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IXFH36N60P
Power MOSFET, N Channel, 600 V, 36 A, 0.19 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation P
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 650W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 36A
- Drain Source On State Resistance: 0.19ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 5.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM ] HiPerFET Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **IXFH 36N60P V = 600 V DSS IXFK 36N60P I = 36 A D25 IXFT 36N60P R ≤ 190 m Ω DS(on) t ≤ 200 ns rr** |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-247 (IXFH)**|**TO-247 (IXFH)**|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C||600||V|||||||| |**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ||600||V|||||||| |**VGSS**<br>**VGSM**|Continuous<br>Transient||±30<br>±40||V<br>V||G D S||D (TAB)|D (TAB)||| |**ID25**<br>**IDM**|TC = 25°C<br>TC = 25°C, pulse width limited by TJM||36<br>80||A<br>A|**TO-268 (IXFT) Case Style**||||||| |**IAR**|TC = 25°C||36||A|||||||| |**EAR**<br>**EAS**<br>**dv/dt**|TC = 25°C<br>TC = 25°C<br>IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||50<br>1.5<br>20||mJ<br>J<br>V/ns||G<br>S<br>D (TAB)<br>>|||||| ||TJ ≤150°C, RG= 4Ω|||||||||||| |**PD**|TC = 25°C||650||W|**TO-264 AA (IXFK)**||||||| |**TJ**||-55 ... +150|||°C|||||||| |**TJM**|||150||°C|||||||| |**Tstg**||-55 ... +150|||°C|||||||| |**Md**|Mounting torque (TO-247 & TO-264) 1.13/10|Mounting torque (TO-247 & TO-264) 1.13/10|Mounting torque (TO-247 & TO-264) 1.13/10|Nm/lb.in.||||||||| |**Weight**|TO-247 6<br>TO-268|TO-247 6<br>5|TO-247 6<br>5||g<br>g||S<br>G<br>D|||(TAB)||| |TO-264 10|TO-264 10|TO-264 10|TO-264 10||g|G = Gate|G = Gate<br>D = Drain|D = Drain|D = Drain|||| |**TL**|1.6 mm (0.062 in.) from case for 10 s||300||°C|S = Source|S = Source<br>Tab = Drain||Tab = Drain|||| |**TSOLD**|Plastic body for 10 s||260||°C|**Features**||||||| |**Symbol**<br>**Test Conditions**<br>(TJ= 25°C, unless otherwise specified)<br>**BVDSS**<br>VGS = 0 V, ID= 250µA||**Characteristic Values**<br>**Min. Typ.**<br>**Max.**<br>600<br>V<br>||||||l <br>l <br>l|International standard packages<br> Fast recovery diode<br> Unclamped Inductive Switching (UIS)|||International standard packages<br>Unclamped Inductive Switching (UIS)|International standard packages<br>Unclamped Inductive Switching (UIS)|International standard packages<br>Unclamped Inductive Switching (UIS)| |**VGS(th)**<br>**IGSS**|VDS = VGS, ID= 4 mA<br>VGS =±30 VDC, VDS= 0|3.0|5.0<br>±200<br>~~|~~<br>~~_~~||V<br>nA|l|rated<br> Low package inductance<br>- easy to drive and to protect|||||| |**IDSS**|VDS = VDSS|||100|µA|||||||| ||VGS= 0 V<br>TJ= 125°C||1000||µA|**Advantages**||||||| |**RDS(on)**|VGS = 10 V, ID= 0.5 ID25|||190|mΩ|l|Easy to mount|||||| ||Pulse test, t≤300µs, duty cycle d≤2 %|||||l|Space savings|||||| |||||||l|High power density|||||| > l International standard packages - l Unclamped Inductive Switching (UIS) rated - l Low package inductance - easy to drive and to protect DS99383E(02/06) © 2006 IXYS All rights reserved **IXFH 36N60P IXFK 36N60P IXFT 36N60P** |**Symbol**|**Test Conditions**|(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||**Min.**||**Typ.**||**Max.**||||||E|||A2|‘tr| |**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**|VDS = 20 V; ID= 0.5 ID25, pulse test<br>VGS = 0 V, VDS= 25 V, f = 1 MHz||25||39<br>5800<br>570<br>30|||S<br>pF<br>pF<br>pF|||1 2 3<br>4<br>oa<br>gs<br>7<br>Of<br>otfp pT<br>|<br>op<br>ul+<br>L||||||| |**td(on)**<br>**tr**<br>**td(off)**|VGS = 10 V, VDS= 0.5 ID25<br>RG<br>=2Ω(External)||||30<br>25<br>80|||ns<br>ns<br>ns||||b1<br>‘<br>--||||<br>b2<br>Le.||Al|L<br>kc| |**tf**|||||22|||ns|||Dim.||Millimeter|||Inches|| |**Qg(on)**|||||102|||nC|||A||Min.<br>4.7|Max.<br>5.3||Min.<br>.185|Max.<br>.209| |**Qgs**<br>**Qgd**|VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||||34<br>36|||nC<br>nC|||A1<br>A2<br>b||2.2<br>2.2<br>1.0|2.54<br>2.6<br>1.4||.087<br>.059<br>.040|.102<br>.098<br>.055| ||||||||||||b1||1.65|2.13||.065|.084| |**RthJC**|||||||0.19|°C/W|||b2||2.87|3.12||.113|.123| |**RthCS**|TO-247||||0.21|||°C/W|||C<br>D||.4<br>20.80|.8<br>21.46||.016<br>.819|.031<br>.845| |**RthCS**|TO-264|0.15|0.15|0.15|0.15|0.15|0.15|0.15°C/W|||E||15.75|16.26||.610|.640| ||||||||||||e||5.20|5.72||0.205|0.225| ||||||||||||L||19.81|20.32||.780|.800| |**Source-Drain Diode**|**Source-Drain Diode**||**Characteristic Values**||||||||L1|||4.50|||.177| |||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|||||||∅P<br>Q||3.55<br>5.89|3.65<br>6.40||.140<br>0.232|.144<br> 0.252| |**Symbol**|**Test Conditions**||**Min.**||**Typ.**||**Max.**||||R||4.32|5.49||.170|.216| |**IS**|VGS= 0 V||||||36|A|||S||6.15 BSC|||242|BSC| |**ISM**<br>**VSD**<br>**trr**|Repetitive<br>IF= IS, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d<br>IF= 25A, -di/dt = 100 A/µs|s, duty cycle d≤2 %|||||80<br>1.5<br>200|A<br>V<br>ns<br>**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**<br>ea<br>--—!<br>| — ae Ter<br>rh<br>(@X Gs.<br>+<br>too<br>7 at<br>D<br>4<br>qt<br>oe<br>rit||||||||| |**QRM**|VR= 100V||||0.8|||µC|||||1<br>2<br>3|4||Li|| |**IRM**|**RM**|**RM**|**RM**|**RM**|**RM**6.0|||A||||||=|=|=|=_|| **==> picture [93 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXFT)Outline<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXFH 36N60P IXFK 36N60P IXFT 36N60P** **==> picture [243 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>36<br>VGS = 10V<br>32<br> 7V<br>28<br>24<br>20 6V<br>16<br>12<br>8<br>4 5V<br>0<br>0 1 2 3 4 5 6 7<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [229 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 36<br>VGS = 10V<br>32<br> 7V<br>28<br>24 6V<br>20<br>16<br>12<br>5V<br>8<br>4<br>0<br>0 2 4 6 8 10 12 14 16<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID** **==> picture [229 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br>3.0 VGS = 10V<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4<br>TJ = 25ºC<br>1.0<br>0.6<br>0 10 20 30 40 50 60 70 80 90<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> ## **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [231 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>VGS = 10V<br>80<br> 8V<br>70<br>60 7V<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** **==> picture [234 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 3.1<br>2.8 VGS = 10V<br>2.5<br>2.2<br>1.9 ID = 36A<br>1.6<br>1.3 ID = 18A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [232 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> - © 2006 IXYS All rights reserved **IXFH 36N60P IXFK 36N60P IXFT 36N60P** **Fig. 7. Input Admittance** **==> picture [232 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 55<br>50<br>45<br>40<br>35<br>30<br>25<br>20 TJ = 125ºC<br> 25ºC<br>15<br> -40ºC<br>10<br>5<br>0<br>3.5 4 4.5 5 5.5 6 6.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [231 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>20<br>10 T J = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [231 x 408] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60 T J = -40ºC<br> 25ºC<br>50 125ºC<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70<br>I D - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDS = 300V<br>8 ID = 18A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Q G - nanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Maximum Transient Thermal Resistance** **==> picture [496 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 1.00<br>Ciss<br>1000<br>Coss 0.10<br>100<br>f = 1MHz<br>Crss<br>10 0.01<br>0 5 10 15 20 25 30 35 40 0.1 1 10 100 1000<br>VD S - Volts Pulse Width - milliseconds<br>C / W<br>º<br> -<br>( t h ) J C<br>R<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions.
Updated at April 27, 2026
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