Image not available
Illustrative purposes only
IXFH52N30P
Power MOSFET, N Channel, 300 V, 52 A, 0.073 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar HiperFET
- Qualification: -
- Power Dissipation: 400W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 300V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 52A
- Drain Source On State Resistance: 0.073ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.7 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM ] Power MOSFETs HiPerFET[TM]**
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
## **IXFV52N30P IXFV52N30PS IXFH52N30P**
**V = 300V DSS I = 52A D25 R 73m DS(on) t 200ns rr**
## **PLUS220 (IXFV)**
|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|300|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1M|300|V|
|**VGSS**|Continuous|± 20|V|
|**VGSM**|Transient|± 30|V|
|**ID25**|TC = 25°C|52|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|150|A|
|**IA**|TC = 25°C|52|A|
|**EAS**|TC = 25°C|1|J|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C|10|V/ns|
|**PD**|TC = 25°C|400|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in|
|**FC**|Mounting Force (PLUS220) 11..65/2.5..14.6|11..65/2.5..14.6|N/lb|
|**Weight**|PLUS220 & PLUS220SMD|4 g|4 g|
||TO-247|6 g|6 g|
**==> picture [71 x 23] intentionally omitted <==**
**----- Start of picture text -----**<br>
G<br>DS<br>D (Tab)<br>**----- End of picture text -----**<br>
## **PLUS220SMD (IXFV_S)**
**==> picture [111 x 109] intentionally omitted <==**
**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>
G = Gate D = Drain S = Source Tab = Drain
## **Features**
- Fast Intrinsic Rectifier
- Avalanche Rated
- Low RDS(ON) and QG
- Low Package Inductance
## **Advantages**
|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>300|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>2.5<br>5.0|5.0<br>~~|~~|5.0<br>V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~<br>~~|~~|100<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>1 mA|25<br>1 mA<br>~~_~~|25<br>A<br>1 mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>73|73<br>~~_~~<br>~~a~~|73<br>m|
- High Power Density
- Easy to Mount Space Savings
## **Applications**
- Switch-Mode and Resonant-Mode
- Power Supplies DC-DC Converters Laser Drivers
- AC and DC Motor Drives
- Robotics and Servo Controls
DS99197G(10/13)
© 2013 IXYS CORPORATION, All Rights Reserved
## **IXFH52N30P IXFV52N30P IXFV52N30PS**
|**Symbol**<br>**Test Conditions**<br>(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Symbol**<br>**Test Conditions**<br>(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**|**Characteristic Values**<br>**Min. Typ. Max.**||**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|**PLUS220 (IXFV) Outline**|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfs**|VDS = 10V, ID= 0.5 • ID25, Note 1 20 30|, Note 1 20 30||, Note 1 20 30|, Note 1 20 30|S||Fi<br>Li||||||||oh||||
|**Ciss**<br>**Coss**|VGS = 0V, VDS= 25V, f = 1MHz|= 25V, f = 1MHz|||3490<br>550|pF<br>pF|||<br>fe||||||||||||
|**Crss**<br>**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|<br>60<br>20<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 52A<br>RG= 4(External)|||<br>60<br>20|130<br>24<br>ns<br> 22 ns<br>60<br>ns<br>20<br>ns|pF<br>ns<br>22 ns<br>ns<br>ns||i<br>TTF<br>wT<br>il<br>Hh<br>i<br>HH<br>I<br>|<br>net teat<br>LI} |||||||1 = Gate<br>2,4 = Drain<br>I)<br>Hh<br>iH<br>i<br>iY<br>a<br>fene<br>bh?|||||I)<br>Hh<br>iY|
|**Qg(on)**<br>**Qgs**<br>**Qgd**|VGS = 10V, VDS= 0.5 • VDSS, I<br>|||, ID= 0.5 • I|= 0.5 • ID25|110<br>25<br>53|nC<br>nC<br>nC||||||||3 = Source||||||
|**RthJC**|||||0.31 C/W|||||||||||||||
|**RthCS**|(TO-247 & PLUS220)||||0.25<br>C/W|||||||||||||||
|**Source-Drain Diode**|||||**Characteristic Values**|||||||||||||||
|TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**||**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|||||||||||||||
|**IS**|VGS= 0V||||52|A||||||||||||||
|**ISM**|Repetitive, pulse width limited by TJM||||150|A||||||||||||||
|**VSD**<br>**trr**<br>**QRM**<br>**IRM**<br>Note 1: Pulse test, t|IF= IS, VGS= 0V, Note 1<br>Note 1: Pulse test, t300s, duty cycle, d2%.<br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V||||1.5<br>160 200 ns<br>800<br>7|V<br>200 ns<br>nC<br>A||**TO-247 (IXFH) Outline**<br>e<br>P<br>1 = Gate<br>E<br>A<br>~~[~~= ~~1~~<br>t<br>4~~o~~r<br>41~~h Q~~<br>~~J os~~<br>~~Ro~~<br>i<br>| ~~| P~~s~~_~~<br>u1~~—~~<br>|<br>|<br>b1<br>|<br>Al ~~t~~e<br>><br>-~~| ”~~<br>ke||||||||||||
