Image not available
Illustrative purposes only
IXFH26N60P
Power MOSFET, N Channel, 600 V, 26 A, 0.27 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: PolarHV
- Qualification: -
- Power Dissipation: 460W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 26A
- Drain Source On State Resistance: 0.27ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.52 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM] Power MOSFET** N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated ## **IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS** **V = 600 V DSS I = 26 A D25 R ≤ 270 m Ω DS(on) t ≤ 200 ns rr** ||||Ss|||| |---|---|---|---|---|---|---| |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|**TO-247 (IXFH)**|**TO-247 (IXFH)**|**TO-247 (IXFH)**| |||||**TO-247 (IXFH)**|**TO-247 (IXFH)**|**TO-247 (IXFH)**| |**VDSS**|TJ= 25°C to 150°C|600|V|||| |**VDGR**|TJ= 25°C to 150°C; RGS= 1 MΩ|600|V|||| |**VGSS**<br>**VGSM**|Continuous<br>Transient|±30<br>±40|V<br>V|G D S|G D S|G D S| |**ID25**|TC= 25°C|26|A|||| |**IDM**|TC= 25°C, pulse width limited by TJM|65|A|**TO-268 (IXFT)**||| |**IAR**|TC= 25°C|13|A|||| |**EAR**|TC= 25°C|40|mJ|||| |**EAS**|TC= 25°C|1.2|J||G|| |**dv/dt**|IS≤IDM, di/dt≤100 A/μs, VDD ≤VDSS<br>TJ ≤150°C, RG= 5Ω|10|V/ns|**PLUS220 (IXFV)**|**PLUS220 (IXFV)**|**PLUS220 (IXFV)**| |**PD**|TC= 25°C|460|W|||| |**TJ**||-55 ... +150|°C|||| |**TJM**<br>**Tstg**||150<br>-55 ... +150|°C<br>°C|G|D|S| |**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s|300<br>260|°C<br>°C|**PLUS220SMD (IXFV...S)**|**PLUS220SMD (IXFV...S)**|**PLUS220SMD (IXFV...S)**| |**Md**|Mounting torque (TO-3P&TO-247)|1.13/10|Nm/lb.in.|||| |**FC**|Mounting force (PLUS220)|11..65/2.5..15|N/lb|||| |**Weight**<br>TO-268<br>PLUS220 & PLUS220SMD|TO-247<br>TO-268<br>PLUS220 & PLUS220SMD|6.0<br>5.0<br>4.0|g<br>g<br>g|G|S<br>\ §|| ## **TO-247 (IXFH)** **==> picture [114 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S<br>D (TAB)<br>**----- End of picture text -----**<br> **==> picture [69 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXFV)<br>**----- End of picture text -----**<br> **==> picture [113 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D S D (TAB)<br>**----- End of picture text -----**<br> ## **PLUS220SMD (IXFV...S)** **==> picture [124 x 40] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S D (TAB)<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br> |(T= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |**BVDSS**<br>VGS = 0 V, ID= 250μA<br>600||V| |**VGS(th)**<br>VDS = VGS, ID= 4 mA<br>2.5|~~7~~|5.0<br>V| |**IGSS**<br>VGS =±30 V, VDS= 0 V||±100<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 125°C||25<br>μA<br>250<br>μA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300μs, duty cycle d≤2 %||270<br>mΩ| ## **Features** Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect ## **Advantages** Easy to mount Space savings High power density DS99435E(12/06) © 2006 IXYS All rights reserved **IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS** ## **Symbol Test Conditions Characteristic Values** |||(TJ= 25°C,|unless otherwise specified)|unless otherwise specified)|unless otherwise specified)|unless otherwise specified)| |---|---|---|---|---|---|---| ||||**Min.**|**Typ.**|**Max.**|| |**gfs**|VDS|= 20 V; ID= 0.5 ID25, pulse test|16|26||S| |**Ciss**||||4150||pF| |**Coss**|VGS|= 0 V, VDS= 25 V, f = 1 MHz||400||pF| |**Crss**||||27||pF| |**td(on)**||||25||ns| |**tr**|VGS|= 10 V, VDS= 0.5 ID25||27||ns| |**td(off)**|RG|= 5Ω(External)||75||ns| |**tf**||||21||ns| |**Qg(on)**||||72||nC| |**Qgs**|VGS|= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||27||nC| |**Qgd**||||24||nC| |**RthJC**|||||0.27|°C/W| |**RthCs**|(PLUS220 & TO-247)<br>|||0.21||°C/W| |**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---| |||(TJ= 25°C, unless|otherwise specified)||| |**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|| |**IS**|VGS= 0 V|||26|A| |**ISM**|Repetitive|||78|A| |**VSD**|IF= IS, VGS= 0 V, pulse test|||1.5|V| |**trr**|IF= 25A, -di/dt = 100 A/μs||150|200|ns| |**IRM**|VR= 100V; VGS= 0 V||7||A| |**QRM**|||0.7||μC| ## **Characteristic Curves** **Fig. 1. Output Characteristics @ 25ºC** **==> picture [230 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 24 VGS = 10V<br> 7V<br>20<br>16<br>12 6V<br>8<br>4<br>5V<br>0<br>0 1 2 3 4 5 6 7<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [231 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>54 VGS = 10V<br> 7V<br>48<br>42<br>6V<br>36<br>30<br>24<br>18<br>12<br>5V<br>6<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 ## **IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS** **==> picture [242 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics<br>@ 125ºC<br>24 V GS = 10V<br> 7V<br>20<br>16 6V<br>12<br>8<br>5V<br>4<br>0<br>0 2 4 6 8 10 12 14 16<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID** **==> picture [230 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>V GS = 10V TJ = 125º C<br>2.8<br>2.4<br>2<br>1.6<br>1.2 TJ = 25º C<br>0.8<br>0 10 20 30 40 50 60<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **Fig. 7. Input Admittance** **==> picture [235 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br> TJ = 125º C<br>20<br> 25º C<br>15 -40º C<br>10<br>5<br>0<br>4 4.5 5 5.5 6 6.5 7 7.5<br>VG S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** **==> picture [235 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> 3.2<br>VGS = 10V<br>2.8<br>2.4<br>2<br>ID = 26A<br>1.6<br>ID = 13A<br>1.2<br>0.8<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case<br>Temperature<br>30<br>27<br>24<br>21<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [234 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40 TJ = -40º C<br> 25º C<br>35<br> 125º C<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS** **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [235 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30 TJ = 125 º C<br>20 T J = 25º C<br>10<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VS D - Volts<br>Fig. 11. Capacitance<br>10000<br>f = 1MHz<br>Ciss<br>1000<br>Coss<br>100<br>C rss<br>10<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br> - Amperes<br>S<br>I<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br> ## **Fig. 10. Gate Charge** **==> picture [228 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 300V<br>8 ID = 13A<br>7 I G = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 12. Maximum Transient Thermal Resistance** **==> picture [414 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS** **==> picture [273 x 317] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |TO-247 AD (IXFH) Outline|TO-268 (IXFT) Outline| |A|||r| |th|G)|t|os|f||| |>|tT|1 2 3|SS —F|I| |||oP| |ut||||||||||| |tT|t|Lu| |62| |b|Le|—as| |Dim.|Millimeter|Inches| |Min.|Max.|Min.|Max.| |A|4.7|5.3|.185|.209| |A1|2.2|2.54|.087|.102| |A2|2.2|2.6|.059|.098| |b|1.0|1.4|.040|.055| |b1|1.65|2.13|.065|.084| |b2|2.87|3.12|.113|.123| |C|.4|.8|.016|.031| |D|20.80|21.46|.819|.845| |E|15.75|16.26|.610|.640| |e|5.20|5.72|0.205|0.225| |L|19.81|20.32|.780|.800| |L1|4.50|.177| |∅|P|3.55|3.65|.140|.144| |Q|5.89|6.40|0.232|0.252| |R|4.32|5.49|.170|.216| |S|6.15|BSC|242|BSC| **----- End of picture text -----**<br> **==> picture [104 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXFV) Outline<br>**----- End of picture text -----**<br> **==> picture [136 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220SMD (IXFV_S) Outline<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →