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IXFH58N20
Power MOSFET, N Channel, 200 V, 58 A, 0.04 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.04ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 58A
- Drain Source On State Resistance: 0.04ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.04 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** **V I R** DSS D25 DS(on) **IXFH/IXFM42N20 200 V 42 A 60m IXFH/IXFM/IXFT50N20 200 V 50 A 45m** 9) **IXFH/IXFT58N20** TT? **200 V 58 A 40m** 9) **t 200 ns** < 18) rr **TO-247 AD (IXFH)** N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS[TM] Family |**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**| |---|---|---|---|---|---|---|---|---| |**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>(TAB)<br>~~nt~~<br>D||||||||| |**VDSS**|TJ = 25 C to 150 <br>°|C<br>°||200|V|S||| |**VDGR**<br>TJ = 25 C to 150 C; RGS= 1 M<br>200<br>V<br>~~i:~~||||||**TO-268 (D3) Case Style**||| |**VGS**|Continuous|||20|V|||| |**VGSM**|Transient|||30|V|G||| |**ID25**|TC = 25 C||42N20<br>50N20|42<br>50|A<br>A|S||(TAB)| ||||58N20|58|A|||| |**IDM**<br>**IAR**|TC = 25 C, pulse width limited by T<br>TC = 25 C<br>||C, pulse width limited by TJM|42N20<br>50N20<br>58N20<br>42N20<br>50N20<br>58N20|168<br>200<br>232<br>42<br>50<br>58|A<br>A<br>A<br>A<br>A<br>A|**TO-204 AE (IXFM)**<br>D<br>G<br>S<br>CH<br>U||| |**EAR**|TC = 25 C|||30|mJ|G = Gate,<br>D = Drain,<br>S = Source,<br>TAB = Drain||| |**dv/dt**|IS<br>IDM, di/dt 100 A/ s, VDD VDSS,|||5<br>V/ns|V/ns|||| ||TJ150 C, RG= 2|= 2||||**Features**||| |**PD**|TC = 25 C|||300|W|• International standard packages||| |**TJ**||||-55 ... +150|C|• Low RDS (on)HDMOSTMprocess<br>• Rugged polysilicon gate cell structure||| |**TJM**||||150|C|• Unclamped Inductive Switching (UIS)||| |**Tstg**||||-55 ... +150|C|rated<br>• Low package inductance||| |**TL**|1.6 mm (0.062 in.) from case for 10 s|||300|C|- easy to drive and to protect||| |**Md**|Mounting torque|||1.13/10 Nm/lb.in.||• Fast intrinsic Rectifier||| |**Weight**|||TO-204 = 18 g, TO-247 = 6 g|TO-204 = 18 g, TO-247 = 6 g||**Applications**||| ## **Applications** - DC-DC converters - Synchronous rectification - Battery chargers |**Symbol**<br>(TJ= 25 C, unless otherwise specified)<br>**min.**<br>a|C, unless otherwise specified)<br>**typ.**|C, unless otherwise specified)<br>**max.**| |---|---|---| |**VDSS**<br>VGS = 0 V, ID= 250<br>A<br>200<br>**VGS(th)**<br>VDS = VGS, ID= 4 mA<br>2<br>a||V<br>4<br>V| |**IGSS**<br>VGS =<br>20 VDC, VDS= 0<br>a||100<br>nA| |**IDSS**<br>VDS = 0.8 • VDSS<br>TJ= 25 C<br>VGS= 0 V<br>TJ= 125 C<br>a<br>°||200<br>A<br>1<br>mA<br>LL| - Switched-mode and resonant-mode power supplies - DC choppers - AC motor control - Temperature and lighting controls - Low voltage relays ## **Advantages** - Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) - High power surface mountable package - High power density - © 2000 IXYS All rights reserved 91522H (2/98) IXYS reserves the right to change limits, test conditions, and dimensions. 1 - 4 ## **IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20 IXFH/IXFM50N20 IXFT58N20** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25 C, unless otherwise specified)<br>**Min. Typ.**<br>**Max.