Image not available
Illustrative purposes only
IXFH50N50P3
Power MOSFET, N Channel, 500 V, 50 A, 0.125 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: Polar3 HiPerFET
- Qualification: -
- Power Dissipation: 960W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 50A
- Drain Source On State Resistance: 0.125ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 5.69 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM ] HiperFET[TM] Power MOSFET** ## **IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|| |---|---|---|---|---| |**VDSS**<br>TJ = 25C to 150C<br>500<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>500<br>V<br>~~ee~~||||| |**VGSS**|Continuous|30||V| |**VGSM**|Transient|40||V| |**ID25**|TC = 25C<br>50|50||A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|150||A| |**IA**|TC = 25C|25||A| |**EAS**|TC = 25C|500||mJ| |**dv/dt**I<br>**PD**|IS IDM, VDD VDSS, TJ 150°C 35 V/ns<br>TC = 25C|150°C 35 V/ns<br>960|150°C 35 V/ns|150°C 35 V/ns<br>W| |**TJ**||-55 ... +150|C|| |**TJM**||150|C|| |**Tstg**||-55 ... +150|C|| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300||°C| |**TSOLD**|Plastic Body for 10s<br>260 °C|260 °C|260 °C|260 °C| |**Md**<br>**Weight**<br>TO-3P|Mounting Torque (TO-247 & TO-3P)<br>1.13 / 10<br>**Weight**TO-268<br>4.0<br>TO-3P<br>5.5|1.13 / 10<br>4.0<br>5.5|Nm/lb.in<br>g<br>g|| |TO-247 6.0 g|TO-247 6.0 g|TO-247 6.0 g|TO-247 6.0 g|TO-247 6.0 g| **V = 500V DSS I = 50A D25 R 125m DS(on)** ## **TO-268 (IXFT)** **==> picture [112 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** - Fast Intrinsic Rectifier - Avalanche Rated - Low RDS(ON) and QG - Low Package Inductance ## **Advantages** - High Power Density |**Symbol**<br>(T= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 1mA<br>500|~~—~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.0<br>5.0 V|5.0 V<br>~~—~~<br>~~_~~|5.0 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~-~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 125C<br>1.5|25<br>1.5<br>~~7~~|25A<br>1.5mA| |**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>125 m|125 m<br>~~—~~|125 m| - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies - DC-DC Converters - Laser Drivers - AC and DC Motor Drives - Robotics and Servo Controls DS100461C(3/17) © 2017 IXYS CORPORATION, All Rights Reserved ## **IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3** |**Symbol**<br>(TJ= 25C|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic**<br>**Min. Typ. **|**Characteristic**<br>**Min. Typ. **|**Values**<br>**Max.**|| |---|---|---|---|---|---| |**gfs**|VDS = 20V, ID= 0.5 • ID25, Note 1|27|45||S| |**Ciss**|||4335||pF| |**Coss**|VGS = 0V, VDS= 25V, f = 1MHz||540||pF| |**Crss**|||12||pF| |**RGi**|Gate Input Resistance<br>||1.4||| |**td(on)**<br>**tr**|<br>**Resistive Switching Times**|<br>|25<br>8|<br>|ns<br>ns| |**td(off)**|<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||53||ns| |**tf**|<br>RG= 2(External)||10||ns| |**Qg(on)**|||85||nC| |**Qgs**|VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25||21||nC| |**Qgd**|||30||nC| |**RthJC**||||0.13 C/W|| |**RthCS**|(TO-247 & TO-3P)<br>||0.25|C/W|| ## **Source-Drain Diode** |**IS**<br>VGS= 0V|||50<br>A| |---|---|---|---| |**ISM**<br>Repetitive,|Pulse Width Limited by TJM||200<br>A| |**VSD**<br>IF= IS, VGS=|0V, Note 1||1.4<br>V| |**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 25A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V||<br>12|250 ns<br>A| |||<br>880|<br>nC| Note 1. Pulse test, t 300s, duty cycle, d 2%. **==> picture [167 x 137] intentionally omitted <==** **==> picture [157 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 Outline<br>Terminals: 1 - Gate 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [162 x 314] intentionally omitted <==** **----- Start of picture text -----**<br> TO-3P Outline<br>**----- End of picture text -----**<br> ## **TO-247 Outline** |||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||||||||||| ||||||||**1**|||**2 3**||P||||||| |||||||||||||||||||| |||||||||||||||||||| |||||||||||~~e~~||||||||| |Terminals:||||||||1 - Gate|||||2 - Drain|||||| |||||||||3 - Source||||||||||| ||Dim.|||||Millimeter|||||||Inches|||||| ||||||Min.|||||Max.|||Min.|||Max.||| |||A||||4.7||||5.3|||.185|||.209||| |||A1||||2.2||||2.54|||.087|||.102||| |||A2||||2.2||||2.6|||.059|||.098||| |||b||||1.0||||1.4|||.040|||.055||| |||b1|||1.65|||||2.13|||.065|||.084||| |||b~~2~~|||2.87|||||3.12|||.113|||.123||| |||C||||||.4||.8|||.016|||.031||| |||D|||20.80|||||21.46|||.819|||.845||| |||E|||15.75|||||16.26|||.610|||.640||| |||e|||5.20|||||5.72||0.205 0.225||||||| |||L|||19.81|||||20.32|||.780|||.800||| |||L1||||||||4.50||||||.177||| |||P|||3.55|||||3.65|||.140|||.144||| |||Q|||5.89|||||6.40||0.232 0.252||||||| |||R|||4.32|||||5.49|||.170|||.216||| |||S|||6.15|||||BSC|||242 BSC|||||| IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3** **==> picture [538 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>50<br>VGS = 10V VGS = 10V<br>45 100 8V<br>40 7V<br>80<br>35<br>7V<br>30 6V<br>60<br>25<br>20 6V<br>40<br>15<br>10 20<br>5V<br>5 5V<br>0 0<br>0 1 2 3 4 5 6 7 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - AmperesID - AmperesID<br>**----- End of picture text -----**<br> **==> picture [265 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>50<br>VGS = 10V<br>45 7V<br>40<br>6V<br>35<br>30<br>25<br>20 5V<br>15<br>10<br>5<br>4V<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 25A Value vs.<br>Drain Current<br>3.4<br>V GS = 10V<br>3.0<br>2.6 TJ = 125 [o] C<br>2.2<br>1.8<br>1.4<br>TJ = 25 [o] C<br>1.0<br>0.6<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature** **==> picture [257 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br>VGS = 10V<br>3.0<br>2.6<br>2.2 I D = 50A<br>1.8<br>I D = 25A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved ## **IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3** **==> picture [261 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>70<br>60<br>TJ = 125 [o] C<br>50<br> 25 [o] C<br> - 40 [o] C<br>40<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>160<br>140<br>120<br>100<br>80<br>60<br>TJ = 125 [o] C<br>40<br>T J = 25 [o] C<br>20<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [261 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>90<br>T J = - 40 [o] C<br>80<br>70<br>60 25 [o] C<br>50<br>125 [o] C<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [246 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br> I D = 25A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [532 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1000<br>f = 1 MHz RDS(on) Limit<br>10,000 Ciss 100 25μs<br>100μs<br>1,000 10<br>Coss<br>100 1<br>1ms<br>10 0.1 TJ = 150 [o] C 10ms<br>Crss TC = 25 [o] C 100ms<br>Single Pulse<br>1 0.01<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3** **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [527 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br> Fig. 13. Maximium Transient Thermal Impedance<br>0.2 aaaa<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N50P3(W7/P7) 3-29-17-A **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →