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IXFH320N10T2
Power MOSFET, N Channel, 100 V, 320 A, 3500 µohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: TrenchT2 HiperFET
- Qualification: -
- Power Dissipation: 1kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 320A
- Drain Source On State Resistance: 3500µohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 300 |
| Price | 8.46 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **TrenchT2[TM ] HiperFET[TM] Power MOSFET** ## **IXFH320N10T2 IXFT320N10T2** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|| |---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 175°C||||100||V| |**VDGR**|TJ = 25°C to 175°C, RGS= 1MΩ||||100||V| |**VGSS**|Continuous||||±20||V| |**VGSM**|Transient||||±30||V| |**ID25**|TC = 25°C (Chip Capability)||||320||A| |**ILRMS**|Lead Current Limit, RMS||||160||A| |**IDM**|TC = 25°C, Pulse Width Limited by TJM||||800||A| |**IA**|TC = 25°C||||160||A| |**EAS**|TC = 25°C||||1.5||J| |**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤175°C 15 V/ns||175°C 15 V/ns|175°C 15 V/ns|175°C 15 V/ns|175°C 15 V/ns|| |**PD**|TC = 25°C||||1000||W| |**TJ**|||-55 ... +175||||°C| |**TJM**|||||175||°C| |**Tstg**|||-55 ... +175||||°C| |**TL**|1.6mm (0.062in.) from Case for 10s|1.6mm (0.062in.) from Case for 10s|||300||°C| |**Tsold**|Plastic Body for 10 seconds||||260||°C| |**Md**|Mounting Torque (TO-247)||1.13 / 10|1.13 / 10||Nm/lb.in.|| |**Weight**|**Weight**TO-247||6|6|6||g| |TO-268 4 g|TO-268 4 g|TO-268 4 g|TO-268 4 g|TO-268 4 g|TO-268 4 g|TO-268 4 g|TO-268 4 g| |**Symbol**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|**Test Conditions Characteristic Values**|||**Test Conditions Characteristic Values**|| |(TJ= 25°C Unless Otherwise Specified)|C Unless Otherwise Specified)|**Min. Typ. Max.**|**Min. Typ. Max.**||**Min. Typ. Max.**|**Min. Typ. Max.**|| |**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**|VGS = 0V, ID= 1mA<br>VDS = VGS, ID= 250μA<br>VGS =±20V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|100<br>2.0<br>TJ= 150°C|100<br>2.0<br>1.75|4.0 V<br>±<br>25<br>1.75<br>~~—~~<br>~~| |~~<br>~~||i~~||4.0 V<br>±200 nA<br>25<br>1.75|V<br>4.0 V<br>200 nA<br>25μA<br> mA| |**RDS(on)**|VGS = 10V, ID= 100A, Notes 1 & 2|= 100A, Notes 1 & 2||3.5 m|3.5 m|3.5 m|3.5 mΩ| **V = 100V DSS I = 320A D25 R ≤ 3.5m Ω DS(on)** **==> picture [109 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br> ## **TO-268 (IXFT)** **==> picture [51 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source Tab = Drain ## **Features** International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Fast Intrinsic Diode Low R DS(on) ## **Advantages** Easy to Mount Space Savings High Power Density ## **Applications** Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100237A(5/12) © 2012 IXYS CORPORATION, All Rights Reserved **IXFH320N10T2 IXFT320N10T2** |**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Symbol**<br>**Test Conditions Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**| |---|---|---| |**gfs** VDS= 10V, ID= 60A, Note 1 80|130|S| |**Ciss**<br> <br>**Coss**VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|26<br>2250<br>450|nF<br>pF<br>pF| |**RGi**<br>Gate Input Resistance<br>|1.48|Ω| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 100A<br>RG= 1Ω(External)|36<br>46<br>73<br>177|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|430<br>110<br>125|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCH**<br>TO-247|<br>0.21|0.15°C/W<br>°C/W| |**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)<br>**Min. Typ. Max.**| |---|---|---| |**IS**VGS= 0V||320<br>A| |**ISM**Repetitive, Pulse Width Limited by TJM||1200<br>A| |**VSD**IF= 100A, VGS= 0V, Note 1||1.2<br>V| Notes: - ≤ 300μs, duty cycle, d ≤ 2%. **TO-247 (IXFH) Outline** ||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||| ||||||||||||||||||| ||||||||||||||||||| ||||||||||||||||||| ||||||||||||||||||| ||||||||||||||||||| ||||||||**1**|||**2 3**||∅P|||||| ||||||||||||||||||| ||||||||||||||||||| ||||||||||||||||||| |~~e~~<br>Terminals: 1 - Gate<br>3 - Source<br>Dim.<br>Millimeter||||||||||||2 - Drain<br>Inches|||||| |||A<br>A1|||Min.<br>4.7<br>2.2|||||Max.<br>5.3<br>2.54||Min.<br>.185<br>.087|||Max.<br>.209<br>.102||| |||A2<br>b||||2.2<br>1.0||||2.6<br>1.4||.059<br>.040|||.098<br>.055||| |||b1<br>b~~2~~|||1.65<br>2.87|||||2.13<br>3.12||.065<br>.113|||.084<br>.123||| |||C||||||.4||.8||.016|||.031||| |||D|||20.80|||||21.46||.819|||.845||| |||E|||15.75|||||16.26||.610|||.640||| |||e|||5.20|||||5.72||0.205 0.225|||||| |||L|||19.81|||||20.32||.780|||.800||| |||L1<br>∅P<br>Q|||3.55<br>5.89|||||4.50<br>3.65<br>6.40||.177<br>.140<br>.144<br>0.232 0.252|||||| |||R<br>S|||4.32<br>6.15|||||5.49<br> BSC||.170<br>.216<br>242 BSC|||||| ## **TO-268 (IXFT) Outline** **==> picture [157 x 116] intentionally omitted <==** **==> picture [131 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Terminals: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 **IXFH320N10T2 IXFT320N10T2** **Fig. 1. Output Characteristics @ TJ = 25ºC** **==> picture [255 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 320<br>VGS = 15V<br>280 10V<br> 8V<br> 7V<br>240<br>200<br>6V<br>160<br>120<br>5V<br>80<br>40<br>4V<br>0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 150ºC<br>350<br>V GS = 15V<br> 10V<br>300 8V<br> 7V<br>250<br>6V<br>200<br>150<br>5V<br>100<br>50<br>4V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 160A<br> vs. Drain Current<br>3.2<br> V GS = 10V<br>2.8<br>TJ = 175ºC<br>2.4<br>2.0<br>1.6<br>1.2 T J = 25ºC<br>0.8<br>0 50 100 150 200 250 300 350 400<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ TJ = 25ºC** **==> picture [254 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>VGS = 15V<br>350 10V<br> 7V<br>300<br>250 6V<br>200<br>150 5V<br>100<br>50<br>4V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature** **==> picture [256 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>V GS = 10V<br>2.4<br>2.0 I D = 320A<br>I D = 160A<br>1.6<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Drain Current vs. Case Temperature** **==> picture [250 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160<br>External Lead Current limit<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2012 IXYS CORPORATION, All Rights Reserved **IXFH320N10T2 IXFT320N10T2** **==> picture [529 x 428] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance Fig. 8. Transconductance<br>220 240<br>200 T J = - 40ºC<br>180 200<br>160 25ºC<br>160<br>140 T J = 150ºC<br> 25ºC 150ºC<br>120<br> - 40ºC 120<br>100<br>80<br>80<br>60<br>40 40<br>20<br>0 0<br>2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 100 120 140 160 180 200 220 240<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>350 10<br>9 VDS = 50V<br>300 I D = 160A<br>8 I G = 10mA<br>250 7<br>6<br>200<br>5<br>150<br>T J = 150ºC 4<br>100 3<br>T J = 25ºC 2<br>50<br>1<br>0 0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 100 150 200 250 300 350 400 450<br>VSD - Volts QG - NanoCoulombs<br> - Amperes - Siemens<br>ID f s<br>g<br> - Volts<br> - AmperesIS VGS<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [532 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 100,000 1,000<br>f = 1 MHz RDS(on) Limit<br>25µs<br>Ciss<br>10,000 100 External Lead Limit 100µs<br>1ms<br>Coss<br>1,000 10<br>T J = 175ºC<br>Crss T C = 25ºC 10ms<br>Single Pulse 100ms<br>DC<br>100 1<br>0 5 10 15 20 25 30 35 40 1 10 100<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFH320N10T2 IXFT320N10T2** **==> picture [518 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature Drain Current<br>300 300<br> R G = 1Ω , V GS = 10V<br>250 I DD = 200A 250 VDS = 50V<br>200 200<br> RGG = 1Ω , VGS = 10VGS = 10V = 10V T J = 125ºC<br>150 VDS = 50V DS = 50V = 50V 50V V 150<br>TJ = 25ºC<br>100 100<br>I DD = 100A<br>50 50<br>0 0<br>25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 120 140 160 180 200<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade ID - Amperes<br>Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br> Gate Resistance Junction Temperature<br>600 130 450 120<br> t r t d(on) - - - - 400 t f td(off) - - - - 110<br>500 T J = 125ºC, V GS = 10V 110 RG = 1Ω, VGS = 10V<br> VDS = 50V VDS = 50V<br>350 100<br>400 90<br>300 I D = 200A 90<br>300 70<br>I D = 100A 250 80<br>I D = 200A<br>200 50 200 I D = 100A 70<br>100 30 150 60<br>0 10 100 50<br>1 2 3 4 5 6 7 8 9 10 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Drain Current Gate Resistance<br>500 110 900 500<br>450 105 800 t f td(off) - - - - 450<br> T J = 125ºC, V GS = 10V<br>400 100 700 VDS = 50V 400<br>350 95<br>600 350<br>300 t f td(off)d(off)(off)off)) - - - - TJ = 125ºCJ = 125ºC = 125ºC 90 I D = 200A<br> RG = 1Ω, VGS = 10VG = 1Ω, VGS = 10V = 1Ω, VGS = 10VGS = 10V = 10V 500 300<br>250 V DS = 50V 85<br>400 250<br>200 80<br>150 TJ = 25ºCJ = 25ºC = 25ºC 75 300 200<br>200 I D = 100A 150<br>100 70<br>50 65 100 100<br>0 60 0 50<br>40 60 80 100 120 140 160 180 200 1 2 3 4 5 6 7 8 9 10<br>ID - AmperesD - Amperes - Amperes RG - Ohms<br> - Nanosecondsr<br>t<br> d(on)t d(off)t<br>t - Nanosecondsr t - Nanosecondsf<br> - Nanoseconds - Nanoseconds<br> d(off)tt d(off)t<br> - Nanosecondsff - Nanosecondsf<br>t t<br> - Nanoseconds - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [253 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>300<br>250 I DD = 200A<br>200<br> RGG = 1Ω , VGS = 10VGS = 10V = 10V<br>150 VDS = 50V DS = 50V = 50V 50V V<br>100<br>I DD = 100A<br>50<br>0<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees CentigradeJ - Degrees Centigrade - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> **==> picture [245 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 500 110<br>450 105<br>400 100<br>350 95<br>300 t f td(off)d(off)(off)off)) - - - - TJ = 125ºCJ = 125ºC = 125ºC 90<br> RG = 1Ω, VGS = 10VG = 1Ω, VGS = 10V = 1Ω, VGS = 10VGS = 10V = 10V<br>250 V DS = 50V 85<br>200 80<br>TJ = 25ºCJ = 25ºC = 25ºC<br>150 75<br>100 70<br>50 65<br>0 60<br>40 60 80 100 120 140 160 180 200<br>ID - AmperesD - Amperes - Amperes<br> d(off)tt<br> - Nanosecondsff<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> © 2012 IXYS CORPORATION, All Rights Reserved **IXFH320N10T2 IXFT320N10T2** **==> picture [538 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 19. Maximum Transient Thermal Impedance<br>1.000<br> Fig. 19. Maximum Transient Thermal Impedance<br>0.300 dfafas<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_320N10T2(98)02-01-10 **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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