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IXFH60N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 60 A, 0.052 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HiPerFET
- Qualification: -
- Power Dissipation: 780W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 60A
- Drain Source On State Resistance: 0.052ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 5.76 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class HiPerFET[TM] Power MOSFET** ## **IXFH60N65X2** **V = 650V DSS I = 60A D25 R 52m DS(on)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |Fast Intrinsic Diode|Fast Intrinsic Diode|||**TO-247**||||| |---|---|---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|G<br>S<br>D|||D (Tab)|| |**VDSS**|TJ = 25C to 150C|650|V|||||| |**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V|G = Gate D = Drain<br>S = Source Tab = Drain|G = Gate D = Drain<br>S = Source Tab = Drain|G = Gate D = Drain<br>S = Source Tab = Drain|G = Gate D = Drain<br>S = Source Tab = Drain|| |**VGSS**|Continuous|30|V|||||| |**VGSM**|Transient|40|V|||||| |**ID25**|TC = 25C|60|A|||||| |**IDM**|TC = 25C, Pulse Width Limited by TJM|120|A|||||| |**IA**|TC = 25C|15|A|||||| |**EAS**|TC = 25C|2.5|J|**Features**||||| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 50 V/ns|150°C 50 V/ns|150°C 50 V/ns|International Standard Package||International Standard Package||International Standard Package| |**PD**|TC = 25C|780|W|Low RDS(ON)and Q|and QG|||| |**TJ**<br>**TJM**||-55 ... +150<br>150|C<br>C|Avalanche Rated<br>Low Package Inductance||||| |**Tstg**||-55 ... +150|C|||||| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260|Maximum Lead Temperature for Soldering 300<br>1.6 mm (0.062in.) from Case for 10s 260|°C<br>°C|**Advantages**||||| |**Md**|Mounting Torque 1.13 / 10|Mounting Torque 1.13 / 10|Nm/lb.in|High Power Density||||| |**Weight**|**Weight**6 g|6 g|6 g|Easy to Mount<br>Space Savings||||| - International Standard Package - Low RDS(ON) and QG Avalanche Rated Low Package Inductance - High Power Density - Easy to Mount Space Savings |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>650<br>~~|~~|~~||~~<br>~~||~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.5 5.0 V<br>~~|~~<br>~~|~~|5.0 V<br>~~||~~<br>~~||~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~| |~~<br>~~||~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>2.5 mA<br>~~|~~|25<br>2.5 mA<br>~~| |—~~|25A<br>2.5 mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1||52 m| ## **Applications** - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100672C(03/16) © 2016 IXYS CORPORATION, All Rights Reserved ## **IXFH60N65X2** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**<br>~~ri~~|**Min. Typ. Max**<br>~~ri~~|**Min. Typ. Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 23 38 S<br>~~ri~~|, Note 1 23 38 S<br>~~ri~~<br>~~—~~|, Note 1 23 38 S| |**RGi**<br>Gate Input Resistance<br>0.8|0.8<br>~~—~~|| |**Ciss**<br>6300<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>3540<br>**Crss**<br>1.7|6300<br>3540<br>1.7<br>~~—~~|pF<br>pF<br>pF| |**Co(er)**<br>207<br>**Co(tr)**<br>855 pF<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|207<br>855 pF|pF<br>855 pF| |**td(on)**<br>30<br>**tr**<br>23<br>**td(off)**<br>63<br>**tf**<br>12<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3 (External)|30<br>23<br>63<br>12|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>108<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>40<br>**Qgd**<br>34|108<br>40<br>34|nC<br>nC<br>nC| |**RthJC**<br>0.16<br>**RthCS**<br>0.21|0.16<br>0.21|0.16C/W<br>0.21C/W| **==> picture [145 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXFH) Outline<br>D A<br> A2 A2 A E B 0P O 0K M D B M+<br>Ts p— —+ E Q S ftom<br>R + S D2 +<br>D rPOL! ? JS D1<br>0P1<br>4<br>1 2 3 ixys option<br> L1<br>C<br> E1<br>L<br> A1 b<br>c b2<br>Ee b4 e PINS: 1 - Gate<br>[Olt O J M C A M+ oO ] 2, 4 - Drain ]<br> 3 - Source<br>**----- End of picture text -----**<br> ## **Source-Drain Diode** |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max**|**Min. Typ. Max**|**Min. Typ. Max**| |---|---|---| |**IS**<br>VGS= 0V|60 A|60 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM|240 A|240 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1|1.4 V|1.4 V| |**trr**<br>180<br>**QRM**<br>1.4<br>**IRM**<br> 16.0<br>IF= 30A, -di/dt = 100A/μs<br>VR= 100V|180<br>1.4<br>16.0|ns<br>μC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXFH60N65X2** **==> picture [538 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>60 160<br>VGS = 10V VGS = 10V<br> 9V 140<br>50 9V<br>8V<br>120<br>40<br>100<br>8V<br>30 7V 80<br>60<br>20<br>6V 40 7V<br>10<br>20<br>5V<br>6V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 30A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>60 3.4<br>V GS = 10V<br> 8V 3.0 VGS = 10V<br>50<br>2.6<br>40 7V 2.2 I D = 60A<br>30 1.8<br>I D = 30A<br>6V 1.4<br>20<br>1.0<br>10<br>0.6<br>5V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 VGS = 10V 1.2<br>3.5 1.1 BV DSS<br>T J = 125ºC<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>T J = 25ºC VGS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Amperes - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on) / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved **IXFH60N65X2** **==> picture [537 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maxing Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>70 90<br>80<br>60<br>70<br>50<br>60<br>40 50 T 25ºCJ = 125ºC<br> - 40ºC<br>30 40<br>30<br>20<br>20<br>10<br>10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8<br>TC - Degrees Centigrade VGS - Volts<br>Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>70 200<br>TJ = - 40ºC<br>180<br>60<br>160<br>50 25ºC 140<br>120<br>40<br>125ºC<br>100<br>30<br>80<br>20 60 TJ = 125ºC<br>40 TJ = 25ºC<br>10<br>20<br>0 0<br>0 10 20 30 40 50 60 70 80 90 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3<br>I D - Amperes V SD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9 VDS = 325V<br>8 I D = 30A 10,000 C iss<br> I G = 10mA<br>7<br>6 1,000<br>5 Coss<br>4 100<br>3<br>2 10<br>1 f = 1 MHz Crss<br>0 1<br>0 10 20 30 40 50 60 70 80 90 100 110 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Amperes - Amperes<br>D D<br>I I<br> - Siemens - Amperes<br>f s S<br>g I<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFH60N65X2** **Fig. 13. Output Capacitance Stored Energy** **Fig. 14. Forward-Bias Safe Operating Area** **==> picture [529 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 45 1000<br>40 RDS(on) Limit<br>35<br>100<br>25µs<br>30<br>25 100µs<br>10<br>20<br>15<br>1<br>10 TJ = 150ºC<br> TC = 25ºC<br>5 Single Pulse 1ms<br>0 Fig. 15. Maximum Transient T 0.1 hermal Impedance<br>0 100 200 300 400 500 600 10 100 1,000<br>1<br>VDS - Volts VDS - Volts<br> - MicroJoules - Amperes<br>OSS ID<br>E<br>**----- End of picture text -----**<br> **==> picture [525 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 15. Maximum Transient Thermal Impedance<br>aaaaa<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_60N65X2(X7-S602) 11-19-15 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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