IXFH88N30P

Power MOSFET, N Channel, 300 V, 88 A, 0.04 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation P
MSL: -
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Power Dissipation: 600W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 300V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 88A
Drain Source On State Resistance: 0.04ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	300
Price	7.54 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar[TM] HiPerFET[TM]** 

## **Power MOSFET** 

## **IXFT88N30P IXFH88N30P IXFK88N30P** 

**V =   300V DSS** 

**I =   88A D25 R ≤ 40m Ω DS(on) t ≤ 200ns rr** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

## **TO-268 (IXFT)** 

**==> picture [109 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>    Tab<br>TO-247(IXFH)<br>G<br>D     Tab<br>S<br>TO-264 (IXFK)<br>G<br>D S  Tab<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**||**TO-247(IXFH)**|**TO-247(IXFH)**|**TO-247(IXFH)**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|300                    V|300                    V|300                    V||||||||
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|300                          V|300                          V|300                          V||||||||
|**VGSS**<br>**VGSM**<br>**ID25**|Continuous                                                              ± 20                       V<br>Transient                                                                               ± 30                            V<br>TC = 25°C<br>88|Continuous                                                              ± 20                       V<br>Transient                                                                               ± 30                            V<br>88|Continuous                                                              ± 20                       V<br>Transient                                                                               ± 30                            V|Continuous                                                              ± 20                       V<br>Transient                                                                               ± 30                            V<br>A||G<br>D S||Tab|Tab|||
|**IL(RMS)**|External Lead Current Limit                                           75|External Lead Current Limit                                           75||A|**TO-264 (IXFK)**|||||||
|**IDM**|TC = 25°C, Pulse Width Limited by TJM220|220||A||||||||
|**IA**|TC = 25°C<br>60|60||A||||||||
|**EAS**|TC = 25°C|2||J||||||||
|**dV/dt**<br>**PD**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C                                    10<br>TC = 25°C                                                                    600|C                                    10<br>= 25°C                                                                    600||V/ns<br>W|G  = Gate           D      =  Drain<br>S<br>G<br>D|||G  = Gate           D      =  Drain|G  = Gate           D      =  Drain<br>Tab|||
|**TJ**|-55 to +150                       °C|-55 to +150                       °C|-55 to +150                       °C|-55 to +150                       °C|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|S  = Source       Tab   =  Drain|
|**TJM**|+150                       °C|+150                       °C|+150                       °C|+150                       °C||||||||
|**Tstg**-55 to +150|-55 to +150|-55 to +150||°C|**Features**|||||||
|**TL**<br>**TSOLD**|1.6mm (0.063in) from Case for 10s                             300<br>Plastic Body for 10s                                                      260                       °C|1.6mm (0.063in) from Case for 10s                             300<br>Plastic Body for 10s                                                      260                       °C|Plastic Body for 10s                                                      260                       °C|°C<br>Plastic Body for 10s                                                      260                       °C||International Standard Packages<br>Fast Intrinsic Diode||||International Standard Packages|International Standard Packages|
|**Md**|Mounting Torque  (TO-247&TO-264)                        1.13/10              Nm/lb.in.|Mounting Torque  (TO-247&TO-264)                        1.13/10              Nm/lb.in.|Mounting Torque  (TO-247&TO-264)                        1.13/10              Nm/lb.in.|||Avalanche Rated||||||
|**Weight**|TO-268                                                                           4                        g|TO-268                                                                           4                        g|TO-268                                                                           4                        g|TO-268                                                                           4                        g||Low RDS(ON)and Q|and QG|||||
||TO-247                                                                               6                          g|TO-247                                                                               6                          g|TO-247                                                                               6                          g|TO-247                                                                               6                          g||Low Package Inductance||||||
||TO-264                                                                               10                          g|TO-264                                                                               10                          g|TO-264                                                                               10                          g|TO-264                                                                               10                          g||||||||
||||||**Advantages**|||||||
|||||||High Power Density||||||
|**Symbol**<br>(TJ= 25°C, Unless Otherwise Specified)|**Test Conditions                                               Characteristic Values**<br>= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Test Conditions                                               Characteristic Values**<br>**Min.       Typ.        Max.**|||||Easy to Mount<br>Space Savings||||||
|**BVDSS**|VGS = 0V, ID= 250μA<br>300|300<br>~~|~~||V|**Applications**|||||||
|**VGS(th)**<br>**IGSS**|VDS = VGS, ID= 4mA<br>2.5                          5.0     V<br>VGS = ± 20V, VDS= 0V|DC-DC Coverters<br> Battery Chargers<br>2.5                          5.0     V<br>±100   nA<br>~~|~~.<br>~~|~~||||||||||
|**IDSS**<br>**RDS(on)**|VDS = VDSS, VGS= 0V<br>TJ= 125°C<br>VGS= 10V, ID= 0.5 • ID25, Note 1|Power Supplies<br> <br>25   μA<br>250   μA<br>40  mΩ<br>~~_~~<br>:<br>~~|~~||||Switch-Mode and Resonant-Mode<br>Power Supplies<br>DC Choppers<br> AC and DC Motor Drives||||||