|**PLUS220SMD (IXFV_S) Outline**||||||||||||||||2 = Drain<br>3 = Source||||
||[ire<br>ine a<br>+<br>H<br>an<br>-<br>h<br>tha!<br>gy<br>\<br>1<br>rates<br>;<br>Tur,<br>LT<br>ef es||||Paz [ose[11s [eso | 3.00 |<br>Tb{035.0471<br>090, Leo |<br>pe<br>|<br>O88 |] O35] O70] 0.90 |<br>Tb {551 |.591 (14.00 [75.00 |<br>7 [Ste [539113.00 [13.70 |||||Dim.<br>Millimeter<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>A1<br>2.2<br>2.54<br>A2<br>2.2<br>2.6<br>b<br>1.0<br>1.4<br>b1<br>1.65<br>2.13<br>b2<br>2.87<br>3.12||||||||Inches<br>Min.<br>Max.<br>.185<br>.209<br>.087<br>.102<br>.059<br>.098<br>.040<br>.055<br>.065<br>.084<br>.113<br>.123||||
||il<br>7<br>tl<br>LL<br>Lge»<br>||||De|| .2008sc | S.os BSc__||||C<br>.4<br>D<br>20.80||||.8<br>21.46||||.016<br>.819||.031<br>.845||
||é|||||||||||||||||||
|1 = Gate<br>2,4 = Drain<br>3 = Source<br>rth<br>ee||||||||E<br>15.75<br>e<br>5.20<br>L<br>19.81||||16.26<br>5.72<br>20.32||||.610<br>0.205 <br>.780||.640<br> 0.225<br>.800||
|||||||||L1||||||4.50||||.177||
|||||||||P<br>3.55||||||3.65||.140||.144||
|||||||||Q<br>5.89||||||6.40||0.232||0.252||
|||||||||R<br>4.32||||||5.49||.170||.216||
|IXYS Reserves the Ri|IXYS Reserves the Riht to Chane Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|||S<br>6.15 BSC|6.15 BSC|6.15 BSC|6.15 BSC|6.15 BSC|6.15 BSC|6.15 BSC||242 BSC||242 BSC||
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
**IXFH52N30P IXFV52N30P IXFV52N30PS**
**==> picture [264 x 214] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>VGS = 10V<br>50<br> 8V<br>7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>
**Fig. 3. Output Characteristics @ TJ = 125ºC**
**==> picture [265 x 399] intentionally omitted <==**
**----- Start of picture text -----**<br>
VGS = 10V<br>50 8V<br> 7V<br>40<br>6V<br>30<br>20<br>10 5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 26A Value vs.<br>Drain Current<br>4.0<br>V GS = 10V<br>3.5<br>3.0 TJ = 125ºC<br>2.5<br>2.0<br>1.5 TJ = 25ºC<br>1.0<br>0.5<br>0 20 40 60 80 100 120 140<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
**==> picture [264 x 213] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>140 VGS = 10V<br> 9V<br>120<br>100 8V<br>80<br>7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>
**Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature**
**==> picture [256 x 396] intentionally omitted <==**
**----- Start of picture text -----**<br>
3.0<br>V GS = 10V<br>2.6<br>I D = 52A<br>2.2<br>I D = 26A<br>1.8<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>
© 2013 IXYS CORPORATION, All Rights Reserved
**IXFH52N30P IXFV52N30P IXFV52N30PS**
**==> picture [538 x 213] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>100 60<br>90<br>TJ = - 40ºC<br>50<br>80<br>70 25ºC<br>40<br>60<br>125ºC<br>50 30<br>TJ = 125ºC<br>40 25ºC<br> - 40ºC 20<br>30<br>20<br>10<br>10<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 10 20 30 40 50 60 70 80 90 100<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br>
**==> picture [265 x 425] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>160<br>140<br>120<br>100<br>80<br>60<br>40 T J = 125ºC TJ = 25ºC<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>Coss<br>f = 1 MHz Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>
**Fig. 10. Gate Charge**
**==> picture [253 x 186] intentionally omitted <==**
**----- Start of picture text -----**<br>
10<br>9 V DS = 150V<br> I D = 26A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>
**Fig. 12. Forward-Bias Safe Operating Area**
**==> picture [255 x 180] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>RDS(on) Limit<br>100<br>25µs<br>100µs<br>10<br>1ms<br>T J = 150ºC 10ms<br>T C = 25ºC DC<br>Single Pulse<br>1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
**IXFH52N30P IXFV52N30P IXFV52N30PS**
**Fig. 13. Maximum Transient Thermal Impedance** 10
**==> picture [525 x 346] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>Fig. 13. Maximum Transient Thermal Impedance<br>0.5 aaaaaa<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>Pulse Width - Second<br> - ºC / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_52N30P(6S) 9-26-13
**==> picture [157 x 46] intentionally omitted <==**
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →