IXFH36N50P

Power MOSFET, N Channel, 500 V, 36 A, 0.17 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
MSL: MSL 1 - Unlimited
SVHC: Lead (17-Jan-2023)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: Polar HiPerFET
Qualification: -
Power Dissipation: 540W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 36A
Drain Source On State Resistance: 0.17ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	4.74 €
Current stock	10+
Lead time	30 days

Datasheet

## **Polar[TM ] HiPerFET[TM] IXFV36N50PS Power MOSFETs IXFV36N50P IXFH36N50P IXFT36N50P** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**||
|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|||500||V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|||500||V|
|**VGSS**|Continuous|||±30||V|
|**VGSM**|Transient|||±40||V|
|**ID25**|TC = 25°C|36|36|36||A|
|**IDM**|TC = 25°C,  Pulse Width Limited by TJM|||90||A|
|**IA**|TC = 25°C|||36||A|
|**EAS**|TC = 25°C|||1.5||J|
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C|||10||V/ns|
|**PD**|TC = 25°C|||540||W|
|**TJ**||-55 ... +150|-55 ... +150|||°C|
|**TJM**||||150||°C|
|**Tstg**||-55 ... +150|-55 ... +150|||°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s|||300||°C|
|**TSOLD**|Plastic Body for 10s|||260||°C|
|**Md**|Mounting Torque  (TO-247)||1.13/10||Nm/lb.in.||
|**FC**|Mounting Force    (PLUS220)                    20..120 /4.5..27                N/lb.|Mounting Force    (PLUS220)                    20..120 /4.5..27                N/lb.|Mounting Force    (PLUS220)                    20..120 /4.5..27                N/lb.||Mounting Force    (PLUS220)                    20..120 /4.5..27                N/lb.||
|**Weight**|PLUS220|||4.0||g|
|TO-268|TO-268|||4.0                     g|4.0                     g|4.0                     g|
||TO-247|||6.0|6.0|6.0g|
|**Symbol**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|||**Test Conditions                                             Characteristic Values**||
|(TJ= 25°C Unless Otherwise Specified)|C Unless Otherwise Specified)|**Min.       Typ.      Max.**||**Min.       Typ.      Max.**|**Min.       Typ.      Max.**||
|**BVDSS**|VGS = 0V, ID= 250μA<br>500|500||||V|
|**VGS(th)**<br>**IGSS**<br>**IDSS**<br>T|VDS = VGS, ID= 4mA<br>3.0<br>VGS =±30V, VDS= 0V<br>VDS =  VDSS, VGS=  0V<br>TJ= 125°C|3.0<br>500   μA|5.0    V<br>±<br>25<br>500   μA|5.0    V<br>±<br>25<br>500   μA<br>~~=~~<br>~~a~~|5.0    V<br>±100  nA<br>25<br>500   μA|5.0    V<br>100  nA<br>25μA<br>500   μA|
|**RDS(on)**|VGS = 10V, ID= 0.5 • ID25, Note 1|||170  m|170  m|170  mΩ|



**V =   500V DSS I =   36A D25 R ≤ 170m Ω DS(on) t ≤ 200ns rr** 

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PLUS220SMD (IXFV...S)<br>G<br>S<br>D (Tab)<br>PLUS220 (IXFV)<br>G<br>DS D (Tab)<br>**----- End of picture text -----**<br>


## **TO-268 (IXFT)** 

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**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG 

**Advantages** High Power Density . Easy to Mount Space Savings 

© 2011 IXYS CORPORATION, All Rights Reserved 

DS99364F(07/11) 

**IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25,  Note 1                    23|36|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5500<br>510<br>40|pF<br>pF<br>pF|
|**td(on)**<br> <br>**t**r<br> <br>**td(off)**<br> <br>**t**f<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3Ω(External)|25<br>27<br>75<br>21|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|93<br>30<br>31|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>(TO-247 & PLUS220)|<br>0.25|0.23°C/W<br>°C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||36     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||144     A|
|**VSD**<br>IF= IS, VGS= 0V,  Note 1||1.5     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM** <br>IF= 25A, -di/dt = 100A/μs<br>VR= 100V, VGS= 0V|<br>0.8<br>8.0|200   ns<br>μC<br> A|