**<br>**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>42N20<br>0.060<br>50N20<br>0.045<br>58N20<br>0.040<br>Pulse test, t 300<br>s, duty cycle d 2 %<br>**gfs**<br>VDS = 10 V; ID= 0.5 ID25, pulse test<br>20<br>32<br>S<br>**Ciss**<br>4400<br>pF<br>**Coss**<br>VGS = 0 V, VDS= 25 V, f = 1 MHz<br>800<br>pF<br>**Crss**<br>285<br>pF<br>**td(on)**<br>18<br>25<br>ns<br>**tr**<br>VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>15<br>20<br>ns<br>**td(off)**<br>RG = 1 (External)<br>72<br>90<br>ns<br>**tf**<br>16<br>25<br>ns<br>**Qg(on)**<br>190<br>220<br>nC<br>**Qgs**<br>VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>35<br>50<br>nC<br>**Qgd**<br>95<br>110<br>nC<br>**RthJC**<br>0.42<br>K/W<br>**RthCK**<br>(TO-247 and TO-204 Case styles)<br>0.25<br>K/W<br>**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25 C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS = 0 V<br>42N20<br>42<br>A<br>50N20<br>50<br>A<br>58N20<br>58<br>A<br>**ISM**<br>Repetitive;<br>42N20<br>168<br>A<br>pulse width limited by TJM<br>50N20<br>200<br>A<br>58N20<br>232<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t<br>00 s, duty cycle d<br>2 %<br>**trr**<br>TJ= 25 C<br>200<br>ns<br>TJ= 125 C<br>300<br>ns<br>**QRM**<br>TJ= 25 C<br>1.5<br>C<br>TJ= 125 C<br>2.6<br>C<br>**IRM**<br>TJ= 25 C<br>19<br>A<br>TJ= 125 C<br>23<br>A<br>IF= 25A,<br>-di/dt = 100 A/ s,<br>VR= 100 V<br>**TO-247 AD (IXFH) Outline**<br>**TO-204 AE (IXFM) Outline**<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.9<br>5.1<br>.193<br>.201<br>A1<br>2.7<br>2.9<br>.106<br>.114<br>A2<br>.02<br>.25<br>.001<br>.010<br>b<br>1.15<br>1.45<br>.045<br>.057<br>b2<br>1.9<br>2.1<br>.75<br>.83<br>C<br>.4<br>.65<br>.016<br>.026<br>D<br>13.80<br>14.00<br>.543<br>.551<br>E<br>15.85<br>16.05<br>.624<br>.632<br>E1<br>13.3<br>13.6<br>.524<br>.535<br>e 5.45 BSC<br>.215 BSC<br>H<br>18.70<br>19.10<br>.736<br>.752<br>L<br>2.40<br>2.70<br>.094<br>.106<br>L1<br>1.20<br>1.40<br>.047<br>.055<br>L2<br>1.00<br>1.15<br>.039<br>.045<br>L3 0.25 BSC .010 BSC<br>L4<br>3.80<br>4.10<br>.150<br>.161<br>**Min. Recommended Footprint**<br>**TO-268AA (D3 PAK)**<br>:<br>Q<br>Q<br>Q<br><<br>y<br><<br>||<br>]<br>)<br><<br>,<br>°<br>|<br>E<br>HES<br>E1<br>z=[pe<br>02<br>AH<br>Hy) RST<br>43 |<br>2<br>ul<br>cm im:<br>\4<br>i T<br>i<br>aT|**TO-247 AD (IXFH) Outline**<br>Dim. Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>19.81 20.32<br>0.780 0.800<br>B<br>20.80 21.46<br>0.819 0.845<br>C<br>15.75 16.26<br>0.610 0.640<br>D<br>3.55<br>3.65<br>0.140 0.144<br>E<br>4.32<br>5.49<br>0.170 0.216<br>F<br>5.4<br>6.2<br>0.212 0.244<br>G<br>1.65<br>2.13<br>0.065 0.084<br>H<br>-<br>4.5<br>-<br>0.177<br>J<br>1.0<br>1.4<br>0.040 0.055<br>K<br>10.8<br>11.0<br>0.426 0.433<br>L<br>4.7<br>5.3<br>0.185 0.209<br>M<br>0.4<br>0.8<br>0.016 0.031<br>N<br>1.5<br>2.49<br>0.087 0.102<br>Cc<br>L<br>a<br>E tO<br>B<br>i<br>k<br>N| |---|---| ||**TO-204 AE (IXFM) Outline**<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>38.61 39.12<br>1.520 1.540<br>B<br>- 22.22<br>- 0.875<br>C<br>6.40 11.40<br>0.252 0.449<br>D<br>1.45<br>1.60<br>0.057 0.063<br>E<br>1.52<br>3.43<br>0.060 0.135<br>F<br>30.15<br>BSC<br>1.187<br>BSC<br>G<br>10.67 11.17<br>0.420 0.440<br>H<br>5.21<br>5.71<br>0.205 0.225<br>J<br>16.64 17.14<br>0.655 0.675<br>K<br>11.18 12.19<br>0.440 0.480<br>Q<br>3.84<br>4.19<br>0.151 0.165<br>R<br>25.16 26.66<br>0.991 1.050<br>**Min. Recommended Footprint**<br>A<br>B<br>E<br>Cc<br>D<br>K<br>F<br>J<br>DN<br>ANC<br>\O)GR<br>;<br>[9885[1659]—-}| |Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.9<br>5.1<br>.193<br>.201<br>A1<br>2.7<br>2.9<br>.106<br>.114<br>A2<br>.02<br>.25<br>.001<br>.010<br>b<br>1.15<br>1.45<br>.045<br>.057<br>b2<br>1.9<br>2.1<br>.75<br>.83<br>C<br>.4<br>.65<br>.016<br>.026<br>D<br>13.80<br>14.00<br>.543<br>.551<br>E<br>15.85<br>16.05<br>.624<br>.632<br>E1<br>13.3<br>13.6<br>.524<br>.535<br>e 5.45 BSC<br>.215 BSC<br>H<br>18.70<br>19.10<br>.736<br>.752<br>L<br>2.40<br>2.70<br>.094<br>.106<br>L1<br>1.20<br>1.40<br>.047<br>.055<br>L2<br>1.00<br>1.15<br>.039<br>.045<br>L3 0.25 BSC .010 BSC<br>L4<br>3.80<br>4.10<br>.150<br>.161<br>**TO-268AA (D3 PAK)**<br>E<br>HES<br>E1<br>z=[pe<br>02<br>AH<br>Hy) RST<br>43 |<br>2<br>ul<br>cm im:<br>\4<br>i T<br>i<br>aT|| ||[9885 [1659] —-}<br>+fH<br>_|<br>iLebite[3.00]<br>0.215<br>[5.46]| |(TJ= 25 C, unless otherwise specified)<br>**Symbol**<br>**Test Conditions**<br>**Min.