Image not available
Illustrative purposes only
IXFH94N30P3
Power MOSFET, N Channel, 300 V, 94 A, 0.036 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.04kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 94A
- Drain Source On State Resistance: 0.036ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM ] HiperFET[TM] Power MOSFET** ## **IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|| |---|---|---|---|---| |**VDSS**<br>TJ = 25C to 150C<br>300<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>300<br>V<br>~~ee~~||||| |**VGSS**|Continuous|20||V| |**VGSM**|Transient|30||V| |**ID25**|TC = 25C<br>94 A|94 A|94 A|94 A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|235||A| |**IA**|TC = 25C|47||A| |**EAS**|TC = 25C|2.5||J| |**dv/dt**I<br>**PD**|IS IDM, VDD VDSS, TJ 150°C 35 V/ns<br>TC = 25C|150°C 35 V/ns<br>1040|150°C 35 V/ns|150°C 35 V/ns<br>W| |**TJ**||-55 ... +150|C|| |**TJM**||150|C|| |**Tstg**||-55 ... +150|C|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300||°C| |**TSOLD**|Plastic Body for 10s<br>260 °C|260 °C|260 °C|260 °C| |**Md**<br>**Weight**<br>TO-3P|Mounting Torque (TO-247 & TO-3P)<br>1.13 / 10<br>**Weight**TO-268<br>4.0<br>TO-3P<br>5.5|1.13 / 10<br>4.0<br>5.5|Nm/lb.in<br>g<br>g|| |TO-247 6.0 g|TO-247 6.0 g|TO-247 6.0 g|TO-247 6.0 g|TO-247 6.0 g| **V = 300V DSS I = 94A D25 R 36m DS(on)** ## **TO-268 (IXFT)** **==> picture [112 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** - Fast Intrinsic Rectifier - Avalanche Rated - Low RDS(ON) and QG - Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>300|~~—~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.0<br>5.0 V|5.0 V<br>~~—~~<br>~~_~~|5.0 V| |**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~-~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>750|25<br>750<br>~~7~~|25A<br>750A| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>36 m|36 m<br>~~—~~|36 m| > High Power Density - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters - Laser Drivers - AC and DC Motor Drives - Robotics and Servo Controls DS100479B(3/18) © 2018 IXYS CORPORATION, All Rights Reserved ## **IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**| |**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1 40|68|S| |**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5510<br>965<br>25|pF<br>pF<br>pF| |**RGi**<br>Gate Input Resistance<br>|1.2|| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|23<br>19<br>49<br>11|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|102<br>33<br>37|nC<br>nC<br>nC| |**RthJC**<br>**RthCS**<br>(TO-247 & TO-3P)<br>|<br>0.25|0.12 C/W<br>C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**| |**IS**<br>VGS= 0V||94<br>A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||376<br>A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5<br>V| |**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 47A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>15.6 <br>1.4|250 ns<br> A<br>μC| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>100<br>V GS = 10V<br>90 8V<br> 7V<br>80<br>70<br>60<br>6V<br>50<br>40<br>30<br>20<br>5V<br>10<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>220<br>200 VGS = 10V<br> 8V<br>180<br>160<br>7V<br>140<br>120<br>100<br>80 6V<br>60<br>40<br>20 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [538 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 47A Value vs.<br>100 Fig. 3. Output Characteristics @ TJ = 125 [o] C 3.4 Junction Temperature<br>VGS = 10V<br>90 8V VGS = 10V<br>3.0<br> 7V<br>80<br>2.6<br>70 6V I D = 94A<br>2.2<br>60<br>50 1.8 I D = 47A<br>40<br>5V 1.4<br>30<br>1.0<br>20<br>0.6<br>10 4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.8 100<br>3.4 V GS = 10V T J = 125 [o] C<br>80<br>3.0<br>2.6<br>60<br>2.2<br>TJ = 25 [o] C<br>40<br>1.8<br>1.4<br>20<br>1.0<br>0.6 0<br>0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved **IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3** **==> picture [530 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>160 140<br>140 TJ = - 40 [o] C<br>120<br>120<br>TJ = 125 [o] C 100<br> 25 [o] C 25 [o] C<br>100<br> - 40 [o] C<br>80 125 [o] C<br>80<br>60<br>60<br>40<br>40<br>20<br>20<br>0 0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 100 120 140 160<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br> **==> picture [250 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>100 T J = 125 [[o]] C<br>50 TJ = 25J = 25 = 25 [[o]] C<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - VoltsSD - Volts - Volts<br> - Amperes<br>ISS<br>**----- End of picture text -----**<br> **==> picture [79 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 10. Gate Charge<br>**----- End of picture text -----**<br> **==> picture [538 x 403] intentionally omitted <==** **----- Start of picture text -----**<br> 300 10<br>9 VDS = 150V<br>250 I D = 47A<br>8<br> I G = 10mA<br>7<br>200<br>6<br>150 5<br>4<br>100 T J = 125 [[o]] C 3<br>TJ = 25J = 25 = 25 [[o]] C 2<br>50<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 40 50 60 70 80 90 100<br>VSD - VoltsSD - Volts - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 1000<br>f = 1 MHz<br>R DS(on) Limit<br>10,000 Ciss<br>100 25μs<br>1,000 100μs<br>Coss<br>10<br>100<br>T J = 150 [o] C<br>1ms<br>Crss T C = 25 [o] C<br>Single Pulse<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Volts<br> - Amperes GS<br>ISS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3** **Fig. 13. Maximum Transient Thermal Impedance** 1 **==> picture [523 x 254] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.2<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_94N30P3(W8) 6-18-12 **==> picture [212 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> IXFT94N30P3 IXFQ94N30P3<br> IXFH94N30P3<br>**----- End of picture text -----**<br> **==> picture [513 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline TO-3P Outline TO-247 Outline<br>D A<br>E AA2 0P0P1 E 1 A2 A2 A E B 0P O 0K M D B M+<br>L e L2 ce 7 - + + = S i ; ey + im R Ca + S Q [7.] S D2 L [ROSS] +<br>roy eNy D A H | 7 4 : Oe D D1 | O— D) D rLab ? 0P1 / TO D1<br>4<br>iL al | 1 2 3 | 4 1 2 3 4 ixys option<br> L1<br>wa g t o a L1 A 1 C<br>; ~ : L T ES A E1 1<br>4 S L<br>Terminals: ~ 1 - Gate3 - Source 0 X 2,4 - Drain - | o e b2 eee b4 b c eee A1 c tt b2b b4 (Lora. O J M C A M+ 4 e PINS: 1 - Gate 2, 4 - Drain |<br> 3 - Source<br>- PINS: 1 - G ate<br> 2, 4 - Drain<br>- 3 - So ur c e ES MILLIMETERS<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →