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IXFH42N60P3
Power MOSFET, N Channel, 600 V, 42 A, 0.185 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Po
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 830W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 42A
- Drain Source On State Resistance: 0.185ohm
- Gate Source Threshold Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.05 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **Polar3[TM] HiperFET[TM] Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier **==> picture [209 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> V = 600V<br>DSS<br>I = 42A<br>D25<br>R 185m <br>DS(on)<br>D<br>G<br>TO-247<br>S<br>**----- End of picture text -----**<br> ## **IXFH42N60P3** **==> picture [503 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |Symbol|Test Conditions|Maximum Ratings|G| |D|Tab| |VDSS|TJ|= 25C to 150C|600|V|S| |VDGR|TJ|= 25C to 150C, RGS = 1M|600|V| |G = Gate|D = Drain| |VGSS|Continuous| 30|V|S = Source Tab = Drain| |VGSM|Transient| 40|V| |ID25|TC|= 25C|42|A| |IDM|TC|= 25C, Pulse Width Limited by TJM|100|A| |IA|TC|= 25C|21|A| |EAS|TC|= 25C|1|J|Features| |dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C 35 V/ns||International Standard Package| |PD|TC|= 25|C|830|W||Fast Intrinsic Rectifier| |||Avalanche Rated| |T|-55 ... +150|C| |TJJM|150|C||Low RLow Package InductanceDS(ON) and QGLow Package InductanceDS(ON) and QG| |T|-55 ... +150|C| |stg| |TL|Maximum Lead Temperature for Soldering 300|°C|Advantages| |TSOLD|1.6 mm (0.062in.) from Case for 10s 260|°C| |Md|Mounting Torque|1.13 / 10|Nm/lb.in||High Power DensityEasy to Mount| |Weight|6|g|| **----- End of picture text -----**<br> - International Standard Package - Fast Intrinsic Rectifier Avalanche Rated DS(ON) and QG and QGG Low RLow Package InductanceDS(ON) and QGLow Package InductanceDS(ON) and QG - Easy to Mount - Space Savings ## **Applications** **==> picture [353 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Symbol|Test Conditions Characteristic Values| |(TJ = 25C Unless Otherwise Specified)|Min. Typ. Max.| |BVDSS|VGS|= 0V, ID = 1mA|600|||V| |VGS(th)|VDS|= VGS, ID = 4mA|3.0|5.0 V||| |IGSS|VGS|= 30V, VDS = 0V||||100 nA| |IDSS|VDS|= VDSS, VGS = 0V|25 A| |TJ = 125C|1.5|a|mA| |RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|185 m|_|| **----- End of picture text -----**<br> - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100296D(1/20) © 2020 IXYS CORPORATION, All Rights Reserved ## **IXFH42N60P3** |**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**| |**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1 25|42|S| |**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5150<br>500<br>2.8|pF<br>pF<br>pF| |**RGi**Gate Input Resistance|1.0|| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|32<br>23<br>60<br>17|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Q**<br>|78<br>23<br>20|nC<br>nC<br>nC| |**gd**<br>||| |**RthJC**<br>**RthCS**<br>|<br>0.21|0.15 C/W<br>C/W| ## **Source-Drain Diode** **Symbol Test Conditions Characteristic Values** (TJ = 25C Unless Otherwise Specified) **Min. Typ. Max.** |||| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**| |||| |**IS**<br>VGS= 0V||42<br>A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||168<br>A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.3<br>V| |**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 21A, -di/dt = 100A/µs<br>VR= 100V, VGS = 0V|<br>12.4 <br>1.4|250 ns<br> A<br>µC| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFH42N60P3** **==> picture [166 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br> **==> picture [250 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>V GS = 10V<br>40 7V<br>35<br>30 6V<br>25<br>20<br>15<br>10<br>5 5V<br>0<br>0 1 2 3 4 5 6 7 8 9<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125ºC** **==> picture [255 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>V GS = 10V<br>40 7V<br>35<br>6V<br>30<br>25<br>20<br>15 5V<br>10<br>5<br>4V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 21A Value vs.<br>Drain Current<br>3.0 V GS = 10V<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4 T J = 25ºC<br>1.0<br>0.6<br>0 10 20 30 40 50 60 70 80<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [254 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>V GS = 10V<br>70<br>60 7V<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 21A Value vs. Junction Temperature** **==> picture [257 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br>VGS = 10V<br>3.0<br>2.6<br>I D = 42A<br>2.2<br>1.8 I D = 21A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved **IXFH42N60P3** **==> picture [261 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>70<br>60<br>50 TJ = 125ºC<br> 25ºC<br> - 40ºC<br>40<br>30<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>120<br>100<br>80<br>60<br>40<br>TJ = 125ºC<br>20 T J = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **==> picture [261 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>80<br>TJ = - 40ºC<br>70<br>60<br>25ºC<br>50<br>125ºC<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [251 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 300V<br> I D = 21A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [527 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 100<br>R DS(on) Limit 100µs<br>C iss<br>1,000<br>C oss<br>100 10<br>10<br>Crss T T J C = 150ºC = 25ºC<br>f = 1 MHz Single Pulse<br>1ms<br>1<br>1<br>0 5 10 15 20 25 30 35 40<br>10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFH42N60P3** **Fig. 12. Maximum Transient Thermal Impedance** **==> picture [526 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br> Fig. 13. Maximium Transient Thermal Impedance<br>0.2 aaaa<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_42P60P3(W7)03-24-11 ## **IXFH42N60P3** **==> picture [170 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 Outline<br>[-B=| a<br>ae|7 @xrllThi [S] 02 oP] aK<br>0 Tr a a<br>er<br>12 3c ont<br>ul<br>T Ets] tf |<br>i ie<br>M a ia>bf 1 - Gate<br>2,4 - Drain<br>[él J DICTA WD) 3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **IXFH42N60P3** ~~sd~~ Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved
Updated at April 29, 2026
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