**|C, unless otherwise specified)<br>**Typ.**| |---|---| |**IS**<br>VGS = 0 V<br>42N20<br>50N20<br>58N20|| |**ISM**<br>Repetitive;<br>42N20<br>pulse width limited by TJM<br>50N20<br>58N20|| |**VSD**<br>IF= IS, VGS= 0 V,<br>Pulse test, t<br>00 s, duty cycle d<br>2 %<br><<br>,<br>°|| |**trr**<br>TJ= 25 C<br>TJ= 125 C<br>**QRM**<br>TJ= 25 C<br>TJ= 125 C<br>**IRM**<br>TJ= 25 C<br>TJ= 125 C<br>IF= 25A,<br>-di/dt = 100 A/ s,<br>VR= 100 V<br>,<br>°<br>||1.5<br>2.6<br>19<br>23| ## **TO-268AA (D[3] PAK)** **==> picture [125 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> © 2000 IXYS All rights reserved<br>**----- End of picture text -----**<br> IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2 - 4 **IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20 IXFH/IXFM50N20 IXFT58N20** Fig. 1 Output Characteristics **==> picture [214 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 TJ = 25°C VGS = 10V<br>9V<br>80 8V<br>7V<br>70<br>6V<br>60<br>50<br>40<br>30<br>20 5V<br>10<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 3 RDS(on) vs. Drain Current **==> picture [213 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 2.6<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2 VGS = 10V<br>1.0 VGS = 15V<br>0.8<br>0 25 50 75 100 125 150 175<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Fig. 5 Drain Current vs. Case Temperature **==> picture [210 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>58N20<br>60<br>50N20<br>50<br>42N20<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 2 Input Admittance **==> picture [214 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60 TJ = 25°C<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig. 4 Temperature Dependence of Drain to Source Resistance **==> picture [220 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 2.50<br>2.25<br>2.00<br>1.75<br>ID = 25A<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage **==> picture [215 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>V<br>GS(th) BVDSS<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees C<br> - Normalized<br>G(th)<br>BV/V<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 3 - 4 **IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20 IXFH/IXFM50N20 IXFT58N20** ## Fig.7 Gate Charge Characteristic Curve ## Fig.8 Forward Bias Safe Operating Area **==> picture [210 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 14 VDS = 100V<br>12 ID = 50A<br>IG = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 25 50 75 100 125 150 175 200<br>Gate Charge - nCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br> Fig.9 Capacitance Curves **==> picture [215 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 4500<br>Ciss<br>4000<br>3500<br>3000 f = 1MHz<br>VDS = 25V<br>2500<br>2000<br>1500<br>Coss<br>1000<br>500 Crss<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br> **==> picture [233 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10µs<br>Limited by RDS(on)<br>100µs<br>10 1ms<br>10ms<br>100ms<br>1<br>1 10 100 200<br>VDS - Volts<br>Fig.10 Source Current vs. Source<br> to Drain Voltage<br>50<br>40<br>TJ = 125°C<br>30<br>20<br>10 TJ = 25°C<br>0<br>0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> Fig.11 Transient Thermal Impedance **==> picture [484 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br>Thermal Response - K/W<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 4 - 4
Updated at February 9, 2023
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