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IXFH30N50
Power MOSFET, HiPerFET, N Channel, 500 V, 30 A, 0.16 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 360W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30A
- Drain Source On State Resistance: 0.16ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.5 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**V I R** DSS D25 DS(on) **IXFH/IXFT 30N50 500 V 30 A 0.16 IXFH/IXFT 32N50** a **500 V 32 A 0.15** .@) ## **HiPerFET[TM] Power MOSFETs** N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS[TM] Family **t 250 ns** < rr |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---|---| |**VDSS**|TJ = 25 C to 150 C||500|V| |**VDGR**|TJ = 25 C to 150 C; RGS= 1 M||500|V| |**VGS**|Continuous||20|V| |**VGSM**<br>**ID25**|Transient<br>TC= 25 C|30<br>30N50|V<br>30|A| |||32N50|32|A| |**IDM**|TC= 25 C|30N50|120|A| ||pulse width limited by TJM|32N50|128|A| |**IAR**|TC= 25 C|30N50|30|A| |||32N50|32|A| |**EAS**<br>TC= 25 C<br>1.5<br>J<br>**EAR**<br>ID= 25 C<br>45<br>mJ<br>**dv/dt**<br>IS<br>IDM, di/dt 100 A/ s, VDD<br>VDSS,<br>5<br>V/ns<br>ee<br>rr||||| ||TJ<br>150 C, RG= 2|||| |**PD**|TC= 25 C||360|W| |**TJ**|||-55 ... +150|C| |**TJM**|||150|C| |**Tstg**<br>**TL**|1.6 mm (0.062 in.) from case for 10 s||-55 ... +150<br>300|C<br>C| |**Md**<br>**Weight**|Mounting torque||1.13/10<br>6|Nm/lb.in.<br>g| ## **TO-247 AD (IXFH)** **==> picture [127 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> D D (TAB)<br>Ss<br>TO-268 (D3) Case Style<br>G<br>(TAB)<br>S<br>,<br>G = Gate, D = Drain,<br>S = Source, TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** - International standard packages - Low RDS (on) HDMOS[TM] process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - easy to drive and to protect ## **Symbol Test Conditions Characteristic Values** - Fast intrinsic Diode |**Symbol**|**Symbol**<br>**Test Conditions**|**Characteristic Values**<br>easy to drive and to protect<br>• Fast intrinsic Diode| |---|---|---| |||(TJ= 25 C, unless otherwise specified)| |||**min.**<br>**typ.**<br>**max.**<br>**Applications**| |**VDSS**|VGS= 0 V, ID= 1 mA|500<br>V<br>• DC-DC converters| ||VDSStemperature coefficient|0.102<br>%/K<br>• Battery chargers| |||• Switched-mode and resonant-mode| |**VGS(th)**|VDS= VGS, ID= 4 mA|2<br>4<br>V<br>power supplies| ||VGS(th)temperature coefficient|-0.206<br>%/K<br>• DC choppers| |**IGSS**<br>**IDSS**<br>**RDS(on)**|VGS= 20 VDC, VDS= 0<br>100<br>nA<br>VDS= 0.8 • VDSS<br>TJ= 25 C<br>200<br>A<br>VGS= 0 V<br>TJ= 125 C<br>1<br>mA<br>VGS= 10 V, ID= 15A<br>32N50<br>0.15<br>30N50<br>0.16<br>Pulse test, t 300 s, duty cycle d 2 %<br>• AC motor control<br>• Temperature and lighting controls<br>**Advantages**<br>• Easy to mount with 1 screw (TO-247)<br>(isolated mounting screw hole)<br>• Space savings<br>•High power density<br>+<br>|<br>7<br>:<br>7<br>P|:<br>OQ<br><<br>u|| - Switched-mode and resonant-mode power supplies - Temperature and lighting controls - Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) - High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97518H (6/99) © 2000 IXYS All rights reserved 1 - 4 **IXFH 30N50 IXFH 32N50 IXFT 30N50 IXFT 32N50** ## **Symbol Test Conditions** ## **Characteristic Values** |||(TJ= 25 C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)| |---|---|---|---|---|---|---| ||||**min. typ.