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IXFH26N50Q
Power MOSFET, HiPerFET, N Channel, 500 V, 26 A, 0.2 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 300W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.2ohm
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 26A
- Drain Source On State Resistance: 0.2ohm
- Gate Source Threshold Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 5.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **HiPerFET[TM] Power MOSFETs** ## **Q-Class** **V I R** DSS D25 DS(on) **IXFH/IXFT 24N50Q 500 V 24 A 0.23 Ω IXFH/IXFT 26N50Q 500 V 26 A 0.20 Ω t ≤ 250 ns** rr N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt |**Symbol**|**Test Conditions**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**| |---|---|---|---|---|---| |**VDSS**|TJ|= 25°C to 150°C||500|V| |**VDGR**|TJ|= 25°C to 150°C; RGS= 1 MΩ||500|V| |**VGS**|Continuous|||±20|V| |**VGSM**|Transient|||±30|V| |**ID25**|TC|= 25°C|24N50Q|24|A| ||||26N50Q|26|A| |**IDM**|TC|= 25°C, Note 1|24N50Q|96|A| ||||26N50Q|104|A| |**IAR**|TC|= 25°C|24N50Q|24|A| ||||26N50Q|26|A| |**EAR**<br>**EAS**|TC <br>TC|= 25°C<br> = 25°C||30<br>1.5|mJ<br>J| |**dv/dt**|IS|≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||5 V/ns|5 V/ns| |**PD**|TJ <br>TC|≤150°C, RG= 2Ω<br> = 25°C||300|W| |**TJ**||-55 ... +150|-55 ... +150|-55 ... +150|°C| |**TJM**||150|150|150|°C| |**Tstg**||-55 ... +150|-55 ... +150|-55 ... +150|°C| |**TL**|1.6 mm (0.063 in) from case for 10 s|1.6 mm (0.063 in) from case for 10 s||300|°C| |**Md**|Mounting torque 1.13/10||Mounting torque 1.13/10|Mounting torque 1.13/10|Nm/lb.in.| |**Weight**|TO-247|||6|g| ||TO-268|||4|g| ## **Symbol Test Conditions Characteristic Values** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**| |---|---|---| |**VDSS**<br>VGS = 0 V, ID= 250µA<br>500|~~=~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4 mA<br>2.5|~~=~~<br>||4.5<br>V| |**IGSS**<br>VGS =±20 VDC, VDS= 0||±100<br>nA| |**IDSS**<br>VDS = VDSS<br>TJ= 25°C<br>VGS = 0 V<br>TJ= 125°C|~~-~~|25<br>µA<br>1<br>mA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>24N50Q<br>Note 2<br>26N50Q|~~-~~|0.23<br>Ω<br>0.20<br>Ω| ## **TO-247 AD (IXFH)** **==> picture [160 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> (TAB)<br>TO-268 (D3) (IXFT) Case Style<br>G (TAB)<br>S<br>G = Gate, D = Drain,<br>S = Source, TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** IXYS advanced low Qg process International standard packages Low R DS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification ## **Advantages** Easy to mount Space savings High power density DS98512G(03/03) © 2003 IXYS All rights reserved **IXFH 24N50Q IXFT 24N50Q IXFH 26N50Q IXFT 26N50Q** **==> picture [512 x 463] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Characteristic Values<br>(TJ = 25°C, unless otherwise specified) TO-247 AD Outline<br>min. typ. max.<br>gfs V DS = 10 V; ID = 0.5 • ID25, Note 2 14 24 S<br>Ciss 3900 pF 1 2 3 Terminals:<br>Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 500 pF 1 - Gate2 - Drain<br>Crss 130 pF 3 - SourceTab - Drain<br>t 28 ns<br>d(on)<br>tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 ns<br>td(off) RG = 2 Ω (External), 55 ns<br>Dim. Millimeter Inches<br>tf 16 ns Min. Max. Min. Max.<br>A 4.7 5.3 .185 .209<br>Qg(on) 95 nC A1 2.2 2.54 .087 .102<br>Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC Ab 2 1.02.2 1.42.6 .040.059 .055.098<br>Qgd 40 nC b1 1.65 2.13 .065 .084<br>b2 2.87 3.12 .113 .123<br>RthJC 0.42 K/W CD 20.80.4 21.46.8 .819.016 .845.031<br>RthCK (TO-247) 0.25 K/W E 15.75 16.26 .610 .640<br>e 5.20 5.72 0.205 0.225<br>L 19.81 20.32 .780 .800<br>L1 4.50 .177<br>Source-Drain Diode Characteristic Values ∅P 3.55 3.65 .140 .144<br>(TJ = 25°C, unless otherwise specified) QR 4.325.89 5.496.40 0.232.170 0.252.216<br>Symbol Test Conditions min. typ. max. S 6.15 BSC 242 BSC<br>IS VGS = 0 V 24N50Q 24 A<br>26N50Q 26 A TO-268 Outline<br>ISM Repetitive; Note1 24N50Q 96 A<br>26N50Q 104 A<br>VSD IF = IS, VGS = 0 V, 1.3 V<br>Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %<br>trr 250 ns<br>QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 µ C<br>IRM 8 A<br>**----- End of picture text -----**<br> Note 1. Pulse width limited by TJM |Millimete<br>Min<br>M|r<br>Inches<br>x<br>Min<br>Max| |---|---| |.<br>|.<br>.<br>.| |4.9<br>5<br>2.7<br>2<br>.02<br>.|.1<br>.193<br>.201<br>.9<br>.106<br>.114<br>25<br>.001<br>.010| |1.15<br>1.<br>1.9<br>2<br>.4<br>.<br><br>|45<br>.045<br>.057<br>.1<br>.75<br>.83<br>65<br>.016<br>.026<br><br><br>| |13.80<br>14.<br>15.85<br>16.<br>13.3<br>13|00<br>.543<br>.551<br>05<br>.624<br>.632<br>.6<br>.524<br>.535| |5.45 BS<br>18.70<br>19.<br>2.40<br>2.|C .215 BSC<br>10<br>.736<br>.752<br>70<br>.094<br>.106| |1.20<br>1.<br>1.00<br>1.<br>0.25 BS<br>3.80<br>4.|40<br>.047<br>.055<br>15<br>.039<br>.045<br>C .010 BSC<br>10<br>.150<br>.161| 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % ## Min Recommended Footprint **==> picture [160 x 136] intentionally omitted <==** IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 **IXFH 24N50Q IXFT 24N50Q IXFH 26N50Q IXFT 26N50Q** **==> picture [485 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 6050 TJ = 25 [O] C 9V 8VVGS=10V 50 TJ = 125 [O] C 9V VGS=10V<br> 7V 40 8V<br> 7V<br>40 6V<br>30<br>6V<br>30<br>20<br>20 5V<br>10 5V 10<br>0 0<br>0 4 8 12 16 20 0 4 8 12 16 20<br>VDS - Volts VDS - Volts<br> Fig.1 Output Characteristics @ Tj = 25°C Fig.2 Output Characteristics @ Tj = 125°C<br>2.8 2.4<br>VGS = 10VGS = 10V= 10V VGS = 10V<br>2.4<br>2.0<br>ID = 26A<br>TJ = 125J = 125= 125 [[o]] C<br>2.0<br>1.6<br>1.6<br>TJ = 25J = 25= 25 [[o]] C 1.2 ID = 13A<br>1.2<br>0.8 0.8<br>0 10 20 30 40 50 60 25 50 75 100 125 150<br>ID - AmperesD - Amperes - Amperes TJ - Degrees C<br> Fig.3 RDS(on) vs. Drain CurrentDS(on) vs. Drain Current vs. Drain Current Fig.4 Temperature Dependence of Drain<br> to Source Resistance<br>30<br>50<br>IXF_26N50Q<br>25<br>40<br>IXF_24N50Q<br>20<br>30<br>15<br>TJ = 125 [o] C TJ = 25 [o] C<br>20<br>10<br>5 10<br>0<br>0<br>-50 -25 0 25 50 75 100 125 150<br>0 2 4 6 8<br>TC - Degrees C VGS - Volts<br> - AmperesID - AmperesID<br> - Normalized<br>DS(ON) DS(ON)<br>R<br> - Amperes<br>ID - AmperesID<br>**----- End of picture text -----**<br> **==> picture [215 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>VGS = 10VGS = 10V= 10V<br>2.4<br>TJ = 125J = 125= 125 [[o]] C<br>2.0<br>1.6<br>TJ = 25J = 25= 25 [[o]] C<br>1.2<br>0.8<br>0 10 20 30 40 50 60<br>ID - AmperesD - Amperes - Amperes<br> Fig.3 RDS(on) vs. Drain CurrentDS(on) vs. Drain Current vs. Drain Current<br> - Normalized<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage © 2003 IXYS All rights reserved **IXFH 24N50Q IXFT 24N50Q IXFH 26N50Q IXFT 26N50Q** **==> picture [485 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 12 10000<br>f = 1MHz<br>10 VDS = 250 V<br> ID = 13 A Ciss<br>8 IG = 10 mA<br>Coss<br>6 1000<br>4<br>Crss<br>2<br>0 100<br>0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40<br>Gate Charge - nC VDS - Volts<br> Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves<br>50<br>45<br>40<br>35<br>30<br>TJ = 125 [O] C<br>25<br>20<br>TJ = 25 [O] C<br>15<br>10<br>5<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> - Volts<br>GS<br>V<br>Capacitance - pF<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [49 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> VSD - Volts<br>**----- End of picture text -----**<br> Fig.9 Drain Current vs Drain to Source Voltage **==> picture [494 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.00<br>D=0.5<br>0.10 D=0.2<br>D=0.1<br>D=0.05<br>D=0.02<br>0.01 D=0.01<br>Single Pulse<br>0.00<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>Pulse Width - Seconds<br> - K/W<br>JC<br>R(th)<br>**----- End of picture text -----**<br> Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Updated at February 9, 2023
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