G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance 

Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC and DC Motor Drives : Uninterrupted Power Supplies High Speed Power Switching Applications 

© 2009 IXYS CORPORATION, All Rights Reserved 

DS99216F(11/09) 

## **IXFT88N30P   IXFH88N30P IXFK88N30P** 

|**Symbol**<br>(TJ= 25°C, Unless Otherwise Specified)|**Test Conditions**<br>C, Unless Otherwise Specified)|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|**Characteristic Values**<br>**Min.        Typ.       Max.**|
|---|---|---|---|---|
|**gfs**|VDS = 10V, ID= 0.5 • ID25, Note 1                       40             60|, Note 1                       40             60|, Note 1                       40             60|S|
|**Ciss**||6300|6300|pF|
|**Coss**|VGS = 0V, VDS= 25V, f = 1MHz|950|950|pF|
|**Crss**||190|190|pF|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 60A<br>RG= 3.3Ω(External)|25<br>24<br>96<br>25|25<br>24<br>96<br>25|ns<br>ns<br>ns<br>ns|
|**Qg(on)**||180|180|nC|
|**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|44|44|nC|
|**Qgd**||90|90|nC|
|**RthJC**|||0.21|0.21 °C/W|
|**RthCS**|TO-247|0.21|0.21|°C/W|
|TO-264|TO-264|0.15|0.15|°C/W|



## **Source-Drain Diode** 

|**Symbol**<br>(TJ= 25°C, Unless Otherwise Specified)|**Test Conditions                                              Characteristic Values**<br>C, Unless Otherwise Specified)**Min.      Typ.        Max.**|**Test Conditions                                              Characteristic Values**<br>**Min.      Typ.        Max.**|**Test Conditions                                              Characteristic Values**<br>**Min.      Typ.        Max.**|**Test Conditions                                              Characteristic Values**<br>**Min.      Typ.        Max.**||
|---|---|---|---|---|---|
|**IS**|VGS= 0V||88     A|88     A|88     A|
|**ISM**|Repetitive, Pulse Width Limited by TJM||220     A|220     A|220     A|
|**VSD**|IF= IS, VGS= 0V, Note 1||1.5     V|1.5     V|1.5     V|
|**trr**|100        200  ns<br>IF= 25A, -di/dt = 100A/μs,|100        200  ns|100        200  ns|100        200  ns|100        200  ns|
|**QRM**|0 .6<br>VR= 100V, VGS= 0V|0 .6|0 .6||μC|



**TO-264 (IXFK) Outline** 

|Dim.|Millimeter<br>Min.<br>Max.<br>Min.<br>Dim.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.82<br>5.13<br>A1<br>2.54<br>2.89<br>A2<br>2.00<br>2.10|.190<br>.202<br>.100<br>.114<br>.079<br>.083|
|b<br>b1<br>b2|1.12<br>1.42<br>b1<br>2.39<br>2.69<br>b2<br>2.90<br>3.09|.044<br>.056<br>.094<br>.106<br>.114<br>.122|
|c|0.53<br>0.83|.021<br>.033|
|D|25.91<br>26.16<br>1.020|1.020<br>1.030|
|E<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.786<br>.215 BSC|
|J|0.00<br>0.25|.000<br>.010|
|K|0.00<br>0.25|.000<br>.010|
|L<br>L1|20.32<br>20.83<br>L1<br>2.29<br>2.59|.800<br>.820<br>.090<br>.102|
|P|3.17<br>3.66|.125<br>.144|
|Q<br>Q1|6.07<br>6.27<br>Q1<br>8.38<br>8.69|.239<br>.247<br>.330<br>.342|
|R<br>R1|3.81<br>4.32<br>R1<br>1.78<br>2.29|.150<br>.170<br>.070<br>.090|
|S|6.04<br>6.30|.238<br>.248|
|T<br>1.57<br>1.83<br>.062<br>.072|||



> **TO-247 (IXFH) Outline** ~~me~~ ∅ P **1       2       3** ~~i~~ ha 

Note  1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

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**----- Start of picture text -----**<br>
TO-268 (IXFT) Outline<br>**----- End of picture text -----**<br>


||3 - Source|Tab - Drain|
|---|---|---|
|Dim.<br>A<br>A1<br>A2<br>b<br>b1<br>b2|Dim.<br>Millimeter<br>Min.<br>Max.<br>4.7<br>5.3<br>2.2<br>2.54<br>2.2<br>2.6<br>1.0<br>1.4<br>1.65<br>2.13<br>2.87<br>3.12|Inches<br>Min.<br>Max.<br>.185<br>.209<br>.087<br>.102<br>.059<br>.098<br>.040<br>.055<br>.065<br>.084<br>.113<br>.123|
|2<br>C<br>D<br>E<br>e<br>L<br>L1<br>∅P<br>Q|.4<br>.8<br>20.80<br>21.46<br>15.75<br>16.26<br>5.20<br>5.72<br>0.205<br>19.81<br>20.32<br>L1<br>4.50<br>P<br>3.55<br>3.65<br>5.89<br>6.40<br>0.232|.016<br>.031<br>.819<br>.845<br>.610<br>.640<br>0.205 0.225<br>.780<br>.800<br>.177<br>.140<br>.144<br>0.232 0.252|
|R<br>S|4.32<br>5.49<br>6.15 BSC|.170<br>.216<br>242 BSC|



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFT88N30P   IXFH88N30P IXFK88N30P** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>90<br>V GS = 10V<br>80            9V<br>           8V<br>70<br>60 7V<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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**----- Start of picture text -----**<br>
200<br>V GS = 10V<br>180            9V<br>160<br>140<br>8V<br>120<br>100<br>80 7V<br>60<br>40 6V<br>20<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 44A Value<br>Fig. 3. Output Characteristics @ TJ = 125ºC  vs. Junction Temperature<br>90 3.2<br>VGS = 10V<br>80         9V        8V 2.8 V GS = 10V<br>70<br>7V 2.4<br>60 I D = 88A<br>50 2.0<br>40 6V 1.6 I D = 44A<br>30<br>1.2<br>20<br>5V 0.8<br>10<br>0 0.4<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 44A Value Fig. 6. Maximum Drain Current vs.<br> vs. Drain Current Case Temperature<br>3.6 80<br>VGS = 10V  70 External Lead Current Limit<br>3.2<br>TJ = 125ºC 60<br>2.8<br>50<br>2.4<br>40<br>2.0<br>30<br>1.6<br>20<br>1.2 TJ = 25ºC 10<br>0.8 0<br>0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized  - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

## **IXFT88N30P   IXFH88N30P IXFK88N30P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>160<br>140<br>120<br>100<br>80<br>TJ = 125ºC<br>60           25ºC<br>        - 40ºC<br>40<br>20<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>240<br>200<br>160<br>120<br>80<br>TJ = 125ºC<br>40 T J   = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>100<br>T J = - 40ºC<br>90<br>80<br>70 25ºC<br>60<br>50 125 º C<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br> V DS = 150V<br>8  I D = 44A<br> I G = 10mA<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [532 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
10,000 1,000<br>C iss R DS(on)  Limit 100µs 25µs<br>1ms<br>10ms<br>100<br>Coss<br>DC<br>1,000<br>10<br>Crss  T J  = 150ºC<br>f = 1 MHz   TC = 25ºC<br> Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 1 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFT88N30P   IXFH88N30P IXFK88N30P** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br>  - ºC  / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: T_88N30P(8S)11-18-09-A 

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Updated at April 27, 2026

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