**|**min. typ.**|**max.**|| |**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**<br>**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**Qg(on)**<br>**Qgs**<br>**Qgd**|VDS <br>|<br>||= 10 V; ID= 0.5 ID25, pulse test<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>RG= 2<br>(External)<br>VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>Q|18<br>5200<br>640<br>240|28<br>35<br>42<br>110<br>26<br>227<br>29<br>110<br>Sie<br>oy<br>-|5700<br>750<br>310<br>45<br>50<br>140<br>35<br>300<br>40<br>145|S<br>pF<br>pF<br>pF<br>ns<br>ns<br>ns<br>ns<br>nC<br>nC<br>nC| |**RthJC**|||||0.35|K/W| |**RthCK**||(TO-247 Case Style)||0.25||K/W| |**Source-Drain Diode**|**Source-Drain Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---|---| |||(TJ= 25 C, unless otherwise specified)||||| |**Symbol**|**Test Conditions**|**min.**|**typ. max.**|**typ. max.**||| |**IS**|VGS = 0 V|30N50||30||A| |||32N50||32||A| |**ISM**|Repetitive;|30N50||120||A| ||pulse width limited by TJM|32N50||128||A| |**VSD**|IF<br>= IS, VGS= 0 V,|||1.5||V| ||Pulse test, t<br>00 s, duty cycle d<br>2 %<br>y<|||||| |**trr**||TJ= 25 C||250|ns|| ||IF= IS|TJ= 125 C||400|ns|| |**QRM**|TJ= 25 C<br>TJ= 25 C<br>-di/dt = 100 A/ s,<br>VR= 100 V<br>H<br>:||0.85||H|C| |**IRM**|||8|||A| ## **TO-268AA (D[3] PAK)** **==> picture [112 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> Dim. Millimeter Inches<br>Min. Max. Min. Max.<br>A 4.9 5.1 .193 .201<br>A1 2.7 2.9 .106 .114<br>A2 .02 .25 .001 .010<br>b 1.15 1.45 .045 .057<br>b 2 1.9 2.1 .75 .83<br>C .4 .65 .016 .026<br>D 13.80 14.00 .543 .551<br>E 15.85 16.05 .624 .632<br>E1 13.3 13.6 .524 .535<br>e 5.45 BSC .215 BSC<br>H 18.70 19.10 .736 .752<br>L 2.40 2.70 .094 .106<br>L1 1.20 1.40 .047 .055<br>L2 1.00 1.15 .039 .045<br>L3 0.25 BSC .010 BSC<br>L4 3.80 4.10 .150 .161<br>**----- End of picture text -----**<br> ## **TO-247 AD (IXFH) Outline** |Dim.|Millimeter<br>Min.<br>Max.<br>=|Inches<br>Min.<br>Max.| |---|---|---| |A<br>B|19.81 20.32<br>20.80 21.46|20.32<br>0.780 0.800<br>21.46<br>0.819 0.845| |C<br>D|15.75 16.26<br>3.55<br>3.65|16.26<br>0.610 0.640<br>3.65<br>0.140 0.144| |E<br>F|4.32<br>5.49<br>5.4<br>6.2|5.49<br>0.170 0.216<br>6.2<br>0.212 0.244| |G<br>H|1.65<br>2.13<br>-<br>4.5|2.13<br>0.065 0.084<br>4.5<br>-<br>0.177| |J<br>K|1.0<br>1.4<br>10.8<br>11.0|1.4<br>0.040 0.055<br>11.0<br>0.426 0.433| |L<br>M|4.7<br>5.3<br>0.4<br>0.8|5.3<br>0.185 0.209<br>0.8<br>0.016 0.031| |N|1.5<br>2.49|2.49<br>0.087 0.102| ## **Min. Recommended Footprint** IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 © 2000 IXYS All rights reserved 2 - 4 **IXFH 30N50 IXFH 32N50 IXFT 30N50 IXFT 32N50** Figure 2. Output Characteristics at 125[O] C Figure 1. Output Characteristics at 25[O] C **==> picture [479 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 8070 TJ = 25 [O] C 9V VGS=10V 60 TJ = 125 [O] C 9V VGS=10V<br> 8V 50 8V<br> 7V<br>60 7V<br>6V 6V<br>40<br>50<br>40 30<br>30 5V<br>5V 20<br>20<br>10<br>10<br>0 0<br>0 4 8 12 16 20 0 4 8 12 16 20<br>VDS - Volts VDS - Volts<br>Figure 3. RDS(on) normalized to 15A/25 [O] C vs. ID Figure 4. RDS(on) normalized to 15A/25DS(on) normalized to 15A/25 [[O]]<br>2.8 2.8<br>VGS = 10VGS = 10V= 10V VGS = 10V<br>2.4 2.4<br>Tj=125 [[0]] C ID = 32A<br>2.0 2.0<br>ID = 16A<br>1.6 1.6<br>Tj=25 [[0]] C<br>1.2 1.2<br>0.8 0.8<br>0 10 20 30 40 50 60 25 50 75 100 125 150<br>ID - AmperesD - Amperes - Amperes TJ - Degrees C<br>Figure 5. Drain Current vs. Case Temperature<br>Figure 6. Admittance Curves<br>40<br>50<br>IXFH32N50<br>32<br>40<br>IXFH30N50<br>24<br>30<br>TJ = 125 [o] C<br>16<br>20<br>TJ = 25 [o] C<br>8<br>10<br>0<br>0<br>-50 -25 0 25 50 75 100 125 150<br>0 2 4 6 8<br>TC - Degrees CC - Degrees C - Degrees C VGS - Volts<br> - AmperesID - AmperesID<br> - Normalized<br>DS(ON) DS(ON)<br>R<br> - Amperes<br>IDD - AmperesID<br>**----- End of picture text -----**<br> normalized to 15A/25[[O]] C vs. T Figure 4. RDS(on) normalized to 15A/25DS(on) normalized to 15A/25 J **==> picture [218 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>VGS = 10VGS = 10V= 10V<br>2.4<br>Tj=125 [[0]] C<br>2.0<br>1.6<br>Tj=25 [[0]] C<br>1.2<br>0.8<br>0 10 20 30 40 50 60<br>ID - AmperesD - Amperes - Amperes<br>Figure 5. Drain Current vs. Case Temperature<br>40<br>IXFH32N50<br>32<br>IXFH30N50<br>24<br>16<br>8<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees CC - Degrees C - Degrees C<br> - Normalized<br>DS(ON)<br>R<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 3 - 4 **IXFH 30N50 IXFH 32N50 IXFT 30N50 IXFT 32N50** Figure 7. Gate Charge Figure 8. Capacitance Curves **==> picture [503 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 14 4500<br>12 Vds=300V 4000 F = 1MHz<br>ID=30A 3500 Ciss<br>10 IG=10mA<br>3000<br>8 2500<br>6 2000<br>Coss<br>1500<br>4<br>1000<br>2 Crss<br>500<br>0 0<br>0 50 100 150 200 250 300 0 5 10 15 20 25<br>Gate Charge - nC VDS - Volts<br>Figure 9. Forward Voltage Drop of the<br> Intrinsic Diode<br>100 30<br>VGS= 0V 1 ms<br>80 10<br>10 ms<br>60<br>100 ms<br>40 TJ=125 [O] C 1<br>TC = 25 [O] C DC<br>20<br>TJ=25 [O] C<br>0 0.1<br>0.4 0.6 0.8 1.0 1.2 10 100 500<br>VSD - Volts VDS - Volts<br>Figure 10. Transient Thermal Resistance<br>0.40<br>0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>Pulse Width - Seconds<br> - Volts<br>GS<br>V<br>Capacitance - pF<br> - Amperes<br> - AmperesID ID<br> - K/W<br>JC<br>R(th)<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 4 - 4
Updated at April 27, 2026
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