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IXFH80N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 80 A, 0.038 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HiPerFET
- Qualification: -
- Power Dissipation: 890W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 80A
- Drain Source On State Resistance: 0.038ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 7.12 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## **X2-Class HiPerFET[TM] Power MOSFET** ## **IXFH80N65X2 IXFK80N65X2** **V = 650V DSS I = 80A D25 R** **38m** **DS(on)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **==> picture [200 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>TO-247<br>(IXFH)<br>G<br>S<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---|---| |**VDSS**|TJ = 25C to 150C||650|V| |**VDGR**|TJ = 25C to 150C, RGS= 1M||650|V| |**VGSS**<br>**VGSM**<br>**ID25**|Continuous<br>Transient<br>TC = 25C||30<br>40<br>80|V<br>V<br>A| |**IDM**|TC = 25C, Pulse Width Limited by TJM||160|A| |**IA**|TC = 25C||20|A| |**EAS**|TC = 25C||3|J| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 50 V/ns|150°C 50 V/ns|150°C 50 V/ns|150°C 50 V/ns| |**PD**|TC = 25C||890|W| |**TJ**||-55 ... +150|-55 ... +150|C| |**TJM**<br>**Tstg**||-55 ... +150|150<br>-55 ... +150|C<br>C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**Md**Mounting Torque 1.13 / 10|Mounting Torque 1.13 / 10|Mounting Torque 1.13 / 10||Nm/lb.in| |**Weight**<br>TO-264 10 g|**Weight**TO-247 6 g<br>TO-264 10 g|TO-247 6 g<br>TO-264 10 g|TO-247 6 g<br>TO-264 10 g|TO-247 6 g<br>TO-264 10 g| ## **TO-264 (IXFK)** **==> picture [121 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>D (Tab)<br>S<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** - International Standard Packages - Low RDS(ON) and QG - Avalanche Rated - Low Package Inductance ## **Advantages** - High Power Density - Easy to Mount |(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**<br>~~|~~|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>650<br>~~|~~|~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.5 5.0 V<br>~~|~~|5.0 V<br>~~|~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>||100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>3 mA|50<br>3 mA<br>~~=~~|50A<br>3 mA<br>~~=~~| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|~~a~~|38 m<br>~~a~~| - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100673E(2/20) © 2020 IXYS CORPORATION, All Rights Reserved **IXFH80N65X2 IXFK80N65X2** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 33|55|S| |**RGi**<br>Gate Input Resistance<br>|0.6|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|8300<br>5010<br>1.6|pF<br>pF<br>pF| |**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|280<br>1160|pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3 (External)|32<br>24<br>70<br>11|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|140<br>50<br>40|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-247<br>TO-264|<br>0.21<br>0.15|0.14C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||80 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM||320 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 40A, -di/dt = 100A/µs<br>VR= 100V|200<br>1.7<br>16.7|ns<br>µC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 **IXFH80N65X2 IXFK80N65X2** **==> picture [264 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>80<br>VGS = 10V<br>70 9V<br>8V<br>60<br>50<br>7V<br>40<br>30<br>20 6V<br>10<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [252 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>VGS = 10V<br>180 9V<br>160<br>140<br>8V<br>120<br>100<br>7V<br>80<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [535 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 40A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>80 3.8<br>VGS = 10V<br>70 8V 3.4 VGS = 10V<br>3.0<br>60<br>7V 2.6<br>50 I D = 80A<br>2.2<br>40<br>6V<br>1.8 I D = 40A<br>30<br>1.4<br>20<br>5V 1.0<br>10 0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>VGS = 10V<br>4.0 1.2<br>3.5 1.1 BV DSS<br>TJ = 125ºC<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>TJ = 25ºC V GS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 20 40 60 80 100 120 140 160 180 200 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved **IXFH80N65X2 IXFK80N65X2** **==> picture [537 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs.<br>Fig. 8. Input Admittance<br>Case Temperature<br>90 100<br>80 90<br>70 80<br>70<br>60<br>TJ = 125ºC<br>60<br>50 25ºC<br> - 40ºC<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10 10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **==> picture [539 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>90 200<br>80 TJ = - 40ºC 180<br>160<br>70<br>140<br>60 25ºC<br>120<br>50<br>125ºC 100<br>40<br>80<br>30 60 TJ = 125ºC<br>20<br>40 TJ = 25ºC<br>10 20<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V<br> I D = 40A Ciss<br>8 10,000<br> I G = 10mA<br>6 1,000<br>Coss<br>4 100<br>2 10<br>f = 1 MHz Crss<br>0 1<br>0 20 40 60 80 100 120 140 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemensgf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFH80N65X2 IXFK80N65X2** **Fig. 13. Output Capacitance Stored Energy** **Fig. 14. Forward-Bias Safe Operating Area** **==> picture [538 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> 60 1000<br>RDS(on) Limit<br>50<br>100 25µs<br>40<br>100µs<br>30 10<br>20<br>1<br> TJ = 150ºC 1ms<br>10 TC = 25ºC<br>Single Pulse<br>10ms<br>0 Fig. 15. Maximum Transient T 0.1 hermal Impedance<br>1 0 100 200 300 400 500 600 10 100 1,0 00<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>0.3 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules - Amperes<br>OSS ID<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N65X2(Z8-S602) 11-19-15 ## **IXFH80N65X2 IXFK80N65X2** **==> picture [168 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 Outline<br>pee<br>bath Thay<br>rr 7 fs] D2<br>ei @Orll<br>Tr ee<br>or<br>1 2.3 L<br>TI<br>el<br>IE =<br>1 - Gate<br>=<br>2,4 - Drain<br>i?<br> 3 - Source<br>TO-264 Outline A<br>=<br>[ Go] ; ; g<br>im ‘a<br>jo<br>9 7]| 4<br>oa ie ———<br>i 02<br>c<br>1 - Gate<br>aa 2,4 - Drain<br> 3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFH80N65X2 IXFK80N65X2** ~~sd~~ Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved
Updated at April 27, 2026
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