IXFH50N85X

Power MOSFET, N Channel, 850 V, 50 A, 0.105 ohm, TO-247, Through Hole

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: X-Class HiperFET
Qualification: -
Power Dissipation: 890W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 850V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 50A
Drain Source On State Resistance: 0.105ohm
Gate Source Threshold Voltage Max: 5.5V

Delivery and price
Units per pack	250
Price	8.87 €
Current stock	100+
Lead time	30 days

Datasheet

## **X-Class HiPerFET[TM] Power MOSFET** 

## **IXFT50N85XHV IXFH50N85X IXFK50N85X** 

**V =   850V DSS I =   50A D25 R  105m  DS(on)** 

## **TO-268HV (IXFT)** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|850|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|850|V|
|**VGSS**|Continuous|30|V|
|**VGSM**<br>Transient<br>40<br>V<br>**ID25**<br>TC = 25C<br>50<br>A<br>~~a~~||||
|**IDM**|TC = 25C, Pulse Width Limited by TJM|125|A|
|**IA**|TC = 25C|25|A|
|**EAS**<br>**dv/dt**I<br>—|TC = 25C<br>IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns|2<br>150°C                                      50                   V/ns|J<br>150°C                                      50                   V/ns|
|**PD**|TC = 25C|890|W|
|**TJ**<br>**TJM**||-55 ... +150<br>150|C<br>C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**|Mounting Torque (TO-247 & TO-264)|1.13 / 10         Nm/lb.in||
|**Weight**<br>TO-247<br>TO-264|TO-268HV<br>4                         g<br>TO-247<br>6<br>TO-264<br>10                         g|4                         g<br>6<br>10                         g|4                         g<br>g<br>10                         g|



|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>850||V|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.5 5.5      V|5.5      V|5.5      V|
|**IGSS**<br>VGS =30V, VDS= 0V<br>||100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>3  mA|50<br>3  mA|50A<br>3  mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|105  m|105  m|



**==> picture [113 x 237] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S nN<br>D (Tab)<br>TO-247 (IXFH)<br>><br>Oo G A<br>D<br>S oO D (Tab)<br>TO-264 (IXFK)<br>G<br>D<br>D (Tab)<br>S<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Packages 

- High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount  Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 

DS100704D(12/16) 

© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXFT50N85XHV     IXFH50N85X IXFK50N85X** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                     19||32|S|
|**RGi**<br>Gate Input Resistance<br>||0.6||
|||||
|**Ciss**<br>**Coss**<br>**Crss**|<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>|4480<br>4863<br>116|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS||180<br>750|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1 (External)||27<br>30<br>69<br>14|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>||152<br>28<br>88|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-247<br>TO-264P||<br>0.21<br>0.15|0.14C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||50       A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||200       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br>   <br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V|218<br>1.85<br>17.0|ns<br>μC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFT50N85XHV      IXFH50N85X IXFK50N85X** 

**==> picture [263 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>50<br>VGS = 10V<br>45<br>8V<br>40<br>35<br>7V<br>30<br>25<br>20<br>15<br>6V<br>10<br>5<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [263 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>120<br>VGS = 10V<br>100 9V<br>80<br>8V<br>60<br>40 7V<br>20<br>6V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [536 x 425] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>50 3.8<br>V GS = 10V<br>45             8V 3.4 VGS = 10V<br>40 7V 3.0<br>35<br>2.6<br>30 I D = 50A<br>2.2<br>25 6V<br>1.8 I D = 25A<br>20<br>1.4<br>15<br>1.0<br>10<br>5V<br>5 0.6<br>4V<br>0 0.2<br>0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.0 1.3<br>VGS = 10V<br>3.5 1.2<br>T J  = 125ºC 1.1 BVDSS<br>3.0<br>1.0<br>2.5<br>0.9<br>2.0<br>0.8<br>TJ = 25ºC<br>1.5 VGS(th)<br>0.7<br>1.0 0.6<br>0.5 0.5<br>0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXFT50N85XHV     IXFH50N85X IXFK50N85X** 

**==> picture [264 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [264 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Input Admittance<br>80<br>70<br>60<br>50 TJ = 125ºC<br>           25ºC<br>        - 40ºC<br>40<br>30<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [540 x 438] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>60 160<br>TJ = - 40ºC 140<br>50<br>120<br>25ºC<br>40<br>100<br>125ºC<br>30 80<br>60<br>20<br>T J = 125ºC<br>40<br>10 T J   = 25ºC<br>20<br>0 0<br>0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 425V<br> I D = 25A<br>8  I G = 10mA     10,000 Ciss<br>6 1,000<br>Coss<br>4 100<br>2 10<br>f = 1 MHz  Crss<br>0 1<br>0 20 40 60 80 100 120 140 160 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br>IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


## **IXFT50N85XHV      IXFH50N85X IXFK50N85X** 

**==> picture [538 x 453] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>60 1000<br>50 R DS(on)  Limit<br>100<br>25 µs<br>40<br>100µs<br>30 10<br>20<br>1 1 ms<br> TJ = 150ºC<br>10  TC = 25ºC<br> Single Pulse  10 ms<br>DC<br>0 0.1<br>0 100 200 300 400 500 Fig. 15. Maximum Transient Thermal Impedance 600 700 800 10 100 1,000<br>1 VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>aaaaa<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION, All Rights Reserved 

## **IXFT50N85XHV     IXFH50N85X IXFK50N85X** 

**==> picture [103 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268HV Outline<br>**----- End of picture text -----**<br>


**==> picture [105 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
    PINS:<br>          1 - Gate  2 - Source<br>          3 - Drain<br>**----- End of picture text -----**<br>


**==> picture [433 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 Outline<br> A2  A2 DA E B  0P O 0K M  D B M+ A   TO-264 OutlineE A<br>Q<br>R   + S  D2   + Q S<br>D Tir Sq Lb 0P1 ; a 4 P|  D1 DR Q1<br> L1 1 2 3 ixys option | R1 ‘a 1 2 t 3 L1 :<br>C<br> E1<br>L<br>L<br>c<br> A1 c  b2 \ b |  b4O  J  M  C  A M+ | (oe e T PINS:  1 - Gate           2, 4 - Drain dT b1x2 M e IE b2 b . (me| A1 «<br>           3 - Source 4 0P<br>Terminals:                       2,4  = Drain  1  = Gate BACK SIDE<br>                      3  = Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_50N85X(S8) 2-03-16 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Updated at April 29, 2026

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →