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IXFH6N100
Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 180W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 180W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 2ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 1kV
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 6A
- Drain Source On State Resistance: 2ohm
- Gate Source Threshold Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS[TM] Family ||||**V**DSS||**I**D25|**R**DS(on)|**R**DS(on)| |---|---|---|---|---|---|---|---| |**IXFH/IXFM **|**6 **|**N90**|**900 V**||**6 A**|**1.8**|**1.8**<br>Q| |**IXFH/IXFM **|**6 **|**N100**|**1000 V**||**6 A**|**2.0**|**2.0**<br>Q| ||||**t**rr<br>**250 ns**<br><||**250 ns**||| |**Symbol**|**Test Conditions**|**Maximum Ratings**|**TO-247 AD (IXFH)**| |---|---|---|---| |**VDSS**|TJ = 25 C to 150 C|6N90<br>900<br>V|| |**VDGR**|TJ = 25 C to 150 C; RGS= 1 M|6N100<br>1000<br>V|| |**VGS**|Continuous|20<br>V|(TAB)| |**VGSM**<br>Transient<br>30<br>V<br>a|||Ss| |**ID25**<br>**IDM**|TC = 25 C<br>TC = 25 C, pulse width limited by TJM|6<br>A<br>24<br>A|**TO-204 AA (IXFM)**| |**IAR**|TC = 25 C|6<br>A|| |**EAR**|TC = 25 C|18<br>mJ|| |**dv/dt**|IS<br>IDM, di/dt 100 A/ s, VDD VDSS,<br>5<br>V/ns<br>TJ150 C, RG= 2<br>D<br>G<br>=<br>=<br>=<br>U<br><<br>°<br>Q||| |**PD**|TC = 25 C|180<br>W|G = Gate,<br>D = Drain,| |**TJ**||-55 ... +150<br>C|S = Source,<br>TAB = Drain| |**TJM**||150<br>C|| |**Tstg**||-55 ... +150<br>C|**Features**| |**TL**<br>**Md**|1.6 mm (0.062 in.) from case for 10 s<br>Mounting torque|300<br>C<br>1.13/10<br>Nm/lb.in.|• International standard packages<br>• Low RDS (on)HDMOSTMprocess<br>• Rugged polysilicon gate cell structure| |**Weight**||TO-204 = 18 g, TO-247 = 6 g|• Unclamped Inductive Switching (UIS)<br>rated| - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect - Fast intrinsic Rectifier |**Symbol**<br>(TJ= 25 C, unless otherwise specified)<br>**min.**|C, unless otherwise specified)<br>**typ.**|C, unless otherwise specified)<br>**max.**| |---|---|---| |**VDSS**<br>VGS = 0 V, ID= 3 mA<br>6N90<br>900<br>6N100<br>1000<br>**VGS(th)**<br>VDS = VGS, ID= 2.5 mA<br>2.0||V<br>V<br>4.5<br>V| |**IGSS**<br>VGS =<br>20 VDC, VDS= 0||100<br>nA| |**IDSS**<br>VDS = 0.8 • VDSS<br>TJ=<br>25 C<br>VGS= 0 V<br>TJ= 125 C||250<br>A<br>1<br>mA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 • ID25<br>6N90<br>6N100<br>Pulse test, t 300 s, duty cycle d 2 %<br><<br>ou<br><||1.8<br>2.0<br>Q<br>Q| ## **Applications** - DC-DC converters - Synchronous rectification - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - AC motor control - Temperature and lighting controls - Low voltage relays ## **Advantages** - Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) - Space savings - High power density IXYS reserves the right to change limits, test conditions, and dimensions. 91529E(10/95) © 2000 IXYS All rights reserved 1 - 4 **IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100** ## **Symbol** ## **Test Conditions** ## **Characteristic Values** ## **TO-247 AD (IXFH) Outline** |||**TO-247 AD (IXFH) Outline**<br>(TJ= 25 C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**<br>(TJ= 25 C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**<br>(TJ= 25 C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**<br>(TJ= 25 C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**<br>(TJ= 25 C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**| |---|---|---|---|---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**||||C|L| |**gfs**|VDS = 10 V; ID= 0.5 • ID25, pulse test||4|6||S||——||| |**Ciss**||||2600||pF||||| |**Coss**<br>**Crss**<br>**td(on)**|VGS = 0 V, VDS= 25 V, f = 1 MHz|||180<br>45<br>35|100|pF<br>pF<br>ns||iit||| |**tr**|VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>40<br>110<br>ns<br>(<br>G<br>J<br>M|||||||||| |**td(off)**|RG= 4.7|(External)||100|200|ns||||| |**tf**||||60|100|ns||||| |||||||||||| |**Qg(on)**<br>**Qgs**|VGS = 10 V, V|= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||88<br>21|130<br>30|nC<br>nC||Dim.<br>A|Millimeter<br>Min.<br>Max.<br>19.81 20.32|Inches<br>Min.<br>Max.<br>0.780 0.800| |**Qgd**||||38|70|nC||B|20.80 21.46|0.819 0.845| |||||||||C|15.75 16.26|0.610 0.640| |**RthJC**|||||0.7|K/W||D|3.55<br>3.65|0.140 0.144| |**RthCK**||||0.25||K/W||E<br>F|4.32<br>5.49<br>5.4<br>6.2|0.170 0.216<br>0.2120.244| |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>19.81<br>B<br>20.80|19.81 20.32<br>20.80 21.46|0.780 0.800<br>0.819 0.845| |C<br>15.75<br>D|15.75 16.26<br>3.55<br>3.65|0.610 0.640<br>0.140 0.144| |E<br>F|4.32<br>5.49<br>5.4<br>6.2|0.170 0.216<br>0.212 0.244| |G<br>H|1.65<br>2.13<br>-<br>4.5|0.065 0.084<br>-<br>0.177| |J<br>K|1.0<br>1.4<br>10.8<br>11.0|0.040 0.055<br>0.426 0.433| |L<br>M|4.7<br>5.3<br>0.4<br>0.8|0.185 0.209<br>0.016 0.031| |N|1.5<br>2.49|0.087 0.102| ## **Source-Drain Diode** ## **Characteristic Values** |**Symbol**|**Test Conditions**|(TJ= 25 C, unless otherwise specified)|C, unless otherwise specified)<br>**min.