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IXFH50N60P3
Power MOSFET, N Channel, 600 V, 50 A, 0.16 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.04W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 50A
- Drain Source On State Resistance: 0.16ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.64 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM ] HiperFET[TM] Power MOSFET** ## **IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|| |---|---|---|---|---| |**VDSS**<br>TJ = 25C to 150C<br>600<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>600<br>V<br>~~ee~~||||| |**VGSS**|Continuous|30||V| |**VGSM**|Transient|40||V| |**ID25**|TC = 25C<br>50|50||A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|125||A| |**IA**|TC = 25C|25||A| |**EAS**|TC = 25C|1||J| |**dv/dt**I<br>**PD**|IS IDM, VDD VDSS, TJ 150°C 35 V/ns<br>TC = 25C|150°C 35 V/ns<br>1040|150°C 35 V/ns|150°C 35 V/ns<br>W| |**TJ**||-55 ... +150|C|| |**TJM**||150|C|| |**Tstg**||-55 ... +150|C|| |**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering 300<br>Plastic Body for 10s 260|Maximum Lead Temperature for Soldering 300<br>Plastic Body for 10s 260||°C<br>°C| |**Md**|Mounting Torque (TO-247 & TO-3P)<br>1.13 / 10|1.13 / 10|Nm/lb.in|| |**Weight**|**Weight**TO-268<br>4.0|4.0||g| |TO-3P<br>TO-247 6.0 g|TO-3P<br>5.5<br>TO-247 6.0 g|5.5<br>TO-247 6.0 g|TO-247 6.0 g|g<br>TO-247 6.0 g| **V = 600V DSS I = 50A D25 R 160m DS(on)** ## **TO-268 (IXFT)** **==> picture [109 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>TO-3P (IXFQ)<br>**----- End of picture text -----**<br> **==> picture [89 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>S<br>D (Tab)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> ## **TO-247 (IXFH)** - G = Gate D = Drain S = Source Tab = Drain ## **Features** - Fast Intrinsic Rectifier - Avalanche Rated - Low RDS(ON) and QG - Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>600|~~—~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.0<br>5.0 V|5.0 V<br>~~—~~<br>~~_~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~-~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>2|25<br>2<br>~~7~~|25A<br>2mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>160 m|160 m<br>~~—~~|160 m| - High Power Density - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters - Laser Drivers - AC and DC Motor Drives - Robotics and Servo Controls DS100310B(04/14) © 2014 IXYS CORPORATION, All Rights Reserved ## **IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3** |**Symbol**<br>(TJ= 25C|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic**<br>**Min. Typ. **|**Characteristic**<br>**Min. Typ. **|**Values**<br>**Max.**|| |---|---|---|---|---|---| |**gfs**|VDS = 20V, ID= 0.5 • ID25, Note 1|32|55||S| |**Ciss**|||6300||pF| |**Coss**|VGS = 0V, VDS= 25V, f = 1MHz||630||pF| |**Crss**|||2.5||pF| |**RGi**|Gate Input Resistance<br>||1.0||| |**td(on)**<br>**tr**|<br>**Resistive Switching Times**|<br>|31<br>20|<br>|ns<br>ns| |**td(off)**|<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||62||ns| |**tf**|<br>RG= 1(External)||17||ns| |**Qg(on)**|||94||nC| |**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||27||nC| |**Qgd**|||23||nC| |**RthJC**||||0.12 C/W|| |**RthCS**|(TO-247 & TO-3P)<br>||0.25|C/W|| ## **Source-Drain Diode** |**IS**<br>VGS= 0V|||50<br>A| |---|---|---|---| |**ISM**<br>Repetitive,|Pulse Width Limited by TJM||200<br>A| |**VSD**<br>IF= IS, VGS=|0V, Note 1||1.4<br>V| |**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V||<br>11|250 ns<br>A| |||<br>1.1|<br>μC| Note 1. Pulse test, t 300s, duty cycle, d 2%. **==> picture [157 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>Terminals: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [167 x 137] intentionally omitted <==** **TO-3P Outline** **==> picture [148 x 290] intentionally omitted <==** ## **TO-247 Outline** |||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| ||||||||**1**|||**2 3**||P||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||~~e~~||||||||| |Terminals:||||||||1 - Gate|||||2 - Drain|||||| |||||||||3 - Source||||||||||| ||Dim.|||||Millimeter|||||||Inches|||||| ||||||Min.|||||Max.|||Min.|||Max.||| |||A||||4.7||||5.3|||.185|||.209||| |||A1||||2.2||||2.54|||.087|||.102||| |||A2||||2.2||||2.6|||.059|||.098||| |||b||||1.0||||1.4|||.040|||.055||| |||b1|||1.65|||||2.13|||.065|||.084||| |||b~~2~~|||2.87|||||3.12|||.113|||.123||| |||C||||||.4||.8|||.016|||.031||| |||D|||20.80|||||21.46|||.819|||.845||| |||E|||15.75|||||16.26|||.610|||.640||| |||e|||5.20|||||5.72||0.205 0.225||||||| |||L|||19.81|||||20.32|||.780|||.800||| |||L1||||||||4.50||||||.177||| |||P|||3.55|||||3.65|||.140|||.144||| |||Q|||5.89|||||6.40||0.232 0.252||||||| |||R|||4.32|||||5.49|||.170|||.216||| |||S|||6.15|||||BSC|||242 BSC|||||| IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3** **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>50<br>V GS = 10V<br>45 7V<br>40<br>35<br>30<br>6V<br>25<br>20<br>15<br>10<br>5<br>5V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>100<br>V GS = 10V<br>90 8V<br>80<br>7V<br>70<br>60<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [538 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 25A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>50 3.4<br>45 V GS 7V = 10V 3.0 VGS = 10V<br>40<br>6V 2.6 I D = 50A<br>35<br>2.2<br>30<br>I D = 25A<br>25 1.8<br>20<br>1.4<br>15<br>5V 1.0<br>10<br>0.6<br>5<br>4V<br>0 0.2<br>0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.0 60<br>VGS = 10V<br>2.6 50<br>TJ = 125ºC<br>2.2 40<br>1.8 30<br>1.4 20<br>TJ = 25ºC<br>1.0 10<br>0.6 0<br>0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved ## **IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3** **==> picture [260 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>80<br>70<br>60 TJ = 125ºC<br> 25ºC<br> - 40ºC<br>50<br>40<br>30<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>140<br>120<br>100<br>80<br>60<br>40 TJ = 125ºC<br>TJ = 25ºC<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [260 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>120<br>T J = - 40ºC<br>100<br>80 25ºC<br>60<br>125ºC<br>40<br>20<br>0<br>0 10 20 30 40 50 60 70 80<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 300V<br> I D = 25A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [529 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 1000<br>Ciss<br>1,000 R DS(on) Limit<br>100<br>Coss<br>100<br>100µs<br>10<br>10 T J = 150ºC<br>Crss TC = 25ºC<br>f = 1 MHz Single Pulse<br>1ms<br>1 1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3** **Fig. 13. Maximum Transient Thermal Impedance** 1 **==> picture [524 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.2<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N60P3(W8)03-10-11 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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