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IXFH26N50P
Power MOSFET, N Channel, 500 V, 26 A, 0.23 ohm, TO-247, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- SVHC: No SVHC (12-Jan-2017)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: PolarHV HiPerFET
- Qualification: -
- Power Dissipation: 400W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 26A
- Drain Source On State Resistance: 0.23ohm
- Gate Source Threshold Voltage Max: 5.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.54 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM ] HiPerFET Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **IXFH 26N50P IXFV 26N50P IXFV 26N50PS** **V = 500 V DSS I = 26 A D25 R ≤ 230 m Ω DS(on) t ≤ 200 ns rr** |**Symbol**|**Test Conditions**||**Maximum Ratin**|**Maximum Ratings**|||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C||500|V|||||||| |**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ||500|V|**TO-247 (IXFH)**||||||| |**VGSS**|Continuos||±30|V|||||||| |**VGSM**|Transient||±40|V|||||||| |**ID25**|TC = 25°C||26|A|||||||| |**IDM**|TC = 25°C, pulse width limited by TJM||78|A|||||||| |||||||||D (TAB)|||| |**IAR**|TC = 25°C||26|A|||||||| |**EAR**|TC = 25°C||40|mJ|||||||| |**EAS**|TC = 25°C||1.0|J|**PLUS220 (IXFV)**||**PLUS220 (IXFV)**||||| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/|100 A/µs, VDD ≤VDSS,|10|V/ns|||||||| ||TJ ≤150°C, RG= 4Ω||||||||||| |**PD**<br>**TJ**|TC = 25°C||400<br>-55 ... +150|W<br>°C|G|D|S|D (TAB)|D (TAB)||| |**TJM**|||150|°C|||||||| |**Tstg**|||-55 ... +150|°C|**PLUS220SMD (IXFV_S)**||||||| |**TL**|1.6 mm (0.062 in.) from case for 10 s||300|°C|||||||| |**TSOLD**|Plastic body for 10 s||260|°C|||||||| |**Md**|Mounting torque|(TO-247)|1.13/10|Nm/lb.in.|||||||| |**FC**|Mounting force|(PLUS220)|11..65/2.5..15|N/lb||G|S|D (TAB)|||| |**Weight**|TO-247||6|g|||||||| ||PLUS220 & PLUS220SMD||5|g|G = Gate|G = Gate|D = Drain||||| **==> picture [137 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>S D (TAB)<br>G = Gate D = Drain<br>S = Source TAB = Drain<br>**----- End of picture text -----**<br> ## **Features** |(T= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|**Max.**| |**BVDSS**<br>VGS = 0 V, ID= 250µA<br>500|~~7~~|V| |**VGS(th)**<br>VDS = VGS, ID= 4 mA<br>3.0|~~~~~|5.5<br>V| |**IGSS**<br>VGS =±30 VDC, VDS= 0|~~~~~|±100<br>nA| |**IDSS**<br>VDS = VDSS<br>VGS= 0 V<br>TJ= 125°C|~~7~~|25<br>µA<br>250<br>µA| |**RDS(on)**<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %||230<br>mΩ| - l International standard packages l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated - l Low package inductance - easy to drive and to protect ## **Advantages** > l Easy to mount > l Space savings > l High power density DS99276E(12/05) © 2006 IXYS All rights reserved ## **IXFH 26N50P IXFV 26N50P IXFV 26N50PS** ## **Symbol** ## **Test Conditions** ## **Characteristic Values** ## **TO-247 AD (IXFH) Outline** |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|| |---|---|---| |(TJ= 25°C, unless otherwise specified)<br>**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|| |**Min.**<br>**Typ.**<br>**Max.**<br>**gfs**<br>VDS = 20 V; ID= 0.5 ID25, pulse test<br>16<br>26<br>S<br>**Ciss**<br>3600<br>pF<br>**Coss**<br>VGS = 0 V, VDS= 25 V, f = 1 MHz<br>370<br>pF<br>**Crss**<br>40<br>pF|Terminals:<br>1 - Gate<br>2 - Drain<br>3 - Source<br>1 2 3<br>A<br>rey<br>ee eee<br>+ G)<br>A os<br>no<br>oP<br>i<br>|<br>ul—|| |**td(on)**<br>20<br>ns<br>**tr**<br>VGS = 10 V, VDS= 0.5 ID25<br>25<br>ns<br>**td(off)**<br>RG<br>= 4Ω(External)<br>58<br>ns<br>**tf**<br>20<br>ns|Tab - Drain<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>L<br>b<br>L.|| |**Qg(on)**<br>60<br>nC<br>**Qgs**<br>VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25<br>20<br>nC<br>**Qgd**<br>25<br>nC|A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123|| |**RthJC**<br>0.31<br>°C/W<br>**RthCS**<br>(TO-247, PLUS220)<br>0.21<br>°C/W|C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640|| |**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|e<br>5.20<br>5.72<br>0.205<br>0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232<br>0.252|| |**Symbol**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**IS**<br>VGS= 0 V<br>26<br>A|R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15<br>BSC<br>242<br>BSC|| |**ISM**<br>Repetitive<br>104<br>A<br>**VSD**<br>IF= IS, VGS= 0 V,<br>1.5<br>V<br>Pulse test, t≤300µs, dutycycle d≤2 %<br>**trr**<br>IF= 25A, -di/dt = 100 A/µs<br>200<br>ns<br>**QRM**<br>VR= 100V, VGS= 0 V<br>0.6<br>µC<br>**IRM**<br>6<br>Α<br>~~a~~|**PLUS220 (IXFV) Outline**<br>pepe<br>SR<br>pepe<br>r]|<br>at<br>ye<br>|<br>eS|<br>||| ## **PLUS220SMD (IXFV_S) Outline** IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXFH 26N50P IXFV 26N50P IXFV 26N50PS** **==> picture [502 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>26 60<br>24 VGS = 10V 55 VGS = 10V<br> 8V 8V<br>22 7V 50<br>20<br>45<br>18 40 7V<br>16<br>35<br>14<br>30<br>12<br>6V 25<br>10<br>20<br>8 6V<br>6 15<br>4 10<br>2 5V 5 5V<br>0 0<br>0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ 125ºC** **==> picture [239 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 26<br>24 VGS = 10V<br> 7V<br>22<br>20<br>18 6V<br>16<br>14<br>12<br>10<br>8<br>6 5V<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 13A Value<br>vs. Drain Current<br>3.2<br>3 V GS = 10V<br>2.8 TJ = 125ºC<br>2.6<br>2.4<br>2.2<br>2<br>1.8<br>1.6<br>1.4<br>1.2 TJ = 25ºC<br>1<br>0.8<br>0 5 10 15 20 25 30 35 40 45 50 55 60<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature** **==> picture [240 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 3.1<br>2.8 VGS = 10V<br>2.5<br>2.2<br>1.9 I D = 26A<br>1.6 I D = 13A<br>1.3<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **IXFH 26N50P IXFV 26N50P IXFV 26N50PS** **Fig. 7. Input Admittance** **==> picture [235 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>TJ = 125ºC<br>25 25ºC<br> - 40ºC<br>20<br>15<br>10<br>5<br>0<br>3.5 4 4.5 5 5.5 6 6.5 7<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 8. Transconductance** **==> picture [237 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35 TJ = - 40 º C<br> 25ºC<br>30 125ºC<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55 60<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br> **Fig. 9. Forward Voltage Drop of Intrinsic Diode** **==> picture [238 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30 TJ = 125ºC<br>20<br>10 TJ = 25ºC<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [239 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 250V<br> I D = 13A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 65<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [497 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 100<br> f = 1 MHz<br>R DS(on) Limit<br>Ciss<br>25µs<br>1,000<br>100µs<br>10<br>Coss 1ms<br>100 10ms<br>DC<br> T J = 150ºC<br>Crss TC = 25ºC<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 26N50P IXFV 26N50P IXFV 26N50PS** **==> picture [507 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Resistance<br>1.000<br>0.100<br>0.010<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br> (th)JC<br>R<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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