IXFH26N50P3

Power MOSFET, N Channel, 500 V, 26 A, 0.25 ohm, TO-247, Through Hole

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Manufacturer: IXYS SEMICONDUCTOR
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power
MSL: MSL 1 - Unlimited
SVHC: No SVHC (12-Jan-2017)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: Polar3 HiperFET
Qualification: -
Power Dissipation: 500W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-247
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 26A
Drain Source On State Resistance: 0.25ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	250
Price	3.78 €
Current stock	50+
Lead time	30 days

Datasheet

## **Polar3[TM ] HiperFET[TM] Power MOSFET** 

**IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3** 

N-Channel Enhancement Mode Avalanche Rated 

Fast Intrinsic Rectifier 

|Fast Intrinsic Rectifier|Fast Intrinsic Rectifier<br>Qa|Fast Intrinsic Rectifier<br>Qa|**TO-263 AA (IXFA)**<br>G<br>S<br>D (Tab)<br>B~~D~~|**TO-263 AA (IXFA)**<br>G<br>S<br>D (Tab)<br>B~~D~~|**TO-263 AA (IXFA)**<br>G<br>S<br>D (Tab)<br>B~~D~~|**TO-263 AA (IXFA)**<br>G<br>S<br>D (Tab)<br>B~~D~~|**TO-263 AA (IXFA)**<br>G<br>S<br>D (Tab)<br>B~~D~~|
|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oe~~||||||||
|**VDSS**|TJ = 25C to 150C||500||||V|
|**VDGR**<br>**VGSS**|TJ = 25C to 150C, RGS= 1M<br>Continuous|= 1M|500<br>30||||V<br>V|
|**VGSM**|Transient||40||||V|
|**ID25**|TC = 25C||26                    A|26                    A|26                    A|26                    A|26                    A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM||78||||A|
|**IA**|TC = 25C||13||||A|
|**EAS**<br>**dv/dt**I|TC = 25C<br>IS IDM, VDD VDSS, TJ 150°C                                      35                V/ns||300<br>150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns|mJ<br>150°C                                      35                V/ns||
|**PD**|TC = 25C||500||||W|
|**TJ**|||-55 ... +150||C|||
|**TJM**|||150||C|||
|**Tstg**|||-55 ... +150||C|||
|**TL**<br>**TSOLD**<br>**FC**<br>**Md**|Maximum Lead Temperature for Soldering<br>300<br>Plastic Body for 10s<br>260<br>Mounting Force   (TO-263)                         10..65 / 2.2..14.6<br>Mounting Torque (TO-220, TO-3P & TO-247)       1.13 / 10||||°C<br>°C<br>N/lb<br>Nm/lb.in|||
|**Weight**|**Weight**TO-263||2.5||||g|
|TO-220<br>TO-3P|TO-220<br>TO-3P||3.0<br>5.5||||g<br>g|
|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|TO-247                                                                                          6.0                         g|
|**Symbol**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|||
|(TJ= 25C Unless Otherwise Specified)|C Unless Otherwise Specified)|**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|||
|**BVDSS**|VGS = 0V, ID= 1mA|500|500<br>||||||V|
|**VGS(th)**<br>**IGSS**<br>**IDSS**<br>T|VDS = VGS, ID= 4mA<br>VGS =30V, VDS= 0V<br>VDS = VDSS, VGS= 0V<br>T|3.0<br>TJ= 125C|3.0<br>5.0    V<br>100  nA<br>25A<br>750A<br>||<br>||~~-~~|||||
|**RDS(on)**|VGS = 10V, ID= 0.5 • ID25, Note 1||250  m|250  m|250  m||250  m|



**V =   500V DSS I =   26A D25 R  250m  DS(on)** 

## **TO-220AB (IXFP)** 

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**----- Start of picture text -----**<br>
G<br>D<br>S D (Tab)<br>G<br>D<br>S<br>D (Tab)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


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TO-3P (IXFQ)<br>**----- End of picture text -----**<br>


## **TO-247 (IXFH)** 

G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- Fast Intrinsic Rectifier 

- Avalanche Rated 

- Low RDS(ON) and QG 

- Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- Laser Drivers 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100457C(5/17) 

© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                      14||23|S|
|**RGi**<br>Gate Input Resistance<br>||2.1||
|||||
|**Ciss**<br>**Coss**<br>**Crss**|<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>|2220<br>280<br>8|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS||108<br>185|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3(External)||21<br>7<br>38<br>5|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>||42<br>11<br>15|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-3P & TO-247||<br>0.50<br>0.25|0.25C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||26       A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||104       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 13A, -di/dt = 100A/μs<br>VR= 100V|<br>0.9<br>10.2|250     ns<br>nC<br>A|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>28<br>VGS = 10V<br>24            8V<br>           7V<br>20<br>6V<br>16<br>12<br>8<br>4 5V<br>0<br>0 1 2 3 4 5 6 7<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>28<br>VGS = 10V<br>          7V<br>24<br>20<br>6V<br>16<br>12<br>5V<br>8<br>4<br>4V<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 13A Value vs.<br>Drain Current<br>3.8<br>V GS = 10V<br>3.4<br>3.0 T J  = 125 [o] C<br>2.6<br>2.2<br>1.8 T J  = 25 [o] C<br>1.4<br>1.0<br>0.6<br>0 5 10 15 20 25 30 35 40 45 50 55<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br>


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50 VGS = 10V<br>           8V<br>7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 13A Value vs.<br>Junction Temperature<br>3.4<br>3.0 VGS = 10V<br>2.6<br>I D = 26A<br>2.2<br>1.8<br>I D = 13A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>28<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

## **IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3** 

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Fig. 7. Input Admittance<br>30<br>25<br>20<br>15<br>TJ = 125 [o] C<br>25 [o] C<br>- 40 [o] C<br>10<br>5<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>80<br>70<br>60<br>50<br>40<br>30<br>TJ = 125 [o] C<br>20 TJ = 25 [o] C<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>Coss<br>100<br>10<br>Crss<br>f = 1 MHz<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>45<br>TJ = - 40 [o] C<br>40<br>35<br>25 [o] C<br>30<br>25 125 [o] C<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br> VDS = 250V<br>9<br> I D = 13A<br>8  I  G  = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Output Capacitance Stored Energy** 

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14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>VDS - Volts<br> - MicroJoules<br>OSS<br>E<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3** 

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Fig. 13. Forward-Bias Safe Operating Area<br>100<br>RDS(on) Limit 25μs<br>100μs<br>10<br>1<br>TJ = 150oC<br>TC = 25 o C    1ms<br>Single Pulse<br>0.1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 14. Maximum Transient Thermal Impedance** 

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1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_26N50P3(W6) 5-19-17-B 

## **IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3** 

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**----- Start of picture text -----**<br>
  TO-247 Outline<br>TO-263 Outline E v {4 | I - B—| eea  Dim. Min. ee Millimeter ee Max. Min.Inches ee Max. A2 = DA E =], B 0P   f@ecoTaE A0K M D B M<br>A 4.06 4.83 .160 .190<br>T a e See bb2 1.140.51 1.400.99 .045.020 .055.039 T a R ee Q S D2 ae<br>|"ane | c 0.40 | 0.74 ft .016 ft .029 D r OE 4 | © D1<br>c2 1.14 1.40 .045 .055 R1 0P1 4<br>SheetTi iH u | D 8.64 | 9.65 ft .340  | .380 1 2 3 IXYS ,<br>D1 8.00 8.89 .280 .320 L1 OPTION<br>ode S H | E 9.65 | 10.41 ft .380  | .405 C ;<br>E1<br>E1 6.22 8.13 .270 .320 L<br>A ial 1 . Gate ff e 2.54 BSC tte .100 BSC ini aa<br>| o 2.3. DrainSource eeee LL1 14.612.29 eeee 15.882.79 eeee ee .090.575 ee .110.625<br>4. Drain L2 1.02 1.40 .040 .055 A1 c b2b<br>[ aeal qi se ft L3 1.27 | 1.78 | .050 | .070 Ue b4 1 - Gate<br>L4 0 0.13 0 .005 e 2,4 - Drain<br>  J  M C A M 3 - Source<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TO-220 Outline ee 41 E<br>o|  7% ]<br>—<br>        Pins:<br>|L i |s ;<br>|<br>— u 1 - Gate2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **TO-3P Outline** 

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**----- Start of picture text -----**<br>
1. Gate<br>2. Drain<br>3. Source<br>4. Drain<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Updated at April 29, 2026

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