Note      1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS** 

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TO-268 Outline<br>**----- End of picture text -----**<br>


||Terminals:|Terminals:|Terminals:|Terminals:|Terminals:|Terminals:|Terminals:|Terminals:|Terminals:|1 - Gate<br>3 - Source|1 - Gate<br>3 - Source|1 - Gate<br>3 - Source|1 - Gate<br>3 - Source|1 - Gate<br>3 - Source|1 - Gate<br>3 - Source|1 - Gate<br>3 - Source|2,4  - Drain|2,4  - Drain|2,4  - Drain|2,4  - Drain|2,4  - Drain|2,4  - Drain|2,4  - Drain|2,4  - Drain||||
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|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|~~a~~|
|**TO-247 Outline**|||||||||**TO-247 Outline**<br>~~E~~||||||||||||~~A~~2|||~~t~~h||||
||||**1       2       3**<br>41~~h~~<br>~~+~~ct <br>\<br>L1||||||||∅P<br>**1       2       3**<br>~~fi~~e<br>s<br> ~~Ose~~—~~s~~<br>—><br>|<br>O|||||||||||||||||
||||L||||' <br>b|||~~=~~||||||~~e~~<br>l<br>~~LO~~|||||AM|||~~f~~e<br>Fe||e|e|
||Terminals: 1 - Gate<br>3 - Source||||||||||||1 - Gate<br>3 - Source||||||||2 - Drain|||||||
|||Dim.||||||||Millimeter|||||||||||Inches|||||||
|||||||||||Min.||||||Max.|||||Min.|||Max.||||
||||A|||||||4.7||||||5.3|||||.185|||.209||||
||||A1|||||||2.2||||||2.54|||||.087|||.102||||
||||A2<br>b<br>b1<br>b~~2~~|||||||2.2<br>1.0<br>1.65<br>2.87||||||2.6<br>1.4<br>2.13<br>3.12|||||.059<br>.040<br>.065<br>.113|||.098<br>.055<br>.084<br>.123||||
||||C<br>D<br>E<br>e||||||.4<br>20.80<br>15.75<br>5.20||||||.8<br>21.46<br>16.26<br>5.72||||.016<br>.819<br>.610<br>0.205|||||.031<br>.845<br>.640<br> 0.225||||
||||L<br>L1||||||19.81||||||20.32<br>4.50||||||.780|||.800<br>.177||||
||||∅P<br>Q|||||||3.55<br>5.89||||||3.65<br>6.40|||.140<br>0.232|||||.144<br> 0.252||||
||||R|||||||4.32||||||5.49|||||.170|||.216||||
||||S|||||||6.15||BSC|||||||||242|||BSC||||



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 PLUS220 (IXFV) Outline<br>**----- End of picture text -----**<br>


## **PLUS220SMD (IXFV_S)  Outline** 

© 2011 IXYS CORPORATION, All Rights Reserved 

**IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>36 80<br>VGS = 10V V GS = 10V<br>        7V    70<br>30<br>7V<br>60<br>24<br>6V 50<br>6.5V<br>18 40<br>30<br>12<br>5V 6V<br>20<br>6 5.5V<br>10<br>4V<br>5V<br>0 0<br>0 1 2 3 4 5 6 7 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 18A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºCJ = 125ºC = 125ºC Junction Temperature<br>36 3.4<br>V        7V  GS        7V  GSGS = 10V V GS = 10V<br>3.0<br>30 6V<br>2.6<br>I D = 36A D = 36A = 36A<br>24<br>2.2<br>5.5V I  D  = 18A<br>18 1.8<br>1.4<br>12<br>5V<br>1.0<br>6<br>4.5V 0.6<br>0 0.2<br>0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125ºCJ = 125ºC = 125ºC<br>Junction Temperature<br>36 3.4<br>V        7V  GS        7V  GSGS = 10V V GS = 10V<br>3.0<br>30 6V<br>2.6<br>I D = 36A D = 36A = 36A<br>24<br>2.2<br>5.5V I  D  = 18A<br>18 1.8<br>1.4<br>12<br>5V<br>1.0<br>6<br>4.5V 0.6<br>0 0.2<br>0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150<br>VDS - VoltsDS - Volts - Volts TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Fig. 6. Maximum Drain Current vs.<br>Drain Current Case Temperature<br>3.4 40<br>V GS = 10V<br>35<br>3.0<br>TJ = 125ºC<br>30<br>2.6<br>25<br>2.2<br>20<br>1.8<br>TJ = 25ºC 15<br>1.4<br>10<br>1.0 5<br>0.6 0<br>0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>IDD<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS** 

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Fig. 7. Input Admittance<br>50<br>TJ = 125ºC<br>40          25ºC<br>- 40ºC<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>TJ  = 25ºC<br>20<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>70<br>T J = - 40ºC<br>60<br>50 25ºC<br>40<br>125ºC<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80 90<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  V DS = 250V<br> I D =18A<br>8  I  G  = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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10,000 100<br>RDS(on) Limit<br>C iss<br>25µs<br>1,000<br>100µs<br>Coss 10<br>1ms<br>100<br>DC 10ms<br>TJ = 150ºC<br>f = 1 MHz  C rss Single Pulse  T C  = 25ºC<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION, All Rights Reserved 

**IXFH36N50P IXFV36N50P IXFT36N50P IXFV36N50PS** 

**Fig. 13. Maximum Transient Thermal Impedance** 

1 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>0.4 aaaa<br>0.1<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF:  F_36N50P (7J) 7-15-11-E 

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Updated at April 27, 2026

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