**|C, unless otherwise specified)<br>**typ.**<br>**max.**|C, unless otherwise specified)<br>**typ.**<br>**max.**|C, unless otherwise specified)<br>**typ.**<br>**max.**|C, unless otherwise specified)<br>**typ.**<br>**max.**||K<br>L<br>M||10.8<br>4.7<br>0.4|11.0<br>5.3<br>0.8|0.426 0.433<br>0.185 0.209<br>0.016 0.031||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**IS**|VGS = 0 V|||||6|A||N||1.5|2.49|0.087 0.102||| |**ISM**|Repetitive; pulse width limited by TJM|||||24|**TO-204 AA (IXFM) Outline**<br>A|**TO-204 AA (IXFM) Outline**||**TO-204 AA (IXFM) Outline**|||**TO-204 AA (IXFM) Outline**||| |**VSD**|IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t<br>300<br>s, duty cycle d 2 %<br><<br>yu<br><<br>5||||||||||||||| |**trr**||TJ=<br>25 C||||250|ns||||||||| |**QRM**|IF= IS<br>-di/dt = 100 A/ <br>VR= 100 V<br>||TJ= 125 C<br>TJ=<br>25 C<br>TJ= 125 C<br> s,<br>:|||0.5<br>1.0|400|ns<br>C<br>C||||||D<br>K||| |**IRM**||TJ=<br>25 C|||7.5||A||||||||| |||TJ= 125 C|||9.0||A||||||||| |Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.| |---|---|---| |A<br>B|38.61 39.12<br>19.43 19.94|1.520 1.540<br>- 0.785| |C<br>D|6.40<br>9.14<br>0.97<br>1.09|0.252 0.360<br>0.038 0.043| |E<br>F|1.53<br>2.92<br>30.15<br>BSC|0.060 0.115<br>1.187<br>BSC| |G<br>H|10.67 11.17<br>5.21<br>5.71|0.420 0.440<br>0.205 0.225| |J<br>K|16.64 17.14<br>11.18 12.19|0.655 0.675<br>0.440 0.480| |Q<br>R|3.84<br>4.19<br>25.16 25.90|0.151 0.165<br>0.991 1.020| IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 © 2000 IXYS All rights reserved 2 - 4 **IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100** Fig. 1 Output Characteristics **==> picture [205 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8 TJ =25°C VGS = 10V 6V<br>7<br>6<br>5<br>4<br>3<br>5V<br>2<br>1<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 3 RDS(on) vs. Drain Current **==> picture [213 x 379] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>TJ =25°C<br>2.8<br>2.6<br>2.4<br>VGS= 10V<br>2.2<br>VGS= 15V<br>2.0<br>1.8<br>0 2 4 6 8 10<br>ID - Amperes<br>Fig. 5 Drain Current vs.<br>Case Temperature<br>7<br>6<br>6N90<br>5<br>4<br>6N100<br>3<br>2<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Ohms<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 2 Input Admittance **==> picture [207 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5 TJ = 25°C<br>4<br>TJ = 125°C<br>3<br>TJ = - 55°C<br>2<br>1<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [220 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4 Temperature Dependence<br>of Drain to Source Resistance<br>2.50<br>2.25<br>2.00<br>1.75<br>ID = 3.0A<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [216 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6 Temperature Dependence of<br>Breakdown and Threshold Voltage<br>1.2<br>VGS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ- Degrees C<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 3 - 4 **IXFH 6N90 IXFH 6N100 IXFM 6N90 IXFM 6N100** ## Fig.7 Gate Charge Characteristic Curve ## Fig.8 Forward Bias Safe Operating Area **==> picture [208 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 500V<br>8 ID = 3.0A<br>IG = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>Gate Charge - nCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br> ## Fig.9 Capacitance Curves **==> picture [215 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 2750<br>2500 Ciss<br>2250<br>2000<br>1750<br>f = 1 MHz<br>1500<br>VDS = 25V<br>1250<br>1000<br>750<br>500<br>250 Coss<br>0 Crss<br>0 5 10 15 20 25<br>VCE - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> **==> picture [233 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 10µs<br>10<br>100µs<br>Limited by RDS(on)<br>1ms<br>1<br>10ms<br>100ms<br>6N90 limit<br>6N100 limit<br>0.1<br>1 10 100 1000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## Fig.10Source Current vs. Source to Drain Voltage **==> picture [200 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5<br>4<br>3<br>TJ = 125°C<br>2<br>1 TJ = 25°C<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig.11 Transient Thermal Impedance **==> picture [485 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 1.000<br>D=0.5<br>0.100 D=0.2<br>D=0.1<br>D=0.05<br>D=0.02<br>D=0.01<br>0.010<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 4 - 4
Updated at February 9, 2023
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