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This product is RoHS compilant

IXFH36N60P

Power MOSFET, N Channel, 600 V, 36 A, 0.19 ohm, TO-247, Through Hole

  • Manufacturer: IXYS SEMICONDUCTOR
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Power Dissipation: 650W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 650W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 0.19ohm
  • Transistor Case Style: TO-247
  • Drain Source Voltage Vds: 600V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 36A
  • Drain Source On State Resistance: 0.19ohm
  • Gate Source Threshold Voltage Max: 5V
Delivery and price
Units per pack 250
Price 8.27 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet