 A/µs<br>0.7<br>µC<br>**IRM**<br>VR= 100 V, VGS= 0 V<br>7<br>A<br>**TO-268 (IXFT) Outline**<br>**TO-247 (IXFH) Outline**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Min.**<br>**Typ.**<br>**Max.**<br>**gfs**<br>VDS= 10 V; ID= 0.5 ID25, pulse test<br>40<br>52<br>S<br>**Ciss**<br>4800<br>pF<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>1020<br>pF<br>**Crss**<br>270<br>pF<br>**td(on)**<br>28<br>ns<br>**tr**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= ID25<br>30<br>ns<br>**td(off)**<br>RG= 4Ω(External)<br>75<br>ns<br>**tf**<br>30<br>ns<br>**Qg(on)**<br>145<br>nC<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>30<br>nC<br>**Qgd**<br>80<br>nC<br>**RthJC**<br>0.25°C/W<br>**RthCS**<br>(TO-247)<br>0.21<br>°C/W<br>**Source-Drain Diode Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS= 0 V<br>96<br>A<br>**ISM**<br>Repetitive<br>240<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, duty cycle d≤2 %<br>**trr**<br>IF= 25 A<br>120<br>200<br>ns<br>**QRM**<br>-di/dt = 100 A/µs<br>0.7<br>µC<br>**IRM**<br>VR= 100 V, VGS= 0 V<br>7<br>A<br>**TO-268 (IXFT) Outline**<br>**TO-247 (IXFH) Outline**|**TO-247 (IXFH) Outline**<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>Terminals: 1 - Gate 2 - Drain<br>3 - Source TAB - Drain<br>1 2 3<br>Ar<br>E<br>A2<br>ore aly<br>4_' Q<br>cl<br>os<br>!7 array<br>|<br>oP<br>| a~~an~~<br>ulHh<br>L<br>|<br>oR| |---|---|---|---|---|---| |||||**Source-Drain Diode Characteristic Values**<br>C, unless otherwise specified)<br>**Max.**<br>96<br>A<br>240<br>A<br>1.5<br>V<br>200<br>ns<br>µC<br>A<br>**TO-268 (IXFT) Outline**|e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15 BSC<br>242 BSC| |**IS**<br>VGS= 0 V|||96||| |**ISM**<br>Repetitive|||240||| |**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %|||1.5||**TO-268 (IXFT) Outline**<br>il<br>;| |**trr**<br>IF= 25 A<br>120<br>**QRM**<br>-di/dt = 100 A/µs<br>0.7<br>**IRM**<br>VR= 100 V, VGS= 0 V<br>7|||200||| ||||||ss<br>-<br>—<br>|<br>}| |**PLUS220 (IXFV) Outline**<br>pice<br>eh<br>i<br>L<br>:<br>|<br>|<br>D<br>A<br>WD<br>|<br>|<br>ps<br>TITEL<br>1<br>|<br>]<br>nabs<br>Pale|**PLUS220 (IXFV) Outline**<br>INCHES<br>eh<br>L<br>5<br>|<br>||<br>w<br>|<br>|<br>|<br>i<br>TTT<br>|<br>|<br>13.00<br>]|<br>|<br>Pale<br>be||||| |IXYS reserves the right to chan|||||| **IXFH 96N20P IXFT 96N20P IXFV 96N20P** **==> picture [243 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>100<br>90 V GS = 10V<br> 9V<br>80<br>70<br>60<br>8V<br>50<br>40<br>30 7V<br>20<br>6V<br>10<br>0<br>0 0.5 1 1.5 2 2.5 3<br>V D S - Volts<br>Fig. 3. Output Characteristics<br>@ 150ºC<br>100<br>90 VGS = 10V<br> 9V<br>80<br>70<br>8V<br>60<br>50<br>7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0 1 2 3 4 5 6 7<br>V D S - Volts<br>Fig. 5. RDS(on) Norm alized to<br>0.5 ID25 Value vs. ID<br>4.3<br>4<br>VGS = 10V<br>3.7<br>3.4<br>TJ = 175ºC<br>3.1<br>2.8<br>2.5<br>2.2<br>1.9 TJ = 125ºC<br>1.6<br>1.3<br>1 T J = 25ºC<br>0.7<br>0 25 50 75 100 125 150 175 200 225 250<br>I D - Amperes<br> - Amperes<br>D<br>I<br> - Amperes<br>D<br>I<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [229 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225 VGS = 10V<br>200<br>175 9V<br>150<br>125<br>8V<br>100<br>75<br>7V<br>50<br>25<br>6V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature** **==> picture [232 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2.8 V GS = 10V<br>2.6<br>2.4<br>2.2<br>2<br>I D = 96A<br>1.8<br>1.6 I D = 48A<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Tem perature<br>90<br>External Lead Current Limit<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 96N20P IXFT 96N20P IXFV 96N20P** **Fig. 7. Input Adm ittance** **==> picture [228 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>120<br>100<br>80<br>60<br> TJ = 150ºC<br>40 25ºC<br> -40ºC<br>20<br>0<br>4.5 5 5.5 6 6.5 7 7.5 8 8.5 9<br>V G S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [231 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>TJ = 150ºC<br>50<br>TJ = 25ºC<br>0<br>0.4 0.6 0.8 1 1.2 1.4 1.6<br>V S D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **==> picture [231 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>f = 1MHz<br>C iss<br>1000<br>Coss<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>V DS - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>TJ = -40ºC<br>70 25ºC<br> 150ºC<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175 200<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 100V<br>8 I D = 48A<br>I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 15 30 45 60 75 90 105 120 135 150<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Forw ard-Bias Safe Operating Area** **==> picture [234 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>R DS(on) Limit TTJC = 175ºC= 25ºC<br>25µs<br>100<br>100µs<br>1ms<br>10ms<br>10<br>DC<br>1<br>10 100 1000<br>V D S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 96N20P IXFT 96N20P IXFV 96N20P** **Fig. 13. Maxim um Transient Therm al Resistance** **==> picture [494 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>1 10 100 1000<br>Pulse Width - Milliseconds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved
Updated at April 27, 2026
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